102 results about "Floating electrode" patented technology

The invention relates to the technical field of camera shooting, and discloses a ball type anti-shake motor and electronic equipment. The ball type anti-shake motor comprises a circuit board arranged on the side wall of a base, a first detection unit comprises a first emitting polar plate and a first receiving polar plate which are arranged on the circuit board, and a first floating polar plate arranged on the side face of a first mover, and the first detection unit is used for detecting the movement condition of the first mover in the focusing direction; the second detection unit comprises a second floating polar plate connected with the first floating polar plate and a second receiving polar plate arranged on the second mover, the second floating polar plate and the second receiving polar plate are oppositely arranged, and the second detection unit is used for detecting the movement condition of the second mover in the shaking direction. An elastic sheet structure is electrically connected with the circuit board, and the elastic sheet structure is used for limiting the second mover in the focusing direction; and the second receiving polar plate is electrically connected with the elastic sheet structure so as to realize the connection between the second detection unit and the circuit board.

An electronic device includes: a housing configured to provide a space capable of receiving an object to be heated; a first electrode and a second electrode for forming an electric field in the space in which the object to be heated is received; and a floating electrode disposed between the first electrode and the second electrode, the floating electrode being positioned inside the object to be heated when the object to be heated is disposed in the space.

A filter circuit includes: an input terminal; an output terminal; a signal path; an inductor inserted in the signal path; a first capacitor connected to an input path; a second capacitor connected to an output path; and a third capacitor connected to the first capacitor and the second capacitor and connected to a reference potential. The filter circuit includes: a substrate; an element including an inductor; a first electrode connected to an input side of the element; a second electrode connected to an output side of the element; a third electrode being a floating electrode; and a fourth electrode connected to the reference potential. The first electrode and the third electrode face each other to form the first capacitor. The second electrode and the third electrode face each other to form the second capacitor. The third electrode and the fourth electrode face each other to form the third capacitor.

An electro-crushing drill bit is to drill a wellbore, wherein the electro-crushing drill bit comprises a bit body; a ground structure coupled to the bit body; and at least one electrode coupled to a power source and the bit body, the at least one electrode positioned within the ground structure, wherein the at least one electrode comprises, a fixed plate; and a movable plate that is movable relative to the fixed plate.

The invention discloses a shield gate trench (SGT) device structure and a manufacturing method thereof. The SGT device structure comprises a substrate; the groove is formed in the substrate or the epitaxial layer on the substrate; the field dielectric layer is arranged at the bottom of the groove; the source polycrystalline silicon electrode is arranged on the field dielectric layer; the floating electrode is located above the source electrode polycrystalline silicon electrode, is isolated from the source electrode polycrystalline silicon electrode through a first insulating layer and is isolated from the side wall of the groove through a second insulating layer at the same time; the gate electrode is located above the floating electrode and is isolated from the floating electrode through a third insulating layer. The manufacturing method comprises the step of sequentially forming the groove, the field dielectric layer, the source polycrystalline silicon electrode, the first insulating layer, the floating electrode, the second insulating layer, the third insulating layer and the gate electrode. By introducing the floating electrode, the electric field distribution in the groove is effectively improved, and the electric field concentration is reduced, so that the breakdown voltage is improved, the on-resistance is reduced, and the quality factor of the device is improved.

The application discloses an SGT device and a process method thereof, which comprises the following steps: first, forming a composite layer on the surface of a semiconductor substrate; etching the semiconductor substrate to form a groove; second, depositing a first oxide layer, then depositing a first polysilicon layer; filling the groove; third, performing back etching on the first polysilicon layer to form a source electrode of the SGT device; fourth, etching the first oxide layer in the groove; fifth, forming a pad oxide layer, then depositing a second polysilicon layer and performing back etching; sixth, depositing a dielectric layer; then removing the composite layer on the surface of the semiconductor substrate; performing etching to form an upper space in the groove; seventh, forming a gate dielectric layer and a gate electrode; eighth, respectively performing ion implantation to form a well region and a source region; forming a contact hole; and after the top metal layer is made, completing subsequent processes. The SGT device disclosed by the application comprises a floating electrode forming a lateral field plate, which optimizes the electric field of a drift region and improves the breakdown voltage.

Disclosed is a wideband capacitor in which a floating electrode is provided above, below, and on both sides of a laminate in which a plurality of internal electrodes are stacked. The disclosed wideband capacitor includes a dielectric on which a laminate is provided in which a plurality of internal electrodes are stacked; a first external electrode provided on a first side surface of the dielectric; a second external electrode provided on a second side surface of the dielectric; a first floating electrode provided above the laminate; a second floating electrode provided below the laminate; a third floating electrode provided on one side of the laminate; and a fourth floating electrode provided on the other side of the laminate opposite the one side.

Provided is a liquid crystal display device capable of switching between a privacy mode and a public mode, and achieving high contrast even when displayed in the privacy mode. The liquid crystal display device of the present invention has an active matrix substrate having a first electrode, a first insulating layer, and a second electrode including a first linear electrode portion, a color filter substrate having a black matrix, a color filter, a third electrode including a plurality of second linear electrode portions, and a fourth electrode as a floating electrode, the third electrode and the fourth electrode are disposed between the black matrix and a liquid crystal layer, the second linear electrode portions extend in a second direction and overlap with portions of the black matrix extending in the second direction, the fourth electrode is disposed between the plurality of second linear electrode portions when viewed from above and overlaps with the black matrix, and a control circuit performs control to switch between applying a driving voltage to the third electrode and applying a constant voltage.

The invention provides a telescopic charging device and a control method thereof, a power receiving device, equipment and a medium. The device comprises a floating electrode assembly which is used for being connected with the power receiving device for charging after extending out of the telescopic charging device; the linear motion mechanism is used for stretching and retracting the floating electrode assembly and comprises a power part, a guide mechanism and an electrode assembly mounting part; the guide mechanism is used for stabilizing stretching of the floating electrode assembly, the first side of the electrode assembly mounting component is connected with the guide mechanism, and the second side of the electrode assembly mounting component is connected with the floating electrode assembly; the power part comprises a push rod and a plurality of rolling bodies, and the push rod is connected with the first side of the electrode assembly mounting part and used for keeping the telescopic position of the floating electrode assembly through static friction force between the push rod and the rolling bodies after power provided by the power part disappears; the non-self-locking maintaining function is achieved through static friction force, the floating electrode assembly retracts in a follow-up mode in the extending state, and structural damage caused by external force is avoided.

The invention discloses a line on-off mechanism with a stable on-resistance value, and relates to the technical field of lithium battery short circuit testing. The fixed electrode is fixedly connected to the mounting plate and is provided with a first test plane; the floating electrode is connected to the mounting plate in a sliding manner and is provided with a second test plane, and the second test plane is opposite to the first test plane; the mounting plate is made of an insulating material, and the fixed electrode and the floating electrode are made of a conductive material; the driving part is connected with the floating electrode and is used for driving the floating electrode to move along the axial direction, so that the second test plane is attached to or separated from the first test plane; the floating electrode is connected with the output end of the driving piece through the floating screw, so that the plane where the floating electrode is located can incline relative to the plane perpendicular to the axial direction. The circuit on-off mechanism can effectively avoid the situation that the contact resistance value is unstable due to poor machining size or insufficient installation precision.

An electro-crushing drill bit is to drill a wellbore, wherein the electro-crushing drill bit comprises a bit body; a ground structure coupled to the bit body; and at least one electrode coupled to a power source and the bit body, the at least one electrode positioned within the ground structure, wherein the at least one electrode comprises, a fixed plate; and a movable plate that is movable relative to the fixed plate.

The present disclosure provides a multilayer electronic component including a body including a dielectric layer, an inner electrode layer, and a floating electrode layer, and an outer electrode, the inner electrode layer includes a first electrode pattern connected to a third surface of the body and a second electrode pattern spaced apart from the first electrode pattern in a third direction and connected to a fourth surface of the body, and the floating electrode layer includes a third electrode pattern spaced apart from the third surface and the fourth surface, a fourth electrode pattern spaced apart from the third electrode pattern and connected to the third surface, and a fifth electrode pattern spaced apart from the third electrode pattern and connected to the fourth surface. The multilayer electronic component may allow an electric field formed between an inner electrode layer and a floating electrode layer in a first direction to be also formed in a second direction and a third direction, which may counteract stress formed in a stress concentration region, thereby improving reliability including breakdown voltage (BDV) characteristics of the multilayer electronic component.

The present application provides an anti-shake motor, which can improve the accuracy of real-time position detection of the mover. In the anti-shake motor, a first mover is arranged above a base, and a second mover is arranged above the first mover. The circuit board includes a first electrode plate and two second electrode plates; a first part of the first floating electrode plate and the first electrode plate form a first sub-capacitor; a fourth part of the second floating electrode plate and a second part of the first floating electrode plate form a second sub-capacitor; an eighth part of the third floating electrode plate and a fifth part of the second floating electrode plate form a third sub-capacitor, and a seventh part of the third floating electrode plate and the second electrode plate form a fourth sub-capacitor; the capacitance between the first electrode plate and any one of the second electrode plates is formed by the series connection of the first sub-capacitor, the second sub-capacitor, the third sub-capacitor and the fourth sub-capacitor. During the reciprocating movement of the second mover relative to the first mover along the second direction, the capacitance values of the first sub-capacitor, the second sub-capacitor and the fourth sub-capacitor remain unchanged, and the capacitance value of the third sub-capacitor changes.

A multilayer electronic component according to an example embodiment of the present disclosure may allow an electric field formed in a first direction between an internal electrode layer and a floating electrode layer to be formed in a second direction or a third direction to offset stress formed in a stress concentration region, thereby improving reliability, including BDV characteristics, of the multilayer electronic component.

The invention discloses a display panel and a display device, belongs to the technical field of display, and aims to at least solve the technical problem of poor standing stability of a supporting column in related technologies. The display panel comprises an array substrate, a color film substrate and a plurality of supporting columns, the array substrate and the color film substrate are oppositely arranged, the supporting columns are located between the array substrate and the color film substrate, the array substrate comprises a substrate, a plurality of transistors, floating electrodes and a passivation layer, and the transistors and the floating electrodes are located on the substrate. The passivation layer covers the plurality of transistors and the floating electrode, the passivation layer comprises a first passivation part covering the floating electrode and a second passivation part covering the transistors, and the top surface of the first passivation part is flush with the top surface of the second passivation part; wherein the supporting column is in contact with at least part of the top surface of the first passivation part and at least part of the top surface of the second passivation part.

The present invention relates to the field of imaging technology, and discloses a ball-type anti-shake motor and an electronic device. In the ball-type anti-shake motor of the present invention, a transmitting electrode plate is arranged on a circuit board, a first floating electrode plate is arranged on a first mover, and a second floating electrode plate opposite to the first floating electrode plate is arranged on a second mover; a first receiving electrode plate is further arranged on the circuit board, and the first receiving electrode plate is arranged opposite to the first floating electrode plate; a first capacitor is formed between the first receiving electrode plate and the first floating electrode plate, a second capacitor is formed between the first floating electrode plate and the second floating electrode plate, a third capacitor is formed between the second floating electrode plate and the housing opposite to each other, and a fourth capacitor is formed between the transmitting electrode plate and the first floating electrode plate; a capacitive detection unit in the form of a combination of series capacitors and parallel capacitors is constructed by the above-mentioned several capacitors, and the detection result of the capacitive detection unit is changed by the change in the magnitude of the capacitance value in parallel, thereby improving the sensitivity of position detection.

A semiconductor device is provided. The semiconductor device includes: a substrate; the drift region and the main body region are arranged at the upper part of the substrate; a field oxide layer on the drift region of the substrate; a gate electrode vertically overlapping a portion of the drift region and a portion of the body region, the gate electrode including a first extension on the field oxide layer; a source region on a first side of the gate electrode in the body region of the substrate; a drain region on a first side of the field oxide layer within the drift region of the substrate; and a floating electrode structure on the field oxide layer, the floating electrode structure including lower electrodes spaced apart from each other, an insulating layer covering top surfaces of the lower electrodes, and upper electrodes each vertically overlapping a portion of a corresponding one of the lower electrodes.

The present disclosure relates to methods and system that provides techniques of designing amplifiers with controllable gain for electrical signals / power based on capacitively transduced Micro and / or Nano electromechanical resonators. The present disclosure provides techniques of implementing an RF voltage amplifier, a phase shift amplifier, and / or an RF power amplifier through capacitively transduced Micro / Nano electromechanical resonators. In some embodiments, the amplifier is narrow-band with the centre frequency specified by the resonant frequency of the Micro / Nano electromechanical resonators. In addition, the present disclosure provides a technique by which a set of capacitively transduced Micro / Nano electromechanical resonators are implemented as RF power amplifier with multiple inputs and multiple outputs with the output voltage being measured at electrically floating electrodes that are capacitively coupled with the resonator. These electrically-floating electrodes can also be used to sum various output signals from a resonator and signals output from various resonators.

According to the semiconductor structure and the integrated circuit provided by the invention, the resistance control electrode is arranged above the barrier layer, so that on one hand, the concentration of 2DEG can be adjusted by controlling positive and negative voltages loaded on the resistance control electrode, thereby obtaining a resistance-adjustable GaN-based integrated platform semiconductor structure; and on the other hand, the resistance control electrode can be controlled to be loaded with 0 potential or set to be a floating electrode, so that the resistance control electrode does not influence the channel resistance of the 2DEG, and the resistance control electrode can shield the influence of the upper layer wiring potential of the semiconductor structure on the 2DEG. Moreover, after tape-out of the semiconductor structure provided by the invention, the voltage loaded on the resistance control electrode can be changed in real time according to working requirements, so that the resistance value of the semiconductor structure is adjusted in real time, and the flexibility and functionality of circuit design are improved.

The application provides a touch panel and a display device, relates to the technical field of display, and is used for solving the technical problem that the touch panel is prone to touch failure and false point reporting. The touch panel comprises a substrate and a plurality of touch units. The plurality of touch units are arranged in an array on the substrate. Each touch unit comprises two first touch electrodes and a second touch electrode located between the two first touch electrodes. The two first touch electrodes are connected. An isolation gap is arranged between the first touch electrode and the second touch electrode. A floating electrode is arranged in the isolation gap. The floating electrode is insulated from the first touch electrode and the second touch electrode. The touch display panel and the display device provided by the application are used for realizing touch and display functions.

In a multilayer electronic component according to an example embodiment of the present disclosure, inner electrode layers and floating electrode layers are alternately arranged in a first direction with a dielectric layer interposed therebetween, the inner electrode layers including first and second electrode patterns respectively connected to outer electrodes and spaced apart from each other in a second direction, the floating electrode layer may include a third electrode pattern, the third electrode pattern includes a first main portion overlapping at least a portion of the first electrode pattern in the first direction, a second main portion overlapping at least a portion of the second electrode pattern in the first direction; and a pair of connection portions connecting the first main portion and the second main portion and spaced apart from each other in the third direction, with the spacing portion interposed between the pair of connection portions, when a maximum width of the third electrode pattern in the third direction is defined as W1 and a maximum width of the spacer portion in the third direction is defined as W2, W2 / W1 may satisfy 0.08 or more and 0.92 or less.

The invention discloses a small pixel array detector with a Schottky floating electrode, and relates to the technical field of semiconductor devices, the small pixel array detector comprises a detector main body, the top surface of the detector main body is provided with an anode and a floating electrode, and the bottom surface of the detector main body is provided with a cathode; wherein the anode is an array pixel electrode; the floating electrode comprises edge grids, common grids and guard rings, the edge grids are located around the pixel electrodes of the array, the guard rings are located around the pixel electrodes of the array, and the common grids are located between the guard rings. According to the small pixel array detector with the Schottky floating electrode, carriers can be effectively prevented from being collected by metal electrodes except the anode pixel electrode, and charge loss is reduced; different from a conventional protection ring electrode structure, the Schottky floating electrode structure can form a surface transverse electric field without pressurization, so that injection of carriers is reduced, drifting of electrons towards an anode pixel electrode is promoted, and charge collection efficiency is improved.

The utility model discloses a welding fixture for a terminal in a shell, which relates to the technical field of terminal welding and comprises a shell positioning component and a terminal positioning block. A positioning groove is formed in the shell positioning part and used for embedding the shell, a first welding point is arranged at the lower end of the shell, and when the shell is embedded into the positioning groove, the working centers of the floating electrode and the fixed electrode coincide with the first welding point; the terminal positioning block is used for being horizontally positioned and embedded into the inner cavity, a terminal fixing groove and a welding window are formed in the terminal positioning block, one end of the terminal is horizontally positioned and embedded into the terminal fixing groove, the other end of the terminal extends to the welding window, and the welding window exposes the other end of the terminal below the floating electrode; the terminal located in the welding window is provided with a second welding point, when the terminal positioning block is embedded into the inner cavity, the second welding point and the first welding point are aligned and attached, and the floating electrode and the fixed electrode jointly weld the first welding point and the second welding point. According to the utility model, the welding difficulty of the terminals in the shell is reduced.

To suppress an electrostrictive crack generation of a lamination type election component.SOLUTION: A lamination type election component according to an embodiment of the present invention, comprises a third electrode pattern including: a first main part 123a in which a floating electrode layer is overlapped to a first direction with at least one part of a first electrode pattern; a second main part 123b which is overlapped to at least one part of a second electrode pattern to the first direction; and a pair of coupling parts 123d coupling the first and second main parts and arranged apart from each other in a third direction with a space part 123c therebetween. When the maximum width of the third electrode pattern to the third direction is W1 and the maximum width of the space part to the third direction is W2, W2 / W1 satisfies 0.08 or more and 0.92 or less.SELECTED DRAWING: Figure 7

A multilayer electronic component includes: a body including a dielectric layer and an internal electrode layer and a floating electrode layer alternately disposed in a first direction with the dielectric layer interposed therebetween; a first external electrode; and a second external electrode, and the internal electrode layer may include a first electrode pattern connected to the first external electrode, and a second electrode pattern connected to the second external electrode spaced apart from the first electrode pattern, and a first heat dissipation pattern disposed between the first electrode pattern and the second electrode pattern, and the floating electrode layer may include a floating electrode pattern, and a second heat dissipation pattern spaced apart from the floating electrode pattern.

A driving circuit and a display device are provided. The driving circuit includes a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit; at least one transistor included in the driving circuit is a floating processing transistor including a floating electrode, a gate electrode, a first electrode and a second electrode; the floating electrode is arranged on the same layer with at least one of the first electrodes and the second electrode of the floating processing transistor; the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electric signal input; a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance.

A micro-electro-mechanical system (MEMS) device is disclosed that comprise a substrate, a suspended membrane suspended over the substrate between a first support and a second support, and an actuation mechanism for moving the suspended membrane relative to the substrate. The actuation mechanism has a first actuation electrode and a second actuation electrode associated with the substrate, and at least one floating electrode supported by the suspended membrane, wherein each floating electrode overlies at least a portion of both the first and second actuation electrodes and is electrically unconnected to the first and second actuation electrodes. Application of a potential difference between the actuation electrodes creates a first charge on a surface of the first actuation electrode and a second charge on a surface of the second actuation electrode, the first and second charges inducing respective first and second opposite charges on overlapping regions of the floating electrode, which causes the floating electrode and the suspended membrane to electrostatically move the towards the substrate.

A multilayer electronic component of the present disclosure may allow an electric field formed in a first direction between an internal electrode layer and a floating electrode layer to also be formed in a second direction or a third direction, which may offset the stress formed in a stress concentration region, thereby improving the reliability, including the breakdown voltage (BDV) characteristics, of the laminated electronic component.

The present invention aims to provide a thin-film transistor and a display device including the thin-film transistor, the thin-film transistor including: a gate electrode; an active layer disposed on the gate electrode; a drain electrode and a source electrode disposed on the active layer and spaced apart from each other; and a floating electrode disposed between the drain electrode and the source electrode, wherein the floating electrode includes a first opening portion opening toward the drain electrode and a second opening portion opening toward the source electrode.