158 results about "Thin film electrode" patented technology

The invention relates to a self-repairing ionic gel electrolyte, a zinc ion battery and a preparation method and application of the self-repairing ionic gel electrolyte and the zinc ion battery. The ionic gel electrolyte comprises a polymer network, ionic liquid (1-ethyl-3-methylimidazolium tetrafluoroborate) and movable zinc ions, the polymer network is obtained through a reaction of an anionic monomer 2-acrylamido-2-methyl sodium propanesulfonate and a cationic monomer acryloyloxyethyl trimethyl ammonium chloride, and the movable zinc ions are provided by a zinc tetrafluoroborate hydrate. The zinc ion battery takes the ionic gel as an electrolyte, and a positive film electrode and a negative film electrode are arranged on two sides of the ionic gel. Compared with the prior art, the material not only has excellent mechanical properties and efficient ion transmission capability, but also has the capability of quickly repairing mechanical damage, and the completely broken material can be completely repaired after being contacted for 10 seconds under infrared light irradiation. The prepared zinc ion battery has excellent self-repairing performance, flexible performance and electrochemical performance.

The invention belongs to the technical field of flexible transparent energy storage, and discloses a preparation method and application of a flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode, according to the method, a PDMS substrate film, AgNWs and MXene are assembled layer by layer, and a Schottky barrier is formed between one-dimensional AgNWs and two-dimensional MXene, so that the MXene material is firmly attached to the surface of the AgNWs material, corrosion of the AgNWs can be prevented, and the service life of the flexible stretchable transparent MXene / AgNWs / PDMS composite film electrode is prolonged. According to the MXene / AgNWs / PDMS composite film electrode, the cycle stability of the composite electrode is improved, a 1D / 2D heterostructure can be formed, the electrochemical storage capacity of the MXene / AgNWs / PDMS composite film electrode is effectively improved, and a flexible transparent supercapacitor with high light transmittance, high capacitance and mechanical flexibility perfectly unified is expected to be achieved.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

An air-coupled ultrasonic scanning platform for an air-coupled ultrasonic non-contact metrology of battery electrodes that maps the local variation in density and thickness, and detect defects during electrode casting and drying, includes: piezocomposite air-coupled transducers (Ultran) at 0.5 to 1 MHz that provide sufficient air coupling to enable sound waves to travel through air from a transmitting transducer, through the thin film electrode coated on metal current collector, and then into the receiving transducer. Non-contact, air-coupled ultrasound may be used as a technique for evaluating battery electrode films. An analytical model was derived from fundamental acoustic wave propagation principles to determine acoustic density. Voltage gain or acoustic density maps of electrode films revealed features that are not visually apparent, attributed to mass gradients.

The invention relates to the technical field of sensor preparation, and discloses a preparation method and application of a multifunctional flexible sensor. According to the flexible sensor provided by the invention, through the innovative design of the flexible material, a sensing solution which is high in sensitivity, quick in response and easy to integrate is realized. The preparation method comprises the following steps: preparing the flexible pressure sensing layer, and preparing a PVDF-HFP / [EMIM] [TFSI] micro-dome dielectric layer and a TPU micro-dome film electrode by adopting a polyvinyl alcohol (PVA) anti-micro-dome template; preparing a flexible humidity sensing layer, namely preparing an Au interdigital electrode and a Cu (OH) 2 humidity sensitive layer by taking polyimide (PI) as a substrate; and finally assembling the two layers to form the multifunctional flexible sensor. The sensor has the advantages of high sensitivity, quick response and good stability and repeatability, can be applied to the fields of gesture recognition and intelligent control, intelligent health monitoring, environment monitoring and the like, and has a wide application prospect.

The present application relates to the technical field of lead-acid battery electrode, aiming at the problem of thick lead paste on the existing lead-acid battery plate, large resistance during charging and poor rate discharge performance of the battery, a preparation method of lead-acid battery membrane electrode is disclosed, comprising the following steps: adding a binder to the prepared lead paste, rolling the lead paste containing the binder on the lead skin to form a lead paste film layer, immersing the lead skin and the attached lead paste film layer in a sulfuric acid solution, and solidifying and drying after taking out; the binder is polytetrafluoroethylene emulsion or a binder containing polytetrafluoroethylene emulsion. Unlike the high molecular film attached to the surface of the lead-acid battery plate in the prior art, the present application obtains a thin film electrode with thin thickness, uniform active material dispersion, large active material and current collector contact area and good conductivity, and has the advantages of large rate charge and discharge cycle.

The invention discloses a Weyl semimetal / TMDC heterojunction photoelectric detector and application thereof, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, a TMDC material layer, a Weyl semi-metal material layer and a thin film electrode, the TMDC material layer, the Weyl semi-metal material layer and the thin film electrode are sequentially arranged on the substrate, and the TMDC material layer and the Weyl semi-metal material layer form a Van der Waals heterojunction; the device can realize switching between a photovoltaic mode and a photoconductive mode through bias voltage control; based on the characteristic, on the basis of the single photoelectric detector, XNOR logic operation can be realized under bias regulation and control and single-wavelength light beam excitation; accordingly, the invention further provides an image encryption and decryption method, according to the method, a bias voltage sequence is generated through image coding, a laser sequence is formed in combination with a secret key matrix, multiple encryption is conducted on image information through XNOR logical operation, and the concealment and safety of information transmission can be remarkably improved; and a new path is provided for development of a future security communication technology.

The invention provides a rigidity-flexibility variable multifunctional optical genetic implantable probe and a preparation method thereof. The probe comprises a thin film electrode layer and a rigidity-flexibility variable shape memory layer arranged at the bottom of the thin film electrode layer. The micro LED is integrated in the flexible nerve probe through contact type laser transfer printing to serve as a light stimulation light source, the preparation success rate is remarkably increased, heat radiated outwards during light stimulation is reduced, and damage to brain tissue of the brain caused by high-Young-modulus optical fibers is avoided; meanwhile, a rigid-flexible variable shape memory layer is also integrated, so that the Young modulus of the probe is high when the in-vitro temperature is relatively low, fixed-point implantation can be directly carried out without an auxiliary tool, the Young modulus of the probe is reduced along with the rise of the body temperature after the probe is implanted into the body, and the probe finally adapts to the mechanical tissue strength of the brain; therefore, the implantation efficiency and the mechanical adaptability of the probe to brain tissues are improved, and micron-scale accurate implantation of the probe, neuron-scale positioning of electrical stimulation and light stimulation points and long-term stable recording of electrophysiological signals are realized.

The application discloses a kind of gold nanoparticle loaded oxygen-doped ultrathin porous boron nitride film electrode and preparation method thereof, the preparation method includes the following steps: according to mass ratio 1:3-6:0.25-0.35, boric acid, urea, oxalic acid is prepared oxygen-doped ultrathin porous boron nitride, then gold nanoparticle is loaded oxygen-doped ultrathin porous boron nitride and coated on conductive substrate to form film electrode.The oxygen-doped ultrathin porous boron nitride film electrode loaded with gold nanoparticles prepared by the application has the advantages of large specific surface area, high electron-hole separation efficiency, fast electron transfer rate, etc., is a new type of film electrode with excellent photoelectric performance, meets the actual production demand, and has wide application prospect in photoelectrochemical field.The preparation method also has the advantages of simple process, easy operation, high preparation efficiency and low cost, and is suitable for large-scale preparation, which is beneficial to industrial application.

A method for manufacturing an electrophoretic display layer including various thin films deposited directly on a microcapsule layer of an electrophoretic medium. In one embodiment, a thin film of light-transmissive conductive material is deposited to produce a transparent front electrode for an electrophoretic display. In some embodiments, both a dielectric layer and a thin film of light-transmissive conductive material are deposited on the microcapsules.

The application discloses a preparation method of a metal nanometer film electrode with a high limit working temperature, and relates to the field of nanometer film electrodes. In a vacuum film plating chamber, a metal target is used to prepare a metal nanometer film with a nanometer thickness on a silicon wafer substrate by using a multi-target electron beam evaporation film plating instrument, then the aluminum target is switched to, and an aluminum nanometer film with a predetermined nanometer thickness is prepared on the surface of the metal nanometer film by using the aluminum target and the multi-target electron beam evaporation film plating instrument, so as to obtain the metal nanometer film electrode. The aluminum nanometer film is stably adsorbed on the surface of the metal nanometer film at high temperature, and the thickness is controllable, the surface is flat, and the bonding strength with the surface of the metal nanometer film is high. The aluminum nanometer film is oxidized to form an aluminum oxide film in air, which can effectively avoid high-temperature oxidation of the metal nanometer film, so as to improve the oxidation resistance of the metal nanometer film electrode, and make the metal nanometer film electrode have a higher limit working temperature.

The application discloses a self-powered temperature sensor based on thermoelectric effect and a preparation method and application thereof, and aims to provide a temperature sensor based on high-performance bismuth telluride-based thin film thermoelectric material, which has high sensitivity and strong flexibility, and a preparation method and application thereof in monitoring soil temperature of a greenhouse. The temperature sensor comprises a thermoelectric module, the thermoelectric module comprises a base plate, the base plate is provided with N-type bismuth telluride thin films and P-type antimony telluride thin films which are distributed in a scattering mode, the N-type bismuth telluride thin films and the P-type antimony telluride thin films are arranged at intervals, the N-type bismuth telluride thin films and the P-type antimony telluride thin films are integrated into multiple pairs of P-N junction thermoelectric legs by being connected in series through thin film electrodes, a center hollow hole is arranged on an inner ring formed by the thin film electrodes on the base plate, the hollow position at the center hollow hole and the thin film electrodes of the inner ring are encapsulated by high-thermal-conductivity material, and a thermal-conductivity encapsulation layer is formed in a middle region. The sensor has high sensitivity, strong flexibility and the ability of accurate monitoring.

The present invention discloses a method for constructing a secondary ion battery energy storage model device suitable for surface characterization, comprising the following steps: covering one end of a conductive substrate with a shielding layer, vacuuming a magnetron sputtering chamber at a magnetron sputtering temperature of 395°C and a vacuum degree of 1‑5 Pa, preparing a V2O5 thin film electrode at a sputtering power of 30‑300W, removing the shielding layer, and using an electrode clamp to clamp the conductive substrate of the thin film electrode not covered by the V2O5 layer, ensuring that the working electrode can be electrically connected to an external electrochemical workstation, thereby completing the assembly of the secondary ion battery energy storage model battery device. The thin film electrode prepared by the magnetron sputtering method of the present invention has a single component and a regular structure. The test results are information on the true state of the reactive material, without interference from impurities adsorbed between particles, and the results are more accurate.

Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.

This invention belongs to the field of composite electrode materials technology, and relates to a method for preparing a NiCoCu selenide composite MXene / carbon sphere thin film electrode material, comprising: first, dissolving ZIF-67 powder in a carbon sphere solution, then adding an MXene aqueous solution, stirring for 1-10 hours, filtering and drying to obtain ZIF-67@MXene / CS; second, preparing a solution according to the proportion of urea, copper source, nickel source and ethanol, immersing ZIF-67@MXene / CS, and reacting hydrothermally to obtain a NiCoCu-LDH@MXene / CS thin film; third, mixing the NiCoCu-LDH@MXene / CS thin film, selenium powder and sodium borohydride in a mass ratio of 0.5-1:1-2:1-2, reacting at 150-180°C for 12-24 hours, washing the obtained product with deionized water and drying to obtain the final product. MXene and carbon spheres together provide a flexible substrate for the self-supporting material, increasing its conductivity and specific surface area. Simultaneously, NiCoCu-Se intercalation into the MXene acts as an intermediate buffer, preventing MXene self-stabilization and making its structure more stable. When applied as the positive electrode material for supercapacitors, the self-supporting material avoids the use of binders, reducing the material's impedance and improving electrochemical performance.

Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510° C. to 1300° C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

The invention discloses a flexible multi-channel sensing patch integrated with electroencephalogram and myoelectricity acquisition and a system comprising the flexible multi-channel sensing patch. The flexible multi-channel sensing patch comprises a flexible substrate, a circuit and conductive gel, wherein the flexible substrate is made of a flexible polymer and / or a fiber material; the circuit comprises a main circuit, a stretchable wire and at least eight film electrodes, the main circuit comprises a bio-electricity signal monitoring chip, and at least part of the stretchable wire is arranged in a winding shape and conducts the film electrodes and the main circuit; the circuit is arranged on the flexible substrate, and the conductive gel is adhered to one surface, far away from the flexible substrate, of the film electrode. Through cooperation of the flexible substrate, the stretchable wire, the film electrode and the conductive gel, the flexible multi-channel sensing patch and a skin interface have a better fitting degree, the resistance is reduced, and the wearing comfort and the signal acquisition accuracy are improved.

The application discloses a high-silicon-loaded carbon nanotube composite film electrode and a preparation method and application thereof. The preparation method comprises the following steps: providing a nanosilicon dispersion liquid containing nanosilicon, polyvinylpyrrolidone and a solvent; making a continuous carbon nanotube network fully contact with the nanosilicon dispersion liquid, so that the continuous carbon nanotube network and the nanosilicon are continuously and in situ dynamically and uniformly compounded, and are synchronously shrunk and fiberized; through continuous collection of layer-by-layer assembly and drying, a carbon nanotube / nanosilicon composite film is prepared; and then high-temperature carbonization and roller pressing treatment are carried out, so that the high-silicon-loaded carbon nanotube composite film electrode is prepared. The in-situ continuous compounding technology is adopted to prepare the high-silicon-loaded carbon nanotube composite film electrode; the long-range continuous and dense carbon nanotube conductive framework in the electrode can realize high-silicon loading and simultaneously enhance the structural stability of the electrode; and the prepared composite film electrode has excellent tensile and bending resistance, conductivity and lithium storage performance (specific capacity and cycle stability).

A robotic device comprises an actuator hinge and a movable element connected thereto. The actuator hinge includes a bottom electrode, a top electrode, and a solid-state ionic material layer between the bottom and the top electrodes. A switch comprises a first element including a movable element. The movable element has a top thin-film electrode, a bottom thin-film electrode, and a solid-state ionic material layer between the top and the bottom thin-film electrode. In response to an applied first voltage, the first element changes shape from a first shape to a second shape. In response to an applied second voltage different from the first voltage, the first element changes from the second shape to the first shape. The switch is in a first state when the first element is configured in the first shape. The switch is in a second state when the first element is configured in the second shape.

The invention discloses a gradient segmented flag wind sensor with a self-powered warning function. The gradient segmented flag wind sensor comprises a first sensing structure and a second sensing structure which are oppositely arranged, the first sensing structure comprises a substrate film I (1) and an electrode film I (2) which are stacked and pasted; wherein the substrate film I (1) has different thicknesses in the horizontal direction; the second sensing structure comprises a friction layer film (3), an electrode film II (4) and a substrate film II (5) which are sequentially stacked and adhered; wherein the friction layer film is opposite to the electrode film I (2) of the first sensing structure; and the substrate film II (5) has different thicknesses in the horizontal direction. According to the invention, high-precision wind speed sensing can be realized under conventional conditions, and a self-powered illumination early warning mechanism can be automatically triggered for wind power of level 5 and above under abnormal conditions such as sudden power failure.

A transparent composite conductive film electrode for ultraviolet photoelectric devices is composed of an electrode bottom layer and a top layer on the surface of the electrode bottom layer, the electrode bottom layer is a silver nanowire film, and the top layer is a pyrolysis zirconium acetylacetonate protective layer, the pyrolysis zirconium acetylacetonate protective layer is a precursor solution prepared by taking zirconium acetylacetonate as a solute and taking ethanol and dimethylformamide as a composite solvent, the precursor solution is deposited on the surface of the silver nanowire film through atomization pyrolysis, and finally vacuum annealing is carried out to obtain the pyrolysis zirconium acetylacetonate protective layer which is decomposed into a complex component. By dissolving zirconium acetylacetonate in a composite solvent composed of DMF and ethanol, a transparent conductive film is formed on the surface of the Ag nanowire film through spray pyrolysis deposition, the light transmittance of the conductive film under 310 nm ultraviolet light reaches 97.7% of the Ag nanowire film without a protective layer, and the composite electrode effectively improves the charge collection capacity and transmission stability of the electrode.

The present application relates to a tungsten-niobium bimetallic oxide electrochromic film, an electrochromic film electrode and a preparation method thereof. The electrochromic film comprises tungsten-niobium bimetallic oxide in a nanowire structure or a nanowire cluster structure formed by self-agglomeration of nanowires. In the tungsten-niobium bimetallic oxide, the atomic ratio of tungsten to niobium is 2:1-1:6. The electrochromic film electrode comprises a conductive substrate and the electrochromic film grown on the conductive substrate, and the preparation method comprises the following steps: dissolving a tungsten source and a niobium source in an acidic solvent to obtain a precursor solution according to the atomic ratio of tungsten to niobium; immersing the conductive substrate in the precursor solution to perform a hydrothermal reaction; and after the reaction is completed, the tungsten-niobium bimetallic oxide electrochromic film electrode is obtained after cleaning and drying. Compared with the prior art, the present application has the advantages of wide wavelength range, large light modulation, high coloring efficiency, multiple response time options and the like.

An apparatus includes a catheter and an end effector. At least a portion of the catheter is sized and configured to fit within a lumen of a cardiovascular system. The end effector is positioned at a distal end of the catheter. The end effector includes a panel, a plurality of mapping electrodes positioned on a first surface of the panel, and a plurality of ablation electrodes positioned on the first surface of the panel. The mapping electrodes are configured to sense electrical potentials in tissue contacting the mapping electrodes. The ablation electrodes are operable to ablate tissue contacting the ablation electrodes.

The invention relates to the technical field of high-performance thin film energy storage electrodes, and particularly discloses a preparation method of a high-performance graphene-based electrochemical energy storage electrode material. Comprising the following steps: taking ammonia water and deionized water to prepare a mixed solution, adding rhein, uniformly mixing, dipping a graphene oxide (GO) film into the solution, and carrying out hydrothermal reaction to obtain the Rhein (at) RGO film electrode material. The Rhein (at) RGO thin film with a porous structure is obtained by loading the Rhein (at) RGO thin film onto RGO through a simple hydrothermal method and a non-covalent modification method. And the RGO and the rhein generate a synergistic effect. The graphene skeleton of the Rhein (at) RGO can provide a channel for electrons to promote rapid transmission of the electrons, so that good rate capability is maintained, and the rhein can provide extra pseudocapacitance for the electrode through an oxidation-reduction reaction. The Rhein (at) RGO thin film electrode maintains good rate capability, and meanwhile, the specific capacitance of the material is greatly improved.

The invention provides GaS powder, a GaS thin film electrode, a preparation method of the GaS thin film electrode and a photoelectric detector, and relates to the technical field of semiconductor materials. The preparation method of the GaS powder comprises the following steps: mixing choline chloride and urea, and performing stirring, vacuum cooling and water removal treatment to obtain a first intermediate product; in a protective atmosphere, adding GaCl3 into the first intermediate product for multiple times to obtain a second intermediate product; adding thiourea into the second intermediate product for multiple times to obtain a third intermediate product; adding NaBH4 into the third intermediate product to obtain a fourth intermediate product; the fourth intermediate product is subjected to annealing treatment, after annealing treatment, citric acid is adopted for cleaning, and GaS powder is obtained after centrifugal treatment. According to the invention, the crystallinity of the GaS material can be improved.

To provide a catalyst electrode, a method for manufacturing a catalyst electrode, and a membrane electrode assembly.SOLUTION: A catalyst electrode according to an embodiment of the present disclosure includes: a metal layer; and a catalyst layer formed on the metal layer, wherein the catalyst layer includes silver and iridium.SELECTED DRAWING: Figure 1

Disclosed is an acoustic wave resonator including a substrate including a first cavity, a first electrode formed above the substrate, a piezoelectric layer formed on one surface of the first electrode, and a second electrode formed on one surface of the piezoelectric layer. Herein, the piezoelectric layer includes a longitudinal face which does not cover a longitudinal face of the first electrode. Further, the second electrode covers the longitudinal face of the piezoelectric layer and extends to a first inter-electrode cavity which at least partially spaces the first electrode from the piezoelectric layer. A quality factor can be increased by addressing an increase in electrical resistance due to a thin film electrode.

A light-emitting diode (LED) module and a display device having the LED module are provided, the LED module enabling free structural design using fan-out interconnects and insulating layers. The LED module having a multilayer structure includes: a substrate; LEDs on the substrate configured to emit light toward the substrate; a plurality of upper electrodes on and connected to the LEDs; an upper insulating layer surrounding the plurality of upper electrodes; glass-on-glass (FOG) electrodes on the upper insulating layer; and a fan-out interconnect structure configured to connect the plurality of upper electrodes to the FOG electrodes through the upper insulating layer.

The application relates to a preparation method and application of a minimally invasive implantable composite fiber sensor, which is prepared by means of curling, folding, core curling and the like of a patterned stretchable thin film electrode. The diameter of the sensor is micron level, and the sensor can be implanted in the body in a minimally invasive manner. The sensor has the characteristics of good biocompatibility, long-term implantability, simple preparation, good designability and the like, and can be used in the fields of deep brain electroencephalogram monitoring and electrical stimulation for epilepsy early warning and intervention, implantable electromyography-stress monitoring for bladder closed-loop monitoring and the like.

The invention relates to the field of phase change switches, and provides a phase change switch with a double-layer micro heater in order to solve the problem that an existing phase change switch is difficult to realize high-precision and high-stability regulation and control, and the phase change switch comprises a substrate layer, a bottom micro heating layer, a bottom dielectric layer, a phase change material layer, a phase change layer film electrode, a top dielectric layer and a top micro heating layer which are sequentially overlapped, the bottom micro-heating layer and the top micro-heating layer are connected in parallel; the heating area of the bottom micro-heating layer abuts against the bottom dielectric layer, the heating area of the top micro-heating layer abuts against the top dielectric layer, and the orthographic projection, facing the bottom dielectric layer, of the top dielectric layer completely covers the phase change material layer. According to the invention, a structure which is long in heat path and slow in speed due to the fact that the phase change material permeates from one side to the whole phase change material area by depending on heat conduction in the traditional single-side heating process is improved into a double-layer structure, and simultaneous and symmetrical heating is carried out from two directions, so that the thermal field establishment time is greatly shortened, and the phase change material can be heated to the phase change temperature more quickly.