269 results about "Thin film electrode" patented technology

The invention discloses a communication encryption method based on a two-dimensional inorganic / inorganic Van der Waals heterojunction polarized photoelectric detector, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, two-dimensional MoSe2 material layers, two-dimensional ReS2 material layers and a thin film electrode, wherein the two two-dimensional material layers form a Van der Waals vertical heterojunction and are of an II-type heterostructure; due to anisotropic light absorption of ReS2, effective carrier collection and transport capabilities of MoSe2 and an inhibition effect of heterojunction on dark current, the photoelectric property of the two-dimensional ReS2 / MoSe2 photoelectric detector is obviously improved, and meanwhile, the two-dimensional ReS2 / MoSe2 photoelectric detector has high responsivity of 89.4 A / W, fast response speed of 30.5 s and polarization sensitive characteristics, and can be applied to the field of photoelectric detectors. On the basis, information is subjected to multiple encryption by means of a polarization state information encryption technology, so that the concealment and security of an information transmission process can be greatly improved, and a new possibility is provided for the development of a security communication technology in the future.

The present disclosure relates to mapping catheters, and in particular to mapping catheters having thin film electrodes used in sensing electrical activity within a patient. Particularly, aspects of the present disclosure are directed to a medical device having a hollow core, a balloon disposed over at least a portion of the hollow core, and a flexible framework having one or more thin film elements formed on at least a portion of the balloon. The one or more thin film elements comprise a plurality of mapping electrodes.

The present invention discloses a device, which includes a catheter and an end effector. The size and structure of at least a portion of the catheter are configured to be assembled in the inner cavity of the cardiovascular system. The end effector is positioned at the distal end of the catheter. The end effector includes a panel, a plurality of mapping electrodes positioned on a first surface of the panel, and a plurality of ablation electrodes positioned on the first surface of the panel. The mapping electrodes are configured to sense the potential in the tissue contacting the mapping electrodes. The ablation electrodes are operable to ablate the tissue contacting the ablation electrodes.

The invention discloses a preparation method and application of a CuBi2O4 film electrode, and belongs to the field of film materials. The preparation method of the CuBi2O4 film electrode comprises the following steps: mixing an aqueous solution of 0.05 mol / L-0. 2 mol / L copper acetate and an aqueous solution of 0.05 mol / L-0. 2 mol / L sodium acetate to obtain an electrolyte I, and obtaining a Cu2O film on FTO (Fluorine-doped Tin Oxide) by adopting an electrodeposition method; adding a coordination agent, KOH and fused salt KNO3 into a 0.05 mol / L-0. 3 mol / L bismuth nitrate solution or adding water to dilute to obtain a solution II; and pulling and dipping the obtained Cu2O film in the solution II, carrying out annealing treatment, washing with deionized water, and drying to obtain the CuBi2O4 film electrode. According to the preparation method disclosed by the invention, Cu2O with uniform surface and good compactness is obtained by regulating and controlling the concentration ratio of cupric acetate to sodium acetate, and the high-quality CuBi2O4 film electrode is prepared by optimizing the concentrations of the coordination agent, the mineralizing agent and the fused salt on the basis.

The invention relates to a self-repairing ionic gel electrolyte, a zinc ion battery and a preparation method and application of the self-repairing ionic gel electrolyte and the zinc ion battery. The ionic gel electrolyte comprises a polymer network, ionic liquid (1-ethyl-3-methylimidazolium tetrafluoroborate) and movable zinc ions, the polymer network is obtained through a reaction of an anionic monomer 2-acrylamido-2-methyl sodium propanesulfonate and a cationic monomer acryloyloxyethyl trimethyl ammonium chloride, and the movable zinc ions are provided by a zinc tetrafluoroborate hydrate. The zinc ion battery takes the ionic gel as an electrolyte, and a positive film electrode and a negative film electrode are arranged on two sides of the ionic gel. Compared with the prior art, the material not only has excellent mechanical properties and efficient ion transmission capability, but also has the capability of quickly repairing mechanical damage, and the completely broken material can be completely repaired after being contacted for 10 seconds under infrared light irradiation. The prepared zinc ion battery has excellent self-repairing performance, flexible performance and electrochemical performance.

The invention belongs to the technical field of flexible transparent energy storage, and discloses a preparation method and application of a flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode, according to the method, a PDMS substrate film, AgNWs and MXene are assembled layer by layer, and a Schottky barrier is formed between one-dimensional AgNWs and two-dimensional MXene, so that the MXene material is firmly attached to the surface of the AgNWs material, corrosion of the AgNWs can be prevented, and the service life of the flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode is prolonged. According to the MXene / AgNWs / PDMS composite film electrode, the cycle stability of the composite electrode is improved, a 1D / 2D heterostructure can be formed, the electrochemical storage capacity of the MXene / AgNWs / PDMS composite film electrode is effectively improved, and a flexible transparent supercapacitor with high light transmittance, high capacitance and mechanical flexibility perfectly unified is expected to be achieved.

The invention discloses a two-dimensional organic / inorganic heterojunction photoelectric nerve component and a preparation method thereof, and belongs to the technical field of photoelectric devices. According to the invention, a TMDC material MoS2 is transferred to a substrate through a mechanical stripping method, then a film electrode is plated on a MoS2 layer through an electron beam lithography method, and finally a single-layer Me-PTCDI crystal is epitaxially grown on the MoS2 layer through a back-off method to form the heterojunction. Due to the formation of the MoS2 / Me-PTCDI heterojunction, the photoelectric nerve device has excellent photosensitivity and light adaptability, and can simulate reactions of retinal essential photosensitive ganglion cells under different illumination; the device can make current change under the stimulation of light pulses so as to simulate the generation and action of human melatonin, and can realize visual adaptation in bright and dark environments under the regulation and control of grid voltage, and the device has a wide application prospect in the field of automatic driving due to the corresponding characteristics.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The invention discloses a preparation method of a nano-diamond / graphite composite film electrode with high hydrogen evolution potential and low background current, which comprises the following steps: firstly, preparing the nano-diamond / graphite composite film electrode through hot filament chemical vapor deposition, and then carrying out electrochemical anodic oxidation treatment on the composite film electrode. And finally obtaining the nano-diamond / graphite composite film electrode with high hydrogen evolution potential and low background current. According to the method disclosed by the invention, the content of diamond in the composite film electrode can be increased, and the oxygen element is grafted on the surface of the nano-diamond / graphite composite film electrode, so that the background current of the nano-diamond / graphite composite film electrode is reduced while the hydrogen evolution potential of the nano-diamond / graphite composite film electrode is improved; and a new thought and scheme are provided for design and preparation of the novel nano-diamond film-based composite electrode.

An air-coupled ultrasonic scanning platform for an air-coupled ultrasonic non-contact metrology of battery electrodes that maps the local variation in density and thickness, and detect defects during electrode casting and drying, includes: piezocomposite air-coupled transducers (Ultran) at 0.5 to 1 MHz that provide sufficient air coupling to enable sound waves to travel through air from a transmitting transducer, through the thin film electrode coated on metal current collector, and then into the receiving transducer. Non-contact, air-coupled ultrasound may be used as a technique for evaluating battery electrode films. An analytical model was derived from fundamental acoustic wave propagation principles to determine acoustic density. Voltage gain or acoustic density maps of electrode films revealed features that are not visually apparent, attributed to mass gradients.

The invention relates to the technical field of sensor preparation, and discloses a preparation method and application of a multifunctional flexible sensor. According to the flexible sensor provided by the invention, through the innovative design of the flexible material, a sensing solution which is high in sensitivity, quick in response and easy to integrate is realized. The preparation method comprises the following steps: preparing the flexible pressure sensing layer, and preparing a PVDF-HFP / [EMIM] [TFSI] micro-dome dielectric layer and a TPU micro-dome film electrode by adopting a polyvinyl alcohol (PVA) anti-micro-dome template; preparing a flexible humidity sensing layer, namely preparing an Au interdigital electrode and a Cu (OH) 2 humidity sensitive layer by taking polyimide (PI) as a substrate; and finally assembling the two layers to form the multifunctional flexible sensor. The sensor has the advantages of high sensitivity, quick response and good stability and repeatability, can be applied to the fields of gesture recognition and intelligent control, intelligent health monitoring, environment monitoring and the like, and has a wide application prospect.

The present application relates to the technical field of lead-acid battery electrode, aiming at the problem of thick lead paste on the existing lead-acid battery plate, large resistance during charging and poor rate discharge performance of the battery, a preparation method of lead-acid battery membrane electrode is disclosed, comprising the following steps: adding a binder to the prepared lead paste, rolling the lead paste containing the binder on the lead skin to form a lead paste film layer, immersing the lead skin and the attached lead paste film layer in a sulfuric acid solution, and solidifying and drying after taking out; the binder is polytetrafluoroethylene emulsion or a binder containing polytetrafluoroethylene emulsion. Unlike the high molecular film attached to the surface of the lead-acid battery plate in the prior art, the present application obtains a thin film electrode with thin thickness, uniform active material dispersion, large active material and current collector contact area and good conductivity, and has the advantages of large rate charge and discharge cycle.

Disclosed is an acoustic resonator including a substrate including a first cavity, a first electrode formed above the substrate, a piezoelectric layer formed on one surface of the first electrode, and a second electrode formed on one surface of the piezoelectric layer. Here, the piezoelectric layer includes a longitudinal section not to cover a longitudinal section of the first electrode. Also, the second electrode covers the longitudinal section of the piezoelectric layer and extends to a first interpolar cavity which spaces the first electrode at least partially apart from the piezoelectric layer. A quality factor may be increased by fixing an increase in resistance which occurs due to thin film electrodes.

The present invention generally relates to a process of fabricating an asymmetric supercapacitors device comprising synthesizing a BaO and CeO2 thin film as a first electrode using a one-step successive ionic layer adsorption and reaction (SILAR) method for uniform deposition and adhesion on a conductive substrate; synthesizing an activated carbon (AC) electrode as a second electrode; formulating a solid-state electrolyte layer comprising polyvinyl alcohol (PVA) and potassium hydroxide (KOH), wherein the solid-state electrolyte layer is formed as a gel; assembling the device by layering the first electrode, the solid-state electrolyte layer, and the second electrode in a stacked configuration, wherein the assembled device is allowed to stabilize for a period of 12-24 hours at room temperature to ensure uniform distribution of the electrolyte and structural integrity; and pressing the assembled layers together to enhance contact between electrodes and the electrolyte.

The invention belongs to the technical field of composite electrode materials, and relates to a preparation method of a NiCoCu selenide composite MXene / carbon sphere thin film electrode material, which comprises the following steps: firstly, dissolving ZIF-67 powder in a carbon sphere solution, then adding an MXene aqueous solution, stirring for 1-10 hours, and carrying out suction filtration and drying to obtain ZIF-67 MXene / CS; secondly, a solution is prepared from urea, a copper source, a nickel source and ethyl alcohol according to the proportion, ZIF-67 (at) MXene / CS is immersed in the solution, and a NiCoCu-LDH (at) MXene / CS thin film is obtained after a hydrothermal reaction; and thirdly, mixing the NiCoCu-LDH-coated MXene / CS film, selenium powder and sodium borohydride according to a mass ratio of (0.5-1): (1-2): (1-2), reacting at 150-180 DEG C for 12-24 hours, washing the obtained product with deionized water, and drying to obtain the NiCoCu-LDH-coated MXene / CS composite material. The MXene and the carbon spheres jointly provide a flexible substrate for the self-supporting material, the conductivity and the specific surface area of the material are increased, meanwhile, NiCoCu-Se is intercalated into the MXene, an intermediate buffering effect is achieved, self-stacking of the MXene is prevented, and the structure of the self-supporting material is more stable. When the self-supporting material is applied to a positive electrode material of a supercapacitor, the self-supporting material avoids using an adhesive, so that the impedance of the material is reduced, and the electrochemical performance is improved.

The invention discloses a heterojunction self-driven broadband array photoelectric detector and a preparation method thereof. The photoelectric detector comprises a substrate, an Au electrode is arranged on one side of the substrate, p-Te films are distributed on the surface of the substrate in an array mode, the p-Te films are connected with the Au film electrode, and the Au film electrode is arranged on a conducting layer. The preparation method comprises the following steps: evaporating an Au electrode at one end of a substrate; placing a mask plate on the surface of the obtained object, placing the object in a second temperature zone of a vacuum tube furnace, placing Te powder in a first temperature zone of the vacuum tube furnace, growing a p-Te film on the surface of the substrate, and removing the mask plate to obtain a p-n type heterojunction material; and covering the p-n type heterojunction material with the conductive surface of the conductive layer on which the Au film electrode is evaporated. According to the invention, the large-area Te film is synthesized, and the heterojunction type self-powered broadband array photoelectric detector of the integrated two-dimensional single crystal tellurium film with the resolution ratio of 64 pixels is prepared on the substrate in situ for the first time.

The invention provides a preparation method, a product and application of a flower-shaped carbon-based Mn-doped NiCoP thin film electrode material, and belongs to the technical field of electrochemistry. According to the flower-shaped carbon-based Mn-doped NiCoP thin film electrode material, a three-dimensional walnut shell derived porous carbon-based Mn-doped NiCo precursor is deposited and prepared on a growth substrate through a hydrothermal deposition method, then the three-dimensional walnut shell derived porous carbon-based Mn-doped NiCo precursor is subjected to phosphorization through a gas-solid reaction method, and WSC-N / O and Mn elements are introduced in the preparation process. Compared with the prior art, the preparation method has the advantages that the electrochemical activity and the electronic conductivity are enhanced, so that rapid transmission of electrons is realized, the electrochemical performance of the electrode material is improved, and the electrode material is further applied to preparation of high-performance supercapacitors and aqueous zinc ion batteries and shows excellent energy density. The electrode material provided by the invention provides a new method for designing and manufacturing a high-performance energy storage device.

MAX-phase Mo2Ga2C is used as a matrix, a liquid phase corrosion method is utilized, the preparation of the two-dimensional vacancy doped molybdenum carbide (Mo2-CTz) nano material is realized through excessive corrosion, and the two-dimensional vacancy doped molybdenum carbide (Mo2-CTz) nano material is applied to the aspect of a hybrid supercapacitor. Compared with other reported MXene materials, the influence of vacancy doping measures on the Mo2CTz nanometer material is studied, the layered MAX ceramic powder is excessively corroded through hydrofluoric acid, vacancies are introduced into a metal layer, vacancy doping of MXene is achieved, and the capacitive performance of the MXene is improved. And vacancy defects are introduced, so that the interlayer spacing of MXene can be increased, activation sites on the surface of the layered structure can be increased, the conductivity of the two-dimensional material can be improved, the utilization rate of pseudocapacitance active sites of the two-dimensional material can be improved, and finally the capacitive performance of the Mo < 2->-CTz-based electrode can be enhanced. The successful development of the two-dimensional vacancy doped Mo < 2->-CTz self-supporting film electrode material lays a foundation for the practical application of electrochemical energy storage devices such as hybrid supercapacitors and ion batteries.

The invention discloses a Weyl semimetal / TMDC heterojunction photoelectric detector and application thereof, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, a TMDC material layer, a Weyl semi-metal material layer and a thin film electrode, the TMDC material layer, the Weyl semi-metal material layer and the thin film electrode are sequentially arranged on the substrate, and the TMDC material layer and the Weyl semi-metal material layer form a Van der Waals heterojunction; the device can realize switching between a photovoltaic mode and a photoconductive mode through bias voltage control; based on the characteristic, on the basis of the single photoelectric detector, XNOR logic operation can be realized under bias regulation and control and single-wavelength light beam excitation; accordingly, the invention further provides an image encryption and decryption method, according to the method, a bias voltage sequence is generated through image coding, a laser sequence is formed in combination with a secret key matrix, multiple encryption is conducted on image information through XNOR logical operation, and the concealment and safety of information transmission can be remarkably improved; and a new path is provided for development of a future security communication technology.

The invention provides a rigidity-flexibility variable multifunctional optical genetic implantable probe and a preparation method thereof. The probe comprises a thin film electrode layer and a rigidity-flexibility variable shape memory layer arranged at the bottom of the thin film electrode layer. The micro LED is integrated in the flexible nerve probe through contact type laser transfer printing to serve as a light stimulation light source, the preparation success rate is remarkably increased, heat radiated outwards during light stimulation is reduced, and damage to brain tissue of the brain caused by high-Young-modulus optical fibers is avoided; meanwhile, a rigid-flexible variable shape memory layer is also integrated, so that the Young modulus of the probe is high when the in-vitro temperature is relatively low, fixed-point implantation can be directly carried out without an auxiliary tool, the Young modulus of the probe is reduced along with the rise of the body temperature after the probe is implanted into the body, and the probe finally adapts to the mechanical tissue strength of the brain; therefore, the implantation efficiency and the mechanical adaptability of the probe to brain tissues are improved, and micron-scale accurate implantation of the probe, neuron-scale positioning of electrical stimulation and light stimulation points and long-term stable recording of electrophysiological signals are realized.

The invention relates to the technical field of sensors, in particular to a strain sensor based on a multi-layer wrinkled structure and a preparation method and application thereof.The sensor simulates a skin wrinkled structure and belongs to a capacitive sensor, the sensor comprises a flexible medium insulating tape and two layers of flexible layered film electrodes, the flexible layered film electrodes are respectively positioned on two sides of the flexible dielectric insulating tape and cover the flexible dielectric insulating tape, and the flexible layered film electrodes are formed by combining a platinum-modified copper nanowire film (Cu (at) Pt film) with a flexible substrate material polyvinylidene fluoride (PVDF) as a conductive layer. The sensor has high sensitivity and a wide stretching range, overcomes the defects in existing material selection, and has potential application in the fields of exercise monitoring, health monitoring and information transmission.

The invention provides a preparation method and application of a MoS2-Ti / Au modified PET (Polyethylene Terephthalate) film electrode molecularly imprinted electrochemical sensor. Comprising the following steps: step 1, preparing a MoS2-Ti / Au electrode material; step 2, preparing a Prussian blue solution; step 3, preparing a pyrrole solution; 4, preparing a molecular polymerization solution; 5, carrying out an electropolymerization reaction; and step 6, carrying out elution on the polymerized MIP electrode. The invention provides a preparation method and application of a MoS2-Ti / Au modified PET (Polyethylene Terephthalate) film electrode molecularly imprinted electrochemical sensor, the MoS2-Ti / Au modified electrode is used for preparing the molecularly imprinted electrochemical sensor and detecting serotonin, the MoS2-Ti / Au modified electrode has good reproducibility, acceptable stability and high selectivity, and the MoS2-Ti / Au modified electrode is used for preparing the molecularly imprinted electrochemical sensor and detecting serotonin. The target object can be detected more quickly, accurately and effectively.

The invention belongs to the technical field of electrochemistry, and particularly relates to a method for strengthening electrolytic reaction efficiency through a programmable temperature gradient thermomagnetic effect. Specifically, a catalytic electrode comprising a plurality of Curie point materials which are arranged in a stacked manner is constructed, and when the catalytic electrode is heated to a corresponding temperature interval, each layer of material can sequentially show different magnetic properties, so that the reaction process is influenced. The Curie point characteristic of the material is utilized, continuously changing temperature fields are generated in different areas, and specific chemical reactions are selectively activated or inhibited in cooperation with magnetic field switching. The preparation method has the technical advantages that the electrolytic active membrane can be constructed on a plurality of micron-sized-thickness membrane electrode materials with different substrates, the catalytic activity of the membrane electrode material can be adjusted along with the temperature, and the membrane electrode material can be widely applied to the technical fields of electro-catalytic water decomposition, electrodialysis, electro-adsorption and the like.

The invention relates to a flexible self-supporting thin film electrode based on titanium-oxygen clusters and metal ion complex modified MXene, which is obtained by mixing an MXene colloidal solution and a titanium-oxygen cluster precursor dispersion liquid to react to form an MXene nanosheet cluster, and then doping the MXene nanosheet cluster into the MXene colloidal solution, wherein the titanium oxide cluster precursor dispersion liquid is obtained by mixing and reacting Ti (OiPr) 4, benzoic acid and metal ion dispersion liquid; in the MXene nanosheet cluster, the titanium oxide cluster is grown on the MXene nanosheet in situ; the titanium oxide cluster is a cage-shaped cluster. The invention provides an MOF type which can be stably combined with MXene under an acidic condition, the problem of re-stacking of two-dimensional MXene nanosheets is relieved, and meanwhile, more active sites are provided, so that the electrochemical activity of the two-dimensional MXene nanosheets is improved, and the application of the flexible film electrode in flexible wearable electronic products is promoted.

The invention belongs to the technical field of composite films, and particularly relates to a super-soft, electricity-conducting and heat-conducting film electrode and a preparation method thereof. The preparation method comprises the following main preparation steps: firstly, preparing a single-layer boron nitride nanosheet BNNS from a two-dimensional heat conduction material hexagonal boron nitride BN through an ultrasonic stripping technology, and then carrying out hydroxylation treatment on the BNNS to form a hydroxylated boron nitride nanosheet HO-BNNS; the preparation method comprises the following steps: mixing a HO-BNNS aqueous solution with a silver nanowire (AgNWs) or copper nanowire (CuNWs) aqueous solution, mixing with a polyvinyl alcohol (PVA) polymer substrate material to form a uniform dispersion liquid, pouring the mixed solution on the surface of a prefabricated metal nanowire thin film electrode (a substrate can be a flat substrate such as a PET flexible polymer or a silicon wafer rigid substrate), and performing high-temperature curing to obtain the metal nanowire thin film electrode. And finally, the cured film is peeled off from the substrate, so that the super-soft film electrode with excellent electric conduction and heat conduction performance is prepared, and the film can be repeatedly folded and has super-flexibility.

The application discloses a kind of gold nanoparticle loaded oxygen-doped ultrathin porous boron nitride film electrode and preparation method thereof, the preparation method includes the following steps: according to mass ratio 1:3-6:0.25-0.35, boric acid, urea, oxalic acid is prepared oxygen-doped ultrathin porous boron nitride, then gold nanoparticle is loaded oxygen-doped ultrathin porous boron nitride and coated on conductive substrate to form film electrode.The oxygen-doped ultrathin porous boron nitride film electrode loaded with gold nanoparticles prepared by the application has the advantages of large specific surface area, high electron-hole separation efficiency, fast electron transfer rate, etc., is a new type of film electrode with excellent photoelectric performance, meets the actual production demand, and has wide application prospect in photoelectrochemical field.The preparation method also has the advantages of simple process, easy operation, high preparation efficiency and low cost, and is suitable for large-scale preparation, which is beneficial to industrial application.

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

The utility model relates to the technical field of semiconductor manufacturing, in particular to a double-electrode electrostatic chuck for semiconductor equipment, which comprises a base and an electrostatic chuck main body part, the electrostatic chuck main body part is connected onto the base, and the electrostatic chuck main body part comprises a ceramic substrate, a graphical protective layer and a thin film electrode, the patterned protective layer covers the ceramic substrate, two thin film electrodes are arranged between the patterned protective layer and the ceramic substrate to form a dual-electrode structure, and the thin film electrodes are located between the ceramic substrate and the patterned protective layer or embedded in the ceramic substrate. According to the utility model, by forming the electrostatic chuck main body part with the graphical protective layer, the plasma resistance, the surface hardness and the thermal conductivity of the electrostatic chuck main body part are enhanced; the problems that in the prior art, an electrostatic chuck is prone to damage and the structure of the electrostatic chuck is unstable at high temperature are solved, and the service life of the electrostatic chuck is prolonged. The utility model also discloses a plasma processing device.

A method for manufacturing an electrophoretic display layer including various thin films deposited directly on a microcapsule layer of an electrophoretic medium. In one embodiment, a thin film of light-transmissive conductive material is deposited to produce a transparent front electrode for an electrophoretic display. In some embodiments, both a dielectric layer and a thin film of light-transmissive conductive material are deposited on the microcapsules.

The present invention relates to the technical field of electronic components, and particularly relates to a manufacturing method of a transparent flexible thin-film electrode, comprising the following steps: (1) pre-treating the surface of a substrate; (2) coating a polyimide slurry on the surface of the pre-treated substrate and curing it to obtain a polyimide layer; (3) opening conductive grooves on the polyimide layer according to the design of an electrode pattern; (4) spraying a heat-conducting ink in the conductive grooves and curing it to obtain a heat-conducting protective layer; (5) filling a nano-silver conductive ink into the conductive grooves sprayed with the heat-conducting ink, and drying and curing; (6) removing the redundant nano-silver conductive ink outside the conductive grooves to obtain an electrode pattern; (7) coating an ultraviolet curing solution on the surface of the polyimide coating after obtaining the electrode pattern and curing it to obtain a transparent encapsulation layer. The electrode prepared by the present invention has a response speed of 2-5 s, a number of bending resistance times of more than 300,000 times, a temperature of 35-50 °C after heating for 72 h, good high-temperature performance, and greatly improved service life.