1133 results about "Permittivity" patented technology

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

A device positionable in a cavity of a bodily organ (e.g., a heart) may discriminate between fluid (e.g., blood) and non-fluid tissue (e.g., wall of heart) to provide information or a mapping indicative of a position and/or orientation of the device in the cavity. Discrimination may be based on flow, or some other characteristic, for example electrical permittivity or force. The device may selectively ablate portions of the non-fluid tissue based on the information or mapping. The device may detect characteristics (e.g., electrical potentials) indicative of whether ablation was successful. The device may include a plurality of transducers, intravascularly guided in an unexpanded configuration and positioned proximate the non-fluid tissue in an expanded configuration. Expansion mechanism may include helical member(s) or inflatable member(s).

This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function.

In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen,

• • the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9,
  • in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X₁ is 1.1<X₁<1.8, and
  • in the second metal nitride layer 8, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X₂ is 1.8≦X₂.

An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

An electrical-energy-storage unit (EESU) has as a basis material a high-permittivity composition-modified barium titanate ceramic powder. This powder is double coated with the first coating being aluminum oxide and the second coating calcium magnesium aluminosilicate glass. The components of the EESU are manufactured with the use of classical ceramic fabrication techniques which include screen printing alternating multilayers of nickel electrodes and high-permittivitiy composition-modified barium titanate powder, sintering to a closed-pore porous body, followed by hot-isostatic pressing to a void-free body. The components are configured into a multilayer array with the use of a solder-bump technique as the enabling technology so as to provide a parallel configuration of components that has the capability to store electrical energy in the range of 52 kW·h. The total weight of an EESU with this range of electrical energy storage is about 336 pounds.

A diode 100 is formed on a silicon-on-insulator substrate that includes a silicon layer overlying an insulator layer 142. An active region is formed in the silicon layer and includes a p-doped region 108 and an n-doped region 106 separated by a body region 110. A high permittivity gate dielectric 114 overlies the body region 110 and a gate electrode 112 overlies the gate dielectric 114. As an example, the diode can be used for ESD protection.

A high permittivity tunneling dielectric is used in a flash memory cell to provide greater tunneling current into the floating gate with smaller gate voltages. The flash memory cell has a substrate with source/drain regions. The high-k tunneling dielectric is formed above the substrate. The high-k tunneling dielectric can be deposited using evaporation techniques or atomic layer deposition techniques. The floating gate is formed on top of the high-k dielectric layer with an oxide gate insulator on top of that. A polysilicon control gate is formed on the top gate insulator.

An alkali metal, solid cathode, nonaqueous electrochemical cell capable of delivering high current pulses, rapidly recovering its open circuit voltage and having high current capacity, is described. The stated benefits are realized by the addition of at least one nitrate additive to an electrolyte comprising an alkali metal salt dissolved in a mixture of a low viscosity solvent and a high permittivity solvent. A preferred solvent mixture includes propylene carbonate, dimethoxyethane and an alkali metal nitrate, alkaline earth metal nitrate and/or an organic alkyl nitrate additive.

An alkali metal, solid cathode, nonaqueous electrochemical cell capable of delivering high current pulses, rapidly recovering its open circuit voltage and having high current capacity, is described. The stated benefits are realized by the addition of at least one phosphonate additive to an electrolyte comprising an alkali metal salt dissolved in a mixture of a low viscosity solvent and a high permittivity solvent. A preferred solvent mixture includes propylene carbonate, dimethoxyethane and an alkyl phosphonate additive.

High-temperature, multiple-layer polymer (MLP) capacitors with a stacked electrode arrangement are disclosed. The capacitor electrodes are separated by a polymer dielectric that is stable at high temperatures. In some embodiments, the polymer dielectric also has a high permittivity and is filled with high-permittivity nanoparticles, which enables the capacitor to achieve a very high capacitance density.

An electrical-energy-storage unit (EESU) has as a basis material a high-permittivity composition-modified barium titanate ceramic powder. This powder is single coated with aluminum oxide and then immersed in a matrix of poly(ethylene terephthalate) (PET) plastic for use in screen-printing systems. The ink that is used to process the powders via screen-printing is based on a nitrocellulose resin that provide a binder burnout, sintering, and hot isostatic pressing temperatures that are allowed by the PET plastic. These lower temperatures that are in the range of 40° C. to 150° C. also allows aluminum powder to be used for the electrode material. The components of the EESU are manufactured with the use of conventional ceramic and plastic fabrication techniques which include screen printing alternating multilayers of aluminum electrodes and high-permittivity composition-modified barium titanate powder, sintering to a closed-pore porous body, followed by hot-isostatic pressing to a void-free body. The 31,351 components are configured into a multilayer array with the use of a solder-bump technique as the enabling technology so as to provide a parallel configuration of components that has the capability to store at least 52.22 kW·h of electrical energy. The total weight of an EESU with this amount of electrical energy storage is 281.56 pounds including the box, connectors, and associated hardware.