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104 results about "Diethylzinc" patented technology

Diethylzinc (C₂H₅)₂Zn, or DEZ, is a highly pyrophoric and reactive organozinc compound consisting of a zinc center bound to two ethyl groups. This colourless liquid is an important reagent in organic chemistry. It is available commercially as a solution in hexanes, heptane, or toluene, or as a pure liquid.

Ternary polymerization catalyst of norbornene, octafluorocyclopentene and styrene and ternary polymerization method

The invention relates to a ternary polymerization catalyst of norbornene, octafluorocyclopentene and styrene and a ternary polymerization method, wherein the catalyst is prepared through a following method comprising steps of: 1) dissolving neodymium trichloride, diethyl zinc and a ligand compound in a first solvent in a dried single-mouth glass bottle under an inert gas atmosphere; 2) sealing the mouth of the bottle by a latex pipe, performing a reaction at a constant temperature of 40-60 DEG C for 20-30 min to prepare a neodymium/zinc complex catalyst; 3) according to a ratio of 1:1:1, adding a norbornene monomer, an octafluorocyclopentene monomer and a styrene monomer into a high-pressure kettle which is vacuumized for several times and is filled with nitrogen, and adding a second solvent to dissolve the raw materials; 4) adding the neodymium/zinc complex catalyst, and carrying out a reaction at 20-90 DEG C for 0.1-6 MPa for 1-6 h; and 5) washing a reaction product to obtain a terpolymer. The raw materials of the catalyst are low in cost and are easy to obtain. The catalyst can generate catalytic activity at a low temperature and is high in catalytic efficiency. A product is very easy to wash and separate and the method is high in yield of the co-polymer.
Owner:NINGBO UNIVERSITY OF TECHNOLOGY

Norbornene, styrene and maleic anhydride ternary polymerization catalyst and ternary polymerization method

The invention relates to a norbornene, styrene and maleic anhydride ternary polymerization catalyst and a ternary polymerization method. The norbornene, styrene and maleic anhydride ternary polymerization catalyst is characterized in that a preparation method of the catalyst comprises the steps of dissolving rhodium chloride, iethylzinc and a ligand compound into a first solvent in a single-neck glass bottle with a dry inert atmosphere, sealing the bottleneck, and keeping the constant temperature of 40-50 DEG C for 15-30 minutes to obtain a rhodium-zinc complex catalyst. The ternary polymerization method comprises the steps of adding norbornene monomers, styrenes and maleic anhydride monomers into the multiply vacuumized and dried single-neck glass bottle with the dry inert atmosphere according to the molar ratio of 1:1:1, and then, adding a second solvent to dissolve; and then, adding the rhodium-zinc complex catalyst, and reacting at the temperature of 20-90 DEG C for 1-8 hours. The catalyst provided by the invention is cheap and available in raw materials, capable of generating catalytic activity at a relatively low temperature, low in polymerization reaction temperature and high in catalytic efficiency; and in addition, the catalyst is easily washed and separated, and the yield of copolymers is high.
Owner:NINGBO UNIVERSITY OF TECHNOLOGY

Preparation method of surface acoustic wave filter in AlN/GAZO/self-supporting diamond film structure

The invention belongs to the field of piezoelectric thin-film materials, and particularly relates to a preparation method of a surface acoustic wave filter in an AlN/GAZO/self-supporting diamond film structure. The method comprises the following steps: cleaning a self-supporting diamond film used as a substrate, sending the self-supporting diamond film into a vapor deposition reaction chamber, introducing nitrogen gas, trimethyl aluminum, trimethyl gallium and diethyl zinc into the reaction chamber to deposit a GAZO film with the thickness of 80-120nm on the substrate, introducing trimethyl aluminum to deposit an AlN thin film with the thickness of 800nm on the substrate carrying the GAZO film, cooling the inside of the vapor deposition reaction chamber to room temperature, and opening the deposition chamber to obtain the surface acoustic wave filter in an AlN/GAZO/self-supporting diamond film structure. The method provided by the invention is simple, the technique is easy to control, and the prepared piezoelectric thin-film device has the advantages of favorable uniformity and excellent acoustic speed transmission performance and can be used for manufacturing high-power high-frequency surface acoustic wave filters.
Owner:SHENYANG INST OF ENG +1

Preparation method and application of texture structure ZnO thin film on glass substrate

InactiveCN102418080AGood for light scatteringFacilitate the realization of depositionChemical vapor deposition coatingSemiconductor devicesTwo stepSilicon thin film
The invention discloses a preparation method of a texture structure ZnO thin film on a glass substrate. In the preparation method, by taking diethyl zinc and water as raw materials and taking borane (B2H6) as a doping gas, a texture structure Zno-TCO thin film is grown on the glass substrate by adopting a metal organic chemical vapor deposition method and using two specific steps of: firstly, growing a layer of a pyramid-like-shaped structure ZnO thin film with a large crystal grain size on the glass substrate; and secondly, growing a layer of round-ball-shaped ZnO thin film with a small crystal grain size on the ZnO thin film. The texture structure ZnO thin film on the glass substrate is used for a pin-type microcrystallite silicon thin film solar cell or an amorphous silicon/microcrystallite silicon laminated thin film solar cell. The preparation method has the advantages of simple process and convenience in large-area production and popularization; and by adopting a two-step method growing technology compatible with a process technique, light scattering of visible light and near-infrared region and the subsequent deposition of a silicon-based thin film are facilitated to realize and the photoelectric conversion efficiency of the solar cell can be effectively improved.
Owner:NANKAI UNIV

Suede-structured ZnO film prepared by alternative growth technology and application thereof

InactiveCN102433545AGood for light scatteringFacilitate the realization of depositionChemical vapor deposition coatingSemiconductor devicesHydrogenSource material
The invention provides a suede-structured ZnO film prepared by an alternative growth technology. A suede-structured ZnO-TCO (transparent conductive oxide) film is alternatively grown on a glass substrate by a metal organic chemical vapor deposition method based on diethylzinc and water as source materials and hydrogen used for diluting and doping a gas borane B2H6. The steps are as follows: 1) firstly, growing a layer of undoped ZnO film on the glass substrate; 2), then growing a B-doped type ZnO film on the undoped ZnO film; and 3) repeating the steps 1) and 2), so as to obtain a multi-layer overlapping-grown ZnO film. The suede-structured ZnO film has the advantages that the direct growth of the suede-structured ZnO film on the glass substrate can be realized by using an MOCVD (metal oxide chemical vapor deposition) technology; the preparation method has simple process, and is convenient for large-area production and popularization; through the alternative growth technology compatible to the process technology, the light scattering of visible light and neat infrared regions and subsequent deposition of a silicon-based film are facilitated; and the suede-structured ZnO film can be applied to a film solar battery, thereby effectively improving the photoelectric conversion efficiency.
Owner:NANKAI UNIV

Method and application for preparing ultra-thin copper seed layer by processing surfaces of hydrogen plasmas

The invention belongs to the technical field of semiconductor integrated circuits, specifically a method for preparing an ultra-thin copper seed layer by processing surfaces of remote hydrogen plasmas. The method disclosed by the invention comprises the following steps: absorbing bi(hexafluoro-acetylacetone) copper on a diffusion barrier layer to remove residual bi(hexafluoro-acetylacetone) copper; absorbing diethyl zinc on the diffusion barrier layer to remove residual diethyl zinc; repeating the above steps to achieve the target thickness of the ultra-thin copper seed layer; finally inputting the remote hydrogen plasmas to process the surface. With an ALD (Atomic Layer Deposition) method, the copper seed layer is grown, the thickness of the copper seed layer can be effectively controlled under lower technique temperature, and the copper seed layer has good groove filling performance; with remote hydrogen plasmas pulse, gas byproducts can be generated by reacting with impurities in a deposition film and are taken away through carrier gas, thus the quality of the deposition film is improved, the adhesion characteristic of electro-coppering and the copper seed layer is improved, and the reliability in the copper-connection application of the integrated circuits is kept.
Owner:FUDAN UNIV

Chiral dinaphtholsiloxane derivatives and preparation method thereof

The invention relates to a chiral linking naphthol siloxane derivative connected by the 6, 6-propylamine amide methyl and the preparation method. The invention is characterized in the structural formula; therein, R is chosen from the - CH2OCH3,-CH3, -C12H25 or - C16H33. After the later graft or copolycondensation to be loaded on the mesoporous silicon dioxide, the chiral linking naphthol siloxane derivative provided in the invention can be used in a plurality of catalytic reactions, such as the asymmetric synthetic reaction of the diethyl zinc and the benzaldehyde, the asymmetric Baylis-Hillman reaction, and so on. Therein, the linking naphthol siloxane derivative protected by the methoxy methyl can be used to prepare the mesoporous material after the copolycondensation or the later graft to protect the easy doffing of the base groups, and can be directly used in the catalytic reaction; the linking naphthol siloxane derivative protected by the long-chain alkyl can be used as the siloxane modifying reagent and the surfactant at the same time to prepare the complex mesoporous material. In the synthesis method of the chiral linking naphthol siloxane derivative, the raw materials are easy to access; the synthesis process is simple and easy.
Owner:CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI

Method for increasing conversion efficiency of thin-film solar cell

The invention relates to the photovoltaic field of thin-film solar cells, and provides a method for increasing the conversion efficiency of a thin-film solar cell. The thin-film solar cell includes a substrate, a back electrode, a P-type light absorption layer, an N-type buffer layer and a window layer, wherein the back electrode, the P-type light absorption layer, the N-type buffer layer and the window layer are successively deposited on the substrate. The window layer includes an intrinsic layer and a doping conducting layer, the intrinsic layer is an intrinsic i-ZnO thin film, and the doping conducting laye ris aluminum-doping ZnO: AI thin film or a boron-doping ZnO:B thin film. The intrinsic layer and the doping conducting layer both have diethylzinc or dimethylzinc acting as zinc sources and are deposited to thin films by adopting a low pressure chemical vapor deposition method. The intrinsic layer and the doping conducting layer are successively deposited on the surface of the N-type buffer layer. The solar cell prepared by the method herein has the characteristics of high conversion efficiency, low requirements for technology and devices, easy mass-production and low cost.
Owner:GUANGDONG HANERGY THIN FILM SOLAR CO LTD

Method for preparing ultra-thin copper seed crystal layer on diffusion barrier layer and application thereof

The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to a method for preparing an ultra-thin copper seed crystal layer on a diffusion barrier layer and an application thereof. According to the method, an atomic layer deposition method is used for preparing the ultra-thin copper seed crystal layer, and the method includes the following steps that Cu (C5HF6O2)2 is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute; diethylzinc is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute. The method has the advantages that the ALD method is adopted for growing the copper seed crystal layer, under a lower process temperature, only a film with the thickness about 0.02-1nm is formed in each growth cycle, the thickness of the copper seed crystal layer can be effectively controlled, the groove filling performance is good, the adhesion property of electroplated copper and the copper seed crystal layer is improved, the reliability of the method in the integrated circuit copper interconnection application is maintained, and the method provides an ideal interconnection technology solution to technology nodes with the thickness below 22nm.
Owner:FUDAN UNIV

Combustion rate regulator for carbon-based zinc oxide composite propellant and low-temperature preparation method thereof

The invention provides a low-temperature preparation method of a combustion rate regulator for a carbon-based zinc oxide composite propellant, which mainly comprises the following steps: exposing a carbon-based substrate in diethyl zinc vapor to adsorb vapor molecules on the surface of the carbon-based substrate; blowing away part of physically adsorbed diethyl zinc molecules on the surface of thesubstrate from the surface of the substrate by using inert gas; exposing the carbon-based substrate to steam of water, so that steam molecules of the water and adsorbed diethyl zinc molecules are subjected to a chemical reaction; using inert gas for blowing away byproducts and redundant steam molecules on the surface of the substrate from the surface. The invention discloses a combustion rate regulator. Compared with a traditional combustion speed regulator and a carbon-based combustion speed regulator prepared by adopting other methods, the combustion rate regulator of the invention is excellent in combustion speed regulation capability, capable of effectively reducing the AP decomposition temperature and optimizing the energy release structure, is mild in preparation temperature, high in automation degree, good in safety performance, capable of being directly used without aftertreatment, easy to realize batch production and environmentally friendly.
Owner:XIAN MODERN CHEM RES INST
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