159results about "Electrostatic/electro-adhesion relays" patented technology

A system includes a circuit protection device (CPD) having an input coupled to an aircraft power generator and an output coupled to an aircraft electrical load. A shorting switch is coupled to the input of the CPD. The shorting switch, when closed, provides a fault current path that returns to the aircraft power generator and avoids passing through the CPD and the aircraft electrical load. A controller, based upon the voltage measurements from one or more voltage sensors and current measurements from at least one current sensor selectively opens and closes one or more of the CPD and the shorting switch.

A micro-electrical-mechanical-system (MEMS) switching device including a first MEMS switch having a first and second terminal, and a second MEMS switch having a third and fourth terminal. The device also includes first and second input conductors, and first and second output conductors. The first input conductor electrically connects the second terminal to the third terminal. The second input conductor electrically connects an input port to the first input conductor. The first output conductor electrically connects a first output port to the first terminal. The second output conductor electrically connects a second output port to the fourth terminal. A first path from the input port to the first output port, and a second path from the input port to the second output port, have substantially identical electrical characteristics.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

The invention provides an MEMS (Micro Electro Mechanical System) three-state inertia switch and a preparation method thereof. In the inertia switch, a first glass cover plate is provided with a first closed electrode and a pull-in polar plate, and the upper and lower surfaces of a mass block with an interlayer silicon structure are respectively provided with a first closed electrode and a second closed electrode; the second glass cover plate is provided with a second closed electrode; in an initial state, the first closing electrode is closed, and the pull-in polar plate is not in contact with the mass block and is locked by static electricity; when inertia force borne by the three-state inertia switch reaches inertia overload force, the mass block is separated from electrostatic adsorption and moves towards the second glass cover plate to enter an intermediate state, and the processing circuit outputs second voltage; when the inertia force is increased, the second closed electrode contacts and enters a closed state, and the processing circuit outputs a third voltage. The structure of the three-state inertia switch can be manufactured by adopting an MEMS (Micro Electro Mechanical System) process, and the sensor is small in size; the three-state jump is not limited by the compression of the spring and can occur instantaneously, so that more requirements for detecting external overload are met.

A device for switching a differential signal includes an input port, a first output port, a second output port, a first micro electromechanical system (MEMS) switch, and a second MEMS switch. The first and second MEMS switches selectively couple the input port to either the first output port or the second output port. The differential input port is separated into two single-ended paths. One single-ended path is switched through the first MEMS switch, and the other single-ended path is switched through the second MEMS switch. The single-ended paths are spatially matched with respect to length and orientation, and are at least partially distributed through at least two layers of electrical conductors, with adjacent layers of electrical conductors separated by electrically insulating layers.

Various embodiments of the utility model relate to a semiconductor device. The semiconductor device comprises a sensing electrode, a first dielectric layer, a second dielectric layer, an actuating diaphragm and a third dielectric layer. The sensing electrode is located above the substrate and between the plurality of isolation trenches. A plurality of portions of the first dielectric layer are on the sensing electrode. A portion of the second dielectric layer is on the sensing electrode and on the portions of the first dielectric layer. The actuating diaphragm is over the second dielectric layer, wherein the actuating diaphragm is spaced apart from the second dielectric layer by a cavity. The third dielectric layer is located on the actuating diaphragm, the third dielectric layer is located between the actuating diaphragm and the cavity, and the thickness of a part of the second dielectric layer is larger than that of the third dielectric layer.

The invention discloses a terahertz MEMS composite membrane switch based on a glass substrate, and belongs to the field of terahertz wireless communication equipment. The MEMS switch is of a three-dimensional structure and sequentially comprises a metal ground, a glass substrate, a coplanar waveguide signal transmission line, a silicon nitride dielectric layer and an MEMS composite film from bottom to top. The MEMS composite film is equivalent to a clamped beam structure, and an anchor area of the MEMS composite film is connected with a signal ground of the CPW; the composite film is composed of a gold film and a silicon dioxide film, the composite film, a silicon nitride dielectric layer below and a CPW signal line form a parallel plate capacitor, bias voltage is loaded through a direct-current voltage signal transmission line connected with an anchor area, the height of the MEMS composite film is changed, then the plate capacitance value is changed, and switching between the on state and the off state of a transmission signal is achieved. The MEMS switch of the composite film has the advantages of low insertion loss and high isolation in terahertz frequency band application, and can be applied to radio frequency devices such as phase shifters, attenuators, reconfigurable filters and the like.

High voltage microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The switch can include control electrodes, disposed on a surface of the substrate, for electrically controlling the beam. The anchor is asymmetrically positioned with respect to the two ends of the beam and is electrically connected to a middle electrode. A stopper serves as a pivot point during actuation of the switch to reduce the mechanical stress on the hinges.

An apparatus for switching differential signals includes an input port, a first output port, a second output port, a first micro-electro-mechanical system (MEMS) switch, and a second MEMS switch. The first and second MEMS switches selectively couple the input port to the first output port or the second output port. The differential input port is divided into two single-ended paths. One single-ended path is switched through the first MEMS switch and the other single-ended path is switched through the second MEMS switch. The single-ended paths are spatially matched with respect to length and orientation and are at least partially distributed by at least two electrically conductive layers, adjacent electrically conductive layers being separated by electrically insulating layers.

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

To provide a microelectromechanical system (MEMS) switch apparatus.SOLUTION: An MEMS switch apparatus for handling input voltages higher than a standoff voltage of each MEMS switch in the MEMS switch apparatus may comprise at least one pair of MEMS switches. Each pair of MEMS switches may comprise a first MEMS switch and a second MEMS switch electrically coupled to the first MEMS switch at a midpoint. The first and second MEMS switches may be arranged in a back-to-back configuration. Each pair of MEMS switches may further comprise an input electrically coupled to the first MEMS switch, an output electrically coupled to the second MEMS switch, one or more input components electrically coupled across the first MEMS switch from the input to the midpoint, and one or more output components electrically coupled across the second MEMS switch from the midpoint to the output.SELECTED DRAWING: Figure 2

A micro-electrical-mechanical-system (MEMS) switching device including a first MEMS switch having a first and second terminal, and a second MEMS switch having a third and fourth terminal. The device also includes first and second input conductors, and first and second output conductors. The first input conductor electrically connects the second terminal to the third terminal. The second input conductor electrically connects an input port to the first input conductor. The first output conductor electrically connects a first output port to the first terminal. The second output conductor electrically connects a second output port to the fourth terminal. A first path from the input port to the first output port, and a second path from the input port to the second output port, have substantially identical electrical characteristics.

Circuit breakers based on micro-electromechanical systems (MEMS) switches are described. A high voltage MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control voltage applied on one of the control electrodes with respect to a first reference voltage puts one of the two ends of the beam in electric contact with one of two contact electrodes of the MEMS teeter-totter switch to electrical connected two terminals of a circuit breaker. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage. A MEMS teeter-totter switch network comprises a plurality of MEMS teeter-totter switches configured to switch high voltage and high current between the two terminals of the circuit breaker.

The invention provides a radio frequency MEMS switch and a preparation method thereof, and relates to the technical field of radio frequency MEMS switches. A substrate of the radio frequency MEMS switch comprises a first surface and a second surface which are opposite to each other, a Peltier refrigeration module is embedded in the substrate, the Peltier refrigeration module comprises a refrigeration end and a heat dissipation end, and the refrigeration end is closer to the first surface compared with the heat dissipation end. The driving electrode is arranged on the first surface, and the first electrode and the second electrode are also arranged on the first surface. The cantilever beam is electrically connected with the first electrode, the cantilever beam is arranged on the side, away from the substrate, of the driving electrode, and the cantilever beam is configured to be electrically connected with the second electrode under driving of the driving electrode. The orthographic projection of the joint of the cantilever beam and the first electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, and / or the orthographic projection of the joint of the cantilever beam and the second electrode on the substrate is overlapped with the area where the Peltier refrigeration module is located, in-situ active cooling can be carried out, and thermal creep aggravation is restrained.

Provided is an in-plane sliding parallel capacitive radio frequency, RF, switch based on a superlubric structure. The RF switch includes a substrate, first to third drive components, an insulating layer, and a sliding component. Where a drive voltage is applied between the first and second drive components, the sliding component slides to the top of the first and second drive components under the action of a horizontal force; in this case, relatively large capacitance is formed between the first and second drive components and the sliding component, a RF signal is almost completely reflected, and the transmission is cut off. Where the drive voltage is applied between the second and third drive components, the sliding component slides to the top of the second and third drive components under the action of a horizontal force; in this case, no facing area between a first drive electrode and the sliding component exists in a vertical direction, the capacitance is rather small, and the RF signal may be transmitted basically without loss.

A micro-electromechanical systems (MEMS) switch (100, 200, 300, 400, 500, 600) and method (800) of fabricating the same including at least one comb drive (101 and 103, 201 and 203 and 205, 301 and 303, 401 and 403 and 405, 501 and 503 and 505) having a first input (113, 219, 307, 415, 515) and a second input (107, 215, 313, 417, 517), at least one conductive beam (105, 207, 209, 305, 407, 409, 507, 509, 701, 705, 709, 713, 717, 721) connected across the at least one comb drive, a first contact (109, 211, 311, 411, 511), and a second contact (111, 213, 309, 413, 513), wherein no voltage difference between the first input and the second input does not result in any movement of the MEMS switch, and wherein a voltage difference between the first input and the second input causes an electrostatic force to be generated that causes the at least one conductive beam to move in a direction orthogonal to a direction of the electrostatic force.

The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

The invention relates to a micromechanical switch having a substrate (10) with a main plane of extension (x, y), having a first electrical contact (11) and a second electrical contact (12), having a first deflectable micromechanical switch part (30) with a first contact bridge (31) for switching a first circuit (15), by means of which first contact bridge the first contact can be brought into electrical contact with the second contact, the invention relates to a first, second, third and fourth electrical contacts (21, 22), having a second deflectable micromechanical switching part (40), which has a second contact bridge (41) for switching a second circuit (25), by means of which the third contact can be brought into electrical contact with the fourth contact, the first, second, third and fourth electrical contacts being arranged on a substrate, wherein the first switching component (30) and the second switching component (40) are formed in the micromechanical functional layer (100) above the substrate and can be deflected in a direction perpendicular to a main extension plane (x, y) of the substrate.

A vibration-driven energy harvester includes: a base; a movable assembly that includes a first movable electrode and a second movable electrode; a first fixed electrode disposed so as to face opposite the first movable electrode; a second fixed electrode disposed so as to face opposite the second movable electrode; an elastic support member having a fixed end fixed to the base, the elastic support member supporting the movable assembly; a first electret formed at least at one of the first movable electrode and the first fixed electrode; and a second electret formed at least at one of the second movable electrode and the second fixed electrode, wherein: a gap distance between a front end of the second movable electrode and a facing surface of the second fixed electrode facing the front end of the second movable electrode is different from a gap distance between a front end of the first movable electrode and a facing surface of the first electrode facing the front end of the first movable electrode.

A micromechanical electrically actuable switch. The switch has a first relay with a first operating contact, and a second relay with a second operating contact. The first operating contact and the second operating contact are arranged in series in a common load path. The switch further includes a detection device for detecting a switching state of the first operating contact, and a control circuit for registering the switching state of the first operating contact and for switching on the electrically actuable switch. The control circuit is configured, upon a switch-on signal, to switch on the first relay and the second relay in a first case, in which the switching state of the first operating contact is “open”, and to not switch on at least the second relay in a second case, in which the switching state of the first operating contact is “closed”.

Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

The invention relates to anti-blocking enhancement of ruthenium contacts. A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam is to move to vary the capacitance of the device. After a majority of the device build-up has occurred, the sacrificial material is removed to release the beam within the MEMS device cavity. Thereafter, the exposed ruthenium contact is exposed to fluorine to either dope the exposed ruthenium and reduce surface adhesion, form a fluorinated self-assembled monolayer on the exposed ruthenium surface, deposit a nanopassivation film on the exposed ruthenium, or alter the surface roughness of the ruthenium. Due to fluorine treatment, there is a low resistance, durable contact, and the contact is less susceptible to adhesion events.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

An apparatus includes a semiconductor structure (704) having a cavity (720). The apparatus also includes a first electrical terminal (730) on a first cavity side (720a), a second electrical terminal (732) on a second cavity side (720b), and the second electrical terminal includes an extension (738) overlapping a portion of the cavity. The apparatus also includes a bendable beam (710) extending from the first cavity side and overlapping at least a portion of the extension. The apparatus also includes an actuator (740) in a periphery of the beam, the actuator configured to generate a fringe electric field (750) that moves one end of the beam toward the extension in a direction different from the fringe electric field and bends the beam.

The disclosed embodiments relate to a flexible MEMS switch, comprising a MEMS body and an external package, the package comprising a first flexible cover and a second flexible cover, the first and second flexible cover being disposed on opposite sides of the MEMS body, respectively, with a first cavity formed between the first flexible cover and the MEMS body, and a second cavity formed between the second flexible cover and the MEMS body. The disclosed embodiments also relate to a method for manufacturing the flexible MEMS switch.

The invention relates to the technical field of radio frequency microwave devices, in particular to a W-band broadband RF MEMS multi-pole multi-throw switch, which comprises a silicon substrate, a plurality of input and output ports and an MEMS cantilever beam switch unit, the MEMS cantilever beam switch unit is provided with a driving electrode, and by applying voltage to the driving electrode, the W-band broadband RF MEMS multi-pole multi-throw switch is switched on and switched off. And connection and disconnection of a radio frequency signal path between the corresponding input port and the output port can be controlled. Deformation of the cantilever beam is controlled through electrostatic driving, on-off of a radio frequency signal path is achieved, the driving mode has the advantages of being low in power consumption, high in speed and easy to integrate, compared with a common single-pole structure, more complex signal routing can be achieved in a compact unit, the system integration degree and function flexibility are improved, and the cost is reduced. Through a horizontal swing type structure and a vertical lifting type structure, interference-free crossing is realized by utilizing a groove structure, the high-frequency parasitic effect is remarkably reduced, and the switch ensures the transmission quality of millimeter wave signals in a W wave band.

A beam for a microelectromechanical system (MEMS) switch may include a first layer including a nickel alloy and a second layer on at least a portion of the first layer.

A MEMS switch, comprising a substrate, at least one signal input line, at least one signal output line, at least one contact zone formed on a contact zone base integral with the substrate, and a contact membrane held by at least one anchoring base integral with the substrate, wherein for each contact zone, the contact membrane constitutes a first entity, the contact base constitutes a second entity and the at least one anchoring base constitutes a third entity, and at least two entities from among the first entity, the second entity and the third entity are deformable, each by an independent actuating means, in order to move the contact membrane towards or away from the contact zone.