604 results about "High capacitance" patented technology

The invention provides a thermal runaway prevention and heat dissipation optimization method and system based on a capacitor module, and relates to the technical field of capacitor module thermal management, and the method comprises the steps: extracting the multi-source operation data features of a single capacitor through an improved layered visual attention network, carrying out the data complementation through combining a bidirectional probability diffusion model, and obtaining a multi-source operation data feature of the single capacitor; and discovering a causal relationship between network identification data by using a causal structure, generating a performance analysis report, constructing a spatio-temporal dynamic graph neural network to predict temperature field distribution, performing fault diagnosis and uncertainty quantification in combination with a multi-task learning framework, further constructing a layered early warning mechanism, and performing early warning based on a layered reinforcement learning framework. And a dynamic prediction map and a performance analysis report are combined, a heat dissipation strategy is optimized, cooperative control of the heat dissipation units is realized, an optimal heat dissipation scheme is finally obtained, thermal runaway is effectively prevented, and the safety and reliability of the capacitor module are improved.

Techniques are provided for hybrid bonding metallic bonding pads embedded in high-K dielectric material to form a high capacitance device. For example, a device comprises a first semiconductor structure bonded to a second semiconductor structure, and a plurality of metal pads at an interface portion between the first semiconductor structure and the second semiconductor structure. The plurality of metal pads are disposed in a high-K dielectric layer. The plurality of metal pads and the high-K dielectric layer comprise at least one capacitor.

The present invention generally relates to a method for synthesizing NiO / ZnO nanoparticles using solution combustion synthesis. The method comprising: dissolving 10 grams of Zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and 10 grams of Nickel(II) nitrate hexahydrate (Ni(NO3)2·6H2O) in 30 ml of double-distilled water to obtain a solution; adding at least one fuel selected from a group consisting of glucose, urea, and combinations thereof to the solution; stirring the solution for one hour to achieve homogeneity and transferring the homogeneous solution into a Pyrex dish; placing the dish inside a preheated muffle furnace at a temperature range of 440° C. to 460° C. and allowing the solution to boil, froth, and undergo exothermic combustion thereby retrieving the resulting fine nanoparticle powder upon completion of the reaction within 20 minutes; and cooling the synthesized powder to room temperature and grinding the powder to achieve a fine, uniform consistency, thereby forming NiO / ZnO nanoparticles.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a triangular grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention relates to the technical field of capacitor life detection. The capacitor service life detection method comprises the steps of obtaining electrical performance response information of a capacitor under a multi-excitation condition, constructing a dynamic response behavior path of the capacitor in a state space based on the electrical performance response information, obtaining an evolution behavior sequence, and calculating the service life of the capacitor according to the evolution behavior sequence. And matching the evolution behavior sequence with the aging behavior path in the aging trajectory library, identifying a corresponding degradation trend type, obtaining current detection condition information, inputting the degradation trend type into a life evaluation model, and performing analysis in combination with the current detection condition information to obtain a life evaluation result. The method has the effect of improving the accuracy of service life evaluation of the capacitor.

The invention belongs to the technical field of flexible transparent energy storage, and discloses a preparation method and application of a flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode, according to the method, a PDMS substrate film, AgNWs and MXene are assembled layer by layer, and a Schottky barrier is formed between one-dimensional AgNWs and two-dimensional MXene, so that the MXene material is firmly attached to the surface of the AgNWs material, corrosion of the AgNWs can be prevented, and the service life of the flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode is prolonged. According to the MXene / AgNWs / PDMS composite film electrode, the cycle stability of the composite electrode is improved, a 1D / 2D heterostructure can be formed, the electrochemical storage capacity of the MXene / AgNWs / PDMS composite film electrode is effectively improved, and a flexible transparent supercapacitor with high light transmittance, high capacitance and mechanical flexibility perfectly unified is expected to be achieved.

The invention relates to the technical field of injection molding processes, in particular to an injection molding process for an ultrathin capacitor shell, which comprises the following steps: premixing ABS (Acrylonitrile Butadiene Styrene), polycarbonate and a reinforcing aid, and carrying out melt blending granulation on the obtained premix to obtain reinforced particles; the multi-cavity mold is preheated in advance; and the reinforced particles are fed into a screw extruder to be molten, then the molten reinforced particles are injected into a preheated multi-cavity mold, pressure maintaining treatment is carried out, then cooling and demolding are carried out, and the capacitor shell is obtained. The MBS and the modified glass fiber are added into the ABS / polycarbonate composite material to prepare the reinforced particles, so that the mechanical property of a product prepared from the reinforced particles is greatly improved, the product has good rigidity and toughness, and the tensile strength, bending strength and impact strength of the capacitor shell can be improved when the product is applied to the capacitor shell, and the service life of the capacitor shell is prolonged. Therefore, the shell of the capacitor can be made thinner on the premise of ensuring the quality, and the miniaturization of the capacitor is facilitated.

The invention discloses a semiconductor structure forming method and a semiconductor structure. The method comprises the steps of providing a substrate; forming a shallow trench isolation structure connected with the buried oxide layer in the top layer silicon, wherein the shallow trench isolation structure is provided with a capacitor region; forming a first interlayer dielectric layer on the substrate; at least two adjacent and mutually independent capacitor openings and a plurality of first conductive openings are formed, the projection of each capacitor opening on the surface of the shallow trench isolation structure is located in the capacitor area, and the projection of each first conductive opening on the surface of the shallow trench isolation structure is located outside the capacitor area; the capacitor opening and the first conductive opening penetrate through the first interlayer dielectric layer, the shallow trench isolation structure and the buried oxide layer; a capacitor conductive structure is formed in each capacitor opening, a first conductive structure is formed in the first conductive opening, and the capacitor conductive structures form MOM capacitors with adjacent positive and negative plates. According to the invention, high integration level is considered while large capacitance is provided.

A touch panel, display screen, and electronic device are disclosed. The touch panel includes a touch area and a wiring area. The touch area has a plurality of touch channels arranged at intervals and extending along a first direction, including adjacent first touch channels and second touch channels. Each first touch channel includes a first electrode, and each second touch channel includes a second electrode. The wiring area has a first end wiring and a second end wiring of the first electrode, and a first end wiring of the second electrode. The projection of the first end wiring of the second electrode in the first direction does not overlap with the projection of the first end wiring of the first electrode in the first direction, but overlaps with the projection of the second end wiring of the first electrode in the first direction. The projection of the second end wiring of the first electrode on the first end wiring of the second electrode overlaps with the first end wiring of the second electrode. Using this application can improve the accuracy of capacitive writing pen strokes.

The invention provides a reactive compensation method and device. The method comprises the following steps: acquiring a voltage amplitude and a set value of a monitoring bus in a target new energy base; inputting the voltage amplitude and the set value of the monitoring bus into a target function of a preset switching scheme optimization model, and adjusting the number of input groups of a plurality of capacitors and the number of input groups of a plurality of reactors of the target new energy base in the target function until the target function meets a preset constraint condition, a minimum value of the objective function; and completing reactive compensation of the target new energy base by applying the input grouping number of each capacitor and the input grouping number of each reactor when the minimum value of the target function is obtained. According to the invention, the precision of grouping switching of the capacitor and the reactor can be improved, and the reliability of reactive compensation can be improved.

The invention discloses a composite switch for reactive compensation capacitor bank switching and a control method thereof, and relates to the technical field of capacitor switching, and the method comprises the steps: detecting the capacity and switching data of each branch in a back-to-back capacitor bank through a reactive compensation controller, and determining a group capacitor to be subjected to switching operation according to a preset switching control condition; the reactive compensation controller determines the switching time sequence of each phase of each group capacitor according to the confirmed input / output operation instruction to be executed and the reference voltage of each group capacitor; and calculating the reactive state and the switching state of the switched power system through the reactive compensation controller. Compared with a conventional switching control method, the automatic phase selection switching control method has the advantages that closing inrush current and overvoltage are lower, the accuracy of phase control switching of the capacitor bank can be improved, high-frequency inrush current and pre-breakdown arcing phenomena can be reduced, meanwhile, the probability of rebreakdown can be reduced, and the service life of the capacitor bank can be prolonged. And the performance of the composite switch switched capacitor bank is improved.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a quadrilateral grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention discloses a capacitor implosion risk analysis method and system based on time sequence characteristics, and relates to the technical field of risk analysis, and the method comprises the steps: collecting the current, temperature and equivalent series resistance data in the operation process of a capacitor, and constructing an operation parameter time sequence data set; first-order instant change features are extracted in each time window, and second-order time sequence features are obtained based on continuous window analysis; identifying abnormal change features and counting occurrence times, duration and multi-parameter joint modes to form an enhanced implosion risk representation vector; and classifying each time window based on implosion risk characteristics, judging implosion risks to be low, medium and high levels, and generating a detailed risk early warning sequence and corresponding processing suggestions. According to the method, multi-parameter and multi-time-dimension continuous risk analysis and graded early warning can be realized, the operation safety of the capacitor is effectively improved, implosion accidents are prevented, and the overall risk management and control efficiency is improved.

The invention, which relates to the technical field of capacitor fault diagnosis, discloses a capacitor fault prediction and diagnosis system based on loss data, comprising a data acquisition module, an analysis module, a diagnosis module and a decision module. The data acquisition module is responsible for acquiring capacitance parameter data of a capacitor, collecting internal parameters of the capacitor through a capacitance sensor array, and transmitting the capacitance parameter data to the data preprocessing module; the data preprocessing module is used for further preprocessing the capacitance parameter data transmitted from the data acquisition module; according to the method, the percentage loss proportion and the residual service life RUL of the capacitor are calculated through the analysis unit based on the screened optimization characteristic data, different strategies are further executed in a graded mode, the loss trend of the capacitor is effectively calculated by analyzing the internal parameters C, ESR and tan delta of the capacitor, potential faults are recognized in advance, and the fault diagnosis accuracy is improved. Therefore, the accuracy of capacitor fault prediction is improved, and long-term stable operation of equipment is guaranteed.

The invention provides a capacitor capacitance value on-line monitoring method, device and system and an auxiliary discharge network, and the method comprises the steps: when a power converter is in an on-line operation state, collecting the voltage of a DC power supply for many times and recording a time point at a stage that a bipolar junction transistor is disconnected and a resistor is put into operation; determining the capacitance values of the first aluminum electrolytic capacitor and the second aluminum electrolytic capacitor according to the starting time point when the bipolar junction transistor is disconnected and the resistor is put into operation, the total output current of the first aluminum electrolytic capacitor and the second aluminum electrolytic capacitor, the resistance value of the resistor, the direct-current power supply voltage and the time point; the first and second capacitor branches are connected in parallel with the direct-current power supply; the first capacitor branch comprises a resistor and a first aluminum electrolytic capacitor which are connected in series; the second capacitance branch comprises a second aluminum electrolytic capacitor; the bipolar junction transistor is connected in parallel with the resistor. The capacitance value of the capacitor can be monitored on line, and the reliability of capacitor state monitoring is improved.

The application discloses a preparation method of a high-density and high-stability conductive polymer film based on electrochemical polymerization, and comprises the following steps: using an oxidant solution and a BFDO monomer solution to pretreat a formed foil to obtain a working electrode, then immersing the working electrode and a reference electrode into an electrolyte to perform electrochemical oxidation polymerization, and obtaining the high-density and high-stability conductive polymer film based on electrochemical polymerization. The pretreated formed foil containing N-type conductive polymer PBFDO is prepared by using a chemical in-situ polymerization method on the formed foil, and when the pretreated formed foil is applied in the field of capacitors, the conductivity and electron transport capacity of the capacitor can be improved, and the stability problem caused by the coupling of positive and negative charges in the traditional capacitor is greatly improved.

A capacitor device (5) includes a capacitor (30), a capacitor bus bar (29), and a heat dissipation bus bar (26). One end of a capacitor bus bar (29) is electrically connected to the capacitor, the other end is electrically connected to the electrical component, and the capacitor bus bar extends in the arrangement direction of the capacitor and the electrical component. The heat dissipation bus bar (26) is provided with an end portion on the capacitor bus bar so as not to be present in the capacitor bus bar in the extending direction of the capacitor bus bar, and dissipates heat of the capacitor. Consequently, it is possible to suppress an increase in inductance of the capacitor bus bar and to improve heat dissipation of the capacitor at the same time.

Provided is a capacitor and a composite material for a capacitor which have a high capacity, and a manufacturing method thereof. Provided is a capacitor, a composite material for a capacitor, and a manufacturing method thereof, in which the capacitor includes a pair of electrodes and an electrolyte, and at least one of the electrodes contains a metal complex or an adduct thereof and a carbon material which are represented by expressions (1) or (2).

The embodiment of the utility model relates to the technical field of capacitors, and discloses a capacitor structure and electronic equipment, and the capacitor structure comprises a fixed polar plate assembly and a movable polar plate which moves along the displacement direction. The fixed polar plate assembly comprises two first fixed polar plates and a second fixed polar plate; the first fixed polar plates and the second fixed polar plates are arranged on the same plane perpendicular to the displacement direction, and the two first fixed polar plates are symmetrically arranged on the two sides of the second fixed polar plates; the movable polar plate and the fixed polar plate assembly are oppositely arranged; the length of the first fixed polar plate in the displacement direction and the length of the second fixed polar plate in the displacement direction are both greater than the stroke amount of the movable polar plate in the displacement direction; a first gap is formed between one first fixed pole plate and the second fixed pole plate, a second gap is formed between the other first fixed pole plate and the second fixed pole plate, and the extending directions of the first gap and the second gap are different from the displacement direction. According to the embodiment, capacitance deviation caused by torsion of the movable polar plate is counteracted, the accuracy of capacitance detection is improved, and then the accuracy of position detection is improved.

The invention discloses an anodic oxidation method for improving the uniformity of a dielectric layer of a capacitor. The anodic oxidation method comprises the following steps that a tantalum block is pretreated and then placed in an electrolytic bath; adding electrolyte into the electrolytic bath, and performing oscillation circulation through an oscillator; a tantalum block is sequentially subjected to a pre-oxidation procedure, a main oxidation procedure, a stabilization procedure, heat treatment and constant-pressure treatment, the tantalum block is taken out after treatment is finished, and the tantalum block is cleaned and dried to finish anodic oxidation. The ultrasonic oscillator is additionally arranged in the electrolytic bath, so that the electrolyte concentration gradient can be eliminated, and the thickness uniformity of the dielectric layer is improved. And by adding ammonium dihydrogen phosphate, micropores are filled, the surface of the tantalum block is passivated, and the performance of a capacitor prepared from the tantalum block is improved. Through a staged dynamic oxidation method and a composite electrolyte formula, the uniformity and reliability of a tantalum oxide dielectric layer are remarkably improved, and the method is suitable for industrial production of a high-reliability tantalum capacitor.

An apparatus capable of testing a contact state and a leakage current during aging of capacitors in a large batch, comprising a direct-current power supply (6), an alternating-current power supply (7), and a capacitor array. Each capacitor (2) is connected in series to one protective element to form a two-end capacitor unit. One end of each of a plurality of capacitor units forming a column in the capacitor array is connected to a measurement connecting line (4), to form one column in the array. A plurality of capacitor units forming a row are connected to a voltage connecting line (5), to form one row in the array. The voltage connecting lines (5) are voltage lines of the direct-current power supply (6) and voltage lines of the alternating-current power supply (7). The voltage lines of the direct-current power supply (6) and the voltage lines of the alternating-current power supply (7) are respectively provided with switches. According to a method for performing testing by using the apparatus, the value measured on each measurement line is the total leakage current of all of the capacitors connected to the measurement line. The power supply connected to the voltage connecting line where a capacitor unit of which the leakage current needs to be tested is located is disconnected, and the total current on the measurement connecting line connected to said capacitor unit is immediately tested again, so that the screening quality of high capacitance capacitors is improved.

A method for manufacturing a multi-layer ceramic capacitor (MLCC) end electrode and printing a full-area inner electrode protective layer is disclosed. The method uses thin dielectric ceramic layer thickness and a plurality of nickel inner electrode stacks to achieve high capacitance. The method produces high-density electrode-to-ceramic ratio end edges and side edges. The method uses an ultralow-temperature electrochemical deposition coating technology to manufacture a low-stress multi-layer ceramic capacitor end electrode and an insulating protective layer, thereby improving the yield of the multi-layer ceramic capacitor and reducing manufacturing costs.

The invention belongs to the field of semiconductors, and discloses a novel ferroelectric memcapacitor based on an MFIS structure and a preparation method thereof, a substrate of the novel ferroelectric memcapacitor comprises a first doped region and a second doped region, and the doping type of the first doped region is p-type; the insulating layer, the ferroelectric layer and the top electrode layer are arranged on the substrate from bottom to top and cover the first doped region of the substrate; an uncovered area on the surface of the substrate is a second doped area, and the doping type of the second doped area is n type; the bottom electrode layer is located in the second doped region of the substrate and is far away from the first doped region; the channel is located in the second doped region of the substrate and is close to the first doped region; the invention also provides a corresponding preparation method, according to the ferroelectric memcapacitor prepared by using the method, because the semiconductor layer has a PN junction depletion region, the ferroelectric film can be fully overturned by using a band-to-band tunneling mechanism without large voltage, and meanwhile, the capacitance of the depletion region of the PN junction on one side of the semiconductor is adjusted, so that a relatively high capacitance-to-switch ratio is obtained while low power consumption is ensured.

The utility model discloses a combined capacitor with a good heat dissipation effect, and relates to the technical field of capacitors, the combined capacitor comprises a combined shell and a combined heat dissipation mechanism, and the inner side of the combined shell is provided with the combined heat dissipation mechanism; through the arrangement of the combined heat dissipation mechanism, multiple groups of combined capacitors are mutually connected through the array connecting disc, the convenience of capacitor installation is improved, meanwhile, the combined capacitors are protected through the combined shell, when the combined capacitors are used, heat dissipation is conducted on the capacitors through the heat dissipation fan, heat dissipation plates facilitate heat dissipation in the combined shell, and the heat dissipation efficiency is improved. The method comprises the following steps: step 1, in the operation process of a heat dissipation fan, a heat dissipation effect is ensured, heat in a combined shell is absorbed through a heat conduction top cover and a water cooling pipe, and meanwhile, each column of combined capacitors are separated to a certain extent through the water cooling pipe, so that mutual influence among the combined capacitors is reduced, and step 2, in the operation process of the heat dissipation fan, airflow passing through the water cooling pipe is slowed down through a flow slowing grid, so that the heat dissipation effect is improved. And the heat absorption effect of the water-cooled tube on the combined capacitor is improved.

The invention relates to a capacitance measurement device and a capacitance measurement method based on the capacitance measurement device. The capacitance measurement device comprises a first voltage source, a second voltage source, a first range resistor, a vector voltage acquisition module and a vector current acquisition module. The first voltage source, the capacitor to be measured and the vector current acquisition module are connected in series to form a first loop; the second voltage source, the first measuring range resistor and the vector current acquisition module are connected in series to form a second loop; the first measuring range resistor is a measuring range resistor with a variable resistance value; the vector voltage acquisition module is connected in parallel with the two ends of the capacitor to be measured. According to the embodiment of the invention, capacitance measurement can be realized, the capacitance measurement accuracy is improved, the capacitance measurement range is expanded, the capacitance measurement efficiency is improved, and the capacitance measurement operation complexity is reduced.

The present invention discloses a preparation method of a radio frequency thin film capacitor, relating to the technical field of capacitors. The method includes: preparing a layer of photoresist on a substrate, and sequentially performing exposure and development operations on the photoresist to obtain a first mask structure; sputtering a layer of gold layer on the first mask structure to obtain a bottom electrode mask structure; depositing a layer of thin film dielectric layer on the bottom electrode mask structure to obtain a dielectric layer mask structure; sputtering a layer of gold layer on the dielectric layer mask structure to obtain a top electrode mask structure; preparing a layer of photoresist on the top electrode mask structure, and sequentially performing exposure and development operations on the photoresist prepared on the top electrode mask structure to obtain a second mask structure; sequentially performing etching, scribing and photoresist removal operations on the second mask structure to obtain a radio frequency thin film capacitor. The present invention can minimize the insertion loss introduced due to the sample size and improve the operating frequency of the capacitor.

The invention relates to a glue pouring positioning tool for a capacitor, which comprises a positioning frame, more than one positioning block and at least two locking strips, and is characterized in that the positioning frame is sleeved outside a shell of the capacitor and is positioned at the upper part of the shell; the locking bar is used for fixing the positioning frame on the upper part of the shell; the two end parts of the positioning block are connected with the upper end of the positioning frame, and the middle part of the positioning block is locked with a connecting terminal of a core group of the capacitor. According to the invention, the glue filling positioning tool is applied to the preparation process of the capacitor, so that the upper cover of the capacitor can be welded after glue filling is completed, the glue filling liquid level height and the glue curing effect can be confirmed in the glue filling process of the capacitor, and the glue filling liquid level height and the glue curing effect can meet the requirements; therefore, the yield of the capacitor is improved.

The utility model relates to the field of capacitor supports, and discloses a high-voltage static var compensation capacitor support, which comprises a mounting plate, limiting plates are fixedly connected to two sides of the top end of the mounting plate, a mounting sliding groove is formed in the mounting plate, a fixed mounting frame is slidably connected to the interior of the mounting sliding groove, and the limiting plates are fixedly connected to the limiting plates. A fixing groove opening is formed in the fixed mounting frame, a plurality of supporting plates are arranged at the top end of the mounting plate, the supporting plates are connected through a plurality of connecting blocks, a limiting fixing assembly is mounted at the bottom of the mounting plate, and capacitor bodies are fixedly connected to the top ends of the supporting plates. According to the utility model, when the capacitor is damaged, the capacitor can be flexibly disassembled, so that the maintenance and the use are more convenient, and when a single capacitor is damaged, the current generated by the capacitor cannot influence the work of other capacitors, thereby improving the use safety of the capacitor.

The invention discloses a flexible capacitive pressure sensor and a preparation method, and relates to the technical field of flexible capacitive pressure sensors.The flexible capacitive pressure sensor comprises a shell, a second binding post arranged at one end of the shell, a shell cover arranged at the other end of the shell and a first binding post arranged on the shell cover, an upper packaging layer is arranged in the shell, an upper electrode layer is arranged on one side of the upper packaging layer, and a lower electrode layer is arranged on the other side of the upper packaging layer; a middle dielectric layer is arranged on one side of the upper electrode layer, a lower electrode layer is arranged on one side of the middle dielectric layer, and a lower packaging layer is arranged on one side of the lower electrode layer; conductive film structures are arranged between the lower electrode layer and the middle dielectric layer and between the upper electrode layer and the middle dielectric layer; a sealing assembly is arranged in the shell cover; an extrusion assembly is further arranged in the shell cover; by using the sealing assembly, the sealing performance between the shell and the shell cover is improved, external moisture and dust are prevented from entering the shell, the accuracy of capacitance measurement is improved, and the service life of the flexible capacitive pressure sensor is further prolonged.

The disclosure provides a semiconductor structure defect monitoring method and device, and relates to the technical field of semiconductors. The semiconductor structure defect monitoring method comprises the following steps: acquiring a overlay accuracy offset of a capacitor column and a support structure; acquiring an etching opening size of an etching film layer; determining a corresponding relationship between the overlay accuracy offset and the etching opening size; and monitoring a structure defect in a semiconductor production process based on the corresponding relationship. The technical problem of poor defect monitoring effect of the capacitor is solved, and the technical effect of improving the defect monitoring effect of the capacitor is achieved.