15 results about "Trimethylgallium" patented technology

The invention provides a method for preparing a beta-Ga2O3 heteroepitaxial thin film with high crystal quality on a sapphire substrate, which comprises the following steps of: selecting a sapphire single crystal wafer as a substrate, cleaning the sapphire single crystal wafer, and putting the cleaned sapphire single crystal wafer into metal organic chemical vapor deposition equipment; with trimethyl gallium or triethyl gallium as a gallium source and oxygen as an oxygen source, growing a beta-Ga2O3 thin layer with the thickness of less than 10 nm; hydrogen is introduced, and the defect bond of the beta-Ga2O3 thin film is etched; the temperature of the substrate is increased to 1000 DEG C or above, oxygen is introduced, annealing is carried out, the defects are further bridged, and oxygen vacancies are reduced; and reducing the temperature of the substrate to the growth temperature, repeating the steps 2-4, and gradually accumulating the thickness to reach an expected value. According to the method, layer-by-layer growth and in-situ defect repair are combined, and the ultra-wide forbidden band beta-Ga2O3 heteroepitaxial crystal film with extremely low defect density and ultra-high quality is successfully prepared.

The invention relates to the technical field of semiconductors, in particular to an InGaAs / InP heterogeneous material epitaxial growth method, which comprises the following steps of: opening a phosphorane source and a trimethyl indium source to grow a first InP epitaxial layer on a preset substrate; turning off the trimethyl indium source, starting timing, and turning off the phosphine source if the timing duration reaches a first preset duration; opening an arsine source, a trimethyl indium source and a trimethyl gallium source to grow an InGaAs epitaxial layer on the first InP epitaxial layer at a growth rate as a first rate; the flow of the arsine source, the flow of the trimethyl indium source and the flow of the trimethyl gallium source are reduced, the InGaAs epitaxial layer continues to grow, the growth rate is a second rate, and the first rate is larger than the second rate; according to the method, the growth of the InGaAs epitaxial layer can be well realized on the first InP epitaxial layer.

The utility model relates to the technical field of electronic new material, provide a kind of MOCVD multi-machine MO source supply system, by setting up gas pipeline by nitrogen to MO source bottle form the TMG carrier gas carrying trimethyl gallium, trimethyl gallium passes through TMG carrier gas and enters the condenser in water tank by gas pipeline, part TMG carrier gas after condensation by condenser enters MOCVD machine platform by supply pipeline, so as to realize the supply of MO source to MOCVD machine platform, and the trimethyl gallium condensed into liquid is refluxed into MO source bottle by reflux pipeline and continues to use.Water tank is pumped by water pump by being communicated with machine platform sink, water tank is arranged in machine platform sink by overflow port, and water is arranged in machine platform sink, so as to realize the water circulation in water tank, to ensure that the water temperature in water tank reaches the requirement, the circulation of water tank water can be realized by the sink of MOCVD machine platform, energy consumption is reduced, and water flow indicator is arranged to observe and monitor water flow condition.

This invention discloses a high-crystal-quality light-emitting diode epitaxial wafer and its fabrication method. The method includes: after depositing a buffer layer on a substrate and before depositing a three-dimensional nucleation layer, performing a high-temperature recrystallization treatment on the buffer layer under low-pressure and high-temperature conditions in an atmosphere containing H2 and NH3 but without N2; subsequently, sequentially depositing a low-temperature three-dimensional nucleation layer, a three-dimensional nucleation transition layer, and a high-temperature three-dimensional nucleation layer in the same N2-free atmosphere; wherein the deposition process of the three-dimensional nucleation transition layer includes a gradual increase in deposition temperature and trimethylgallium flux with increasing deposition time. This invention, through buffer layer recrystallization treatment and the use of a "double-gradient" transition layer process to grow the three-dimensional nucleation layer in an N2-free atmosphere, effectively reduces N vacancies and GaN epitaxial layer defects, improves crystal quality, reduces leakage current, and enhances electrostatic breakdown resistance.

This invention discloses a light-emitting diode (LED) epitaxial wafer and its fabrication method, relating to the field of semiconductor process technology. The LED epitaxial wafer includes an electron blocking layer. The fabrication method includes: sequentially growing n AlGaN layers using ammonia, trimethylaluminum, and trimethylgallium as raw materials, and hydrogen and nitrogen as carrier gases, to prepare the electron blocking layer of the LED epitaxial wafer. The flow rates of the trimethylaluminum and ammonia gradually change with the increase of the number of AlGaN layers, and the flow rate of the trimethylaluminum changes in the opposite direction to that of the ammonia. This invention solves the technical problem in the prior art where the electron blocking layer introduces a large amount of impurities such as C and O, affecting the crystal quality of the electron blocking layer.

This invention belongs to the technical field of heterojunction bipolar transistors (HBTs), specifically relating to a HBT and its MOCVD epitaxial growth method. The HBT provided by this invention includes a transition layer disposed between the base region and the emitter layer. The MOCVD epitaxial growth method includes growing the transition layer on the surface of the base region using a linearly variable-temperature staged pulsed metal-organic chemical vapor deposition (MOCVD) method. During the total growth time of the linearly variable-temperature staged pulsed MOCVD method, PH3 is continuously introduced, and trimethylindium, trimethylgallium, and silane are introduced in single-cycle staged pulses. From the initial time T1 to the initial time TN, the reaction chamber temperature linearly increases from the base region growth temperature to the emitter layer growth temperature. The HBT obtained by the method provided by this invention has high gain, low sheet resistance, and high reliability.

To provide a method for producing an epitaxial film which can suppress mixing of H and C into an epitaxial film and increase in Si concentration distribution, a vapor phase growth device and an epitaxial film.SOLUTION: An n type β-Ga2O3 epitaxial film is grown by using a hot wall MOVPE method using an electric furnace for heating a reaction pipe made of SiO2, using trimethyl gallium (TMGa) as a Ga raw material, O2 gas as an O raw material and tetramethylsilane (TMSi) as a dopant of Si, under the conditions of a growth temperature of 950-1,100°C, and 1.0×10-7 to 1.0×10-3 RSi (wherein, RSi represents (supply amount of TMSi) / ((supply amount of TMSi)+(supply amount of TMGa)) in molar ratio).SELECTED DRAWING: Figure 1

The present application relates to the technical field of glass preparation, in particular to a bendable energy-saving glass for cold chain and a preparation method thereof. The glass comprises an ultrathin sodium-calcium glass substrate, and a silicon nitride barrier layer, a zinc oxide transition layer, a gallium-doped zinc oxide layer, a silver layer, a zinc oxide cover layer and a fluorine-doped tin oxide protective layer arranged on the substrate in sequence. The gallium-doped zinc oxide layer has a gallium-rich band on the side adjacent to the silver layer and contains tin-oxygen-gallium composite pinning sites. In the preparation, after forming the zinc oxide skeleton, trimethyl gallium post-pulse treatment is performed, and then anhydrous tin tetrachloride short pulse, hydrogen reduction stop, dry oxygen short pulse and water vapor sub-pulse treatment are performed in sequence, followed by deposition of the silver layer and the protective layer. The present application can improve the continuous film formation and interface stability of the silver layer, reduce the risk of silver layer migration, cracking and performance attenuation in cold bending and low-temperature high-humidity cycles, and is suitable for arc-shaped cold chain display cabinet doors.

The application provides a gallium nitride high-power device multilayer structure growth control method and system, relates to the technical field of semiconductors, and comprises sequentially epitaxially growing a nucleation layer, a transition layer and a gradient stress buffer layer group on a substrate, controlling the difference value of the lattice mismatch degree of the gallium aluminum nitride layer in the buffer layer to decrease by synchronously regulating the growth temperature and the trimethyl gallium flow, and dynamically determining the thickness of a gallium nitride insertion layer based on the accumulated elastic strain energy to release the strain. Then, a stress modulation layer composed of a gallium aluminum nitride superlattice with the aluminum component periodically fluctuating is grown, the periodic stress field of the stress modulation layer is used to block the upward extension of dislocation defects, and finally, a channel layer and a barrier layer are grown. The method can effectively reduce the defect density of the epitaxial layer and improve the performance and reliability of the gallium nitride high-power device.

The invention discloses a method for epitaxial growth of a gallium antimonide film crystal on the surface of gallium arsenide, and belongs to the technical field of synthesis of compound semiconductor materials. The method comprises the following steps: step 1, placing a gallium arsenide substrate wafer on a bracket in a crystal reaction furnace, and vacuumizing the crystal reaction furnace; 2, conveying argon to a crystal reaction furnace, and replacing air; step 3, conveying antimonane to a crystal reaction furnace, and driving argon in a furnace body with antimonane steam; 4, trimethyl gallium is conveyed to a crystal reaction furnace; step 5, heating the crystal reaction furnace to 480-500 DEG C, and reacting for 0.5-3 hours at the temperature of 480-500 DEG C; then raising the temperature to 850 to 870 DEG C, and reacting for 1 to 1.5 hours at the temperature; and step 6, gradually reducing the temperature of the crystal reaction furnace to room temperature, and taking out a product to obtain an epitaxial gallium antimonide thin film crystal finished product. According to the invention, the gallium antimonide crystal epitaxial layer with uniform thickness and good quality can be obtained on the gallium arsenide substrate at a low temperature in a short time.

The application discloses a GaN thin film and a preparation method and application thereof. The preparation method of the GaN thin film comprises the following steps: 1) taking an AlN ceramic target as raw material, and adopting a pulse laser deposition process to deposit an AlN thin film on a substrate; or, first depositing an AlN thin film on the substrate, and then taking metal Mo and sulfur powder as raw material, and adopting a magnetron sputtering process to deposit a MoS2 thin film on the AlN thin film; 2) taking trimethylgallium, trimethylaluminum and ammonia as raw material, and adopting an organic metal chemical vapor deposition process to deposit a GaN thin film on the AlN thin film or the MoS2 thin film. The GaN thin film is prepared by combining low-temperature PLD and high-temperature MOCVD, and has the advantages of simple operation, low cost, suitability for mass production and the like, and the prepared GaN thin film is smooth in surface, controllable in thickness, good in crystallization, uniform in growth, and suitable for large-scale application in the fields of photoelectronic and microelectronic.

The application discloses a production device and a production method of electronic-grade trimethylgallium, wherein the production device comprises a high-purity gallium-magnesium alloy feeder, a tertiary amine solvent storage tank, a rare gas storage tank, a synthesis kettle reactor, a halogenated alkane storage tank, a microfiltration filter, a vacuum rectifying tower, a high-temperature decomplexing kettle, a high-efficiency rectifying tower, a falling-film evaporator and a finished product receiving tank; the production method specifically comprises the following steps: (1) rare gas is introduced, high-purity gallium-magnesium alloy is added, tertiary amine solvent is added, stirring is carried out, and halogenated alkane is added drop by drop to carry out a synthesis reaction; (2) microfiltration; (3) vacuum rectification; (4) decomplexing; (5) secondary rectification; and (6) evaporation, and the electronic-grade trimethylgallium is obtained. The purity of the electronic-grade trimethylgallium prepared by the application is higher than 99.9999%, and the purity can reach 6N level or even higher; the operation is simple, the reaction is safe and stable, easy to control, the synthesis yield is high, the product loss is small, the technology is mature, no impurities are introduced, and the large-scale industrial production can be realized.

The invention discloses a light-emitting diode epitaxial wafer with high crystal quality and a preparation method thereof, and the method comprises the steps: carrying out the high-temperature recrystallization of a buffer layer in an atmosphere containing H2 and NH3 and not containing N2 under the conditions of low pressure and high temperature after the buffer layer is deposited on a substrate and before a three-dimensional nucleating layer is deposited; sequentially depositing a low-temperature three-dimensional nucleation layer, a three-dimensional nucleation transition layer and a high-temperature three-dimensional nucleation layer in the same atmosphere without N2; wherein the deposition process of the three-dimensional nucleation transition layer comprises the step that the deposition temperature and the trimethyl gallium flow are gradually increased along with the increase of the deposition time. According to the invention, through the recrystallization treatment of the buffer layer and the growth of the three-dimensional nucleating layer in the N2-free atmosphere by adopting the double-gradient transition layer process, the N vacancy and the GaN epitaxial layer defect are effectively reduced, the crystal quality is improved, the electric leakage is reduced, and the electrostatic breakdown resistance is improved.

The application discloses a method for growing GaN single crystal thin film on a gallium lanthanum silicate crystal substrate based on a MOCVD method, and is characterized by comprising the following steps: (1) putting the cleaned gallium lanthanum silicate crystal substrate into a metal organic chemical vapor deposition chamber, introducing a mixed gas of H2 and NH3 into a reaction chamber, heating to 1000-1200 DEG C, and keeping the pressure in the reaction chamber at 100-300 mbar to high-temperature treat the substrate for 3-8 min; (2) taking trimethyl gallium and NH3 as a gas source, and growing a low-temperature GaN nucleation layer on the gallium lanthanum silicate crystal substrate at a temperature of 400-600 DEG C; and (3) heating the reaction chamber to 900-1200 DEG C to grow a high-temperature GaN single crystal thin film on the low-temperature GaN nucleation layer, and the method has the advantages that the lattice mismatch and the thermal expansion coefficient mismatch are both low, and the GaN single crystal thin film has high quality.

A method for producing a crystalline film, in which a plurality of raw material gases are merged at a merging position to obtain a mixed gas containing trimethyl gallium, oxygen, and a silicon dopant in argon, the obtained mixed gas is heated from the merging position so that the temperature of the merging position is 850-1100 DEG C, the heated mixed gas is guided to the surface of a substrate (2), and the substrate (2) is subjected to heat treatment so that the temperature of the merging position is 850-1100 DEG C. A [beta]-gallium oxide crystal film is grown on the surface of a substrate (2).