982 results about "Dielectric body" patented technology

Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.

The present disclosure pertains to a method for plasma etching a semiconductor patterning stack. The patterning stack includes at least one layer comprising either a dielectric-comprising antireflective material or an oxygen-comprising material. In many instances the dielectric-comprising antireflective material will be an oxygen-comprising material, but it need not be limited to such materials. In one preferred embodiment of the method, the chemistry enables the plasma etching of both a layer of the dielectric-comprising antireflective material or oxygen-comprising material and an adjacent or underlying layer of material. In another preferred embodiment of the method, the layer of dielectric-comprising antireflective material or oxygen-comprising material is etched using one chemistry, while the adjacent or underlying layer is etched using another chemistry, but in the same process chamber. Of particular interest is silicon oxynitride, an oxygen-comprising material which functions as an antireflective material. A preferred embodiment of the method provides for the use of a source of carbon and an appropriate halogen-comprising plasma, to achieve selective etch of one oxygen-containing material compared with another material which contains a more limited amount of oxygen.

A multi-band helical antenna of the present invention includes a dielectric body including a plurality of dielectric sheets stacked in a predetermined order and a first and a second metallic pattern sections provided in the dielectric body. The first metallic pattern includes a plurality of first partially opened metallic loop patterns and a plurality of first connection elements connecting the respective adjacent first partially opened metallic loop patterns to form a first spiral structure. The second metallic pattern section includes a plurality of second partially opened metallic loop patterns and a plurality of second connection elements connecting the respective adjacent second partially opened metallic loop patterns to form a second spiral structure. The first and the second metallic pattern sections having different entire lengths. Accordingly, the multi-band helical antenna of the present invention has a dual resonant frequency characteristic and operates in different frequency bands.

A connector assembly includes a contact module, signal contacts, and a ground contact. The contact module includes a dielectric body with mating and mounting edges and corresponding opposite back edges. The signal contacts are held within the contact module. The signal contacts include mating and mounting ends that protrude from the mating and mounting edges of the contact module, respectively. The signal contacts are arranged in a differential pair to convey differential signals. The ground contact is coupled to the contact module and includes mating and mounting ends that protrude from the mating and mounting edges of the contact module, respectively. The ground contact runs alongside the back edges of the contact module from the mounting edge to the mating edge.

An apparatus for filtering electromagnetic waves, the apparatus comprising a substrate having a surface relief structure containing at least one dielectric body with physical dimensions smaller than the wavelength of the filtered electromagnetic waves, such structures repeated in a two dimensional array covering at least a portion of the surface of the first substrate. Also disclosed is a material sensor utilizing this apparatus.

A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas.

In a dielectric resonator, a superconductor is formed on two neighboring surfaces of a cubic dielectric body, and the superconductors formed on each two neighboring surfaces are connected by a silver electrode formed in the vicinity of the edge where the neighboring two surfaces join.

A method for making coaxial cable connector components for assembly into either first or second different connector configurations may include forming center contacts for the first connector configuration and forming common connector components for either the first or second connector configuration. The common connector components may include common connector housings; common back nuts, each for clamping a coaxial cable outer conductor in cooperation with a respective common connector housing; and common forward dielectric bodies, each having a passageway therethrough. The common forward dielectric body is for supporting a respective center contact for the first connector configuration, and for alternatively supporting a respective forward portion of a coaxial cable inner conductor for the second configuration. The common forward dielectric bodies may provide impedance matching with a coaxial cable for both the first and second connector configurations.

The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches. The body can be made as an isolated nano-plate or set nano-wire MOSFET's on the STI wall to form VSTB SOI devices.

Disclosed is a detection device for detecting a strength and a direction of an external force applied to a reference point, the detection device including: a first substrate having a plurality of first capacitor electrodes arranged around the reference point; a second substrate arranged to face the first substrate by interposing the first capacitor electrodes; a dielectric body arranged between the first and second substrates and made of an elastic body or fluid; a second capacitor electrode arranged to face the first capacitor electrodes by interposing the dielectric body between the first and second substrates; and a third substrate having an elastic projection which has a gravity center in a location overlapping with the reference point and is elastically deformed by the external force while a tip thereof abuts on the second substrate.

A plasma processing apparatus performs a plasma processing on a substrate to be processed by generating plasma between a first electrode and a second electrode disposed to face each other in a processing chamber by applying a radio frequency power to the first electrode from a radio frequency power supply connected to the first electrode. The plasma processing apparatus includes a dielectric body disposed near the first electrode and a conductor provided in the dielectric body. Further, a radio frequency leakage line is connected to the conductor, and the radio frequency power applied to the first electrode leaks through the radio frequency leakage line to an earth ground. In addition, an impedance adjusting circuit is provided on the radio frequency leakage line and controls an amount of the radio frequency power flowing through the radio frequency leakage line by adjusting an impedance.

An electrosurgical instrument for delivering radiofrequency (RF) electromagnetic (EM) energy and microwave frequency EM energy from a coaxial feed cable through an instrument tip into tissue. The instrument tip comprises a dielectric body separating first and second conductive elements, which act as active and return electrodes to convey the RF EM radiation by conduction, and as an antenna to radiate the microwave EM radiation. The instrument also has a fluid feed incorporated into its tip, e.g. in an additional dielectric element mounted on the underside of the tip, for delivering fluid. The delivered fluid may be a gas plasma to assist treatment or a liquid to plump up a tissue region before treatment. The instrument may fit in an endoscope.