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51results about How to "Small product" patented technology

Method for manufacturing a micromechanical relay

PCT No. PCT/EP97/06174 Sec. 371 Date May 11, 1999 Sec. 102(e) Date May 11, 1999 PCT Filed Nov. 6, 1997 PCT Pub. No. WO98/21734 PCT Pub. Date May 22, 1998A method of producing a micromechanical relay comprises the steps of providing a substrate including a conductive fixed electrode in or on said substrate. A sacrificial layer and a conductive layer are applied and the conductive layer is structured so as to define a beam structure as a movable counterelectrode opposite said fixed electrode. A contact area is applied, the conductive layer extending between an anchoring region and the contact area and being insulated from said contact area. Subsequently, the sacrificial layer is removed by means of etching so as to produce the beam structure comprising a movable area and an area secured to the anchoring region on the substrate. The beam structure is defined such that etch access openings in said beam structure are structured such that the size of the area covered by the etch access openings used for etching the sacrificial layer increases from the area of the beam structure secured to the substrate to the movable area of the beam structure so that the etching of the sacrificial layer is controlled in such a way that the portion of the sacrificial layer arranged below the movable area of the beam structure is etched faster than the portion of the sacrificial layer arranged in the area of the anchoring region.
Owner:FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV

Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions

Methods and apparatuses are disclosed that can introduce deliberate semiconductor film variation during semiconductor manufacturing to compensate for radial processing differences, to determine optimal device characteristics, or produce small production runs. The present invention radially varies the thickness and/or composition of a semiconductor film to compensate for a known radial variation in the semiconductor film that is caused by performing a subsequent semiconductor processing step on the semiconductor film.Additionally, methods and apparatuses are disclosed that can introduce deliberate semiconductor film variations to determine optimal device characteristics or produce small production runs. Introducing semiconductor film variations, such as thickness variations and/or composition variations, allow different devices to be made. A number of devices may be made having variations in semiconductor film. Because the semiconductor film has variations between the devices, device characteristics of the devices should be different. By measuring the device characteristics of devices having the variations, the device with the optimum device characteristic may be chosen, thereby indicating the appropriate semiconductor film thickness and/or composition. Moreover, small production runs of the same devices, having different characteristics, will allow the end user to select the appropriate devices for their needs.
Owner:IBM CORP

Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small production runs

Methods and apparatuses are disclosed that can introduce deliberate semiconductor film variation during semiconductor manufacturing to compensate for radial processing differences, to determine optimal device characteristics, or produce small production runs. The present invention radially varies the thickness and / or composition of a semiconductor film to compensate for a known radial variation in the semiconductor film that is caused by performing a subsequent semiconductor processing step on the semiconductor film. Additionally, methods and apparatuses are disclosed that can introduce deliberate semiconductor film variations to determine optimal device characteristics or produce small production runs. Introducing semiconductor film variations, such as thickness variations and / or composition variations, allow different devices to be made. A number of devices may be made having variations in semiconductor film. Because the semiconductor film has variations between the devices, device characteristics of the devices should be different. By measuring the device characteristics of devices having the variations, the device with the optimum device characteristic may be chosen, thereby indicating the appropriate semiconductor film thickness and / or composition. Moreover, small production runs of the same devices, having different characteristics, will allow the end user to select the appropriate devices for their needs.
Owner:IBM CORP

Shear bar

The invention relates to a shear bar (20), in particular for a forage harvester or another agricultural or silvicultural machine, having a carrier (21) that comprises a cutting region (30); a plurality of cutting elements (31) being set alongside one another in the cutting region (30); the cutting elements (31) comprising a partial edge and at least some of the partial edges forming a cutting edge (32) that is embodied to form, with a knife bar, a cutting engagement for the material to be shredded; the cutting edge (32) forming a transition between a cutting surface (32.1) that is constituted by the cutting elements (31) and extends transversely to the cutting direction, and an exposed surface (32.2) that extends substantially in a cutting direction and indirectly or directly adjoins the cutting edge (32). A shear bar of this kind can be configured to be break-resistant with little complexity in terms of parts and manufacture if provision is made that an infeed element (34), which is embodied as a sintered part made of hard material having an infeed bevel (34.6) profiled on in the sintering process, is provided on or in the row of cutting elements (31); the infeed bevel (34.6) being carried over indirectly or directly into the cutting edge (32); and the infeed bevel (34.6) being arranged at a tilt with respect to the cutting edge (32) in such a way that it is arranged with a setback with respect to the exposed surface (32.2) and toward the cutting surface (32.1).
Owner:BETEK
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