75 results about "Floating electrode" patented technology

A filter circuit includes: an input terminal; an output terminal; a signal path; an inductor inserted in the signal path; a first capacitor connected to an input path; a second capacitor connected to an output path; and a third capacitor connected to the first capacitor and the second capacitor and connected to a reference potential. The filter circuit includes: a substrate; an element including an inductor; a first electrode connected to an input side of the element; a second electrode connected to an output side of the element; a third electrode being a floating electrode; and a fourth electrode connected to the reference potential. The first electrode and the third electrode face each other to form the first capacitor. The second electrode and the third electrode face each other to form the second capacitor. The third electrode and the fourth electrode face each other to form the third capacitor.

An electro-crushing drill bit is to drill a wellbore, wherein the electro-crushing drill bit comprises a bit body; a ground structure coupled to the bit body; and at least one electrode coupled to a power source and the bit body, the at least one electrode positioned within the ground structure, wherein the at least one electrode comprises, a fixed plate; and a movable plate that is movable relative to the fixed plate.

The invention discloses a shield gate trench (SGT) device structure and a manufacturing method thereof. The SGT device structure comprises a substrate; the groove is formed in the substrate or the epitaxial layer on the substrate; the field dielectric layer is arranged at the bottom of the groove; the source polycrystalline silicon electrode is arranged on the field dielectric layer; the floating electrode is located above the source electrode polycrystalline silicon electrode, is isolated from the source electrode polycrystalline silicon electrode through a first insulating layer and is isolated from the side wall of the groove through a second insulating layer at the same time; the gate electrode is located above the floating electrode and is isolated from the floating electrode through a third insulating layer. The manufacturing method comprises the step of sequentially forming the groove, the field dielectric layer, the source polycrystalline silicon electrode, the first insulating layer, the floating electrode, the second insulating layer, the third insulating layer and the gate electrode. By introducing the floating electrode, the electric field distribution in the groove is effectively improved, and the electric field concentration is reduced, so that the breakdown voltage is improved, the on-resistance is reduced, and the quality factor of the device is improved.

The application discloses an SGT device and a process method thereof, which comprises the following steps: first, forming a composite layer on the surface of a semiconductor substrate; etching the semiconductor substrate to form a groove; second, depositing a first oxide layer, then depositing a first polysilicon layer; filling the groove; third, performing back etching on the first polysilicon layer to form a source electrode of the SGT device; fourth, etching the first oxide layer in the groove; fifth, forming a pad oxide layer, then depositing a second polysilicon layer and performing back etching; sixth, depositing a dielectric layer; then removing the composite layer on the surface of the semiconductor substrate; performing etching to form an upper space in the groove; seventh, forming a gate dielectric layer and a gate electrode; eighth, respectively performing ion implantation to form a well region and a source region; forming a contact hole; and after the top metal layer is made, completing subsequent processes. The SGT device disclosed by the application comprises a floating electrode forming a lateral field plate, which optimizes the electric field of a drift region and improves the breakdown voltage.

Disclosed is a wideband capacitor in which a floating electrode is provided above, below, and on both sides of a laminate in which a plurality of internal electrodes are stacked. The disclosed wideband capacitor includes a dielectric on which a laminate is provided in which a plurality of internal electrodes are stacked; a first external electrode provided on a first side surface of the dielectric; a second external electrode provided on a second side surface of the dielectric; a first floating electrode provided above the laminate; a second floating electrode provided below the laminate; a third floating electrode provided on one side of the laminate; and a fourth floating electrode provided on the other side of the laminate opposite the one side.

Provided is a liquid crystal display device capable of switching between a privacy mode and a public mode, and achieving high contrast even when displayed in the privacy mode. The liquid crystal display device of the present invention has an active matrix substrate having a first electrode, a first insulating layer, and a second electrode including a first linear electrode portion, a color filter substrate having a black matrix, a color filter, a third electrode including a plurality of second linear electrode portions, and a fourth electrode as a floating electrode, the third electrode and the fourth electrode are disposed between the black matrix and a liquid crystal layer, the second linear electrode portions extend in a second direction and overlap with portions of the black matrix extending in the second direction, the fourth electrode is disposed between the plurality of second linear electrode portions when viewed from above and overlaps with the black matrix, and a control circuit performs control to switch between applying a driving voltage to the third electrode and applying a constant voltage.

The invention discloses a line on-off mechanism with a stable on-resistance value, and relates to the technical field of lithium battery short circuit testing. The fixed electrode is fixedly connected to the mounting plate and is provided with a first test plane; the floating electrode is connected to the mounting plate in a sliding manner and is provided with a second test plane, and the second test plane is opposite to the first test plane; the mounting plate is made of an insulating material, and the fixed electrode and the floating electrode are made of a conductive material; the driving part is connected with the floating electrode and is used for driving the floating electrode to move along the axial direction, so that the second test plane is attached to or separated from the first test plane; the floating electrode is connected with the output end of the driving piece through the floating screw, so that the plane where the floating electrode is located can incline relative to the plane perpendicular to the axial direction. The circuit on-off mechanism can effectively avoid the situation that the contact resistance value is unstable due to poor machining size or insufficient installation precision.

An electro-crushing drill bit is to drill a wellbore, wherein the electro-crushing drill bit comprises a bit body; a ground structure coupled to the bit body; and at least one electrode coupled to a power source and the bit body, the at least one electrode positioned within the ground structure, wherein the at least one electrode comprises, a fixed plate; and a movable plate that is movable relative to the fixed plate.

The invention discloses a display panel and a display device, belongs to the technical field of display, and aims to at least solve the technical problem of poor standing stability of a supporting column in related technologies. The display panel comprises an array substrate, a color film substrate and a plurality of supporting columns, the array substrate and the color film substrate are oppositely arranged, the supporting columns are located between the array substrate and the color film substrate, the array substrate comprises a substrate, a plurality of transistors, floating electrodes and a passivation layer, and the transistors and the floating electrodes are located on the substrate. The passivation layer covers the plurality of transistors and the floating electrode, the passivation layer comprises a first passivation part covering the floating electrode and a second passivation part covering the transistors, and the top surface of the first passivation part is flush with the top surface of the second passivation part; wherein the supporting column is in contact with at least part of the top surface of the first passivation part and at least part of the top surface of the second passivation part.

A semiconductor device is provided. The semiconductor device includes: a substrate; the drift region and the main body region are arranged at the upper part of the substrate; a field oxide layer on the drift region of the substrate; a gate electrode vertically overlapping a portion of the drift region and a portion of the body region, the gate electrode including a first extension on the field oxide layer; a source region on a first side of the gate electrode in the body region of the substrate; a drain region on a first side of the field oxide layer within the drift region of the substrate; and a floating electrode structure on the field oxide layer, the floating electrode structure including lower electrodes spaced apart from each other, an insulating layer covering top surfaces of the lower electrodes, and upper electrodes each vertically overlapping a portion of a corresponding one of the lower electrodes.

The present disclosure relates to methods and system that provides techniques of designing amplifiers with controllable gain for electrical signals / power based on capacitively transduced Micro and / or Nano electromechanical resonators. The present disclosure provides techniques of implementing an RF voltage amplifier, a phase shift amplifier, and / or an RF power amplifier through capacitively transduced Micro / Nano electromechanical resonators. In some embodiments, the amplifier is narrow-band with the centre frequency specified by the resonant frequency of the Micro / Nano electromechanical resonators. In addition, the present disclosure provides a technique by which a set of capacitively transduced Micro / Nano electromechanical resonators are implemented as RF power amplifier with multiple inputs and multiple outputs with the output voltage being measured at electrically floating electrodes that are capacitively coupled with the resonator. These electrically-floating electrodes can also be used to sum various output signals from a resonator and signals output from various resonators.

According to the semiconductor structure and the integrated circuit provided by the invention, the resistance control electrode is arranged above the barrier layer, so that on one hand, the concentration of 2DEG can be adjusted by controlling positive and negative voltages loaded on the resistance control electrode, thereby obtaining a resistance-adjustable GaN-based integrated platform semiconductor structure; and on the other hand, the resistance control electrode can be controlled to be loaded with 0 potential or set to be a floating electrode, so that the resistance control electrode does not influence the channel resistance of the 2DEG, and the resistance control electrode can shield the influence of the upper layer wiring potential of the semiconductor structure on the 2DEG. Moreover, after tape-out of the semiconductor structure provided by the invention, the voltage loaded on the resistance control electrode can be changed in real time according to working requirements, so that the resistance value of the semiconductor structure is adjusted in real time, and the flexibility and functionality of circuit design are improved.

The application provides a touch panel and a display device, relates to the technical field of display, and is used for solving the technical problem that the touch panel is prone to touch failure and false point reporting. The touch panel comprises a substrate and a plurality of touch units. The plurality of touch units are arranged in an array on the substrate. Each touch unit comprises two first touch electrodes and a second touch electrode located between the two first touch electrodes. The two first touch electrodes are connected. An isolation gap is arranged between the first touch electrode and the second touch electrode. A floating electrode is arranged in the isolation gap. The floating electrode is insulated from the first touch electrode and the second touch electrode. The touch display panel and the display device provided by the application are used for realizing touch and display functions.

A multilayer electronic component includes: a body including a dielectric layer and an internal electrode layer and a floating electrode layer alternately disposed in a first direction with the dielectric layer interposed therebetween; a first external electrode; and a second external electrode, and the internal electrode layer may include a first electrode pattern connected to the first external electrode, and a second electrode pattern connected to the second external electrode spaced apart from the first electrode pattern, and a first heat dissipation pattern disposed between the first electrode pattern and the second electrode pattern, and the floating electrode layer may include a floating electrode pattern, and a second heat dissipation pattern spaced apart from the floating electrode pattern.

A driving circuit and a display device are provided. The driving circuit includes a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit; at least one transistor included in the driving circuit is a floating processing transistor including a floating electrode, a gate electrode, a first electrode and a second electrode; the floating electrode is arranged on the same layer with at least one of the first electrodes and the second electrode of the floating processing transistor; the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electric signal input; a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance.

A micro-electro-mechanical system (MEMS) device is disclosed that comprise a substrate, a suspended membrane suspended over the substrate between a first support and a second support, and an actuation mechanism for moving the suspended membrane relative to the substrate. The actuation mechanism has a first actuation electrode and a second actuation electrode associated with the substrate, and at least one floating electrode supported by the suspended membrane, wherein each floating electrode overlies at least a portion of both the first and second actuation electrodes and is electrically unconnected to the first and second actuation electrodes. Application of a potential difference between the actuation electrodes creates a first charge on a surface of the first actuation electrode and a second charge on a surface of the second actuation electrode, the first and second charges inducing respective first and second opposite charges on overlapping regions of the floating electrode, which causes the floating electrode and the suspended membrane to electrostatically move the towards the substrate.

The present invention aims to provide a thin-film transistor and a display device including the thin-film transistor, the thin-film transistor including: a gate electrode; an active layer disposed on the gate electrode; a drain electrode and a source electrode disposed on the active layer and spaced apart from each other; and a floating electrode disposed between the drain electrode and the source electrode, wherein the floating electrode includes a first opening portion opening toward the drain electrode and a second opening portion opening toward the source electrode.

The present disclosure provides a touch display panel and a display device. The touch display panel comprises: a base substrate, comprising a display region and a peripheral region surrounding the display region; and a touch metal layer, comprising touch patterns at least partially of which is in the display region, and touch traces in the peripheral region; wherein: each of the touch pattern comprises a plurality of pattern sub-blocks; at least one floating electrode is provided in each of the plurality of pattern sub-block; a touch pattern, of the touch patterns, with a partial missing region is regarded as a missing touch pattern; and in a pattern sub-block where the missing region is located, the at least one floating electrode is integrally and electrically connected with the pattern sub-block.

A quantum circuit and related manufacturing method are disclosed. The quantum circuit includes a vertical Josephson junction (1001) formed by a bottom electrode (810) in the first superconducting material layer, a tunnel barrier (830), and a top electrode (820) in the second superconducting material layer. A contact portion (811) and a coupling portion (812) of the bottom electrode are respectively located inside and outside the Josephson junction. The transport sub-qubit of the quantum circuit comprises a Josephson junction (101) and a shunt capacitor formed from contacts of a top electrode and a bottom electrode as shunt capacitor plates. The readout circuit is capacitively coupled to the bottom electrode through the coupling and includes a coupling head (861). The coupling portion is fitted into the recess of the coupling head. The top electrode is configured as a floating electrode and is not resistance-coupled to the first superconducting material layer.

The present invention provides an elastic wave device that suppresses transverse modes and reduces energy leakage of elastic waves. [Solution] The elastic wave apparatus comprises a piezoelectric substrate including a piezoelectric layer and an IDT electrode 9 having a plurality of first floating electrodes 11. The intersection region A has a central region F located on the central side in the propagation orthogonal direction perpendicular to the elastic wave propagation direction, and a first edge region H1 and a second edge region H2 facing each other with the central region F in between. The plurality of first floating electrodes 11 are located between the first edge region H1 and the first bus bar 13. The region located between the first edge region H1 and the first bus bar 13, where the plurality of first floating electrodes 11 are provided, is the first floating electrode formation region U1. The elastic wave apparatus further comprises a first mass addition film 8A provided in the first edge region H1 and a second mass addition film 8B provided in the first floating electrode formation region U1.

The present invention discloses a Lamb wave resonator and a method for manufacturing the same. The Lamb wave resonator comprises: a piezoelectric material layer; a first finger-shaped electrode disposed on one side of the piezoelectric material layer, the first finger-shaped electrode comprising a first main body and a plurality of first branches; a second finger-shaped electrode disposed on the one side of the piezoelectric material layer, the second finger-shaped electrode comprising a second main body and a plurality of second branches, wherein each first branch is parallel to each second branch and is arranged in an alternating manner; at least two floating electrodes disposed between each first branch and each second branch; and at least two gaps, respectively disposed at both ends of each floating electrode.

The present disclosure provides a touch substrate, a display panel and a display apparatus. The touch substrate includes: a touch insulating layer; a touch electrode, provided at a side of the touch insulating layer; and a first floating electrode, provided at a side of the touch insulating layer away from the touch electrode, where the first floating electrode and the touch electrode at least partially overlap in a thickness direction of the touch insulating layer. In the present disclosure, a signal-to-noise ratio can be improved.

The invention discloses a leakage current suppression device for a common pipeline of a flow battery, which is applied to a common electrolyte manifold of a flow battery stack, and the manifold is used for connecting a plurality of battery units in the stack with an external electrolyte storage tank; the leakage current suppression device for the common pipeline of the flow battery comprises a plurality of floating electrodes and a potential dissipation region, due to the conductivity and contact with electrolyte, when leakage current tries to pass through, the floating electrodes are like the same passive and passively responsive electrode. And according to the potential of the local electrolyte, charges can be adsorbed or released, so that an induced potential is formed on the surface of the electrolyte. Due to the existence of the induced potential, the potential distribution of the electrolyte in the area near the floating electrode can be locally changed, so that the electrolyte tends to be flat. Visually speaking, the floating electrode'breaks' the long-distance continuous potential gradient in the manifold into a plurality of small sections, and the potential gradient of each small section is remarkably reduced, so that the total leakage current is greatly reduced.

A driving circuit and a display device are provided. The driving circuit includes a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit; at least one transistor included in the driving circuit is a floating processing transistor including a floating electrode, a gate electrode, a first electrode and a second electrode; the floating electrode is arranged on the same layer with at least one of the first electrodes and the second electrode of the floating processing transistor; the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electric signal input; a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance.

The present invention relates to a multifunctional physiotherapy device configured to deliver therapeutic treatments to facial and body skin surfaces. The device comprises a housing defining an application surface, a pair of floating electrodes mounted on elastic members, and a circuit operable to provide microcurrent stimulation. The floating structure enables the electrodes to conform to varying skin contours while simultaneously functioning as charging contacts when engaged with a corresponding interface, thereby combining therapy and charging in a shared element. In certain embodiments, the device incorporates a removable cap containing a power storage unit and output electrodes, enabling portable charging and controlled alignment with the input electrodes. Additional therapeutic features such as temperature regulation, phototherapy, or liquid dispensing may be integrated, thereby providing a compact, ergonomic, and versatile physiotherapy system suitable for skincare and wellness applications across different body areas.

The application discloses a display panel, a driving method and a display device. The display panel comprises a first substrate and a second substrate which are arranged in a cell, and a liquid crystal layer arranged between the first substrate and the second substrate. A plurality of transmittance adjustment modules are arranged on the light-emitting direction of the display panel. The display panel is divided into a plurality of display areas along the scanning line direction of the display panel. The plurality of transmittance adjustment modules are arranged one by one corresponding to the plurality of display areas of the display panel. The transmittance adjustment module comprises a transmittance change layer and a floating electrode which are arranged in a stack. The floating electrode is used for changing the transmittance of the transmittance change layer. The transmittance adjustment module comprising the floating electrode and the transmittance change layer is arranged on the light-emitting surface of the display panel. The floating electrode changes the transmittance of the transmittance change layer according to different received voltages. The transmittance of the transmittance adjustment module is freely switched from large to small according to the voltage of the floating electrode, so as to realize the display of the anti-peeping mode and the sharing mode.

A display substrate (10, 20) and a display device. In a display substrate (10, 20), a first opening region (202A) includes a first opening (201A) and a first opening peripheral region (203A) surrounding the first opening (201A); a display region (101, 201) at least partially surrounds the first opening region (202A), and includes a first display region (1011, 2011) located on a first side of the first opening region (202A); and a second display region (1012, 2012) located on a second side of the first opening region (202A); the first side and the second side are opposite to each other in a first direction (R1), and the first display region (1011, 2011) and the second display region (1012, 2012) include a plurality of pixels; a plurality of first signal lines (23) are configured to provide a first display signal to the plurality of pixels, and extend along the first direction (R1) and pass through the first display region (1011, 2011) and the second display region (1012, 2012); a plurality of The second signal line (24) is configured to provide a second display signal to a plurality of pixels, and extends along a second direction (R2) intersecting the first direction (R1). Parts of the plurality of second signal lines (24) pass through the first opening peripheral area (203A) along the second direction (R2). Each second signal line (24) in the plurality of second signal lines (24) includes a longitudinal winding portion (C1C2) located in the first opening peripheral area (203A); and a longitudinal winding portion (C1C2) extending along the second direction (R2) intersecting the first opening peripheral area (203A). The first floating electrodes (41, 42) are arranged in the same layer as the edge longitudinal winding portions (2401, 2402) and are located on a side of the edge longitudinal winding portions (2401, 2402) close to the first opening (201A).

The semiconductor device of the embodiment is provided with a cell region and a terminal region, and includes a first electrode, a semiconductor portion provided on the first electrode, an insulating film provided on the semiconductor portion in the terminal region, a plurality of second electrodes provided on the insulating film, arranged in a first direction from the center of the semiconductor portion toward the outer periphery and separated from each other when viewed from above, a first floating electrode provided in the insulating film, overlapping a gap between an adjacent pair of the second electrodes of the plurality of second electrodes when viewed from above, and facing one of the pair of the second electrodes with the insulating film interposed therebetween, and a second floating electrode provided in the insulating film in a manner separated from the first floating electrode, overlapping the first floating electrode within the gap when viewed from above, the portion overlapping the first floating electrode being positioned below the portion in the first floating electrode overlapping the gap, and facing the other of the pair of the second electrodes with the insulating film interposed therebetween.

A thin film transistor includes: a gate electrode; an active layer disposed on the gate electrode; a drain electrode and a source electrode disposed on the active layer and spaced apart from each other; and a floating electrode disposed between the drain electrode and the source electrode. The floating electrode includes a first opening portion open toward the drain electrode and a second opening portion open toward the source electrode. The first opening portion is configured to be opened toward the drain electrode, and the second opening portion is configured to be opened toward the source electrode.