28results about How to "Improve luminous brightness" patented technology

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The present disclosure provides a light emitting diode with improved light emitting efficiency and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting diode comprises a first epitaxial layer, a second epitaxial layer, a connecting structure and a conductive structure; the first epitaxial layer, the connecting structure and the second epitaxial layer are sequentially stacked, the surface of the second epitaxial layer has a first groove extending to the connecting structure, the conductive structure is located at least in the surface of the connecting structure, the surface of the second epitaxial layer and the first groove, the conductive structure is electrically connected with the first epitaxial layer through the connecting structure, and the conductive structure is electrically connected with the second epitaxial layer. The present disclosure can increase the light emitting area of the light emitting diode, reduce the area loss of the high-voltage light emitting diode, realize the high-voltage light emitting diode with smaller size, and improve the light emitting efficiency.

This invention belongs to the field of optical component technology, and particularly relates to a light-emitting optical fiber, comprising a fiber core with an average refractive index of n0, and a microstructure cladding covering the fiber core. The microstructure cladding includes two phases, one of which is arranged in an array within the other phase. The two phases are a high-refractive-index phase and a low-refractive-index phase, respectively. The high-refractive-index phase has a refractive index of n1, and the low-refractive-index phase has a refractive index of n2. The refractive index n1 of the high-refractive-index phase is greater than the average refractive index n0 of the fiber core, and the refractive index n2 of the low-refractive-index phase is less than the average refractive index n0 of the fiber core. A first protective layer and a second protective layer are sequentially coated around the microstructure cladding. Compared to polymer fiber cores, the light-emitting optical fiber provided by this invention has better weather resistance, is less prone to aging, has higher mechanical strength, and a simpler fabrication process. It is more conducive to light emission within the optical fiber, has a smaller variance in luminous intensity, and achieves total internal reflection, thereby ensuring higher luminous brightness.

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a substrate, a first n-type nitride layer, a nitride control layer, a composite nanopillar structure layer, a nitride buffer layer, a second n-type nitride layer, a light-emitting layer, and a p-type nitride layer, stacked sequentially. The composite nanopillar structure layer includes a first nanopillar spacer unit and a second nanopillar spacer unit. The height of the first nanopillar spacer unit is greater than the height of the second nanopillar spacer unit. The first nanopillar spacer unit includes a first metal microstructure, a first nanopillar, and a first top unit. The second nanopillar spacer unit includes a second metal microstructure, a second nanopillar, and a second top unit. By adopting the solution provided by this invention, the probability of dislocation extension to the light-emitting layer is reduced, leakage channels are reduced, and radiative recombination is enhanced, thereby improving the brightness, leakage current, and ESD antistatic discharge performance of the epitaxial wafer.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

This application discloses a display panel and a display device. The display panel has a first display area and a second display area, wherein the light transmittance of the first display area is greater than that of the second display area. The display panel includes: a substrate; an isolation structure disposed on one side of the substrate and forming a first isolation opening in the first display area and a second isolation opening in the second display area; and a light-emitting unit including a first light-emitting structure layer disposed in the first isolation opening and a second light-emitting structure layer disposed in the second isolation opening. Two or more stacked first light-emitting structure layers are disposed in the same first isolation opening, and the number of first light-emitting structure layers in the first isolation opening is greater than the number of second light-emitting structure layers in the second isolation opening. The display panel disclosed in this application has a small brightness difference.

The utility model discloses an LED (light-emitting diode) light-transmitting mirror with high light-condensing efficiency, which comprises a lens body and a light-condensing column connected to the rear end of the lens body, the front end surface of the lens body is a light-emitting surface, and the rear end surface of the light-condensing column is a light-entering surface. The front end of the condensation column is composed of an upper boss, an extension column, a lower inclined plane and a lower boss which are sequentially connected from top to bottom, the rear end of the condensation column is a cylindrical body with the cross section gradually reduced from front to back, and the front end of the cylindrical body is connected with the tail end of the extension column. According to the utility model, the problem that the brightness cannot meet the requirement when the SMD-LED is used for the traffic display screen is effectively solved.

The application provides a traditional fluorescent aromatic phosphorus material with a pyrene imidazole structure. The material can ensure effective energy transmission, realizes simultaneous transmission of hole and electron carriers, is beneficial to design of a device and improvement of performance, can be used for preparing an ultra-low voltage driven high-efficiency traditional blue-violet light emitting device, has good thermodynamic stability, and significantly improves luminous efficiency and brightness of an organic electroluminescent material.

This application relates to a multi-chip light-emitting device and an illumination apparatus. The multi-chip light-emitting device includes a substrate, multiple light-emitting chips, a reflective structure, and an outer lens. The multiple light-emitting chips are disposed on the substrate and include a central chip and multiple peripheral chips, with the peripheral chips surrounding the central chip. The size of the central chip is larger than that of the peripheral chips. The reflective structure is disposed on the substrate and has multiple reflective cavities, each corresponding to one of the multiple light-emitting chips, and is used to reflect the lateral light emitted by the light-emitting chips in a direction away from the substrate. The light-emitting ports of adjacent reflective cavities share a common edge. The outer lens is disposed on the substrate and corresponds to the multiple reflective cavities. This multi-chip light-emitting device designs the reflective structure based on the light-emitting chips and the outer lens based on the reflective structure. Due to the small size of the light-emitting chips, the volume of the outer lens is significantly reduced, resulting in a significant reduction in the overall size of the device and a smaller footprint.

The utility model discloses an LED packaging device, and the device comprises a pedestal which is provided with a die bonding region; the light-emitting chip is fixedly arranged in the die bonding area; the reflecting layer is arranged on the base, and the height of the reflecting layer is smaller than that of the light-emitting chip; a preset gap is formed between the reflecting layer and the light-emitting chip, and the size of the preset gap is gradually increased in the direction away from the die bonding area; the light-transmitting layer surrounds the light-emitting chip and is arranged in the preset gap in a filling manner; and the packaging adhesive layer is arranged above the base and covers the light-emitting chip, the reflecting layer and the light-transmitting layer. The height of the reflecting layer is lower than that of the light-emitting chip, and a gap is formed between the reflecting layer and the side surface of the light-emitting chip, so that emergent light at the side part of the light-emitting chip can pass through the reflecting layer to be directly emitted and can also be projected to the reflecting layer to be reflected outwards through the reflecting layer, and the emergent light utilization rate of the light-emitting chip is greatly improved; therefore, the luminance of the LED packaging device is effectively improved.

The invention provides a triarylamine compound containing a benzimidazole structure and an organic electroluminescent device, and relates to the technical field of organic photoelectric materials. When the triarylamine compound is applied to the organic electroluminescent device as a main body material, the driving voltage of the organic electroluminescent device can be reduced, the luminous efficiency and brightness of the organic electroluminescent device can be improved, and the service life of the organic electroluminescent device can be prolonged.

The invention discloses an electrode reflection structure and a preparation method thereof, and the method comprises the steps: preparing a photoresist first chamfer and an undercut with a preset length on a transparent conductive layer, vacuumizing an operation environment to 10 <-6 > Torr or above, and sequentially carrying out the evaporation of a metal adhesion layer and a metal reflection layer on the transparent conductive layer; evaporating a Ti stress buffer layer on the metal reflecting layer, then evaporating a Pt barrier layer on the Ti stress buffer layer, and controlling the thickness of the Ti stress buffer layer to be at least 1.5 times greater than the thickness of the Pt barrier layer to form a Ti / Pt metal barrier layer; and evaporating a covering layer on the outer surface of the Ti / Pt metal barrier layer to complete the preparation of the electrode reflection structure. On the premise that the design size of the electrode is not changed, shielding and absorption of the electrode to emergent light of the chip are effectively reduced, the probability that photons escape from the active layer is improved, therefore, the brightness of the LED chip is improved, and meanwhile the stability and long-term reliability of the electrode structure are considered.

The application relates to a semiconductor structure preparation method, a micro device transfer method and a display panel. The semiconductor structure preparation method comprises the following steps: providing a first temporary substrate; forming a sacrifice layer on the surface of the first temporary substrate, the sacrifice layer having a plurality of spaced-apart openings; forming a weakening structure in the openings; providing a substrate, the surface of the substrate having a plurality of micro devices; bonding the micro devices and the weakening structures, the micro devices and the weakening structures corresponding to each other; removing the substrate to expose the light-emitting surface of the micro device; after removing the substrate, the light-emitting surface of the micro device has residual metal; removing the residual metal and removing the sacrifice layer to release the weakening structure. In the premise of not damaging the weakening structure, the residual metal and the sacrifice layer are removed at the same time in one step, so that the weakening structure is released, cost is saved, process complexity is reduced, the light-emitting efficiency of the light-emitting surface of the micro device is improved, and the transfer difficulty of the micro device moving to the back plate is reduced.

The invention relates to the technical field of LEDs, in particular to an electrode contact hole forming method for manufacturing a flip LED chip and the flip LED chip. According to the method, in the process step of forming an electrode opening, an insulating layer is coated with positive photoresist, exposure is carried out, then baking is carried out for 80-90 seconds at the temperature of 110-112 DEG C, then developing is carried out, then a developed photoresist pattern is used as a mask, and wet etching is carried out by using a BOE solution so as to form an electrode contact hole with a steep side wall. The baking and developing sequence and specific parameters in the photoetching process are adjusted, so that the side wall angle of a photoresist pattern serving as a corrosion mask is increased, and the side wall angle of an opening formed by BOE corrosion is guided to be remarkably increased to about 27.6 degrees from about 16.8 degrees of a conventional method. The steep opening morphology enables the metal wiring layer above to be in smooth transition and avoid fracture, so that the size of an active area (MESA) is reduced, the light-emitting area is increased and the brightness of a chip is improved on the premise that the reliability is not influenced.

This invention provides a flexible backplate processing device for improving the uniformity of curved backlighting, belonging to the field of display technology. It includes a processing device, with a traveling carriage slidably connected to its top. A first hydraulic rod is fixedly connected to the inner wall of the traveling carriage, and a first fixed frame is fixedly connected to the top of the first hydraulic rod. A first sliding frame and a second sliding frame are slidably connected to the outer surface of the first fixed frame. A second hydraulic rod is fixedly connected to the top surface of the processing device, and a clamping mechanism is provided at the output end of the second hydraulic rod. A support mechanism is provided at the top of the clamping mechanism. This invention improves the overall light emission uniformity of the backlight by setting up a support mechanism and creating a first V-shaped groove with an asymmetrical slope in the central area; and by setting a second V-shaped groove with stepped sections in the left and right transition areas to increase the light emission radiation range, thereby improving the overall light emission uniformity of the backlight of the support plate.

The utility model discloses a working head for a screwdriver, which comprises a main machine shell, an output shaft rotationally connected with the main machine shell is arranged in the main machine shell, and a working head body synchronously rotating with the output shaft is mounted on the output shaft; the working head body is rotationally connected with the main machine shell, a shaft sleeve is arranged between the working head body and the main machine shell, and a sealing piece is installed on the shaft sleeve. A lamp ring assembly coaxial with the working head body is arranged outside the main machine shell, the lamp ring assembly comprises an annular lamp ring body and a lampshade, the annular lamp ring body is arranged in the lampshade, and the lampshade is detachably connected with the main machine shell. The sealing element is arranged in the shaft sleeve of the main machine shell, so that the sealing effect is good; the annular lamp ring body is arranged on the outer layer of the host shell, the annular lamp ring body is controlled to emit light through the circuit board, the brightness is high, and the irradiation range is wide.

One side, far away from a substrate, of a first insulating dielectric layer and one side, far away from the substrate, of an etching groove, of a second insulating dielectric layer are etched, in the etching process, the medium consumption rate of the side wall of a light-emitting unit is different from the medium consumption rate of the bottom face of the etching groove, and after the etching is completed, the light-emitting unit is not damaged. The first semiconductor layer on the bottom surface of the etching groove is at least exposed, the second insulating dielectric layer on the side wall of the second semiconductor layer and the side wall of the light-emitting layer is reserved, and a photoetching step is not needed in the patterning process of the second insulating dielectric layer, so that on one hand, the process steps for preparing the light-emitting chip can be reduced, and the preparation process flow is simplified. And on the other hand, the photoetching step is not carried out, so that the size of the etching groove of the adjacent light-emitting unit does not need to be set to be too large, correspondingly, the area of the light-emitting unit can be large, the light-emitting unit with the large size is formed in the small chip, and it is guaranteed that the light-emitting chip has large light-emitting brightness.

The present disclosure provides a light emitting diode and a light emitting diode preparation method. The light emitting diode comprises a first epitaxial structure, a second epitaxial structure, a first insulating reflective layer, a connecting electrode and a second insulating reflective layer; the first epitaxial structure and the second epitaxial structure each comprise a step structure, the step structure comprising a step top surface and a step bottom surface; the first epitaxial structure and the second epitaxial structure are arranged at intervals; the first insulating reflective layer is located in an isolation groove between the first epitaxial structure and the second epitaxial structure, and one side of the surface of the first insulating reflective layer is connected to the step bottom surface of the first epitaxial structure, and the other side of the surface of the first insulating reflective layer is connected to the step top surface of the second epitaxial structure; the connecting electrode is located on the first insulating reflective layer and is electrically connected to the step bottom surface of the first epitaxial structure and the step top surface of the second epitaxial structure, respectively; and the second insulating reflective layer covers the connecting electrode, the first insulating reflective layer, the first epitaxial structure and the second epitaxial structure.

A light-emitting element, a method for manufacturing a light-emitting element, and a display device including a light-emitting element are provided. The light-emitting element includes a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an electrode layer provided over the second semiconductor layer; an insulating structure provided over the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer; and an insulating film surrounding side surfaces of the first semiconductor layer, side surfaces of the light-emitting layer, and side surfaces of the second semiconductor layer.

The organic light emitting display device may include: a plurality of anode electrodes on a plurality of sub-pixels; a plurality of organic light emitting layers on the plurality of anode electrodes; a plurality of cathode electrodes on the plurality of organic light emitting layers; a plurality of inorganic insulating layers on the plurality of cathode electrodes; a plurality of first protrusions disposed between the plurality of sub-pixels in the first direction and having a plurality of first undercut structures on a side portion; the plurality of first waterproof structures are located on the plurality of first protruding parts; and a plurality of second waterproof structures located at the plurality of first undercut structures of the plurality of first protrusions. The first waterproof structure is formed by overlapping at least two or more inorganic insulating layers among the plurality of inorganic insulating layers on the first protruding portion.

The application relates to the field of inkjet printing technology and discloses quantum dot ink and an electroluminescent device. The quantum dot ink comprises quantum dots and mixed polar solvents. The quantum dots comprise quantum dot bodies and organic chain segments connected to the surfaces of the quantum dot bodies, and the organic chain segments are linked with functional groups soluble in polar solvents. The mixed polar solvents comprise multiple polar solvents. The functional groups soluble in polar solvents are connected to the surfaces of the quantum dot bodies, so that the quantum dots can be dissolved in polar solvents. When the ink is printed on a TFB layer, the ink is compatible with the TFB layer, the interface compatibility between a quantum dot light-emitting layer formed after the ink is solidified and the TFB layer is high, the film surface of an electroluminescent device prepared by the application is uniform, and the electrical performance of the light-emitting layer formed by the ink is improved by adding zinc halide as an additive in the ink, so that the luminous brightness of the electroluminescent device is improved.

The utility model relates to a head-up display system. The head-up display system comprises a backlight module, a display panel and a polarizing element. The backlight module comprises a substrate and a plurality of LED light sources, the LED light sources are arranged on the substrate, and each LED light source is an integrated lens light source. The display panel is obliquely arranged relative to the backlight module. The polarizing element is arranged between the backlight module and the display panel and used for deflecting normal light in light emitted by the LED light source or refracting normal light emitted by the deflected LED chip to form emergent light irradiated to the display panel in the preset direction. The polarization element is arranged to deflect the normal light of the LED light source or refract the normal light of the deflected LED chip, so that the emergent light of the polarization element irradiates the display panel in the preset direction, and the light intensity of the normal emergent light of the LED light source or the LED chip is higher than that of the corresponding lateral light. The emergent light formed after deflection can obviously improve the luminance of the display panel.

This application provides a display panel and a display device. The display panel includes: a substrate, a first electrode layer, a pixel definition layer, and a light-emitting functional layer. The first electrode layer is disposed on one side of the substrate and includes a plurality of first electrodes, including a light-reflecting electrode and a light-transmitting electrode. The pixel definition layer is disposed on one side of the substrate and includes a pixel defining portion and a pixel opening. Each first electrode is exposed through the pixel opening, which includes a first pixel opening and a second pixel opening. The light-emitting functional layer includes light-emitting structures located in the first pixel opening and the second pixel opening, respectively. The first electrode includes a first sub-electrode corresponding to the first pixel opening and a second sub-electrode corresponding to the second pixel opening. The light-reflecting electrode can reflect the light emitted by the light-emitting structure and cooperate with the cathode to form an optical microcavity structure, thereby improving the brightness and performance of the display panel. The equal thickness of the light-transmitting electrode film of the first sub-electrode and the second sub-electrode simplifies the manufacturing process.

The application provides a semi-coated fluorescent glass as well as a preparation method and application thereof. Metal oxide heat-conducting glass layers are coated on the outer ring and the bottom surface of the fluorescent glass. Under excitation of high-power blue laser, the heat accumulated on the fluorescent glass can be quickly transferred to the outside or a heat-conducting accessory through the outer ring metal oxide heat-conducting glass ring and the bottom surface metal oxide heat-conducting glass layer, so that the heat dissipation efficiency of the fluorescent glass during work is effectively improved, and higher luminous brightness and luminous efficiency are achieved. The semi-coated fluorescent glass can be excited by blue laser to realize a high-brightness fluorescent laser light source, and application requirements of new laser lighting and display products can be met.

The application provides an LED epitaxial structure and a preparation method thereof. The LED epitaxial structure comprises, from bottom to top, a bottom buffer layer on a substrate, an etching stop layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer. The second-type semiconductor layer comprises, from bottom to top, an electron blocking layer, a second waveguide layer, a second-type confinement layer, a transition layer, a second-type window layer and a second-type ohmic contact layer. The electron blocking layer is a periodic structure formed by alternately growing a first blocking layer and a second blocking layer. The Al component of the first blocking layer in each period is higher than that of the first blocking layer in the previous period, and the Al component of the second blocking layer in each period is lower than that of the second blocking layer in the previous period. The electron blocking layer designed in the application is in a ladder type, which is beneficial to electron confinement and hole injection, thereby increasing the radiation recombination rate in the active layer and improving the light-emitting efficiency and brightness of the LED.

The invention discloses an HEMT integrated light-emitting chip and a preparation method thereof, an epitaxial wafer and a display backboard, the HEMT integrated light-emitting chip comprises an N-type semiconductor layer, an intrinsic semiconductor layer, a first quantum well layer and a second quantum well layer which are stacked in sequence from bottom to top, the first quantum well layer and the second quantum well layer are different in light-emitting color, and the energy band widths of the first quantum well layer and the second quantum well layer are reduced in sequence; the second quantum well layer is arranged on the second light-emitting area on the first quantum well layer, barrier layers and P-type semiconductor layers which are stacked in sequence are arranged on the first light-emitting area on the first quantum well layer and the second quantum well layer, and source electrodes are correspondingly arranged on the P-type semiconductor layers; each barrier layer is provided with a grid electrode which is arranged at an interval with the P-type semiconductor layer; the N-type semiconductor layer is provided with a common drain electrode which is connected with the N-type semiconductor layer and penetrates through the electrode hole. The HEMT integrated light-emitting chip manufactured through the method is more compact in structure, high in dimming capacity and higher in light-emitting efficiency, and single-color and double-color display is achieved.

The invention discloses an HEMT integrated light-emitting chip and a preparation method thereof, an epitaxial wafer and a display backboard, and the method comprises the steps: providing an HEMT integrated epitaxial wafer, the HEMT integrated epitaxial wafer comprises a three-color quantum well lamination layer, the three-color quantum well lamination layer comprises an original first quantum well layer, an original second quantum well layer and an original third quantum well layer, and the original first quantum well layer, the original second quantum well layer and the original third quantum well layer are stacked in sequence, and the energy band widths of the original first quantum well layer, the original second quantum well layer and the original third quantum well layer are reduced in sequence; etching the three-color quantum well laminated layer to form a first quantum well layer, a second quantum well layer laminated on the first quantum well layer and a third quantum well layer laminated on the second quantum well layer; sequentially growing and etching a barrier layer and a P-type semiconductor layer to form the barrier layer and the P-type semiconductor layer corresponding to each quantum well, and etching an electrode hole; and growing an electrode layer and etching to form a corresponding source electrode, a drain electrode and a common drain electrode. According to the HEMT integrated light-emitting chip and the preparation method thereof, the HEMT structure is utilized to prepare two-dimensional electron gas in the well, the electron migration efficiency is greatly improved, and single-color, double-color and three-color display can be achieved.