37810 results about "Reducing agent" patented technology

Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

The present invention comprises methods and compositions for antimicrobial silver compositions comprising silver nanoparticles. The present invention further comprises compositions for preparing silver nanoparticles comprising at least one stabilizing agent, one or more silver compounds, at least one reducing agent and a solvent. In one aspect, the stabilizing agent comprises a surfactant or a polymer. The polymer may comprise polymers such as polyacrylamides, polyurethanes, and polyamides. In one aspect, the silver compound comprises a salt comprising a silver cation and an anion. The anion may comprise saccharinate derivatives, long chain fatty acids, and alkyl dicarboxylates. The methods of the present invention comprise treating devices with the silver nanoparticle compositions, including, but not limited to, such devices as woven wound care materials, catheters, patient care devices, and collagen matrices. The present invention further comprises treatment of humans and animals wacr6ith the antimicrobial devices described herein.

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

The invention relates to a preparation method of a polymer/graphene composite material through in situ reduction, which is characterized by comprising the following steps: adopting ultrasonic wave or grinding to evenly disperse the graphite oxide prepared by a Hummers method into polymer dispersion; introducing reducing agent into the polymer dispersion for in situ reduction, enabling the graphite oxide to be reduced into the grapheme so as to obtain stable polymer/graphene composite emulsion; carrying out demulsification, agglomeration and drying to obtain the composite polymer/grapheme composite master batch; adding the dried polymer/grapheme composite master batch and various assistants into the polymeric matrix according to a certain ratio; and carrying out double-roller mixing, vulcanization, melt extrusion or injection molding to obtain the polymer/graphene composite material with excellent physical and mechanical properties.

The present invention comprises methods and compositions comprising metal nanoparticles. The invention comprises metal nanoparticles and surfaces treated with a metal nanoparticle coating. The present invention further comprises compositions for preparing nanoparticles comprising at least one stabilizing agent, one or more metal compounds, at least one reducing agent and a solvent. In one aspect, the stabilizing agent comprises a surfactant or a polymer. The polymer may comprise polymers such as polyacrylamides, polyurethanes, and polyamides. In one aspect, the metal compound comprises a salt comprising a metal cation and an anion. The anion may comprise saccharinate derivatives, long chain fatty acids, and alkyl dicarboxylates.

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

Processes for forming conductive features from one or more inks and conductive features formed from the processes. In one aspect, the process includes a step of applying a first ink comprising a metal precursor to at least a portion of a first substrate to form an at least partially coated substrate. In a second step, the first ink is contacted with a reducing agent, optionally derived from a second ink, under conditions effective to reduce the metal in the metal precursor to its elemental form.

Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

Cementitious compositions and methods for making same, in which the cementitious compositions include 35-60 wt. % cementitious reactive powder (also termed Portland cement-based binder), 2-10 wt. % expanded and chemically coated perlite filler, 20-40 wt. % water, entrained air, and optional additives such as water reducing agents, chemical set-accelerators, and chemical set-retarders. In addition, the lightweight cementitious compositions may contain 0-25 wt. % on a wet basis secondary fillers such as expanded clay, shale aggregate, and pumice.

A process comprising: reacting a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles.

Metal powder Ta and/or Nb, with or without one or metals from the group Ta, Nb, Ti, Mo, W, V, Zr and Hf, is made in a fine powder form by reduction of metal oxide by contact with a gaseous reducing agent, preferably an alkaline earth metal, to near complete reduction, leaching, further deoxidation and agglomeration, the powder so produced being sinterable to capacitor anode form and processable to other usages.

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.

Various methods for decreasing the amount of nitrogen oxides released to the atmosphere as a component of combustion gas mixtures are provided. The methods specifically provide for the removal of nitric oxide and nitrogen dioxide (NOx) from gas mixtures emitted from stationary combustion systems. In particular, methods for improving efficiency of nitrogen oxide reduction from combustion systems include injecting metal-containing compounds into the main combustion zone and/or the reburning zone of a combustion system. The metal containing compounds react with active combustion species, and these reactions change radical concentrations and significantly improve NOx conversion to molecular nitrogen. The metal-containing additives can be injected with the main fuel, in the main combustion zone, with secondary or reburning fuel addition, or at several locations in the main combustion zone and reburning zone. Optionally, nitrogenous reducing agents and/or overfire air can be injected downstream to further increase NOx reduction.

The invention is directed to enhanced methods for detecting an analyte of interest in situ, by immunoassay, or by hybridization comprising binding an enzyme-labeled conjugate molecule to an analyte of interest in the presence of a redox-inactive reductive species and a soluble metal ion. The enzyme catalyzes the conversion of the inactive reductive species to an active reducing agent, which in turn reduces the metal ion to a metal atom thereby providing an enhanced means of detecting the analyte via metal deposition.

A method of thermally processing a tobacco material is provided, the method including the steps of (i) mixing a tobacco material, water, and an additive selected from the group consisting of lysine, glycine, histidine, alanine, methionine, glutamic acid, aspartic acid, proline, phenylalanine, valine, arginine, di- and trivalent cations, asparaginase, saccharides, phenolic compounds, reducing agents, compounds having a free thiol group, oxidizing agents, oxidation catalysts, plant extracts, and combinations thereof, to form a moist tobacco mixture; (ii) heating the moist tobacco mixture at a temperature of at least about 60° C. to form a heat-treated tobacco mixture; and (iii) incorporating the heat-treated tobacco mixture into a tobacco product. Heat-treated tobacco composition prepared according to the method are also provided, such as heat-treated smokeless tobacco composition comprising a tobacco material, water, flavorant, binder, and filler, the heat-treated smokeless tobacco composition having an acrylamide content of less than about 2000 ppb.