Non-volatile
field effect devices and circuits using same. A non-volatile
field effect device includes a source, drain
and gate with a field-modulatable channel between the source and drain. Each of the source, drain,
and gate have a corresponding terminal. An electromechanically-deflectable,
nanotube switching element is electrically positioned between one of the source, drain
and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The
nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a
dielectric surface for contact with the
nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any
voltage level from ground to supply
voltage, and wherein the two control terminals are stimulated at any
voltage level from ground to a switching
threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release
electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set
electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile
closed state.