The application discloses an SGT device and a process method thereof, which comprises the following steps: first, forming a composite layer on the surface of a
semiconductor substrate;
etching the
semiconductor substrate to form a groove; second, depositing a first
oxide layer, then depositing a first polysilicon layer; filling the groove; third, performing back
etching on the first polysilicon layer to form a source
electrode of the SGT device; fourth,
etching the first
oxide layer in the groove; fifth, forming a pad
oxide layer, then depositing a second polysilicon layer and performing back etching; sixth, depositing a
dielectric layer; then removing the composite layer on the surface of the
semiconductor substrate; performing etching to form an upper space in the groove; seventh, forming a
gate dielectric layer and a gate
electrode; eighth, respectively performing
ion implantation to form a well region and a source region; forming a
contact hole; and after the top
metal layer is made, completing subsequent processes. The SGT device disclosed by the application comprises a
floating electrode forming a
lateral field plate, which optimizes the
electric field of a drift region and improves the
breakdown voltage.