This application provides a method for preparing
metal chlorides. This method and apparatus solve the problem of inaccurate flow metering of chlorides as reactants in existing
chemical vapor deposition (CVD) processes. The method includes: installing a dedicated
chlorine flow meter at the inlet of a
chlorine gas inlet
pipe; adding bulk
metal to a reaction vessel and sealing the vessel; purging the reaction vessel containing the bulk
metal with an
inert protective gas, heating to remove water and
oxygen; heating to a specified temperature, shutting off the
inert protective gas, and starting the
chlorine gas reaction. This invention precisely controls the flow rate of the
chlorine gas to generate a fixed amount of
metal chloride. Under the action of a reducing gas, a uniformly deposited, high-strength metal /
carbide coating is obtained on the
substrate surface. This
coating is virtually free of impurities, and the deposited substrate can be used in industries such as semiconductors and
medicine. This method is low-cost, produces stable products, and is easy to scale up.