101results about "Electrostatic/electro-adhesion relays" patented technology

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

A device for switching a differential signal includes an input port, a first output port, a second output port, a first micro electromechanical system (MEMS) switch, and a second MEMS switch. The first and second MEMS switches selectively couple the input port to either the first output port or the second output port. The differential input port is separated into two single-ended paths. One single-ended path is switched through the first MEMS switch, and the other single-ended path is switched through the second MEMS switch. The single-ended paths are spatially matched with respect to length and orientation, and are at least partially distributed through at least two layers of electrical conductors, with adjacent layers of electrical conductors separated by electrically insulating layers.

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

The invention provides a radio frequency MEMS switch and a preparation method thereof, and relates to the technical field of radio frequency MEMS switches. A substrate of the radio frequency MEMS switch comprises a first surface and a second surface which are opposite to each other, a Peltier refrigeration module is embedded in the substrate, the Peltier refrigeration module comprises a refrigeration end and a heat dissipation end, and the refrigeration end is closer to the first surface compared with the heat dissipation end. The driving electrode is arranged on the first surface, and the first electrode and the second electrode are also arranged on the first surface. The cantilever beam is electrically connected with the first electrode, the cantilever beam is arranged on the side, away from the substrate, of the driving electrode, and the cantilever beam is configured to be electrically connected with the second electrode under driving of the driving electrode. The orthographic projection of the joint of the cantilever beam and the first electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, and / or the orthographic projection of the joint of the cantilever beam and the second electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, in-situ active cooling can be carried out, and thermal creep aggravation is restrained.

Provided is an in-plane sliding parallel capacitive radio frequency, RF, switch based on a superlubric structure. The RF switch includes a substrate, first to third drive components, an insulating layer, and a sliding component. Where a drive voltage is applied between the first and second drive components, the sliding component slides to the top of the first and second drive components under the action of a horizontal force; in this case, relatively large capacitance is formed between the first and second drive components and the sliding component, a RF signal is almost completely reflected, and the transmission is cut off. Where the drive voltage is applied between the second and third drive components, the sliding component slides to the top of the second and third drive components under the action of a horizontal force; in this case, no facing area between a first drive electrode and the sliding component exists in a vertical direction, the capacitance is rather small, and the RF signal may be transmitted basically without loss.

A micro-electromechanical systems (MEMS) switch (100, 200, 300, 400, 500, 600) and method (800) of fabricating the same including at least one comb drive (101 and 103, 201 and 203 and 205, 301 and 303, 401 and 403 and 405, 501 and 503 and 505) having a first input (113, 219, 307, 415, 515) and a second input (107, 215, 313, 417, 517), at least one conductive beam (105, 207, 209, 305, 407, 409, 507, 509, 701, 705, 709, 713, 717, 721) connected across the at least one comb drive, a first contact (109, 211, 311, 411, 511), and a second contact (111, 213, 309, 413, 513), wherein no voltage difference between the first input and the second input does not result in any movement of the MEMS switch, and wherein a voltage difference between the first input and the second input causes an electrostatic force to be generated that causes the at least one conductive beam to move in a direction orthogonal to a direction of the electrostatic force.

The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

The invention relates to a micromechanical switch having a substrate (10) with a main plane of extension (x, y), having a first electrical contact (11) and a second electrical contact (12), having a first deflectable micromechanical switch part (30) with a first contact bridge (31) for switching a first circuit (15), by means of which first contact bridge the first contact can be brought into electrical contact with the second contact, the invention relates to a first, second, third and fourth electrical contacts (21, 22), having a second deflectable micromechanical switching part (40), which has a second contact bridge (41) for switching a second circuit (25), by means of which the third contact can be brought into electrical contact with the fourth contact, the first, second, third and fourth electrical contacts being arranged on a substrate, wherein the first switching component (30) and the second switching component (40) are formed in the micromechanical functional layer (100) above the substrate and can be deflected in a direction perpendicular to a main extension plane (x, y) of the substrate.

A vibration-driven energy harvester includes: a base; a movable assembly that includes a first movable electrode and a second movable electrode; a first fixed electrode disposed so as to face opposite the first movable electrode; a second fixed electrode disposed so as to face opposite the second movable electrode; an elastic support member having a fixed end fixed to the base, the elastic support member supporting the movable assembly; a first electret formed at least at one of the first movable electrode and the first fixed electrode; and a second electret formed at least at one of the second movable electrode and the second fixed electrode, wherein: a gap distance between a front end of the second movable electrode and a facing surface of the second fixed electrode facing the front end of the second movable electrode is different from a gap distance between a front end of the first movable electrode and a facing surface of the first electrode facing the front end of the first movable electrode.

A micromechanical electrically actuable switch. The switch has a first relay with a first operating contact, and a second relay with a second operating contact. The first operating contact and the second operating contact are arranged in series in a common load path. The switch further includes a detection device for detecting a switching state of the first operating contact, and a control circuit for registering the switching state of the first operating contact and for switching on the electrically actuable switch. The control circuit is configured, upon a switch-on signal, to switch on the first relay and the second relay in a first case, in which the switching state of the first operating contact is “open”, and to not switch on at least the second relay in a second case, in which the switching state of the first operating contact is “closed”.

Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

The invention relates to anti-blocking enhancement of ruthenium contacts. A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam is to move to vary the capacitance of the device. After a majority of the device build-up has occurred, the sacrificial material is removed to release the beam within the MEMS device cavity. Thereafter, the exposed ruthenium contact is exposed to fluorine to either dope the exposed ruthenium and reduce surface adhesion, form a fluorinated self-assembled monolayer on the exposed ruthenium surface, deposit a nanopassivation film on the exposed ruthenium, or alter the surface roughness of the ruthenium. Due to fluorine treatment, there is a low resistance, durable contact, and the contact is less susceptible to adhesion events.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

The disclosed embodiments relate to a flexible MEMS switch, comprising a MEMS body and an external package, the package comprising a first flexible cover and a second flexible cover, the first and second flexible cover being disposed on opposite sides of the MEMS body, respectively, with a first cavity formed between the first flexible cover and the MEMS body, and a second cavity formed between the second flexible cover and the MEMS body. The disclosed embodiments also relate to a method for manufacturing the flexible MEMS switch.

The invention relates to the technical field of radio frequency microwave devices, in particular to a W-band broadband RF MEMS multi-pole multi-throw switch, which comprises a silicon substrate, a plurality of input and output ports and an MEMS cantilever beam switch unit, the MEMS cantilever beam switch unit is provided with a driving electrode, and by applying voltage to the driving electrode, the W-band broadband RF MEMS multi-pole multi-throw switch is switched on and switched off. And connection and disconnection of a radio frequency signal path between the corresponding input port and the output port can be controlled. Deformation of the cantilever beam is controlled through electrostatic driving, on-off of a radio frequency signal path is achieved, the driving mode has the advantages of being low in power consumption, high in speed and easy to integrate, compared with a common single-pole structure, more complex signal routing can be achieved in a compact unit, the system integration degree and function flexibility are improved, and the cost is reduced. Through a horizontal swing type structure and a vertical lifting type structure, interference-free crossing is realized by utilizing a groove structure, the high-frequency parasitic effect is remarkably reduced, and the switch ensures the transmission quality of millimeter wave signals in a W wave band.

A beam for a microelectromechanical system (MEMS) switch may include a first layer including a nickel alloy and a second layer on at least a portion of the first layer.

A MEMS switch, comprising a substrate, at least one signal input line, at least one signal output line, at least one contact zone formed on a contact zone base integral with the substrate, and a contact membrane held by at least one anchoring base integral with the substrate, wherein for each contact zone, the contact membrane constitutes a first entity, the contact base constitutes a second entity and the at least one anchoring base constitutes a third entity, and at least two entities from among the first entity, the second entity and the third entity are deformable, each by an independent actuating means, in order to move the contact membrane towards or away from the contact zone.

A system for protecting a MEMS relay switch system that controls electric current to a load includes a parallel resonant circuit in series with the MEMS relay switch system. The parallel resonant circuit includes an auxiliary switch in series with a capacitor configured to be pre-charged by a voltage source, and an inductor in parallel with the auxiliary switch and the capacitor. The inductor is in series with the MEMS relay switch system. A method includes receiving a signal, activating an auxiliary switch, determining if the received signal is a turn OFF or a turn ON signal, and depending on the received signal, setting a time delay within a resonant half cycle of a parallel resonant pulse circuit, turning off the auxiliary switch, and pre-charging a capacitor of the parallel resonant pulse circuit.

Devices with spark gap structures for monitoring or protecting against electrical overload (EOS) and associated methods are disclosed. In one aspect, a vertical spark gap device comprises a substrate with a horizontal main surface, a first conductive layer, and a second conductive layer, each extending over the substrate and substantially parallel to the horizontal main surface, while separated in a vertical direction intersecting the horizontal main surface. One of the first and second conductive layers is electrically connected to a first voltage node, and the other of the first and second conductive layers is electrically connected to a second voltage node.The first and second conductive layers serve as one or more arc electrode pairs and have overlapping sections configured to generate one or more arc discharges in response to an EOS voltage signal received between the first and second voltage nodes, generally extending in the vertical direction.

The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

A micromechanical resoswitch design and operation mode harnesses stored mechanical resonance energy to reduce its required switching energy and improve achievable bit rate in the example to 8 kbps, which is at least 12 times faster than without pre-energization. The use of stored energy is instrumental to achieving switching times 8 times faster than previously demonstrated, breaking the Q-driven sensitivity-bit rate tradeoff often assumed for these devices and overcoming long-held (incorrect) assumptions. The resoswitch adapts to the required bit rate, adjusting its switching time to accommodate a fast or slow rate, greatly expanding the application space.

The invention provides a radio frequency (RF) micro electro mechanical system (MEMS) switch. The switch comprises a substrate; a first signal conductor on the substrate; a ground conductor supported on the substrate on either side of the first signal conductor; and a MEMS bridge, at least one end of which is mechanically connected to the substrate through at least one anchor point, the MEMS bridge comprising a variable capacitor region disposed over the first signal conductor, the variable capacitor region comprising a first dielectric layer and a first conductive layer, the first conductive layer is located on a surface of the first dielectric layer facing the substrate and is divided into at least a first longitudinal conductive portion and a second longitudinal conductive portion, the first longitudinal conductive portion and the second longitudinal conductive portion being spaced apart in a direction perpendicular to a longitudinal length of the MEMS bridge, wherein the substrate comprises one or more pull-down substrate conductors, and the MEMS bridge comprises one or more actuatable conductors located between the anchor point and the variable capacitor region and disposed above the one or more pull-down substrate conductors, wherein at least one of the one or more actuatable conductors includes an embedded portion extending longitudinally along the MEMS bridge and between the first and second longitudinal conductive portions.

The application relates to the technical field of radio frequency microwave devices, in particular to a W-waveband wide-frequency RF MEMS multi-blade multi-pole switch which comprises a silicon substrate, a plurality of input / output ports and a MEMS cantilever beam switch unit, the MEMS cantilever beam switch unit is provided with a driving electrode, and the communication and disconnection of the radio frequency signal path between the corresponding input port and the output port can be controlled by applying voltage to the driving electrode. The application realizes the on-off of the radio frequency signal path by electrostatic driving control of the deformation of the cantilever beam, and the driving mode has the advantages of low power consumption, high speed and easy integration. Compared with the common single-blade structure, the application can realize more complex signal routing in a compact unit, improves the system integration and functional flexibility, realizes interference-free crossing by using the slot structure through the horizontal swing type structure and the vertical lifting type structure, significantly reduces the high-frequency parasitic effect, and ensures the transmission quality of the millimeter wave signal in the W waveband.

The invention provides a radio frequency MEMS switch and a preparation method thereof, and relates to the technical field of radio frequency MEMS switches. A substrate of the radio frequency MEMS switch comprises a first surface and a second surface which are opposite to each other, a Peltier refrigeration module is embedded in the substrate, the Peltier refrigeration module comprises a refrigeration end and a heat dissipation end, and the refrigeration end is closer to the first surface compared with the heat dissipation end. The driving electrode is arranged on the first surface, and the first electrode and the second electrode are also arranged on the first surface. The cantilever beam is electrically connected with the first electrode, the cantilever beam is arranged on the side, away from the substrate, of the driving electrode, and the cantilever beam is configured to be electrically connected with the second electrode under driving of the driving electrode. The orthographic projection of the joint of the cantilever beam and the first electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, and / or the orthographic projection of the joint of the cantilever beam and the second electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, in-situ active cooling can be carried out, and thermal creep aggravation is restrained.

A microelectromechanical system (MEMS) switch implemented with a coplanar waveguide. The MEMS switch includes an input terminal, an output terminal. The MEMS switch includes a beam extending between the input terminal and the output terminal. The beam includes a first edge and a second edge coupled to a gate of the MEMS switch. The beam includes a third edge proximate the input terminal. The first edge includes a first set of finger contacts proximate a first corner of the beam and a second set of finger contacts proximate a second corner of the beam. The beam includes a fourth edge proximate the output terminal, the fourth edge opposing the third edge. The MEMS switch has a first anchor coupled to the input terminal. The first anchor includes a first segment extending from a region proximate the input terminal to a region overlying the first set of finger contacts.

A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

The invention provides an MEMS switch, a driving method thereof and electronic equipment. The MEMS switch comprises a substrate, an anchor point, a first signal line, a first driving electrode, a switch beam and a second signal line. Wherein the anchor point is arranged on one side of the substrate. The first signal lines and the first driving electrodes are located on the same side, where the anchor points are located, of the substrate and are sequentially and alternately arranged on the two sides of the anchor points in the direction parallel to the surface of the substrate. The second signal line is arranged at one end of the anchor point close to the substrate. The switch beam is connected with the anchor point and arranged at one end, far away from the substrate, of the anchor point, the two ends of the switch beam are suspended, the orthographic projection of the switch beam on the surface of the substrate is at least partially overlapped with the orthographic projection of the first signal line on the surface of the substrate and the orthographic projection of the first driving electrode on the surface of the substrate respectively, and the structure of the MEMS switch improves the reliability of the MEMS switch.