The invention provides a method for preparing
indium trifluoride in a continuous
gas phase, which comprises the following steps of: performing atomization, sublimation or
fluidization pretreatment on an
indium source in an
inert carrier gas
atmosphere to form a gaseous or superfine particle
indium source material flow; continuously introducing the indium
source material flow and
fluorine-containing gas into a
continuous reactor with a function of mechanically updating a
reaction interface, and carrying out gas-phase fluorination reaction at the
reaction temperature of 500-900 DEG C to generate a gas-
solid mixture containing indium
trifluoride solid and
tail gas; wherein the feeding
molar ratio of an indium element in the indium source to a
fluorine element in the
fluorine-containing gas is 1: (3.0-6.5); and performing continuous gas-
solid separation on the gas-solid mixture obtained in the step S2. Through specific reactor selection and process parameter
coupling, the preparation difficulties that the efficiency is low, the
energy consumption is high, the product consistency is poor and the
metal indium is easy to sinter and coat when the indium
trifluoride is prepared by an existing intermittent method are overcome, the safe and
continuous production of the indium trifluoride is realized, and the product purity reaches the electronic grade standard.