1206results about "Electrostatic/electro-adhesion relays" patented technology

Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

A single pole, double throw micro-electromechanical (MEM) switch. The inventive switch includes a first contact providing a first terminal of the switch. A second contact provides a second terminal of said switch. A cantilever beam provides a third terminal of the switch. The inventive switch includes a system for electrostatically pushing or pulling the beam to disengage the first contact and engage the second contact. In an illustrative implementation, the system for electrostatically operating the switch includes a first charge storage structure on the beam, a second charge storage structure on the switch, and an electrical supply for creating an electrical charge on the first and the second charge storage structures. The first and second charge storage structures are effective to create a force of repulsion therebetween on the application of an electrical charge thereto. The "pull" electrostatic force closes the MEM switch. The "push" force aids in opening the switch. The "push" capability is the result of the use of like (same polarity) electrostatic charges on the control surfaces. The like charges provide an electrostatic repulsion force during the switch opening process.

A bistable electrostatic actuator with pneumatic or liquid coupling. The actuator has enclosed metallic electrodes. It can be used for a microvalve or micropump. The actuator has buckled membrane sections in pairs and curved substrate electrodes, locally associated with said membrane sections.

A micro-electro-mechanical (MEMS) switch (10, 110) has an electrode (22, 122) covered by a dielectric layer (23, 123), and has a flexible conductive membrane (31, 131) which moves between positions spaced from and engaging the dielectric layer. At least one of the membrane and dielectric layer has a textured surface (138) that engages the other thereof in the actuated position. The textured surface reduces the area of physical contact through which electric charge from the membrane can tunnel into and become trapped within the dielectric layer. This reduces the amount of trapped charge that could act to latch the membrane in its actuated position, which in turn effects a significant increase in the operational lifetime of the switch.

Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second structure having at least one output electrode and positioning said second structure in relation to the first structure and the conductive article such that the output electrode of the first structure is opposite the output electrode of the second structure and such that a portion of the conductive article is positioned therebetween. At least one signal electrode is provided in electrical communication with the conductive article having at least one nanotube, and at least one control electrode is provided in relation to the conductive article such that the conductive electrode may control the conductive article to form a channel between the sginal electrode and at least one of the output electrodes. The first and second structures each include a respective second output electrode and wherein the second electrodes are positioned opposite each other with the conductive article positioned therebetween. The control electrode and the second control electrode includes an insulator layer on a surface facing the conductive article.

It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

PCT No. PCT/EP97/06174 Sec. 371 Date May 11, 1999 Sec. 102(e) Date May 11, 1999 PCT Filed Nov. 6, 1997 PCT Pub. No. WO98/21734 PCT Pub. Date May 22, 1998A method of producing a micromechanical relay comprises the steps of providing a substrate including a conductive fixed electrode in or on said substrate. A sacrificial layer and a conductive layer are applied and the conductive layer is structured so as to define a beam structure as a movable counterelectrode opposite said fixed electrode. A contact area is applied, the conductive layer extending between an anchoring region and the contact area and being insulated from said contact area. Subsequently, the sacrificial layer is removed by means of etching so as to produce the beam structure comprising a movable area and an area secured to the anchoring region on the substrate. The beam structure is defined such that etch access openings in said beam structure are structured such that the size of the area covered by the etch access openings used for etching the sacrificial layer increases from the area of the beam structure secured to the substrate to the movable area of the beam structure so that the etching of the sacrificial layer is controlled in such a way that the portion of the sacrificial layer arranged below the movable area of the beam structure is etched faster than the portion of the sacrificial layer arranged in the area of the anchoring region.

A nonvolatile memory cell comprises a conductive cantilever beam having a free end in a first charge state, a first FET having a conductive gate in a second charge state and a pull-in electrode adapted to bring the cantilever beam into electrical contact with the gate to effect a charge state change in the gate. A pull-in electrode input is connected to the electrode, a cantilever input is connected to the cantilever, a column select input is connected to the first FET and a row select input is connected to the first FET. The nonvolatile memory cell is selected by signals applied to the row select input and the column select input. The cell also includes a second FET connected between the cantilever beam and the cantilever input for controlling the passage of signals from the cantilever input to the cantilever beam and a third FET connected between the pull-in electrode and the pull-in electrode input for controlling the passage of signals from the pull-in electrode input to the electrode. The second FET and third FET have gates connected to the row select input. The row select input turns on the second FET and the third FET to allow the passage of signals from the pull-in electrode input to the pull-in electrode and from the cantilever input to the cantilever beam when the nonvolatile memory cell is selected.

Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electromechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.

A switch includes at least two distributed constant lines (2a, 2b) disposed close to each other, a movable element (11) arranged above the distributed constant lines so as to oppose these distributed constant lines and connecting the distributed constant lines to each other in a high-frequency manner upon contacting the distributed constant lines, and a driving means (13) for displacing the movable element by an electrostatic force to bring the movable element into contact with the distributed constant lines. The movable element has a projection (52a, 52b) formed by notching at least one end of an edge of the movable element which is located on at least one distributed constant line side. In this projection, a width (a) serving as a length in a direction parallel to the widthwise direction of the distributed constant lines is smaller than a width (W) of each of the distributed constant lines.

Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

A low cost, scalable backplane for black and white or color optical displays comprises a multi-membrane plastic structure on which is printed or deposited row and column drivers to form a matrix of micro electromechanical (MEM) switches. Each switch controls the state of a pixel in the optical display device. Critical to successful long-term operation, the backplane includes the controlled application of voltages to each switch so that the display functions correctly and display life is maximized. The MEM switches include a substantially non-pliable membrane and a substantially flexible membrane both of which include electrodes that when energized will create electrostatic forces that attracts the flexible membrane to the non-pliable membrane. The MEM switches are manufactured in an array with a pitch that provides a sufficient number of switches to drive an optical display device and each switch may be latched to eliminate the need to constantly refresh the device.

Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch—e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.