Process for tungsten nitride deposition by a temperature controlled lid assembly

Abstract

Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims benefit of U.S. Ser. No. 60 / 887,142 (APPM / 011741L), filed Jan. 29, 2007, and U.S. Ser. No. 60 / 944,085 (APPM / 011741L02), filed Jun. 14, 2007, which are herein incorporated by reference in their entirety.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] Embodiments of the invention generally relate to a temperature controlled lid assembly for a processing chamber and a method for depositing tungsten-containing materials on a substrate by vapor deposition processes.

[0004] 2. Description of the Related Art

[0005] Modern integrated circuits contain large numbers of transistors. These transistors are generally field effect transistors that contain a source region and a drain region with a gate electrode located in between the source and drain regions.

[0006] A typical gate structure contains a thin polysilicon electrode that lies on top of a thin layer of gate oxide such as silicon oxide. The gate electrode and ...

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