A composite
interposer for providing power and
signal connections between an
integrated circuit chip or chips and a substrate. The
interposer includes a
signal core formed from a conductive power /
ground plane positioned between two
dielectric layers. A method for fabricating a composite
interposer comprising disposing a
silicon layer on a substrate, and selectively
etching the
silicon layer down to the substrate to develop
silicon openings with a silicon profile, and to
expose part of the substrate. Vias are formed through the exposed part of the substrate. The method additionally includes filling the vias and the silicon openings with a filler material (e.g., a high-aspect-ratio-capable photodefinable
epoxy polymer) to form filled silicon openings and filled vias, forming first openings through the filled silicon openings and through the filled vias, forming second opening through filler material to
expose semiconductor devices on the silicon layer, and interconnecting electrically, through the first openings and through the second openings, the exposed
semiconductor devices with pads disposed against a bottom of the substrate.