98 results about "Electronic materials" patented technology

This invention discloses a cellulose-based ion-conductive gel membrane and its preparation method, belonging to the technical field of flexible wearable electronic materials and sensors. Addressing the technical pain points of existing ion gels, such as easy dehydration and failure, insufficient mechanical properties, difficulty in film formation, and inability to synergistically optimize multiple performance indicators, this invention constructs a composite gel matrix by crosslinking sodium alginate and sodium carboxymethyl cellulose with calcium ions. The crosslinking density of the system is controlled by sodium carboxymethyl cellulose, and glycerol is used as a plasticizer to construct ion transport channels. A solid gel membrane free of free water is obtained through coating, crosslinking, room temperature equilibration, and drying dehydration. The raw materials of this invention are environmentally friendly, the preparation process is simple and controllable, and the resulting gel membrane possesses high tensile strength, high transparency, excellent ion conductivity, and environmental stability. It exhibits sensitive strain response and good linearity, and can be widely used in the field of flexible strain sensing.

This invention belongs to the field of electronic materials technology, specifically relating to a sintering aid, a silicon nitride HTCC ceramic packaging electronic paste, its preparation method, and its application. The sintering aid comprises the following components by mass percentage: SiO2: 30%~60%, Al2O3: 10%~25%, Y2O3: 10%~40%, ZrO2: 0.2%~1.5%, MgO: 3%~15%, SiC: 0.3%~1.5%, and TiO2: 0.1%~1.5%. This sintering aid exhibits better corrosion resistance and mechanical properties, ensuring good bonding between the tungsten metallization layer and the silicon nitride ceramic substrate. It prevents blackening and blistering issues after nickel plating. When the electronic paste prepared using this sintering aid is applied to DIP leads, the pull-out strength reaches 55N~65N, with the fracture mode being lead breakage, meeting the requirements for package reliability and high-frequency transmission.

This invention discloses a conductive paste for metallization of electronic ceramics, belonging to the field of electronic materials technology. The conductive paste for metallization of electronic ceramics of this invention includes copper alloy powder, glass powder, and an organic carrier. By controlling the ratio of copper, aluminum, and zinc in the copper alloy, the thermal expansion coefficient of the alloy is adjusted, making it compatible with electronic ceramic substrates such as alumina ceramics and zinc oxide varistors, achieving metallization through sintering under air conditions. The addition of tin improves the solderability of the metallized layer, meeting the process requirements of electronic components. The glass powder added in this invention has a low initial melting temperature, high bonding strength with the copper alloy, and strong adhesion to the ceramic substrate; combined with a specific ratio of organic carrier, it effectively improves the conductivity of the metallized layer after sintering.

The application discloses a propargyl polysiloxane modified cyanate ester resin and a preparation method and application thereof, and comprises the following steps: S1, a propargyl compound shown in formula I and polysiloxane shown in formula II are subjected to a heating reaction in the presence of a platinum catalyst and a solvent to obtain a propargyl polysiloxane; S2, the propargyl polysiloxane is mixed with a cyanate ester monomer, heated and stirred until a transparent solution is obtained, and subjected to a heat curing treatment to obtain the propargyl polysiloxane modified cyanate ester resin. The propargyl polysiloxane modified cyanate ester resin can be cured and formed at a lower curing temperature, and the prepared modified resin has lower dielectric loss, water absorption, higher impact strength and thermal stability, and has a good application prospect in high-end electronic materials.

The present application relates to copper alloy preparation technical field, specifically to a kind of high-performance copper alloy for electronic material and preparation method thereof.The present application includes the following steps: preparation processing copper alloy material, preparation etching liquid, preparation biological base hydrophobic coating liquid and preparation high-performance copper alloy for electronic material.Cu-Al-Fe-Si alloy system is used to prepare processing copper alloy material in the present application, which not only prepares the substrate of copper alloy, but also makes the processing copper alloy material prepared in the subsequent etching by the synergistic design of material composition and organizational structure, so that the etching liquid can uniformly react on the surface of the processing copper alloy material, avoiding uneven etching caused by composition segregation, thereby improving the uniformity of coating when adhering.The surface of the copper alloy material obtained after etching finally has optimized physical roughness and chemical activity, so that the biological base coating can be firmly adhered to the surface of the copper alloy material after etching, thereby obtaining high-performance superhydrophobic coating.

The present disclosure provides an organic electronic material containing a nitrogen heterocycle and a preparation method and use thereof, and relates to the technical field of organic electroluminescence. Nitrogen-containing heterocycles such as pyridine, triazine or pyrimidine are introduced into a main structure of phenanthrene, such that the electronegativity of the material is enhanced, and the electron transport performance and the thermal stability of a compound are improved. The organic electron transport material provided by the present disclosure has a relatively good thermal stability, a high luminous efficiency and a high luminous purity. An organic light-emitting device prepared from the organic electronic material has effects of reducing a driving voltage, improving a luminous efficiency, enabling color purity to be excellent and prolonging a service life.

The application discloses a kind of high-performance tin copper composite conductive paste and preparation method thereof, belong to electronic material technical field.The conductive paste is by tin copper composite powder 60-85%, tin alloy powder 3-12%, organic carrier 10-25%, functional additive 1-5% by mass percentage;Wherein the tin copper composite powder is the surface chemical tin copper powder of three-stage particle size gradient compounding, the tin alloy powder is the gradient melting point alloy powder that Sn58Bi, Sn3.5Ag, Sn0.7Cu are proportionally compounded.The application is synergistically designed by multistage particle size powder and gradient melting alloy, and dense metallurgical bonding conductive network can be formed at low temperature, and the core pain points of existing copper-based conductive paste, such as easy oxidation, high sintering temperature, insufficient conductivity, poor printing stability, are solved.The prepared paste has high conductivity, excellent oxidation resistance, low sintering temperature, good printing suitability and strong adhesion, and can be widely applied in integrated circuit packaging, flexible electronics, solar cells and other fields.

The present invention discloses a low dielectric constant multifunctional electronic moisture-proof coating composition, and relates to the technical field of electronic materials and protective coatings, the composition comprises: a component A: 15-35% of a reaction type fluorine-silicon hybrid oligomer; the component B comprises 2%-8% of surface modified nanosheet barrier filler; the component C comprises 50%-75% of a green cosolvent system; the component D comprises 0.5%-3% of a multifunctional epoxy silane coupling agent; and the component E comprises 1%-5% of a photo-thermal dual-curing initiation system. The problems that in the prior art, the VOC emission of a fluorine-containing solvent is high, the compactness is insufficient due to filler sedimentation, and the water vapor permeability is high in a high-damp-heat environment are solved, through the quaternary synergistic effect, the low dielectric constant, high hydrophobicity, excellent moisture resistance and high adhesive force to various base materials are achieved, and the water-based paint is suitable for protection of high-frequency electronic devices.

This invention belongs to the field of electronic materials technology, specifically relating to a cofferdam filler adhesive and its preparation method. It includes two components, A and B: Component A is a thixotropic cofferdam adhesive, comprising epoxy resin, a latent curing agent, a composite thixotropic agent, a composite inorganic filler, an interface compatibilizer, a coupling agent, and a dispersant; Component B is a flowable filler adhesive, comprising epoxy resin, an anhydride curing agent, a curing accelerator, an inorganic filler, a coupling agent, a wetting and dispersing agent, a stress absorber, and a surface tension modifier. The prepared cofferdam adhesive exhibits high viscosity, high thixotropy, high Tg, and low shrinkage, while the filler adhesive has low viscosity, low thixotropy, good flowability, low shrinkage, and high Tg. The two products have similar coefficients of thermal expansion and good compatibility.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

The utility model discloses a kind of electronic material development's storage bin, it is related to electronic material development technical field, including support frame, storage bin, inlet, discharge pipe, stirring mechanism and feeding mechanism, support frame is fixedly connected with storage bin, inlet is located on the upper end of storage bin, discharge pipe is connected in lower end, stirring mechanism is located inside storage bin, feeding mechanism is located in discharge pipe, the utility model is by being provided with stirring mechanism, using driving gear and driven gear meshing transmission, drive first, second stirring piece synchronous rotation, the problem of caking caused by moisture absorption and gravity compaction in the storage process of material is solved, effectively maintain material fluidity;By setting up feeding mechanism, using driving bevel gear and driven bevel gear perpendicular meshing transmission, drive double feeding roller synchronous operation, extruding push and secondary dispersion to material in discharging process, the problem of traditional discharging mode easy to block, discharging uneven.

This invention relates to the field of electronic materials technology, specifically disclosing a titanium nitride ceramic electronic paste, its preparation method, and a ceramic electrode. The titanium nitride ceramic electronic paste is prepared from the following components by mass percentage: 50%–80% titanium nitride powder, 10%–50% organic components, 0.5%–5% solid binder phase, and 0–5% additives. This invention uses titanium nitride powder as the functional phase. The physicochemical properties of titanium nitride are similar to those of the ceramic substrate. It is bonded to the ceramic substrate via high-temperature sintering, resulting in sintering shrinkage behavior that is more closely similar to that of the ceramic substrate. This reduces the difficulty of sintering and matching with the ceramic substrate, effectively reducing stress and defects during co-firing, and improving bonding strength and process stability. The paste provided by this invention also has comprehensive advantages such as low cost, excellent dispersibility, good stability, high temperature resistance, and corrosion resistance, and has broad application prospects in the high-end electronics field.

The application relates to the technical field of semiconductor packaging and electronic materials, and provides a high-heat-dissipation packaging substrate and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a first copper layer on one side of an aluminum nitride ceramic substrate layer; providing a temporary carrier with a replication surface, forming a second copper layer on the replication surface; forming a diamond-copper composite material layer on the other side of the second copper layer; removing the temporary carrier to form a bonding surface of the second copper layer; and performing copper-copper bonding with the first copper layer to obtain the high-heat-dissipation packaging substrate. The application forms a continuous copper bonding surface of the second copper layer through the replication surface of the temporary carrier, and uses the bonding surface to perform copper-copper bonding with the first copper layer on the aluminum nitride ceramic substrate layer, thereby avoiding the influence of the rough surface of the diamond-copper composite material, exposed diamond particles or damage caused by post-processing on the bonding interface, and being beneficial to forming a metal connection interface with low thermal resistance and high reliability, so that the heat dissipation performance and service stability of the packaging substrate are improved.

This invention belongs to the field of electronic materials technology and discloses a flake-shaped silver powder, its preparation method, and its application. The preparation method of the flake-shaped silver powder of this invention includes the following steps: S1, adding an alkaline aqueous solution to a silver salt aqueous solution, mixing and reacting at a first temperature, then raising the temperature to a second temperature, and adding a reducing agent to carry out a reduction reaction to obtain a silver powder precursor; S2, mixing the silver powder precursor with an anionic surfactant, ball milling to obtain a flake-shaped silver powder intermediate; S3, mixing and modifying the flake-shaped silver powder intermediate with a nonionic surface modifier, then aging, drying, and heat treatment to obtain the flake-shaped silver powder. The preparation method of the flake-shaped silver powder of this invention achieves precise control of the microstructure and surface state of the flake-shaped silver powder, and the final product has lower resistivity, a faster resistance decrease rate, and better stability in environmental testing, meeting the requirements for use in high-end electronic pastes.

This invention relates to a quantum dot light-emitting diode (LED) based on functional layer interface photocrosslinking modification and its fabrication method, belonging to the field of optoelectronic materials and devices technology. The diode comprises sequentially stacked ITO glass substrate, hole injection layer, organic hole transport layer, quantum dot light-emitting layer, electron transport layer, and cathode. Its core technology lies in introducing an interface modification layer at at least one functional layer interface of the device, formed by photoinduced crosslinking of 4-(3-trifluoromethyl-3H-diazacyclopropene-3-yl)benzoic acid. Optionally, this modification layer further comprises a pentaerythritol tetra(3-mercaptopropionate) post-treatment layer. The interface modification can be located between ITO and the hole transport layer, between the quantum dot layer and the electron transport layer, or between the electron transport layer and the cathode. The fabrication method of this invention is simple, has good compatibility with solution processing technology, and can effectively suppress interfacial ion migration, passivate surface defects, and improve device stability.

The application provides a biomass porous carbon-based sodium-selenium battery positive electrode material preparation method and application, and belongs to the technical field of new energy electronic materials. The application solves the problem of weak interaction between active selenium and carbon host in a traditional sodium-selenium battery, and the problem of rapid capacity attenuation caused by volume expansion of selenium and "flying shuttle effect" of polyselenides in a cycle process. The method comprises the following steps: mechanically mixing a biomass porous carbon material and selenium powder, and then sequentially performing heat treatment under inert gas protection and tube sealing heat treatment on the mixture to obtain the positive electrode material. The porous carbon material has good physical-chemical binding performance on active selenium, has the characteristics of low cost and simple and easy-to-operate preparation method, can be used for preparing a positive electrode material of a lithium-selenium battery and a sodium-selenium battery, can be used as a good conductive substrate or a skeleton material to load other active materials, and has wide application value.

This utility model relates to the technical field of vibrating hopper devices, and more particularly to a piezoelectric vibrating hopper, including a support frame and a storage hopper fixedly installed on its top. A vibrating discharge hopper and a vibrating power component are sequentially arranged at the bottom of the storage hopper. The vibrating discharge hopper consists of a horizontal section hopper one and an inclined section hopper two. By rotating hopper two to the end of hopper one, this utility model can adjust the inclination angle of hopper two and control the material discharge speed. Simultaneously, an electromagnetic plate and a negative pressure hole are arranged at the top of the inclined section hopper two, forming a combination of electromagnetic fixation of magnetic materials and negative pressure adsorption of non-magnetic materials. This allows for precise fixation of materials with different characteristics. When discharging stops, it avoids the situation where vibrating inertia-induced electronic materials easily slip down the inclined surface due to gravity, thus improving the accuracy of material discharge, ensuring the smoothness of material discharge, and adapting to the characteristics of various materials for fixation, thereby enhancing the versatility of the device.

1. Name of the design product: electronic material testing machine. 2. Use of the design product: the design product is used for testing the performance of electronic materials. 3. Design points of the design product: in shape. 4. Picture or photo that best indicates the design points: perspective view.

An organic electronics material includes a charge transport polymer which has a branched structure, includes a trivalent structural unit represented by formula (a) below, and a divalent structural unit represented by formula (b) below, has a structure represented by formula (I) and is formed through a direct bonding of at least one bonding site in the trivalent structural unit and at least one bonding site in the divalent structural unit, and has a weight average molecular weight of 2,000 to 500,000. In the formulas, Ar' represents a trivalent organic group derived from an aromatic hydrocarbon or aromatic heterocycle of 2 to 30 carbon atoms, or triarylamine, Ar2 represents a monovalent organic group derived from an aromatic hydrocarbon of 6 to 30 carbon atoms which has an electron-withdrawing group or an electron-donating group, and * represents a bonding site with another structure.

The application discloses a preparation method of high-uniformity super-dispersed nanometer hollow ball copper powder, and belongs to the technical field of nanometer material preparation. The method comprises the following steps: under the protection of inert gas, uniformly nanometer liquid drops are formed through microwave heating and ultrasonic atomization of a copper salt solution, and high-temperature pyrolysis is performed; during the high-temperature pyrolysis process, a mixed atmosphere of inert gas and reducing gas is adopted to ensure the reduction of copper particles and the hollow ball morphology; and the powder after pyrolysis is captured by using high-purity water containing a dispersant and a reducing agent to further prevent oxidation. The prepared hollow ball nanometer copper powder has the advantages of uniform particle size, one-time particle average particle size of 10-20 nanometers, secondary particle average particle size of 100-300 nanometers, regular morphology, uniformity, high purity and the like, and is suitable for fields of high-performance batteries, catalysts and electronic materials and the like. The method has the advantages of simple process, low cost, continuous in-out and strong expandability, and has significant industrial application value.

The present disclosure relates to thermoset compositions suitable for use in the manufacture of electronic materials, such as circuit board substrates, as well as cured compositions, prepregs, and laminates based on such thermoset compositions. One aspect of the present disclosure is a thermoset composition comprising: an aromatic epoxy resin component; a poly(styrene-co-maleic anhydride) component; an oligomer component bearing maleimides; the oligomer component bearing maleimides having a number average of at least 4 maleimides per molecule, by number average, and a softening point of no higher than 100 °C; a benzoxazine / maleimide component that is a bis(benzoxazine) subcomponent and a bis(maleimide) subcomponent and / or reaction products thereof; an aromatic primary diamine component; a microparticulate silica; an organic, halogen-free flame retardant component; an effective amount of one or more catalysts.

This utility model relates to the field of electronic material testing equipment technology, and in particular to an adjustable electronic material dielectric property testing fixture, including a support assembly, comprising a support frame with a design that is narrower at the top and wider at the bottom, the top of the outer wall of the support frame being hollow; and an adjustment assembly, comprising a fixed frame fixedly connected to the top of the inner wall of the support frame, a trapezoidal block provided on the inner side of the fixed frame, and plug-in blocks integrally formed on both sides of the outer wall of the trapezoidal block; the support assembly also includes a base integrally formed at the bottom of the support frame, the outer wall of the base having mounting holes for positioning the support assembly; it can stably support the adjustment assembly and clamping structure through the integrated support assembly; at the same time, the clamping range of the clamping plate can be controlled by the adjustment assembly, so as to clamp according to different devices to be tested, meet the clamping requirements under different conditions, and improve the practicality of the device.

The application discloses a polymer-induced organic semiconductor crystalline patterning method and application, and belongs to the technical field of organic electronic material preparation. A blending system containing an organic semiconductor acceptor material TCNQ and a polymer regulator PBTTT is dissolved in an organic solvent, and under the condition that no external electric field, magnetic field or mechanical field is added, an organic semiconductor crystal with a highly ordered parallel fibrous or linear pattern is obtained by self-assembly growth on a pretreated substrate through a solution method. The microphase separation structure formed by the polymer regulator in the solution evaporation process is used as a soft template to guide the directional nucleation and growth of a small-molecule semiconductor material, so that a highly ordered parallel fibrous or linear large-area crystal pattern is self-assembled without any external electric field, magnetic field or mechanical field.

The present invention provides a zirconium-containing nitride powder, a black UV-curable resin composition, a black resin cured product, and an electronic material that are suitable as a black pigment for a black UV-curable resin composition that exhibits excellent visible light shielding properties, exhibits black color, and has excellent UV-curing properties. [Solution] The zirconium-containing nitride powder of the present invention is characterized by containing at least one element, niobium or tantalum, in the zirconium nitride crystal. The black ultraviolet-curable resin composition of the present invention is characterized by containing the zirconium-containing nitride powder of the present invention, a photopolymerizable compound, and a photopolymerization initiator.

The utility model discloses an organic inorganic high temperature composite medium electrode connecting structure belongs to the field of electronic material and device, an organic inorganic high temperature composite medium electrode connecting structure, including shell mechanism, the inner end middle part fixed mounting of shell mechanism has limit mechanism, the inner end side fixed mounting of limit mechanism has fixed establishment, the shell mechanism includes base, the upper end fixed connection of base has the top seat, the inner end middle part of base and top seat all is provided with buffer layer, and the inner end inboard of base is provided with the installation slot, this organic inorganic high temperature composite medium electrode connecting structure, through setting up organic inorganic composite material's buffer layer, makes the whole device when being high temperature expansion can pass through the buffering of buffer layer, reduces the damage, prolongs the service life of device, through setting up the clamping groove and limiting the electrode, makes the electrode not easy to shift and cause the device function loss when using, improved the stability when using the device.

This invention relates to the field of electronic materials technology, specifically disclosing a titanium diboride ceramic electrode slurry, its preparation method, and a ceramic electrode. The titanium diboride ceramic electrode slurry is characterized by being prepared from the following components by mass percentage: 40%–89% titanium diboride powder, 10%–50% organic system, 1%–5% solid binder phase, and 0–5% additives. This invention uses titanium diboride powder as the functional phase. The physicochemical properties of titanium diboride are similar to those of the ceramic substrate. By bonding it to the ceramic substrate through high-temperature sintering, the sintering shrinkage behavior is more compatible, effectively reducing stress and defects during co-firing, and improving bonding strength and process stability.

The application belongs to the technical field of organic afterglow crystal materials, and particularly relates to a host-guest type organic long afterglow crystal material and a preparation method and application thereof. The host-guest type organic long afterglow crystal material provided by the application ingeniously selects electron-rich diphenylamine material which is easy to crystallize and cheap and easy to obtain as a host material, and simultaneously introduces an electron-rich aniline derivative of the same type which is similar in structure and cheap and easy to obtain as a guest, thereby constructing a series of crystal materials with regular structures, and obtaining a series of new long afterglow light-emitting materials with adjustable colors (from yellow to green). The afterglow time of the material is more than 2s, the material has good afterglow light-emitting performance, and has good environmental stability to water and oxygen, thereby showing the application potential of the material in the fields of information encryption and anti-counterfeiting, and being capable of providing a theoretical basis and a material basis for practical applications such as data encryption and anti-counterfeiting.

This invention belongs to the field of silicon micropowder technology, and specifically discloses a submicron spherical modified silicon micropowder and its preparation method, including the following steps: (1) silicon micropowder pretreatment; (2) aminosilane gradient pH grafting; (3) plasma pretreatment and boron nitride coating; (4) post-treatment; The submicron spherical modified silicon micropowder prepared by this invention has achieved a breakthrough improvement in comprehensive performance, and can effectively reduce the internal porosity of composite materials; the thermal decomposition initiation temperature reaches above 428℃, and the mass retention rate at 800℃ exceeds 97.5%, meeting the high-temperature resistance requirements of high-end electronic materials; the oil absorption value is as low as 0.30-0.32mL / g, and the viscosity of the slurry dispersed in epoxy resin is only 820-850mPa·s, which greatly improves the compatibility with organic matrix and processing fluidity.

The utility model relates to electronic material technical field discloses a kind of electronic material mixing stirring device, including mounting bracket, the upper surface of mounting bracket is fixedly installed with mixing bin, the lower end of mixing bin is penetrated to the lower end of mounting bracket, the upper surface of mixing bin is fixedly installed with upper cover, the upper surface of upper cover is fixedly installed with mounting box, the lower end of mounting box is penetrated to the lower surface of upper cover, the lower end of mounting box is open setting, auxiliary discharging mechanism is set on upper cover, auxiliary discharging mechanism includes conical plate and conveying pipeline, by the centrifugal action when the conveying of spiral conveying rod and the rotation of conical plate driven by stirring rod, through round hole or be thrown to all around by conical plate, so that electronic material can be more evenly fall into mixing bin, ensure the uniformity of electronic material distribution in mixing bin, improve subsequent mixing stirring quality, reduce the mixing stirring time of electronic material, improve the mixing efficiency of electronic material.

Provided is a manufacturing method for an electronic material manufacturing liquid capable of efficiently manufacturing an electronic material manufacturing liquid that is high quality even in the formation of ultra-fine patterns (e.g., 10 nm nodes or less), a pattern forming method and a semiconductor device manufacturing method using the manufacturing method, an electronic material manufacturing liquid that is high quality even in the formation of ultra-fine patterns, and a container, and particularly provided is a quality inspection method in the formation of ultra-fine patterns. In the manufacturing method for an electronic material manufacturing liquid, a method for reducing the amount of particulate metals in the liquid is selected based on the concentration of particulate metals containing iron atoms, the concentration of particulate metals containing copper atoms, and the concentration of particulate metals containing zinc atoms measured by SPICP-MS in the liquid, and at least one of the concentration of particulate metals containing iron atoms, the concentration of particulate metals containing copper atoms, and the concentration of particulate metals containing zinc atoms is reduced using the selected method for reducing the amount.