409 results about "Floating electrode" patented technology

A pulse stimulation system configured for implantation into a patient's body comprises a pulse stimulator, a conductive stimulation lead having a proximal end electrically coupled to the pulse simulator and having a distal end, and an electrode assembly coupled to the distal end of the stimulation lead. The electrode assembly comprises an electrode body having a therapy electrode thereon that is electrically coupled to the stimulation lead for delivering therapy to the patient. A floating electrode is configured to contact the patient's body tissue and has a surface area substantially larger than that of the therapy electrode. A filter is coupled between the therapy electrode and the floating electrode for diverting RF energy toward the floating electrode and away from the therapy electrode.

A pulse stimulation system configured for implantation into a patient's body comprises a pulse stimulator, a conductive stimulation lead having a proximal end electrically coupled to the pulse simulator and having a distal end, and an electrode assembly coupled to the distal end of the stimulation lead. The electrode assembly comprises an electrode body having a therapy electrode thereon that is electrically coupled to the stimulation lead for delivering therapy to the patient. A floating electrode is configured to contact the patient's body tissue and has a surface area substantially larger than that of the therapy electrode. A filter is coupled between the therapy electrode and the floating electrode for diverting RF energy toward the floating electrode and away from the therapy electrode.

A FinFET split gate EEPROM structure includes a semiconductor substrate and an elongated semiconductor fin extending above the substrate. A control gate straddles the fin, the fin's sides and a first drain-proximate portion of a channel between a source and drain in the fin. The control gate includes a tunnel layer and a floating electrode over which are a first insulative stratum and a first conductive stratum. A select gate straddles the fin and its sides and a second, source-promixate portion of the channel. The select gate includes a second insulative stratum and a second conductive stratum. The insulative strata are portions of a continuous insulative layer covering the substrate and the fin. The conductive strata are electrically continuous portions of a continuous conductive layer formed on the insulative layer.

The present invention provides a flash memory element and its manufacturing method having improved overall memory characteristics by constituting a double-gate element for improving the scaling down characteristic of flash memory element. A flash memory element comprises: a first oxide film formed on a surface of a silicon substrate; a fin active area vertically formed on the first oxide film; a gate tunneling oxide film formed on the fin active area; a floating electrode formed on the surfaces of the gate tunneling oxide film and the first oxide film; a inter-gates oxide film formed on the surface of the floating electrode; and a control electrode formed on the surface of the inter-gates oxide film. With the above double-gate flash memory structure, a flash memory element in the present invention improves the scaling down characteristic and the programming and retention characteristic of a flash memory element.

A display device having a highly reliable electrostatic capacitive type touch panel which allows finger touch inputting and possesses excellent detection sensitivity is provided. With respect to X electrodes and Y electrodes which are formed on an electrostatic capacitive type touch panel, either one of the X electrodes and the Y electrodes is divided corresponding to a ratio between the number of X electrodes and the number of Y electrodes, and a floating electrode is formed in gaps formed along with the reduction of area of the electrode thus adjusting the area of the electrode. Due to the contraction of the area of the individual electrode, a noise level can be lowered more compared to lowering of a signal level and hence, an S / N ratio can be increased thus enhancing the detection sensitivity. Further, a line is branched on a flexible printed circuit board, intersecting lines are formed on a back surface of the flexible printed circuit board, and the intersecting lines are arranged to orthogonally intersect with lines formed on a front surface of the flexible printed circuit board thus lowering line capacitance.

An electrosurgical instrument, system and methods are provided for the vaporization, cutting, coagulation, or treatment of tissue in the presence of an electrically conductive fluid medium. The electrosurgical probe comprises at least one active electrode, and at least one “floating” electrode having at least one end in close proximity to at least one active electrode. The floating electrode is not connected in any way to the electrosurgical power supply, but rather has a “floating” potential determined by the shape and position of the electrode. The floating electrode increases current density in the region of the probe distal end.

An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.

The embodiments described herein provide devices and methods that facilitate improved sensor devices. In one embodiment, a capacitive input device is provided that includes a processing system, a plurality of sensing electrodes configured to sense objects in a sensing region, a conductor, and a shield layer comprising at least one shield electrode, where the at least one shield electrode is disposed between the plurality of sensing electrodes and the conductor. The processing system is configured to operate in a first mode and a second mode. When operating in the first mode the processing system is configured to determine position information for objects in the sensing region using the plurality of sensing electrodes. When operating in a second mode the processing system is configured to electrically float the at least one shield electrode and to determine force information for objects in the sensing region using the plurality of sensing electrodes.

A dielectric material layer is formed on a bottom surface and sidewalls of a trench in a semiconductor substrate. The silicon oxide layer forms a drift region dielectric on which a field plate is formed. Shallow trench isolation may be formed prior to formation of the drift region dielectric, or may be formed utilizing the same processing steps as the formation of the drift region dielectric. A gate dielectric layer is formed on exposed semiconductor surfaces and a gate conductor layer is formed on the gate dielectric layer and the drift region dielectric. The field plate may be electrically tied to the gate electrode, may be an independent electrode having an external bias, or may be a floating electrode. The field plate biases the drift region to enhance performance and extend allowable operating voltage of a lateral diffusion field effect transistor during operation.

Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor.

An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between a first electrode and a second electrode, includes: a carrier generation layer, which is a floating electrode, is embodied in the electroluminescent film; an insulting film between the first electrode and the electroluminescent film, and an insulating film between the second electrode and the electroluminescent film, wherein the organic electroluminescent device is driven by an alternating current bias.

The conventional flash memory device is fabricated by the MOS processing technology on a bulk substrate and has a similar configuration to an MOS device.While the conventional CMOS device has a superior scaling down characteristic, the scaling down characteristic of a flash memory device is poor due to the inability to reduce the thickness below 7 nm or 8 nm for the tunneling oxide film where the charges in the channel are tunneled into the floating electrode through the tunneling oxide.In order to resolve this problem, the present invention, instead of a SOI wafer, uses a cheaper bulk silicon wafer with lower defect density. A wall shape Fin active region where the channel and the source / drain are formed is connected to the bulk silicon substrate by which floating body effect and heat conduction problem are resolved. a flash memory device is fabricated by forming a tunneling oxide film on side surfaces of the Fin active and a floating (storage) electrode where the charges could be stored.The above structure has a superior scaling down characteristic and enhanced memory performance due to a double-gate flash memory device structure.

The conventional flash memory device is fabricated by the MOS processing technology on a bulk substrate and has a similar configuration to an MOS device. While the conventional CMOS device has a superior scaling down characteristic, the scaling down characteristic of a flash memory device is poor due to the inability to reduce the thickness below 7 nm or 8 nm for the tunneling oxide film where the charges in the channel are tunneled into the floating electrode through the tunneling oxide. In order to resolve this problem, the present invention, instead of a SOI wafer, uses a cheaper bulk silicon wafer with lower defect density. A wall shape Fin active region where the channel and the source / drain are formed is connected to the bulk silicon substrate by which floating body effect and heat conduction problem are resolved. a flash memory device is fabricated by forming a tunneling oxide film on side surfaces of the Fin active and a floating (storage) electrode where the charges could be stored. The above structure has a superior scaling down characteristic and enhanced memory performance due to a double-gate flash memory device structure.

An inexpensive DNA chip / DNA microarray system capable of highly accurate measurement with low running cost. A DNA probe 8 is immobilized on a floating electrode 7 connected to a gate electrode 5 of a field effect transistor. Hybridization with a target gene is carried out on the surface of the floating electrode, when a change in surface charge density is detected using a field effect.

An electrostatically controlled, tunable Fabry-P+E,acu e+EE rot interferometer is provided with a first, fixed mirror (4) to which a floating electrode (2) is fitted, a second, movable mirror (6) to which first and second control electrodes (8, 10) are fitted, and a resonant cavity of length d, defined by the first and second mirrors. The application of an electrical voltage between the two control electrodes operates to cause displacement of the movable mirror in relation to the fixed mirror, thereby modifying the length of the resonant cavity of the Fabry-P+E,acu e+EE rot interferometer.

In contrast to instruments of the prior art that require bulky, cumbersome and / or costly electrical connections and energy sources, instruments designed in accordance with the instant disclosure are both portable and self-powered. The electrosurgical instruments of the present invention are not limited to a particular use or construction and can be adapted for operation with or without a patient return electrode (sometimes referred to as return pad or plate), in dry or wet fields, in the presence of bodily fluids (such as blood saliva and more), electrically conductive or non-conductive fluids. They may further be optionally equipped or configured for irrigation and or aspiration of liquids, gases or cryogenics, either external, remote or on-board. The electrode component of the electrosurgical instrument of the present invention may be monopolar, bipolar, or multipolar and may optionally include one or more floating electrodes. The electrosurgical instruments of the present invention may be single use (disposable) or multi-use (reusable) and can be compatible with various image-guiding systems, like fluoroscopic, ultrasound and others.

A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode part 10 is formed of electrodes 11 and 12 without dielectric material interposed therebetween. An arc-extinguishing capacitor 13 as a charge storage part for storing charge is connected in series to the electrode part 10. An AC power source 15 generating plasma by causing self-arc-extinguishing discharge between the electrodes 11 and 12 by applying AC voltage to charge and discharge the arc-extinguishing capacitor 13, is connected to both ends of a circuit in which the electrode part 10 and the arc-extinguishing capacitor 13 are connected in series. The arc-extinguishing capacitor 13 and one electrode 12 of the electrode part 10 connected thereto are unitized, for making the electrode part multi-polarized. A unit is constituted of a floating electrode serving as both of the one electrode 12 of the electrode part 10 and one electrode of the arc-extinguishing capacitor 13, an insulating material provided around the floating electrode and a grounding electrode provided around the insulating material.

The present invention relates to a nano-scale flash memory device having a saddle structure, and a fabrication method thereof. Particularly, the invention relates to a highly integrated, high-performance flash memory device having a saddle structure for improving the scaling-down characteristic and performance of the MOS-based flash memory device. According to the invention, a portion of an insulating film around a recessed channel is selectively removed to expose the surface and sides of the recessed channel. A tunneling insulating film is formed on the exposed surface and sides of the recessed channel. On the resulting structure, a floating electrode, an inter-electrode insulating film and a control electrode are formed, thus fabricating the device. Particularly when the floating electrode is made of an insulating nitride film or pluralities of nano-scale dots, an excellent memory device can be made without using an additional mask. According to the invention, the scaling-down characteristic of the device is excellent, and current drive capability can be greatly increased since a channel through which current can flow is formed on the surface and sides of the recessed channel. Also, the ability of the control electrode to control the channel can be enhanced, so that memory write / erase characteristics can be improved.

An exemplary liquid crystal display (LCD) (200) includes a first substrate (210); a second substrate (230) opposite to the first substrate; a liquid crystal layer (250) sandwiched between the first substrate and the second substrate; a first common electrode (211), a first insulating layer (212), and pixel electrodes provided at an inner surface of the first substrate in that order; and second common electrodes (231) and floating electrodes (233) provided at the second substrate. The first common electrode and the pixel electrodes, and the second common electrodes and the floating electrodes, respectively produce two electric fields in the liquid crystal layer corresponding to each other. A combined electric field strength is uniformly distributed in the liquid crystal layer, so that all the liquid crystal molecules can be sufficiently twisted. Thus a viewing angle, a degree of chroma, and a transmission ratio of the LCD are improved.

A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductor bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.

To provide a plasma igniter capable of generating a discharge such as a pulse streamer discharge in a large region even by application of a low voltage, implementing powerful ignition by pulse voltage application in two or more stages, improving an air-fuel ratio (A / F), and reducing a CO2 emission amount.A plasma igniter includes an igniter part having a combustion chamber, and a discharge part arranged in such a manner that its discharge tip end is exposed to the combustion chamber. The discharge tip end has a column-shaped anode, an annular cathode arranged to be a predetermined interval away from an anode tip end part, and an annular floating electrode arranged between the anode tip end part and the cathode.

To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, an address for salvaging a defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit. As a result, a special process is not needed in forming the nonvolatile memory element. In other words, the nonvolatile memory element can be formed in a process of forming a CMOS device and an apparatus of a laser beam for programming is not needed since the programming is carried out in testing. Thus, the time necessary for programming can be shortened, and, therefore, testing costs can be reduced.

Provided is a touch panel wherein, by a simple configuration, touch electrodes formed on a transparent insulating substrate can be prevented from being visible. A touch panel (100) includes a transparent substrate (1) having an insulating property; a touch electrode (2) formed of a transparent conductive film formed in a pattern on the substrate (1); and a floating electrode (3) formed of a transparent conductive film, the floating electrode (3) being formed in an area on the substrate (1) where the touch electrode (2) is not formed. The touch electrode (2) and the floating electrode (3) respectively have slits (8, 9) so that a plurality of microareas (2a, 3a) are formed in the same.

A device for manipulating an object present in a fluid by electrokinetics is disclosed. The device comprises a substrate forming a flow chamber. The device further comprises a plurality of electrically biasable electrode structures and at least one electrically floating electrode structure.

The invention relates to a surface acoustic wave micro-fluidic drive for a chip lab pertaining to the technical field of micro-electro-mechanical system and a manufacture method thereof. The drive of the invention comprises a base, an interdigital transducer and a micro-fluidic channel, wherein the base is a 128 degrees Y-X lithium niobate single crystal, an IDT formed by the intercrossed interdigital transducer is on the base, and the micro-fluidic channel is integrated with the base. The invention uses floating electrode type unidirectional transducer structure design to realize unidirectional driving of the micro fluid, the procedure of the method is: (1) processing of the floating electrode type unidirectional transducer; (2) micro-processing of the micro-fluidic channel; (3) integration of the base and the micro-fluidic channel. The whole processing procedure of the invention can be completely made by means of semiconductor material based micro-manufacture method, having characteristics of no moving micro-parts itself and no damage to the fluid dielectric etc., the processing has advantages of reliable operation, stabilization and long service life.

A valve for a personal auditory system is described. The auditory system is capable of converting between an acoustic signal and an electrical signal. The auditory system has an acoustic pathway through which an acoustic signal may travel between a first point exterior to the auditory system and a second point interior to the auditory system. The valve includes a free floating electrode and a second electrode adjacent to free floating electrode. An electric signal that is generated by the second electrode moves the free floating electrode to substantially open or close the acoustic pathway.

A capacitive occupant sensor for detecting an occupant sitting on a seat cushion of a seat of a vehicle includes a capacitive sensor mat, a cushion member, and a floating electrode. The capacitive sensor mat is disposed in the seat cushion and has a surface. The cushion member is disposed on the surface of the capacitive sensor mat. The floating electrode is disposed on an opposite side of the cushion member from the surface of the capacitive sensor mat. A projected area of the floating electrode with respect to the surface is smaller than the surface. The floating electrode is in an electrically-floating state with respect to the capacitive sensor mat. The occupant is detected based on an occupant capacitance between the capacitive sensor mat and the occupant and a floating capacitance between the capacitive sensor mat and the floating electrode.