Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of surface acoustic wave filter in AlN/GAZO/self-supporting diamond film structure

A technology of surface acoustic wave filtering and diamond film, which is applied in electrical components, metal material coating process, gaseous chemical plating, etc. The effect of excellent sound speed transmission performance, easy process control and simple method

Inactive Publication Date: 2013-04-03
SHENYANG INST OF ENG +1
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But diamond is not a piezoelectric material, it does not have piezoelectricity itself, and cannot excite and receive surface waves. It is necessary to deposit a layer of piezoelectric film on its surface to make a multi-layer thin-film SAW filter. Therefore, how to use high-sonic material diamond The key issue of current research is to deposit piezoelectric films with high c-axis orientation, low surface roughness and high resistance so that they can be applied to the multi-layer film system of high-frequency SAW filters.
[0005] AlN is an electrical insulator with good dielectric properties, high sound propagation rate, low transmission loss, good chemical stability, good permeability and small absorption in the short infrared band to long infrared band, and excellent high temperature oxidation resistance. However, due to the high lattice fit between the self-supporting diamond thick film substrate and the AlN material, such a large lattice fit causes a high dislocation density, which will make the surface acoustic wave filter The increase of non-radiative recombination centers in the device limits the further improvement of its internal quantum efficiency and is not conducive to the transmission of sound waves. Therefore, how to integrate high-quality AlN piezoelectric thin films that meet the requirements of SAW devices on thick diamond films has become an urgent problem to be solved. key technical problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of surface acoustic wave filter in AlN/GAZO/self-supporting diamond film structure
  • Preparation method of surface acoustic wave filter in AlN/GAZO/self-supporting diamond film structure
  • Preparation method of surface acoustic wave filter in AlN/GAZO/self-supporting diamond film structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Using the self-supporting diamond film as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen and sent to the vapor deposition reaction chamber;

[0025] Vacuum the vapor deposition reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 485°C, and the flow rate of 120sccm of oxygen, the flow rate of 0.3sccm of trimethylaluminum, the flow rate of 0.8sccm of trimethylgallium and the flow rate of 1.0sccm of diethylzinc into the reaction chamber , control the microwave power to 600W, and deposit a GAZO film with a thickness of 100nm on the substrate;

[0026] Stop feeding trimethylaluminum, trimethylgallium and diethylzinc after the deposition finishes, purge the vapor deposition reaction chamber with nitrogen, then pass into the trimethylaluminum that the flow rate is 0.9sccm, and control the nitrogen flow rate as 130sccm, the The substrate is heated to 600°C, the microwave power is contr...

Embodiment 2

[0028] Using the self-supporting diamond film as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen and sent to the vapor deposition reaction chamber;

[0029] Vacuum the vapor deposition reaction chamber to 8.0×10 -4 Pa, heat the substrate to 485°C, and feed into the reaction chamber oxygen with a flow rate of 80 sccm, trimethylaluminum with a flow rate of 1.0 sccm, trimethylgallium with a flow rate of 0.5 sccm and diethylzinc with a flow rate of 0.6 sccm , control the microwave power to 600W, and deposit a GAZO film with a thickness of 80nm on the substrate;

[0030] Stop feeding trimethylaluminum, trimethylgallium and diethylzinc after the deposition finishes, purge the vapor deposition reaction chamber with nitrogen, then pass into the trimethylaluminum that the flow rate is 0.3sccm, and control the nitrogen flow rate as 80sccm, the The substrate was heated to 500°C, and the microwave power wa...

Embodiment 3

[0032] Using the self-supporting diamond film as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen and sent to the vapor deposition reaction chamber;

[0033] Vacuum the vapor deposition reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 485°C, and the flow rate of 200 sccm of oxygen, the flow rate of 2.0 sccm of trimethylaluminum, the flow rate of 2.0 sccm of trimethylgallium and the flow rate of 3.0 sccm of diethylzinc into the reaction chamber , control the microwave power to 600W, and deposit a GAZO film with a thickness of 80nm on the substrate;

[0034] After the deposition, stop feeding trimethylaluminum, trimethylgallium and diethylzinc, purge the vapor deposition reaction chamber with nitrogen, then feed the trimethylaluminum with a flow rate of 2.0sccm, and control the nitrogen flow rate to be 150sccm. The substrate was heated to 900°C, and the microwave power was controlled t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of piezoelectric thin-film materials, and particularly relates to a preparation method of a surface acoustic wave filter in an AlN / GAZO / self-supporting diamond film structure. The method comprises the following steps: cleaning a self-supporting diamond film used as a substrate, sending the self-supporting diamond film into a vapor deposition reaction chamber, introducing nitrogen gas, trimethyl aluminum, trimethyl gallium and diethyl zinc into the reaction chamber to deposit a GAZO film with the thickness of 80-120nm on the substrate, introducing trimethyl aluminum to deposit an AlN thin film with the thickness of 800nm on the substrate carrying the GAZO film, cooling the inside of the vapor deposition reaction chamber to room temperature, and opening the deposition chamber to obtain the surface acoustic wave filter in an AlN / GAZO / self-supporting diamond film structure. The method provided by the invention is simple, the technique is easy to control, and the prepared piezoelectric thin-film device has the advantages of favorable uniformity and excellent acoustic speed transmission performance and can be used for manufacturing high-power high-frequency surface acoustic wave filters.

Description

[0001] technical field [0002] The invention belongs to the field of piezoelectric thin film materials, and in particular relates to a preparation method of a surface acoustic wave filter device with an AlN / GAZO / self-supporting diamond film structure. Background technique [0003] The surface acoustic wave filter is a frequency-selective device prepared by using the surface acoustic wave effect and resonance characteristics. It is the most widely used SAW (surface acoustic wave) device. Its function is to allow signals in a certain frequency band to pass through , while preventing signals from other frequency bands from passing through, the center frequency of the SAW filter made with an interdigital transducer (IDT) f is the surface acoustic wave propagation velocity of the material V and the period of the IDT electrode L determined, that is f = V / L . [0004] As we all know, diamond is the material with the fastest sound propagation speed among all substances, whi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/30H03H9/64
Inventor 张东赵琰张晓慧李昱材李双美齐德江刘莉宝郭瑞王帅杰高微赵丹
Owner SHENYANG INST OF ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com