Growth method of light emitting diode and light emitting diode

A technology of light-emitting diodes and growth methods, applied in the field of semiconductor lighting, can solve problems such as uneven LED light emission, uneven In distribution, and In precipitation, and achieve the effects of improving luminous brightness, improving electrostatic discharge ESD, and reducing driving voltage

Active Publication Date: 2020-01-31
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] When the AlGaN structure layer is grown at high temperature, it will affect the quantum well structure, such as causing uneven distribution of In in the quantum well...

Method used

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  • Growth method of light emitting diode and light emitting diode

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Experimental program
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Effect test

Embodiment 1

[0055] The light-emitting diode of this embodiment is obtained according to the following growth method:

[0056] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0057] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0058] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and ...

Embodiment 2

[0065] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0066] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0067] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and the N-type gallium nitride N-GaN layer with a thickness of 1000nm is grown;

[0068] 4. Control the tempera...

Embodiment 3

[0074] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0075] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0076] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and the N-type gallium nitride N-GaN layer with a thickness of 1000nm is grown;

[0077] 4. Control the tempera...

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Abstract

The invention provides a growth method of a light emitting diode and the light emitting diode. The growth method comprises the following steps: 1) nitrogen, ammonia, trimethylaluminum, trimethylgallium and trimethylindium are introduced into reaction equipment at 800-930 DEG C and 200Torr to grow a first AlxInyGa1-x-yN layer on a quantum well luminescent layer and then the introduction of nitrogen, ammonia, trimethylaluminum, trimethylgallium and trimethylindium is stopped; 2) hydrogen is introduced into the reaction equipment to enable the first AlxInyGa1-x-yN layer to be converted into a first AlxGa1-xN layer; and 3) the step 1) to the step 2) are cyclically performed for T times so as to obtain an electron barrier layer AlxGa1-xN, wherein 0 <x<1, 0<y<1 and x>y. The method is helpful togrow the high-quality electron barrier layer on the basis of no negative influence on the quantum well structure.

Description

technical field [0001] The invention relates to a growth method of a light-emitting diode and the light-emitting diode, belonging to the technical field of semiconductor lighting. Background technique [0002] In the process of making the electrodes of light-emitting diodes, in order to improve hole injection, prevent electrons from entering the P-type layer, and reduce leakage, it is necessary to grow a layer of AlGaN on the quantum well structure to block electrons, that is, the AlGaN electron blocking layer. However, during the AlGaN growth process, high temperature growth is required to achieve the required AlGaN crystal quality. [0003] When the AlGaN structure layer is grown at high temperature, it will affect the quantum well structure, such as causing uneven distribution of In in the quantum well structure, In precipitation and other problems, changing the original quantum well energy level structure, which will cause uneven LED light emission. and decrease in brig...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/14H01L33/32
Inventor 康建焦建军陈向东
Owner EPITOP PHOTOELECTRIC TECH
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