13 results about "Tungsten hexafluoride" patented technology

The invention provides an anode, a device, a system and a method for producing tungsten hexafluoride through electrolysis. A tungsten-nickel alloy with the nickel content being 5-15 wt% is adopted for the anode, a NiF2-WF2 composite fluorinated layer with the thickness being 10-50 microns is pre-generated, the layer has high fluorine ion conductivity, and anode passivation is fundamentally inhibited. KF.2HF fused salt is used as a basic electrolyte of the electrolysis device, LiF and CsF are innovatively added as composite functional additives, LiF improves the wettability of a melt, CsF inhibits the anode effect, and efficient and stable electrolysis operation is guaranteed through cooperation of LiF and CsF. The production system is integrated with a gradient solidification separator, and condensation recovery of HF and desublimation collection of high-purity WF6 crystals are realized through the design of three temperature zones of 28-32 DEG C, 20-25 DEG C and-25--30 DEG C based on the vapor pressure difference of WF6 and HF. According to the scheme, through multi-level innovation and cooperation of materials, interfaces and systems, the defects that in a traditional method, anode failure is fast, product separation is difficult, and purity is low are overcome, efficient, long-period and high-purity production of tungsten hexafluoride is achieved, and the method is particularly suitable for high-end manufacturing industries such as semiconductors.

The invention discloses a synthesis process of tungsten hexafluoride, and relates to the technical field of special gas synthesis. The process comprises the following steps: mixing ammonium fluoride and hydrofluoric acid to prepare an activation solution, carrying out ultrasonic activation treatment on tungsten powder to obtain pretreated tungsten powder, and reacting the pretreated tungsten powder with fluorine gas at a certain temperature and pressure to prepare a liquefied crude product tungsten hexafluoride; the preparation method comprises the following steps: by taking aluminum sec-butoxide and the like as raw materials, carrying out sol-gel and ethanol supercritical drying and calcining to prepare highly porous activated aluminum oxide; gasifying the crude tungsten hexafluoride, adsorbing with activated aluminum oxide, and rectifying to obtain purified tungsten hexafluoride liquid; and finally, dissolving in liquid sulfur dioxide, treating under illumination with the wavelength of 395nm, and carrying out distillation separation to obtain high-purity tungsten hexafluoride. According to the method, the activation pretreatment is combined with multi-stage purification, so that the purity and the synthesis efficiency of tungsten hexafluoride are remarkably improved.

The utility model discloses a novel tungsten hexafluoride purification device which comprises an adsorption tower body, an air inlet formed in the upper end of the adsorption tower body, an air outlet formed in the lower end of the adsorption tower body, a purification part arranged in the middle of the adsorption tower body, a feed port formed in the left side of the upper end of the purification part, and a discharge port formed in the right side of the lower end of the purification part. Sealing plates are mounted in the feeding hole and the discharging hole; two groups of steel wire supporting frames are movably inserted into the purifying part; through the design of the feeding and discharging assembly, the two sets of steel wire supporting frames and the sodium fluoride filler layers and the potassium fluoride filler layers in the two sets of steel wire supporting frames are fed into the adsorption tower body, and the feeding and discharging assembly can be slidably adjusted at the lower end of the adsorption tower body; feeding or discharging the two groups of steel wire supporting frames and the sodium fluoride filler layers and the potassium fluoride filler layers in the two groups of steel wire supporting frames on the left side and the right side of the adsorption tower body respectively.

The utility model relates to the related field, and particularly discloses safety equipment for monitoring the temperature of a tungsten hexafluoride reactor, which comprises a temperature monitoring panel, a tungsten hexafluoride reactor main body, a temperature sensing rod, a suspender and a sealing gland, the bottom of the temperature monitoring panel is sealed on a sealing opening in the middle of the top end of the tungsten hexafluoride reactor body through a sealing gland, the middle of the bottom end of the temperature monitoring panel is connected with a temperature sensing rod through a hanging rod, cooling fins are arranged in the middles of the two sides of the temperature monitoring panel, and a warning lamp is arranged on one side of the top of the temperature monitoring panel. The middle of the bottom end of the temperature monitoring panel is connected with the temperature sensing rod through the hanging rod, the temperature sensing head is arranged at the end of the temperature sensing rod, multidirectional large-range temperature sensing can be carried out through the temperature sensing rod and the temperature sensing head, the temperature sensing efficiency and effect can be improved, the heat dissipation fins are arranged in the middles of the two sides of the temperature monitoring panel, and the heat dissipation efficiency is improved. The heat dissipation effect of the temperature monitoring panel can be improved through the heat dissipation fins.

The present application relates to the technical field of sleeper manufacturing, and discloses a continuous chemical vapor deposition preparation method of high-purity single-layer graphene, which comprises the following steps: a) using methane as a carbon source precursor gas, and mixing the methane with hydrogen gas at a volume ratio of 1:15 to form a mixed gas; b) adding 0.05% of tungsten hexafluoride as an auxiliary catalyst in the mixed gas; c) introducing the mixed gas above a pretreated copper substrate material; and d) performing a chemical vapor deposition reaction at a constant temperature of 1000 DEG C and under a pressure condition of 150 Pa to form single-layer graphene; the present application improves the uniformity and quality of the graphene film. The trace amount of tungsten hexafluoride added as an auxiliary catalyst optimizes the growth conditions of the graphene, the residues on the substrate are completely removed through the alternate cleaning of ultrapure water and isopropyl alcohol and the drying by nitrogen blowing, the occurrence of oxidation is prevented, and the purity of the product is improved.

An apparatus includes a body configured to support a substrate, a first coating, conformal on a surface of the body, that is corrosion resistant to at least one of: boron trichloride, nitrogen trifluoride, hafnium tetrachloride, aluminum trichloride, oxygen gas, chlorine gas, fluorine gas, chlorine trifluoride, hydrogen fluoride, hydrogen gas, ammonia, tungsten hexafluoride, tetrafluoromethane, titanium tetrachloride, molybdenum pentachloride, ozone, tetrafluorosilane, or hexafluoroethane, and a second coating, on the first coating, having a hardness that greater than or equal to about 8 gigapascals.

The invention relates to the field of sputtering targets for semiconductor manufacturing, and particularly provides a fine-grain tungsten target and a preparation method thereof.The preparation method comprises the steps that 1, halogenated alkane is pre-activated and then subjected to chemical vapor deposition with hydrogen and tungsten hexafluoride on a substrate, and a carbon-doped tungsten material is formed; and (2) the carbon-doped tungsten material is subjected to annealing treatment at the temperature of 1500-2100 DEG C, and the fine-grain tungsten target material is obtained. The preparation method is simple in process, and the prepared tungsten target material has high purity, high density and an equiaxed fine grain structure.

The method comprises providing a partially manufactured semiconductor substrate 3D structure in a chamber, the 3D structure comprising a side wall and a plurality of openings in the side wall leading to a plurality of features having a plurality of internal regions through which the openings are fluidly accessible, and depositing a tungsten nucleation layer on the plurality of features using one or more deposition cycles, each deposition cycle comprising (a) administering diborane to the chamber two or more times without purging between diborane administrations, (b) purging the chamber after step (a), and (c) administering tungsten hexafluoride to the chamber one or more times after step (b), wherein purging is performed each time tungsten hexafluoride is administered.

The present invention relates to the technical field of sulfur hexafluoride degradation, and particularly to a double-anode thermal plasma-based sulfur hexafluoride conversion device and method. The device comprises: a ventilation assembly, which comprises a gas mixing member and a control member, the control member being arranged on the gas mixing member; a degradation assembly, which comprises a reaction member and a degradation member, the reaction member being arranged on the gas mixing member, and the degradation member being arranged on the reaction member; and a cooling and exhaust assembly, which comprises a cooling member and an exhaust member, the cooling member being arranged on the reaction member, and the exhaust member being arranged on the cooling member, such that high-concentration SF6 degradation can be realized. The degradation efficiency is high, and the degradation rate is relatively fast; the contents of degraded components can be visually displayed, and data investigation is very convenient; an arc-striking anode increases the arc length and arc pressure, thereby achieving a low-current input and a high-power output; and the main product after degradation is tungsten hexafluoride, and thus the exhaust gas after degradation is also recoverable.

The application provides a method for chemical vapor deposition of tungsten, which adopts a two-step nucleation method combined with a cyclic deposition process, that is, after forming a tungsten nitride layer for inhibiting the growth speed of tungsten, first, diborane is used to adsorb on the surface of the tungsten nitride layer to form high-activity nucleation sites, then, tungsten hexafluoride is introduced to react to form a first tungsten nucleation layer, then, the cyclic step of adsorption of silane and reaction with tungsten hexafluoride is repeated for multiple times, so as to form a second tungsten nucleation layer with a preset thickness by layer-by-layer accumulation, and finally, a tungsten main body layer is deposited, thereby effectively solving the problem that in the prior art, due to the discontinuous coverage or insufficient thickness of the nucleation layer at the bottom of a high-aspect-ratio contact hole, the hole is prematurely closed, and the internal part of the tungsten main body layer as a filling layer forms a hollow or a gap defect.

The utility model discloses safety equipment for monitoring the pressure of a tungsten hexafluoride reactor. The safety equipment comprises a controller and a reaction kettle, the controller is mounted on one side of the reaction kettle, the wireless transceiver module is mounted on the upper side of the controller, the uninterruptible power supply is mounted at the bottom end of the controller, the electronic pressure gauge is mounted on one side of the upper end of the reaction kettle, and the electromagnetic safety valve is mounted on the other side of the upper end of the reaction kettle; one end of the electromagnetic safety valve and one end of the electronic pressure gauge are provided with wires, the tail ends of the wires are connected with a controller through a conductive mechanism, and one end of the electromagnetic safety valve is provided with a guide pipe. According to the utility model, the wireless transceiver module can realize data transmission and remote interaction between the controller and external equipment or a monitoring center, so that a worker can remotely master the running state of the equipment; and the uninterruptible power supply can continuously supply power to the controller under the condition of sudden power failure, so that normal operation of pressure monitoring and safety protection functions is ensured, and dangers caused by out-of-control equipment due to power failure are avoided.

The present application relates to a kind of system for processing tungsten hexafluoride synthesis tail gas, including intake pipeline;The one end of the intake pipeline is communicated with tungsten hexafluoride synthesis tail gas discharge pipe, and the other end of the intake pipeline is divided into two-way pipeline, and two-way pipeline is connected adsorption tower A and adsorption tower B respectively, and the adsorption tower A and adsorption tower B are arranged in parallel, and the top of the adsorption tower A and adsorption tower B is connected waste gas absorption tower, and the bottom of the adsorption tower A and adsorption tower B is connected plasma reactor, and the outlet of the plasma reactor is connected product collection tank.The present application relates to a kind of method for processing tungsten hexafluoride synthesis tail gas, including tail gas absorption and adsorption tower regeneration step.The present application realizes trace NF3 and high-purity tungsten powder reaction, further recovers NF3 in tail gas, reduces WF6 production cost and tail gas processing cost.

The invention discloses a preparation method of a lithium-rich manganese-based positive electrode material. The preparation method comprises the following steps: step 1, feeding a nickel source, a cobalt source, a manganese source, a lithium source, tungsten hexafluoride and deionized water into an ultrasonic atomization device to form small liquid drops; step 2, feeding small liquid drops obtained by atomization into an ultrasonic reactor through carrier gas, and preheating to obtain tiny crystal grains; and 3, transferring the preheated small crystal grains into a microwave device for heating to obtain the lithium-rich manganese-based positive electrode material. Through combination of ultrasonic preheating and microwave heating, the technological process is reduced, the reaction time is shortened, the energy consumption is reduced, industrial large-scale rapid production is facilitated, and the lithium-rich manganese-based positive electrode material with high purity, high energy and excellent cycle performance is prepared through doping of tungsten hexafluoride.