44 results about "Tungsten nitride" patented technology

This application relates to a silicon-carbon composite anode material, its preparation method, and its application. The silicon-carbon composite anode material has a core-shell structure, comprising, from the inside out: a core, which is a silicon-carbon composite matrix; an intermediate shell, which is a rigid tungsten nitride layer covering the outer surface of the silicon-carbon composite matrix; and an outer shell, which is a flexible conductive carbon layer covering the outer surface of the intermediate shell. This application proposes using tungsten nitride (W2N) as the inner rigid coating material to form a high-strength, conductive W2N protective layer on the surface of the silicon-carbon composite material, and further coating it with a flexible conductive carbon layer, constructing a "hard shell-soft layer" dual-layer synergistic protection structure, thereby systematically alleviating the key technical challenges of the aforementioned silicon-based anodes.

The invention discloses a surface treatment process for improving the high-temperature wear resistance of a stirring head. The surface treatment process comprises the following steps: 1) cleaning a stirring needle and the bottom of a shaft shoulder for three times by using distilled water, and blow-drying for plating; (2) dipping a plating pen in the composite brush plating solution to carry out electroplating brush treatment on the stirring needle and the bottom surface of the shaft shoulder, wherein the thickness of a plating layer is not less than 80 microns; the composite brush plating solution comprises a nickel-cobalt plating solution, tungsten nitride, chromium nitride and composite powder, wherein the composite powder comprises metal titanium powder, tin powder and chromium powder; by adopting the composite brush plating technology, the stirring needle and the shaft shoulder bottom of the stirring head are subjected to local surface treatment, the hardness of the stirring needle and the shaft shoulder bottom subjected to brush plating is obviously improved, the room-temperature and high-temperature wear resistance is obviously improved, the service life of the stirring head is prolonged, and the production cost of an enterprise is reduced.

Embodiments of the disclosure provided herein include systems and methods for forming low resistivity tungsten features in a semiconductor device manufacturing scheme using growth suppression techniques. The system includes a processing chamber, a gas delivery system, and a system controller configured to expose at least one opening formed in a multi-tier structure of a substrate to a tungsten-containing precursor and a nucleation reducing agent. The tungsten-containing precursor and the nucleation reducing agent are alternated cyclically to form a nucleation layer within the at least one opening of the substrate. The system controller is further configured to expose the at least one opening of the substrate to a nitrogen-containing gas, a tungsten-containing gas, and a gapfill reducing agent gas to produce a non-uniform tungsten nitride passivation layer in the at least one opening.

The invention discloses a preparation method of a nano tungsten nitride powder material, and belongs to the technical field of preparation of transition metal nitride materials. The preparation method comprises the following steps: by taking tungsten powder as a tungsten source and sodium azide and melamine as nitrogen sources, grinding and mixing the tungsten powder and the sodium azide according to a mass ratio of 5: 1, and tabletting the mixture and the melamine by using a hydraulic machine respectively, so as to obtain the composite material. The method comprises the following steps: preparing a cylindrical shape by wrapping a cylindrical sheet formed by pressing a mixture of tungsten powder and sodium azide with two pieces of melamine according to the size of a synthesis cavity, putting the cylindrical raw material into a heating container, putting the heating container into the synthesis cavity, keeping the temperature and pressure for 10 minutes at the pressure of 3.0-5.0 GPa and the temperature of 1500-1800 DEG C, cooling and relieving the pressure, and finally putting a sample into diluted hydrochloric acid for cleaning, and preparing the nano tungsten nitride powdery material. The technological process is simple, and the preparation period and the sintering time are shortened; air pollution and resource waste are avoided; the prepared nano powdery material has the characteristics of high purity, easiness in impurity removal and the like.

The invention discloses a tungsten nitride / carbon composite material as well as a preparation method and application thereof. The preparation method adopts a molten salt synthesis method and takes tungsten trioxide as a tungsten source, thiourea as a nitrogen source and a sulfur source, melamine resin as a carbon source and sodium chloride as a molten salt template. Under the room temperature condition, powder obtained through ball milling is subjected to high-temperature roasting through a tubular furnace to prepare the tungsten nitride and carbon composite material, and the pore channel structure and the heteroatom content of the material can be adjusted by controlling the proportion of precursors. The product yield of the method reaches 16%, and the material can be used as the water electrolysis hydrogen production catalyst, and is a very ideal method for preparing the water electrolysis hydrogen production catalyst.

To prevent a silicon carbonitride film from being damaged when a hard mask is removed.SOLUTION: A hard mask removal method includes applying a hydrogen ashing treatment and then applying etching treatment with ClF3 gas on a wafer in which an upper surface of an SiCN film of an insulating layer on which a pattern is formed is covered with a hard mask, a surface of the pattern and a surface of the hard mask are covered with a CF-based deposit, and the hard mask is formed of at least one of tungsten silicide (WSi) and tungsten silicide nitride (WSiN).SELECTED DRAWING: Figure 2

The invention discloses an easy-to-demould concrete mould and a preparation method thereof, and relates to the field of moulds, the easy-to-demould concrete mould comprises a mould body and a demoulding layer used for separating the mould body from concrete, and the demoulding layer is composed of at least three of titanium nitride, chromium nitride, tungsten nitride, titanium carbide, titanium carbonitride, chromium carbide and tungsten carbide. The concrete mold is manufactured through the mold body and the demolding layer formed by the multiple high-hardness materials, on one hand, the organizational structure of the metal carbon and / or nitride demolding layer material is greatly different from the organizational structure of concrete, adhesion between the concrete mold and a concrete workpiece is avoided as much as possible, and the demolding difficulty is reduced; and the concrete workpiece is difficult to damage the high-hardness demolding layer, so that the service life of the concrete mold is prolonged.

The application belongs to the technical field of catalysts, and relates to a Mott Schottky heterojunction catalytic material and a preparation method and application thereof. The application provides a preparation method of a Mott Schottky heterojunction catalytic material, which uses polyacrylonitrile, Ni(NO3)2.6H2O, WCl6 and an organic solvent as raw materials to obtain a PAN / WCl6 / Ni(NO3)2.6H2O composite nanofiber membrane through electrostatic spinning; and the composite nanofiber membrane is subjected to pre-oxidation and carbonization treatment to prepare the Mott Schottky heterojunction catalytic material. The Mott Schottky heterojunction catalytic material provided by the application has a unique 3D network structure, nickel nanoparticles and tungsten nitride nanowires are uniformly embedded on carbon nanofibers, the formed Mott Schottky heterojunction can significantly promote electron transfer, the carbon matrix ensures structural stability and efficient charge transport, and the Mott Schottky heterojunction catalytic material has excellent HER and SOR bifunctional catalytic activity.

Metal nitride diffusion barriers may be included between cobalt-based structures and ruthenium-based structures to reduce, minimize, and / or prevent intermixing of cobalt into ruthenium. A metal nitride diffusion barrier layer may include a cobalt nitride (CoNx), a ruthenium nitride (RuNx), or another metal nitride that has a bond dissociation energy greater than the bond dissociation energy of cobalt to cobalt (Co—Co), and may therefore function as a strong barrier to cobalt migration and diffusion into ruthenium. Moreover, cobalt nitride and ruthenium nitride have lower resistivity relative to other materials such as titanium nitride (TiN), tungsten nitride (WN), and tantalum nitride (TaN). In this way, the metal nitride diffusion barriers are capable of minimizing cobalt diffusion and intermixing into ruthenium-based interconnect structures while maintaining a low contact resistance for the interconnect structures. This may increase semiconductor device performance, may increase semiconductor device yield, and may enable further reductions in interconnect structure size.

The application discloses a kind of buffer oxide etching solution with high etching uniformity.The main components of the etching solution are hydrofluoric acid, ammonium fluoride, corrosion inhibitor and ultrapure water.The etching solution of the application is used for etching of silicon oxide film, and has little corrosion effect on tungsten nitride layer, and the surface uniformity of tungsten nitride layer is good after etching.The corrosion inhibitor has strong coordination ability and adsorption performance, and the corrosion inhibitor and tungsten nitride surface occur chemical adsorption, forming a protective film, which can prevent the further reaction of etching solution and tungsten nitride.The etching solution of the application has high selectivity to silicon oxide layer and tungsten nitride, and the etching selectivity ratio can be >4000.The etching solution of the application can effectively inhibit the corrosion of tungsten nitride, while ensuring the surface uniformity of tungsten nitride after etching of silicon oxide.

The invention provides a method for depositing a GLC film on the basis of the surface of a plastic workpiece through a PVD technology and the corresponding plastic workpiece. The method comprises the steps that S1, the plastic workpiece is subjected to ultrasonic cleaning and baking; s2, a chromium target, a tungsten target and a graphite target are washed through multi-arc ion plating magnetron sputtering coating equipment; s3, vacuumizing the placed plastic workpiece, and introducing argon to open a chromium target to form a metal chromium layer; s4, starting a chromium target and a tungsten target for introducing argon to form a metal chromium-tungsten layer; s5, argon and nitrogen are introduced for starting a bias power supply, a chromium target and a tungsten target are started, and a chromium tungsten nitride layer is formed; s6, turning on a bias voltage power supply, turning off nitrogen, turning on a chromium target, a tungsten target and a graphite target, and introducing argon and acetylene to adjust bias voltage, so as to form a multi-element nano multilayer film structure; s7, turning on a bias power supply, turning off the tungsten target, turning on the chromium target and the graphite target, and introducing argon and acetylene to form a GLC film layer; and S8, a target material power supply, acetylene, argon and a bias power supply are turned off, and the plastic workpiece is cooled.

To suppress reduction in throughput when a hard mask is removed.SOLUTION: When a hard mask is removed from a wafer in which surfaces of a pattern formed on an insulating layer and surfaces of the hard mask are covered with a CF-based deposit and the hard mask is formed of at least one of tungsten silicide and tungsten nitride silicide, first, the wafer is subjected to an oxygen ashing treatment, and then, temperature of the wafer W is set to 90°C or higher, and the wafer is subjected to an etching treatment with ClF3 gas.SELECTED DRAWING: Figure 1

The invention discloses a C / C-based tungsten nitride / bismuth tungstate composite material and a preparation method and application thereof.The preparation method comprises the steps that WN and Bi2WO6 are placed in the same beaker, then an isopropanol solution is added, stirring is conducted till the WN and the Bi2WO6 are evenly dispersed, then iodine is added, stirring continues to be conducted till the mixture is even, and a deposition solution is obtained; the preparation method comprises the following steps: pre-treating a C / C substrate, fixing the pre-treated C / C substrate on a negative electrode of hydrothermal electrophoretic deposition equipment, then putting the pre-treated C / C substrate in a deposition solution F, heating a hydrothermal deposition kettle, applying voltage to carry out electrophoretic deposition, putting a self-supporting sample after deposition into a drying oven for drying to finally obtain a C / C-WN / Bi2WO6 photoelectrode material, and synthesizing a WN / Bi2WO6 heterojunction on the C / C substrate to be used as a photoanode. Tungsten nitride is used as the electron transport layer, photo-induced electrons generated by light absorption of bismuth tungstate can be transmitted to the C / C substrate and then transmitted to the photocathode, the structure is beneficial to reduction of recombination of photo-induced carriers, and then the photoelectrocatalysis performance of bismuth tungstate is improved.

[Problem] To suppress decreases in throughput when a hard mask is removed. [Solution] According to the present invention, when a hard mask is removed from a wafer W wherein the surface of a pattern formed on an insulating layer and the surface of the hard mask are coated with a CF-based deposit and the hard mask is formed from at least one of tungsten silicide and tungsten silicide nitride, first an oxygen ashing treatment is performed on the wafer, and then, after the temperature of the wafer has been set to at least 90°C, an etching treatment is performed on the wafer with ClF3 gas.

The application discloses a method for preparing two-dimensional metal nitride by using bulk metal oxide powder, which comprises the following steps: 1) uniformly mixing and grinding metal oxide powder with alkali metal carbonate or alkali metal hydroxide; adding neutral alkali metal or alkali earth metal halide salt, and uniformly mixing and grinding again; 2) performing heat preservation reaction on the mixture obtained in the step 1) under ammonia atmosphere, and cooling; 3) performing acid washing on the reaction product obtained in the step 2), washing to neutral, performing suction filtration and centrifugation, and drying, so as to obtain two-dimensional metal nitride in nanosheet shape. The application firstly proposes a method for preparing two-dimensional metal nitride nanosheet by using alkaline-neutral mixed double salt as an auxiliary, and the alkali metal carbonate or alkali metal hydroxide is used as a reactant to synthesize an intermediate of alkali metal oxide with two-dimensional layer-like structure, and the neutral alkali metal or alkali earth metal halide salt is used as a molten salt auxiliary agent to promote the nitridation conversion of the alkali metal oxide. The method is suitable for preparing two-dimensional niobium nitride by using bulk niobium oxide, two-dimensional tungsten nitride by using bulk tungsten oxide, and two-dimensional molybdenum nitride by using bulk molybdenum oxide, and is related to a simple process and low cost.

The invention relates to the technical field of metallurgy, and particularly discloses a material modifier for ultrahigh-chromium high-carbon cast iron, the ultrahigh-chromium high-carbon cast iron and a smelting method of the ultrahigh-chromium high-carbon cast iron. The material modifier for the ultrahigh-chromium high-carbon cast iron is alloy metal powder and comprises the following raw materials in parts by weight: 6-8 parts of ferroniobium powder, 0.2-0.4 part of chromium nitride, 0.2-0.4 part of tungsten nitride, 0.15-0.25 part of vanadium nitride, 0.3-0.5 part of molybdenum nitride, 0.5-1.5 parts of chromium carbide and 3-5 parts of silicon carbide. The impact toughness and Rockwell hardness of the ultrahigh-chromium and high-carbon cast iron using the material modifier for the ultrahigh-chromium and high-carbon cast iron are as high as 4.90 J / cm < 2 > and 68.5 HRC, the toughness and hardness of the ultrahigh-chromium and high-carbon cast iron are improved, the minimum wear rate is 0.30%, and the ultrahigh-chromium and high-carbon cast iron has high wear resistance.

This invention belongs to the field of titanium nitride tungsten oxide composite films, and specifically relates to a method for preparing titanium nitride powder, titanium nitride tungsten oxide composites, and their composite films. A method for preparing titanium nitride powder includes the following steps: titanium tetrachloride is mixed with ethanol, nanocellulose, polyvinylpyrrolidone, tetrabutyl titanate, and ethanol; the mixture is heated and calcined; the calcined material is collected, ground, and placed in a plasma reaction vessel; after plasma arc discharge treatment, it is naturally cooled and then ball-milled to obtain titanium nitride powder. This application optimizes powder performance through component synergy and process integration. Simultaneously, it introduces tetrabutyl titanate, nanocellulose, and polyvinylpyrrolidone to construct a composite system, utilizing coordination and doping effects to regulate the microstructure of the powder from the source, effectively improving the dispersion stability and activity of the titanium nitride powder, laying a high-quality raw material foundation for the subsequent preparation of composites and composite films.

A three dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate; memory stack structures vertically extending through the alternating stack; and a backside trench fill structure. The backside trench fill structure includes a backside trench insulating spacer and a backside contact via structure. The backside contact via structure may include a tapered metallic nitride liner and at least one core fill conductive material portion. Alternatively, the backside contact via structure may include a tungsten nitride liner, a metallic nitride liner other than tungsten nitride, and at least one core fill conductive material portion.

Memory elements and methods of manufacturing memory elements are described herein. The memory element includes a bit line metal stack on a surface that includes a matrix of conductive bit line contacts (e.g., polysilicon) and insulating dielectric islands (e.g., silicon nitride (SiN)). The bit line metal stack includes one or more of titanium (Ti), tungsten (W), tungsten nitride (WN), tungsten silicide (WS), or silicon tungsten nitride (WSiN). The memory element includes a bit line metal layer (e.g., tungsten (W)) on a top surface of the insulating dielectric island and on the bit line metal stack.

The present application discloses a semiconductor device. The semiconductor device includes a substrate; a peripheral gate structure including: a peripheral gate insulating layer inwardly positioned in the substrate and including a U-shaped cross-sectional profile, a peripheral work function layer positioned on the peripheral gate insulating layer and including a recess, a first peripheral interconnect layer positioned on the peripheral work function layer, a first peripheral liner layer positioned between the peripheral work function layer and the first peripheral interconnect layer, and a peripheral capping layer positioned on the first peripheral interconnect layer. The peripheral work function layer includes titanium, titanium nitride, silicon, silicon germanium, or a combination thereof. The first peripheral liner layer includes graphene. The first peripheral interconnect layer includes tungsten, tungsten nitride, or a combination thereof.

The invention discloses a method for forming a semiconductor device, which comprises the following steps of: S1, providing a semiconductor device which comprises a plurality of back side grooves, and arranging a silicon oxide layer on the surface of each back side groove; s2, introducing a first processing gas, and performing surface modification on the silicon oxide layer under the action of a radio frequency power supply to form an amination interface; wherein the first treatment gas comprises nitrogen and hydrogen, and the volume ratio of the nitrogen is 50%-88%. According to the method, the silicon oxide interface is subjected to amination treatment before the tungsten nitride adhesion layer is formed, so that the reaction gas for forming the tungsten nitride and the silicon oxide are bonded in a chemical adsorption manner, and the adhesion between the product tungsten nitride and the silicon oxide layer is enhanced. Furthermore, by adjusting the proportion of nitrogen and hydrogen in the first processing gas, the adhesion of the tungsten nitride layer and the silicon oxide layer is effectively improved, after the tungsten layer and the aluminum film are sequentially formed subsequently, the defect that the aluminum gasket falls off due to layering of the tungsten layer and the silicon oxide layer in the FAB on-line process of the wafer can be avoided, and the product yield is improved.

Provided herein are methods of forming tungsten nitride (WN) barrier layers in features. Wafers may be loaded into a multi-station process chamber and metal is deposited into features. Deposition may occur across multiple stations to improve wafer to wafer uniformity. Preheating of wafers may be performed prior to deposition operations to improve metal layer properties.

The application provides a method for chemical vapor deposition of tungsten, which adopts a two-step nucleation method combined with a cyclic deposition process, that is, after forming a tungsten nitride layer for inhibiting the growth speed of tungsten, first, diborane is used to adsorb on the surface of the tungsten nitride layer to form high-activity nucleation sites, then, tungsten hexafluoride is introduced to react to form a first tungsten nucleation layer, then, the cyclic step of adsorption of silane and reaction with tungsten hexafluoride is repeated for multiple times, so as to form a second tungsten nucleation layer with a preset thickness by layer-by-layer accumulation, and finally, a tungsten main body layer is deposited, thereby effectively solving the problem that in the prior art, due to the discontinuous coverage or insufficient thickness of the nucleation layer at the bottom of a high-aspect-ratio contact hole, the hole is prematurely closed, and the internal part of the tungsten main body layer as a filling layer forms a hollow or a gap defect.

The invention relates to the technical field of metal, and discloses a high-strength wear-resistant aluminum material for a roller shutter door and a preparation method of the high-strength wear-resistant aluminum material. The preparation method comprises the steps that S1, a basic aluminum material is taken, laser cladding is conducted through mixed powder, and a titanium-nickel-silicon-tungsten layer with the thickness being 0.1-0.2 mm is formed on the surface of the basic aluminum material; the mixed powder comprises titanium powder, nickel powder, silicon powder and tungsten nitride powder in a mass ratio of (30-40): (30-40): (5-10): (1-5); the particle size is 200 meshes; s2, nitriding treatment is conducted on the aluminum material obtained in the step S1 and subjected to laser cladding; s3, the nitrided aluminum material obtained in the step S2 is subjected to surface sand blasting treatment; and S4, the surface of the aluminum material subjected to sand blasting treatment obtained in the step S3 is coated with wear-resistant paint, the coating thickness is 3-5 microns, curing and drying are conducted, and the high-strength wear-resistant aluminum material is obtained.

A method according to the present disclosure includes providing a substrate that includes a dummy gate stack wrapping over an active region, and a spacer layer extending along sidewalls of the dummy gate stack, selectively removing the dummy gate stack to form a gate trench exposing the active region, depositing a gate dielectric over the active region, depositing at least one work function layer over the gate dielectric layer, depositing a tungsten layer over the at least one work function layer, and depositing a tungsten nitride layer over the tungsten layer.

The invention discloses a preparation method of a platinum / tungsten nitride heterojunction carbon nanoflower electrocatalyst with high activity and wide pH water electrolysis hydrogen production performance, and belongs to the technical field of new energy materials. A metal-organic compound is used as a precursor, a platinum / tungsten nitride heterostructure is synthesized through a one-step pyrolysis method, and the platinum / tungsten nitride heterostructure is uniformly embedded into the surface of a nanosheet layer of a conductive carbon nanoflower matrix. The Pt-W2N (at) C has excellent electro-catalytic hydrogen evolution performance, shows ultralow overpotential in acidic, alkaline and neutral electrolytes, even has the electrochemical performance obviously superior to that of a commercial platinum-carbon catalyst under high current density, and shows good durability in a long-time stability test; and a new thought is provided for design and development of the low-platinum-loaded HER electrocatalyst.

This book describes memory devices and methods for manufacturing memory devices. A memory device includes a bit-wire metal stack on a surface that includes a matrix of conductive bit-wire contacts (e.g., polysilicon) and insulating dielectric islands (e.g., silicon nitride (SiN)). The bit-wire metal stack includes one or more of titanium (Ti), tungsten (W), tungsten nitride (WN), tungsten silicide (WSi2), or tungsten silicon nitride (WSiN). A memory device includes a bit-wire metal layer (e.g., tungsten (W)) on the upper surface of the insulating dielectric islands and on the bit-wire metal stack.

Embodiments of methods and related apparatus for filling features of a substrate are provided herein.SOLUTION: In some embodiments, a method of filling a feature of a substrate includes depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process, depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process, and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.SELECTED DRAWING: Figure 1

Metal nitride diffusion barriers may be included between cobalt-based structures and ruthenium-based structures to reduce, minimize, and / or prevent intermixing of cobalt into ruthenium. A metal nitride diffusion barrier layer may include a cobalt nitride (CoNx), a ruthenium nitride (RuNx), or another metal nitride that has a bond dissociation energy greater than the bond dissociation energy of cobalt to cobalt (Co—Co), and may therefore function as a strong barrier to cobalt migration and diffusion into ruthenium. Moreover, cobalt nitride and ruthenium nitride have lower resistivity relative to other materials such as titanium nitride (TiN), tungsten nitride (WN), and tantalum nitride (TaN). In this way, the metal nitride diffusion barriers are capable of minimizing cobalt diffusion and intermixing into ruthenium-based interconnect structures while maintaining a low contact resistance for the interconnect structures. This may increase semiconductor device performance, may increase semiconductor device yield, and may enable further reductions in interconnect structure size.

Coated substrate comprising: a plurality of substrate particles (30); an adhesive layer (36) disposed over each substrate particle, the adhesive layer (36) comprising a component selected from the group consisting of tungsten metal, a tungsten alloy, tungsten oxide, tungsten nitride, and tungsten carbide; and a precious metal layer (40) disposed over the adhesion layer, wherein the precious metal is selected from the group consisting of platinum, gold, palladium, iridium and alloys thereof, and combinations thereof; characterized in that the substrate further comprises an intermediate layer (34) disposed between each substrate particle (30) and the adhesion layer (36); and in that the adhesion layer (36) comprises a lattice-disrupting layer (36") between two tungsten metal layers (36') different from the lattice-disrupting layer (36").