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1663 results about "Electronic materials" patented technology

Preparation method of grapheme and ferriferrous oxide composite nanometer material

InactiveCN103274396ASolve the lack of interface binding forceResolving Particle MorphologyMaterial nanotechnologyGrapheneMicrosphereSolvent
A preparation method of a grapheme and ferriferrous oxide composite nanometer material belongs to the technical field of functional materials. The preparation method comprises the following steps: at first, oxidized grapheme is prepared by an improved chemical method; and then oxidized grapheme and ferric ions are adopted as raw materials, and are compounded through adopting a solvothermal technology to carry out one-step in-situ reduction to obtain the grapheme and ferriferrous oxide composite nanometer material. The preparation method solves the problems in the prior art that the interface binding force of grapheme and a magnetic material is insufficient, the appearances, the sizes and the magnetism of magnetic material particles are uncontrollable, and the magnetic material particles cannot be dispersed in water; the prepared composite nanometer material shows a microspheric appearance, has a loose surface and is high in specific surface area; through the change of the ratio of grapheme to the ferric ions, final magnetic property and electrical property of the composite material can be adjusted; and the controllable growth of the grapheme and ferriferrous oxide composite material is realized. The prepared grapheme and ferriferrous oxide nanometer microsheric material with magnetic and electric properties can be used in fields such as biological medicine, energy, invisibility and electronic materials.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Method for sputtering and depositing tin indium oxide transparent electroconductive film on flexible substrate at room temperature

The invention relates to a method for preparing the transparent and conductive indium tin oxide thin film through sputtering flexible substrates at room temperature, which belongs to the technology field of electronic material; the method comprises the following steps: cleaning, charging working gas, ultraviolet irradiating, preparing a barrier layer and sputtering an indium tin oxide film; through the on-line ultraviolet irradiation, the argon oxygen ratio is (6.0 to 7.5):0.2, by adopting radio frequency sputtering or direct current sputtering, and at the room temperature, the indium tin oxide thin film can be prepared on the organic flexible substrate coated with a silicon dioxide layer in advance and taken as the diffusion barrier layer efficiently without damage. When the thickness of the indium tin oxide thin film is 700 nm, the electrical resistivity is 3.5*10-4 omega cm, the square resistance is 5 omega, the transmissibility of the visible light is 88 percent, and the film layer is even and smooth, and cannot be crimpled nor fall off. Compared with the preparation process of the traditional flexible indium tin oxide thin film, the method has the advantages that heating is not required, the process control is simple, and no damage is caused to the basal body; the method is suitable for large-area production and has good photoelectric characteristics.
Owner:ZHEJIANG UNIV

Solar cell back silver slurry and preparing device thereof

The invention provides a solar cell back silver slurry which can reduce the cost, and guarantee better conductivity of a silver layer and great adhesive force with a silicon substrate, and a preparing device thereof. The solar cell back silver slurry is composed of: 65%-75% of powdery mixed materials, 8%-10% of ethyecellulose, 8%-10% of butyl carbitol, 5%-8% of terpilenol, 2%-4% of thixotropic agents and remaining weight ratio of auxiliary agents, wherein the powdery mixed materials are the mixed materials of silver-coated copper powder and glass powder, and the weight ratio between the silver-coated copper powder and the glass powder is (7-12):1. The content of pure silver in the back silver slurry is only about 35%, which is much lower than the heavy silver content of present back silver slurry, so that the usage amount of silver powder is substantially reduced, the cost of the back silver slurry is greatly reduced, and the cost pressure caused by silver cost increase can be alleviated; in addition, greater adhesive force exists between a finally prepared silver layer and the silicon substrate, and the binding property, solderability and soldering resistance are greater. The solar cell back silver slurry and the preparing device thereof are suitable for popularization in the electronic material technical field.
Owner:LESHAN TOPRAYCELL
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