1112 results about "High capacitance" patented technology

The invention provides a thermal runaway prevention and heat dissipation optimization method and system based on a capacitor module, and relates to the technical field of capacitor module thermal management, and the method comprises the steps: extracting the multi-source operation data features of a single capacitor through an improved layered visual attention network, carrying out the data complementation through combining a bidirectional probability diffusion model, and obtaining a multi-source operation data feature of the single capacitor; and discovering a causal relationship between network identification data by using a causal structure, generating a performance analysis report, constructing a spatio-temporal dynamic graph neural network to predict temperature field distribution, performing fault diagnosis and uncertainty quantification in combination with a multi-task learning framework, further constructing a layered early warning mechanism, and performing early warning based on a layered reinforcement learning framework. And a dynamic prediction map and a performance analysis report are combined, a heat dissipation strategy is optimized, cooperative control of the heat dissipation units is realized, an optimal heat dissipation scheme is finally obtained, thermal runaway is effectively prevented, and the safety and reliability of the capacitor module are improved.

The present application discloses an anti-crosstalk sensing circuit of a capacitive pressure sensing array and a sensing method thereof, which relates to the field of capacitive pressure sensing technology. The circuit alternately inputs a positive excitation voltage and a negative excitation voltage at the driving end of each row of pressure sensing capacitors through a row selection state, and the detection end of each column of pressure sensing capacitors is respectively connected to the inverting input end and the reference voltage of the corresponding operational amplifier according to the column selection state, and obtains a first detection voltage and a second detection voltage corresponding to the positive excitation voltage and the negative excitation voltage output by the output end of the operational amplifier, respectively, and calculates the capacitance value of the pressure sensing capacitor of the target row based on the amplitude of the positive excitation voltage and the negative excitation voltage, the first detection voltage and the second detection voltage, and the capacitance value of the reference capacitor. The present application can prevent the crosstalk phenomenon between the same row or the same column of the capacitive pressure sensing array, and significantly improve the detection accuracy of the sensing circuit of the capacitive pressure sensor array for the sensing capacitor.

The invention provides a thin-film capacitor and a preparation method thereof, and relates to the technical field of capacitors, in the invention, when a capacitor core is subjected to heat setting, inert gas is used as heat conduction gas, and the inert gas is used for filling a space between film layers of the thin-film capacitor, so that water vapor between the film layers of the thin-film capacitor can be removed; the inert gas is relatively stable and is not easy to ionize under the action of electric stress and thermal stress, so that the loss of the thin-film capacitor can be reduced. Besides, in the final stage of heat setting heating, multiple times of cooling-heating treatment are carried out in a certain temperature range, so that the metalized film in the capacitor core repeatedly expands with heat and contracts with cold, water vapor in the metalized film material can be removed, and the heat-insulating performance of the capacitor core is improved. Therefore, the loss of the thin-film capacitor is further reduced. In conclusion, the thin-film capacitor manufactured by the method is low in loss, and the service life of the capacitor is prolonged.

The invention relates to the technical field of reactive power compensation, and discloses a switching control method and device based on reactive power compensation, and the method comprises the steps: obtaining the capacitance data and switching data of each capacitor branch; calculating power data corresponding to the power system based on a power algorithm; when it is detected that the power system meets the input control condition, calculating a capacity difference value corresponding to each capacitor branch according to the capacitance data and the power data of each capacitor branch; based on a switching strategy, according to the capacity difference value and the switching data, a first target capacitor branch meeting a capacitor switching condition is switched; and when it is detected that the power system meets the removal control condition, based on the switching strategy and according to the switching data, removing the second target capacitor branch meeting the capacitor removal condition. Therefore, the switching control flexibility and the switching control accuracy of the capacitor can be improved, the intelligent uniform switching of the capacitor is realized, the use safety of the capacitor is improved, and the service life of the capacitor is prolonged.

According to the MTP device and the preparation method thereof, an MOS capacitor composed of a substrate, a gate oxide layer and a floating gate in a traditional MTP device is replaced with a capacitor located on the substrate and composed of the floating gate, an insulating layer and a conductive plug, so that the potential of the floating gate is controlled through capacitive coupling between the floating gate and the conductive plug; according to the MTP device disclosed by the invention, the capacitor is completely isolated from the substrate, so that the MTP device is not influenced by the potential of the substrate during programming and erasing operation, the operation range of the MTP device is further effectively expanded, namely the programming efficiency and the erasing efficiency of the MTP device are improved, and the reliability of the MTP device is improved. And meanwhile, higher capacitance coupling efficiency is realized in a smaller area, and the reduction of the chip area is facilitated.

The invention relates to the technical field of polypropylene capacitance films and preparation methods thereof, in particular to a high-temperature-resistant polypropylene capacitance film and a preparation method thereof.The preparation method comprises the steps that a base film sheet comprising a first edge layer, a second edge layer and a heat-resistant layer is prepared through a three-layer co-extrusion extruder, and the heat-resistant layer is located between the first edge layer and the second edge layer; stretching the base film sheet to form a capacitance film base film; and plating a metal film on the surface of the capacitance film base film to obtain the capacitance film. According to the high-temperature-resistant polypropylene capacitor film prepared by the method, the heat-resistant layer can fundamentally improve the high-temperature-resistant performance of the base film of the capacitor film, so that the overall high-temperature-resistant performance of the capacitor film is improved, and the production is simple. Besides, metal ions and ash content are not introduced, the breakdown voltage of the capacitor film product is not reduced, the first edge layer and the second edge layer do not influence the processing performance of the high-temperature-resistant polypropylene capacitor film and the control of the surface roughness, and the subsequent process is not influenced.

Techniques are provided for hybrid bonding metallic bonding pads embedded in high-K dielectric material to form a high capacitance device. For example, a device comprises a first semiconductor structure bonded to a second semiconductor structure, and a plurality of metal pads at an interface portion between the first semiconductor structure and the second semiconductor structure. The plurality of metal pads are disposed in a high-K dielectric layer. The plurality of metal pads and the high-K dielectric layer comprise at least one capacitor.

The present invention generally relates to a method for synthesizing NiO / ZnO nanoparticles using solution combustion synthesis. The method comprising: dissolving 10 grams of Zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and 10 grams of Nickel(II) nitrate hexahydrate (Ni(NO3)2·6H2O) in 30 ml of double-distilled water to obtain a solution; adding at least one fuel selected from a group consisting of glucose, urea, and combinations thereof to the solution; stirring the solution for one hour to achieve homogeneity and transferring the homogeneous solution into a Pyrex dish; placing the dish inside a preheated muffle furnace at a temperature range of 440° C. to 460° C. and allowing the solution to boil, froth, and undergo exothermic combustion thereby retrieving the resulting fine nanoparticle powder upon completion of the reaction within 20 minutes; and cooling the synthesized powder to room temperature and grinding the powder to achieve a fine, uniform consistency, thereby forming NiO / ZnO nanoparticles.

The invention provides an amidoxime functionalized MXene / CoZn-MOF heterostructure flowing electrode, a preparation method thereof and application of the amidoxime functionalized MXene / CoZn-MOF heterostructure flowing electrode to efficient adsorption of uranium in wastewater, and belongs to the technical field of sewage treatment. The flow electrode with the amidoxime functionalized MXene / CoZn-MOF heterostructure is prepared by taking MXene nanosheets, polyvinylpyrrolidone, zinc nitrate, cobalt nitrate, imidazole-2-formaldehyde and amidoxime functionalized diaminomaleonitrile as raw materials, and is further applied to a flow electrode capacitive deionization system for efficient adsorption of uranyl ions. The flow electrode prepared by the invention has the advantages of multiple micropores, high specific capacitance, high conductivity, outstanding rheological property and the like, can still keep relatively high adsorption capacity under a seawater condition, can be used for treating wastewater containing hexavalent uranium, is easy to recycle and recycle, and is environment-friendly.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a triangular grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention relates to the technical field of capacitor life detection. The capacitor service life detection method comprises the steps of obtaining electrical performance response information of a capacitor under a multi-excitation condition, constructing a dynamic response behavior path of the capacitor in a state space based on the electrical performance response information, obtaining an evolution behavior sequence, and calculating the service life of the capacitor according to the evolution behavior sequence. And matching the evolution behavior sequence with the aging behavior path in the aging trajectory library, identifying a corresponding degradation trend type, obtaining current detection condition information, inputting the degradation trend type into a life evaluation model, and performing analysis in combination with the current detection condition information to obtain a life evaluation result. The method has the effect of improving the accuracy of service life evaluation of the capacitor.

The invention provides a preparation method of a silicon capacitor and the silicon capacitor, and relates to the technical field of capacitors, and the preparation method comprises the steps: etching a plurality of groove regions on a substrate slice; a plurality of layers of capacitor units are stacked on a substrate sheet containing a groove region from bottom to top, and each capacitor unit comprises a plurality of conductive layers and dielectric layers which are alternately stacked in a cross shape from inside to outside; a first electrode and a second electrode of each capacitor unit are formed at the top of the uppermost capacitor unit, the first electrode is connected with all the odd-numbered conducting layers, and the second electrode is connected with the substrate slice and all the even-numbered conducting layers. The silicon capacitor has the beneficial effects that the effective capacitance is increased downwards by arranging the groove region, and the effective capacitance is increased upwards by forming the multiple layers of capacitor units through alternate stacking, so that the capacity density can be increased, and the silicon capacitor with small size and high capacitance density can be prepared; the device is small in occupied area, high in unit volume utilization rate, suitable for semiconductor manufacturing procedures and beneficial to device integration and miniaturization.

The capacitor comprises a capacitor core module and a capacitor shell which are arranged inside and outside, the upper end of the capacitor shell is provided with an assembly port for assembling the capacitor core module, the upper end of the capacitor core module is electrically connected with a capacitor busbar, and a plurality of metal heat dissipation plates in surface contact with the capacitor busbar are arranged at the opening position of the assembly port in parallel. And an insulating layer is arranged on the surface, in contact with the capacitor busbar surface, of the metal heat dissipation plate. According to the utility model, the connecting end of the capacitor core module and the capacitor busbar is provided with the metal heat dissipation plate for heat dissipation of the heating area of the capacitor, so that heat accumulation at a certain position of the capacitor busbar end is prevented, and the heat dissipation effect of the capacitor can be effectively improved; and meanwhile, the metal heat dissipation plate and the capacitor busbar play an insulating role on the heat dissipation structure through the insulating layer, so that the safety of the capacitor is ensured, and the overall service life is prolonged.

The invention discloses a circuit for automatically unlocking an electronic lock of a charging gun in the event of abnormal power failure, which is applied to a charging pile. The invention belongs to the technical field of electric vehicles and includes an AC / DC circuit, a DC / DC circuit, an MCU, a charging gun and an electronic lock driving circuit. The circuit solves the technical problem that a motor-type electronic lock automatically recovers to an initial state after an abnormal power failure. The invention is easy to use and can automatically unlock the electronic lock without monitoring a voltage change process through an MCU. The invention adopts a large-capacity capacitor, which has fast charging and a wide operating temperature range. The overall system design of the invention is simple, and no additional unlocking device is required. The circuit integrates power-off self-unlocking and electronic lock control, and has a low production cost. The electronic lock of the invention has high safety in self-recovery after power failure, a short capacitor charging time, a high response speed, a simple circuit structure, and is easy to produce.

The invention relates to the technical field of capacitor preparation, in particular to a preparation process optimization method and system applied to a high-frequency special capacitor, and the method comprises the steps: confirming a preparation environment, receiving a preparation instruction based on the preparation environment, and if the quality of a modified polypropylene film is not within a preset quality interval, determining that the modified polypropylene film is not in the preset quality interval; if yes, returning to the step of obtaining the modified polypropylene film according to the preparation instruction, and if the mass of the modified polypropylene film is within a preset mass interval, metallizing the modified polypropylene film by utilizing distillation equipment to obtain a metallized modified film; and completing the preparation process optimization method applied to the high-frequency special capacitor based on the sealed capacitor, the maximum power density report and the conductivity report. According to the invention, key parameters in the preparation process can be acquired and dynamically adjusted in real time, so that the accuracy of capacitor performance evaluation is improved.

The invention belongs to the technical field of flexible transparent energy storage, and discloses a preparation method and application of a flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode, according to the method, a PDMS substrate film, AgNWs and MXene are assembled layer by layer, and a Schottky barrier is formed between one-dimensional AgNWs and two-dimensional MXene, so that the MXene material is firmly attached to the surface of the AgNWs material, corrosion of the AgNWs can be prevented, and the service life of the flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode is prolonged. According to the MXene / AgNWs / PDMS composite film electrode, the cycle stability of the composite electrode is improved, a 1D / 2D heterostructure can be formed, the electrochemical storage capacity of the MXene / AgNWs / PDMS composite film electrode is effectively improved, and a flexible transparent supercapacitor with high light transmittance, high capacitance and mechanical flexibility perfectly unified is expected to be achieved.

The invention relates to the technical field of injection molding processes, in particular to an injection molding process for an ultrathin capacitor shell, which comprises the following steps: premixing ABS (Acrylonitrile Butadiene Styrene), polycarbonate and a reinforcing aid, and carrying out melt blending granulation on the obtained premix to obtain reinforced particles; the multi-cavity mold is preheated in advance; and the reinforced particles are fed into a screw extruder to be molten, then the molten reinforced particles are injected into a preheated multi-cavity mold, pressure maintaining treatment is carried out, then cooling and demolding are carried out, and the capacitor shell is obtained. The MBS and the modified glass fiber are added into the ABS / polycarbonate composite material to prepare the reinforced particles, so that the mechanical property of a product prepared from the reinforced particles is greatly improved, the product has good rigidity and toughness, and the tensile strength, bending strength and impact strength of the capacitor shell can be improved when the product is applied to the capacitor shell, and the service life of the capacitor shell is prolonged. Therefore, the shell of the capacitor can be made thinner on the premise of ensuring the quality, and the miniaturization of the capacitor is facilitated.

The invention discloses a nanoscale anti-sticking master batch for an MLCC base film, which is prepared from the following raw materials in parts by weight: 80 to 95 parts of unmodified PET (Polyethylene Terephthalate) resin, 2 to 10 parts of carboxyl modified PET resin, 1 to 10 parts of anti-sticking composition, 0.1 to 2 parts of dispersing agent and 0.1 to 3 parts of antioxidant. According to the anti-sticking master batch disclosed by the invention, the epoxy group grafted and modified nano silicon dioxide and the carboxyl modified PET resin are combined to act, so that an MLCC base film produced by the prepared anti-sticking master batch is high in surface flatness and good in anti-sticking performance. The carboxyl modified PET resin with the molecular weight of 9800 g / mol and the carboxyl number of 40-50 / mol is adopted, the viscosity of the obtained anti-sticking master batch is appropriate, and no adverse effect is caused to subsequent processing production. The roughness of the prepared MLCC base film can reach 15 nm or below, meanwhile, the anti-sticking performance is excellent, and the technical requirements for the high capacitance value and miniaturization of the MLCC can be met.

The invention discloses a semiconductor structure forming method and a semiconductor structure. The method comprises the steps of providing a substrate; forming a shallow trench isolation structure connected with the buried oxide layer in the top layer silicon, wherein the shallow trench isolation structure is provided with a capacitor region; forming a first interlayer dielectric layer on the substrate; at least two adjacent and mutually independent capacitor openings and a plurality of first conductive openings are formed, the projection of each capacitor opening on the surface of the shallow trench isolation structure is located in the capacitor area, and the projection of each first conductive opening on the surface of the shallow trench isolation structure is located outside the capacitor area; the capacitor opening and the first conductive opening penetrate through the first interlayer dielectric layer, the shallow trench isolation structure and the buried oxide layer; a capacitor conductive structure is formed in each capacitor opening, a first conductive structure is formed in the first conductive opening, and the capacitor conductive structures form MOM capacitors with adjacent positive and negative plates. According to the invention, high integration level is considered while large capacitance is provided.

A touch panel, display screen, and electronic device are disclosed. The touch panel includes a touch area and a wiring area. The touch area has a plurality of touch channels arranged at intervals and extending along a first direction, including adjacent first touch channels and second touch channels. Each first touch channel includes a first electrode, and each second touch channel includes a second electrode. The wiring area has a first end wiring and a second end wiring of the first electrode, and a first end wiring of the second electrode. The projection of the first end wiring of the second electrode in the first direction does not overlap with the projection of the first end wiring of the first electrode in the first direction, but overlaps with the projection of the second end wiring of the first electrode in the first direction. The projection of the second end wiring of the first electrode on the first end wiring of the second electrode overlaps with the first end wiring of the second electrode. Using this application can improve the accuracy of capacitive writing pen strokes.

The invention relates to an automobile capacitor and a manufacturing method thereof, and relates to the technical field of capacitors, and the automobile capacitor comprises a housing, capacitor bodies arranged in the housing at intervals, and a pouring sealant which is poured into the inner cavity of the housing to wrap the capacitor bodies. A first contact piece and a second contact piece which extend out of the shell are respectively arranged at two ends of the capacitor body, a heat dissipation hole is formed in the bottom of the shell, and a metal heat dissipation piece for dissipating heat of the first contact piece and the second contact piece is arranged in the heat dissipation hole; stepped grooves are formed in the metal radiating fins in the circumferential direction, and embedded convex rings matched with the stepped grooves are arranged at the radiating holes of the shell. With the adoption of the structure, heat of the capacitor body can be radiated through the metal radiating fins by arranging the metal radiating fins, so that the radiating effect of the capacitor is improved, and the capacitor is not easy to damage.

The utility model provides a DC-link film capacitor with high temperature resistance and high ripple current in the new energy field and a method, the DC-link film capacitor comprises a flame-retardant plastic shell, an insulating epoxy resin adhesive layer, a capacitor roll core and a metal connecting layer arranged at the corresponding position of the winding side wall surface of the capacitor roll core, and two tinned outgoing lines are connected to the corresponding positions of the two side wall surfaces of the metal connecting layer. By effectively improving the heat conductivity coefficient and the heat dissipation capability of the capacitor, heat in the inner core of the capacitor can be quickly and effectively dissipated, heat balance in a capacitor product is achieved, the capacitor has high temperature resistance, the charging time can be greatly shortened, and the service life of the capacitor is prolonged. The high-temperature-resistant high-ripple-current capacity requirement of capacitors in the new energy field such as the new energy field is met, the preparation process is simple, and the cost is low.

The invention provides a reactive compensation method and device. The method comprises the following steps: acquiring a voltage amplitude and a set value of a monitoring bus in a target new energy base; inputting the voltage amplitude and the set value of the monitoring bus into a target function of a preset switching scheme optimization model, and adjusting the number of input groups of a plurality of capacitors and the number of input groups of a plurality of reactors of the target new energy base in the target function until the target function meets a preset constraint condition, a minimum value of the objective function; and completing reactive compensation of the target new energy base by applying the input grouping number of each capacitor and the input grouping number of each reactor when the minimum value of the target function is obtained. According to the invention, the precision of grouping switching of the capacitor and the reactor can be improved, and the reliability of reactive compensation can be improved.

The invention discloses a composite switch for reactive compensation capacitor bank switching and a control method thereof, and relates to the technical field of capacitor switching, and the method comprises the steps: detecting the capacity and switching data of each branch in a back-to-back capacitor bank through a reactive compensation controller, and determining a group capacitor to be subjected to switching operation according to a preset switching control condition; the reactive compensation controller determines the switching time sequence of each phase of each group capacitor according to the confirmed input / output operation instruction to be executed and the reference voltage of each group capacitor; and calculating the reactive state and the switching state of the switched power system through the reactive compensation controller. Compared with a conventional switching control method, the automatic phase selection switching control method has the advantages that closing inrush current and overvoltage are lower, the accuracy of phase control switching of the capacitor bank can be improved, high-frequency inrush current and pre-breakdown arcing phenomena can be reduced, meanwhile, the probability of rebreakdown can be reduced, and the service life of the capacitor bank can be prolonged. And the performance of the composite switch switched capacitor bank is improved.

The utility model relates to the technical field of membrane capacitance deionization, in particular to a full-tab winding type membrane capacitance deionization device. The membrane core is formed by sequentially winding a diversion separation net, an anionic membrane, an anode flexible electrode, an anionic membrane, a diversion separation net, a cationic membrane, a cathode flexible electrode and a cationic membrane, a full tab is arranged on one side of each flexible electrode, a central tube with a hole is arranged in the middle of the membrane core, two ends of the membrane core are closed, current collecting plates are arranged outside the two ends of the membrane core, and the current collecting plates are arranged in the center of the membrane core. At least one end of the central tube extends out of the current collecting disc, the current collecting disc is provided with a wiring terminal, the two ends of the membrane core and the shell are sealed, and the outer circle of the shell is provided with an interface. Compared with the prior art, the whole side face of the flexible electrode is in contact with the collector plate for electric conduction through the arrangement of the full-tab structure, the electron transmission path can be effectively shortened, and the capacitive deionization efficiency is improved; and the electrodes are isolated from water in a packaging and sealing manner, so that the water safety is guaranteed.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a quadrilateral grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention relates to the technical field of capacitor film production, in particular to a capacitor film winding and unwinding tension adjusting mechanism and an adjusting method, which realize accurate control of tension in a capacitor film winding process and improve winding stability of a capacitor film. Comprising a supporting base fixedly arranged on the ground, and two sets of winding supporting plates are fixedly installed on the supporting base; the winding roller is rotationally arranged between the two sets of winding supporting plates and used for winding the capacitor film, and two quick change mechanisms are arranged on the winding roller; the two transmission wheel discs are rotationally arranged on the two winding supporting plates correspondingly and used for driving the winding roller to rotate; the two linear speed adjusting mechanisms are symmetrically arranged on the supporting seat and used for controlling the two transmission wheel discs to rotate and adjusting the rotating speeds of the transmission wheel discs; the pressing roller is rotationally arranged between the two linear speed adjusting mechanisms, and the pressing roller is arranged below the winding roller; the linear speed adjusting mechanism comprises a motor, a linear speed adjusting mechanism and a linear speed adjusting mechanism, the transmission shaft is fixedly connected with the output end of the motor.

The invention belongs to the technical field of touch control, and particularly relates to a capacitive induction touch control sensor and a preparation method thereof.The capacitive touch control sensor comprises a transparent base layer, a golden finger, a transmitting TX electrode, a receiving RX electrode and a metal wire, and the golden finger, the transmitting TX electrode, the receiving RX electrode and the metal wire are arranged on the transparent base layer; the transmitting TX electrode is electrically connected with the golden finger through a metal wire; the receiving RX electrode is electrically connected with the golden finger through a metal wire; wherein the transmitting TX electrodes and the receiving RX electrodes are mutually nested to form electrode blocks, and a plurality of electrode blocks form an integral single-layer multi-point touch capacitor unit array. According to the capacitive touch sensor, the golden fingers, the electrode blocks and the metal wires are arranged on the same layer of the surface of the transparent substrate, so that the transmitting TX electrodes and the receiving RX electrodes are mutually nested to form the electrode blocks, the information input of touch positioning is realized, the structure and manufacturing process links of the capacitive touch sensor are simplified, the cost is reduced, and the production efficiency is improved. And the sensitivity of the capacitive touch sensor is improved.

Methods and devices to mitigate the detrimental effects of highly capacitive output routes of multiple gain low noise amplifiers on the overall performance of the circuit are disclosed. The disclosed methods and devices implement the same inductive element across the output load in both the low gain and high gain operational modes. Furthermore, such devices implement switches to control the selection of different signal paths for the high gain and low gain mode. The implemented switches are also used to selectively adjust the isolation of the output stage of the LNA.

The invention discloses a tunable magnetoelectric antenna and a preparation method thereof. The tunable magnetoelectric antenna comprises a substrate, wherein a selected surface of the substrate is provided with a first region and a second region which are sequentially arranged along a first direction; the magnetoelectric antenna is arranged in the first area, and a resonant cavity is formed between the magnetoelectric antenna and the first area; and the trench capacitor is arranged in the second area, and the trench capacitor is connected with the bulk acoustic wave excitation magnetoelectric antenna in series. The tunable magnetoelectric antenna is formed by connecting the magnetoelectric antenna and the ferroelectric capacitor in series, the ferroelectric capacitor is of a groove structure, the capacitance value of the capacitor can be effectively increased, and transverse leakage of sound waves can be restrained.