123 results about "Tungsten hexafluoride" patented technology

A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

The invention provides a method for preparing ethylene glycol and 1,2-propylene glycol by using a high-concentration saccharide solution. Reaction raw materials comprise cane sugar, glucose, fructose, fructosan, xylose, soluble lower polyxylose and soluble starch. According to the method, high-concentration saccharide is used as a reaction raw material, and a high-pressure pump feeding mode is used in a reaction process which is performed in a high-pressure reaction kettle; iron, cobalt, nickel, ruthenium, rhodium, palladium, iridium and platinum which serve as transition metal in eighth, ninth and tenth groups are used as hydrogenation active ingredients; the hydrogenation active ingredients form a composite catalyst together with metal tungsten, tungsten carbide, tungsten nitride, tungsten phosphide, tungsten oxide, tungsten sulfide, tungsten chloride, tungsten hydroxide, tungsten bronze, tungstic acid, tungstate, metatungstic acid, metatungstate, paratungstic acid, paratungstate, peroxotungstic acid, peroxotungstate and tungsten-containing heteropolyacid which serve as catalytic active ingredients; and the high-concentration saccharide solution can be efficiently prepared into the ethylene glycol and the propylene glycol at high selectivity and high yield in a one-step catalytic conversion process under the hydrothermal condition that the temperature is 120 to 300 DEG C and the hydrogen pressure is 1 to 13MPa. By the method, the problem of coking of the high-concentration saccharide in the catalytic conversion process can be effectively solved, and high-concentration ethylene glycol and propylene glycol can be prepared by the high-concentration saccharide.

The present Invention provides new and useful apparatus and methods for purifying WF6 gas, and In particular, provides apparatus and methods of using carbonaceous materials to produce high purity WF6by removing substantially all the high volatility gas impurities and troublesome transition metal impurities The present invention is particularly useful for removing chromium and molybdenum impurities from WF6 gas.

The invention discloses a preparation method of a nitric oxide gas sensor element based on a pseudodirected tungsten trioxide nano tape, which comprises the steps of: 1, preparing a tungsten hexachloride solution; 2, regulating the mol concentration of tungsten hexachloride to be 0.003-0.012M; 3, synthesizing a pseudodirected tungsten oxide nano wire; 4, preparing a pseudodirected tungsten oxide nano wire; 5, preparing a sensitive material slurry; and 6, preparing the sensor element based on the pseudodirected tungsten trioxide nano tape. The sensor element based on the pseudodirected tungsten trioxide nano tape, prepared by using the method, has the advantages of high sensitivity, high selectivity, low working temperature and low power consumption for the low-concentration nitric oxide gas detection.

The invention discloses a tungsten carbide shell layer coated lithium iron phosphate positive electrode material and a preparation method therefor. The tungsten carbide shell layer coated lithium iron phosphate positive electrode material is prepared by the steps of putting lithium iron phosphate into a reaction chamber, performing vacuum pumping, and carrying out heating to 200-500 DEG C; taking tungsten hexafluoride and methane at a volume ratio of 1:1-1.5 as the gas raw materials and injecting the gas raw material into the reaction chamber; maintaining the total gas pressure intensity in the reaction chamber at 10-100Pa, and performing reaction for 10-60min to obtain the positive electrode material, wherein the power supply output power of the radio frequency plasma is 400-800W. The tungsten carbide shell layer coated lithium iron phosphate prepared by the invention has an excellent rate capability.

A semiconductor device manufacturing method includes a process for filling holes in a dielectric film with tungsten. The process deposits tungsten in the holes, partially etches the deposited tungsten, and then deposits additional tungsten in the holes. Voids that may be left by the first tungsten deposition step are made accessible by openings formed in the etching step, and are then filled in by the second tungsten deposition step. Tungsten hexafluoride may be used as both a deposition source gas and an etching gas, providing a simple and inexpensive process that is suitable for high-volume production.

Methods of making a read sensor with a selectively deposited lead layers are disclosed. In one illustrative example, the method includes the acts of forming a plurality of read sensor layers over a wafer; forming a monolayer photoresist to mask the plurality of read sensor layers in a central region; ion milling to remove the unmasked plurality of read sensor layers in side regions to thereby form a read sensor in the central region; depositing longitudinal bias layers in the side regions; and depositing a silicon reactant layer over the longitudinal bias layers in the side regions. After removing the monolayer photoresist, a silicon reduction process and a hydrogen reduction process are sequentially performed for the selective depositions of the lead material. In the silicon reduction process, tungsten hexafluoride (WF6) and argon (Ar) gases are passed over the wafer to thereby selectively deposit a relatively thin W film only on the Si reactant layer in the side regions through the following chemical reaction: 2WF6+3Si→2W+3SiF4. In the hydrogen reduction process, WF6 and hydrogen (H2) gases are passed over the wafer to thereby selectively deposit a relatively thick W film only on the W film in the side regions through the following chemical reaction: WF6+3H2→W+6HF.

The invention discloses a preparation method of a tungsten oxide electrochromic film with a high spectral adjustment range. The method includes: adopting tungsten hexachloride and oxalic acid as the raw materials to prepare a precursor solution, and then carrying out solvothermal reaction to obtain the product. In the precursor solution, the concentration of tungsten hexachloride is 1-15g / L. According to the preparation method of the tungsten oxide electrochromic film with a high spectral adjustment range provided by the invention, oxalic acid is introduced as a structural adjustment agent toincrease the adhesion amount of the tungsten oxide electrochromic film on a conductive substrate under a low W source concentration, thus effectively enhancing the spectral adjustment range and increasing the raw material utilization. The preparation method is simple, is low in cost, and is safe and reliable.

Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.