90results about How to "Improve luminous brightness" patented technology

The invention provides a display chip, a display device and a preparation method thereof, and the display chip comprises an epitaxial layer which comprises a first semiconductor layer, a quantum well light-emitting layer and a second semiconductor layer, the first reflecting layer is positioned on one side, deviating from the first semiconductor layer, of the second semiconductor layer; the first metal binding layer is located on the side, away from the epitaxial structure, of the first reflecting layer; the heat dissipation layer comprises a first heat dissipation layer and / or a second heat dissipation layer, the first heat dissipation layer is located between the epitaxial structure and the first reflection layer, the second heat dissipation layer is located on the side, away from the epitaxial structure, of the first reflection layer, and the second heat dissipation layer is provided with a first opening exposing the first reflection layer; the first metal binding layer is arranged on the side, away from the first reflecting layer, of the second heat dissipation layer and fills the first opening. The heat dissipation performance of the display chip can be improved.

The invention discloses a dinaphtho boron oxygen structure derivative and a preparation method and application thereof, and belongs to the technical field of organic light-emitting materials and semiconductors. The dinaphtho boron oxygen structure derivative has the advantages of easily available reaction raw materials, low price, conventional reaction process, high single-step reaction yield and low cost. When the prepared dinaphtho-boron-oxygen structure derivative is applied to a light-emitting layer of an OLED device as a guest light-emitting material, the roll-off efficiency of the device can be effectively reduced, the light-emitting brightness is improved, and the service life of the device is prolonged.

The invention discloses a light source assembly, a backlight module, a display module and a display device. The light source assembly of one embodiment comprises a driving plate and a lamp set which is arranged on the surface of one side of the driving plate, electrically connected with the driving plate and extends in the first direction, the driving plate comprises a first substrate layer, a conductive layer connected with the lamp set and a signal leading-out part electrically connected with the conductive layer, and the signal leading-out part extends in the second direction perpendicular to the first direction; the lamp set comprises a plurality of lamp wicks arranged in the first direction. The light source assembly further comprises a bonding layer, the bonding layer comprises a first edge part and a second edge part which extend in the first direction, and the first edge part is farther from the signal leading-out part than the second edge part. The bonding layer is provided with a first opening at the position of each wick, the first opening comprises a first boundary and a second boundary which extend along the first direction, the first boundary is farther from the signal leading-out part than the second boundary, and the second boundary comprises a convex part far away from the direction of the first boundary.

The invention provides a display panel, a preparation method thereof and a display device, and relates to the technical field of display. The display panel includes: a driving substrate; a plurality of light-emitting elements located on one side of the driving substrate; the color filter layer is positioned on one side of the light-emitting element; the color filter layer comprises a plurality of filter structures with different colors; the micro-lens array is positioned on one side of the color filter layer; the micro-lens array comprises micro-lenses arranged corresponding to the filtering structures; the micro lens comprises a first curvature surface and a second curvature surface which are opposite to each other; the curvature radius of the first curvature surface is smaller than that of the second curvature surface; and in the corresponding micro lens and the filtering structure, the curvature radius of the second curvature surface of the micro lens is in positive correlation with the wavelength of the light transmitted by the filtering structure. According to the technical scheme, light penetrating through the micro lenses can be gathered towards one side, the display brightness of the display panel is improved, and the color cast problem of the display panel is solved.

The invention discloses an energy storage type advertisement painting light-emitting film, and relates to the technical field of light-emitting films, the energy storage type advertisement painting light-emitting film comprises a base material layer, and a light-emitting layer and an ink-jet layer which are fixedly arranged at one end of the base material layer in sequence; the light-emitting layer is a first mixed layer formed by uniformly mixing adhesive liquid and a plurality of groups of light-emitting particles; the light-emitting particles comprise phosphor particles and coating layers fixedly arranged outside the phosphor particles, and the coating layers are silicon dioxide layers; the method has the advantages that the phosphor particles are adopted as the light energy storage material, a good long afterglow effect and a high-efficiency conversion effect can be provided, the phosphor particles are provided with the coating layers in advance in the modes of precipitation coating and the like, and then the coating layers are mixed with the adhesion liquid, so that agglomeration can be reduced, and the luminous efficiency and the brightness can be improved; the arranged adhesive liquid can improve the absorption efficiency and dispersion uniformity of the luminous particles and the adhesive strength of the substrate layer; and the protective layer covers the light-emitting layer and the ink-jet layer, so that the protectiveness is improved.

The invention provides a display panel and a manufacturing method thereof and a display device, and relates to the technical field of display, the display panel and the display device comprise a substrate, a driving layer arranged on one side of the substrate, and a light-emitting element and a retaining wall which are arranged on one side, away from the substrate, of the driving layer; the retaining walls are at least located between the adjacent light-emitting elements. The display panel further comprises a first reflecting layer and a second reflecting layer. The first reflecting layer is located on the side, facing the driving layer, of the epitaxial layer of the light-emitting element. The second reflecting layer is located on the side wall, facing the light-emitting element, of the retaining wall, and / or the second reflecting layer is located on the side wall of the light-emitting element. By introducing the first reflecting layer and the second reflecting layer, light rays which are emitted by the light-emitting element and cannot be emitted to the light-emitting surface of the display panel originally can be reflected, so that the light rays are emitted to the light-emitting surface of the display panel, the actual brightness of the light-emitting element can be improved, and the overall display brightness of the display panel can be improved.

The invention discloses a pixel structure for improving the brightness of a light-emitting element and prolonging the service life of the light-emitting element, which comprises a substrate, the substrate is provided with a plurality of light-emitting pixel areas, and each light-emitting pixel area is internally provided with a red light-emitting pixel point, a blue light-emitting pixel point and a green light-emitting pixel point, the red light-emitting pixel points and the green light-emitting pixel points are of organic light-emitting structures, and the blue light-emitting pixel points are of quantum dot light-emitting structures. The problems that the luminance, efficiency, service life and other properties of an existing blue OLED still need to be improved, and the service life is affected by the luminous efficiency in the blue OLED are solved.

The present application discloses a display panel and a display device, wherein the display panel includes a substrate and a light-emitting element layer, wherein the light-emitting element layer is formed on one side of the substrate and includes a plurality of pixels, wherein each pixel includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, wherein any two of the red sub-pixels, the green sub-pixels and the blue sub-pixels are arranged adjacent to each other, wherein the red sub-pixel includes a receiving cavity, wherein the blue sub-pixel and the green sub-pixel are at least partially received in the receiving cavity, and wherein the areas of the blue sub-pixel and the green sub-pixel are both smaller than the area of ​​the red sub-pixel. The display panel provided by the present application improves the luminous brightness of the red sub-pixel, and at the same time makes the color mixing effect of the red sub-pixel, the green sub-pixel and the blue sub-pixel better, thereby improving the display effect of the display panel.

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The present disclosure provides a light emitting diode with improved light emitting efficiency and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting diode comprises a first epitaxial layer, a second epitaxial layer, a connecting structure and a conductive structure; the first epitaxial layer, the connecting structure and the second epitaxial layer are sequentially stacked, the surface of the second epitaxial layer has a first groove extending to the connecting structure, the conductive structure is located at least in the surface of the connecting structure, the surface of the second epitaxial layer and the first groove, the conductive structure is electrically connected with the first epitaxial layer through the connecting structure, and the conductive structure is electrically connected with the second epitaxial layer. The present disclosure can increase the light emitting area of the light emitting diode, reduce the area loss of the high-voltage light emitting diode, realize the high-voltage light emitting diode with smaller size, and improve the light emitting efficiency.

The invention provides a BODIPY light-caged chemiluminescent molecule. The structure of the BODIPY light-caged chemiluminescent molecule is shown as a formula (I): # imgabs0 # (I), wherein the number of the imgabs is 1 #. The BODIPY light-caged chemiluminescence molecule can generate a chemiluminescence signal under an illumination condition, the luminescence process is simple to operate, and the BODIPY light-caged chemiluminescence molecule has the characteristics of high luminescence brightness and good chemical stability. Based on the BODIPY light-caged chemiluminescent molecule, the invention also provides a method for synthesizing the BODIPY light-caged chemiluminescent molecule, and an application of the BODIPY light-caged chemiluminescent molecule in chemiluminescence immunoassay. The invention also provides a BODIPY light-caged chemiluminescent nano-microsphere, and the BODIPY light-caged chemiluminescent molecule Bsa-CPMs is loaded in the polystyrene nano-microsphere PS by adopting a swelling method. The invention further provides a preparation method of the BODIPY light-caged chemiluminescent nano-microsphere. The invention also provides an application of the BODIPY light cage chemiluminescence nano-microsphere in chemiluminescence immunoassay.

The application relates to the technical field of semiconductor devices, and discloses a Micro-LED display chip and a preparation method thereof. The Micro-LED display chip comprises a substrate, a plurality of LED light-emitting units, a planarization layer and a conductive reflection wall. The LED light-emitting unit comprises a first doped semiconductor layer, an active layer and a second doped semiconductor layer, and at least the first doped semiconductor layer and the active layer are processed into an LED mesa. A channel is formed between adjacent LED mesas. The planarization layer is located between the LED light-emitting unit and the substrate, and the planarization layer is bonded to the substrate. The planarization layer is filled in the channel and covers the LED mesa. The planarization layer has a groove corresponding to the channel. The conductive reflection wall is arranged in the groove and surrounds the LED mesa. The application can improve the light-emitting efficiency and brightness of the LED light-emitting unit in the main light-emitting angle, thereby improving the light-emitting efficiency and brightness of the Micro-LED display chip.

The present application discloses a display module and a display device, wherein the display module includes a light-emitting unit and a driving circuit, wherein the driving circuit includes a controller, a control chip, a detection module and a compensation feedback module, wherein the output end of the control chip includes a plurality of output channels, each of which is connected in series with a row of lamp beads, wherein the detection module is connected to the plurality of output channels, receives the driving current output by the controller, and detects whether the lamp beads in the light-emitting unit are abnormal; wherein the compensation feedback module is connected to the detection module and the controller, and when the detection module detects an abnormal lamp bead, the compensation feedback module notifies the controller to turn off or reduce the driving current of the output channel corresponding to the abnormal lamp bead, and at the same time increases the driving current of the output channel corresponding to the row of lamp beads adjacent to the abnormal lamp bead. Through the above design, the display problem of dark spots or dark lines that occurs when the LED is abnormal can be improved.

This invention belongs to the field of optical component technology, and particularly relates to a light-emitting optical fiber, comprising a fiber core with an average refractive index of n0, and a microstructure cladding covering the fiber core. The microstructure cladding includes two phases, one of which is arranged in an array within the other phase. The two phases are a high-refractive-index phase and a low-refractive-index phase, respectively. The high-refractive-index phase has a refractive index of n1, and the low-refractive-index phase has a refractive index of n2. The refractive index n1 of the high-refractive-index phase is greater than the average refractive index n0 of the fiber core, and the refractive index n2 of the low-refractive-index phase is less than the average refractive index n0 of the fiber core. A first protective layer and a second protective layer are sequentially coated around the microstructure cladding. Compared to polymer fiber cores, the light-emitting optical fiber provided by this invention has better weather resistance, is less prone to aging, has higher mechanical strength, and a simpler fabrication process. It is more conducive to light emission within the optical fiber, has a smaller variance in luminous intensity, and achieves total internal reflection, thereby ensuring higher luminous brightness.

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

The invention relates to the technical field of semiconductors, and discloses an LED epitaxial wafer for ultra-large current and a preparation method thereof, the LED epitaxial wafer comprises a substrate, and an AlN layer, a buffer layer, a first GaN layer, a second GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron barrier layer and a P-type GaN layer are sequentially arranged on the substrate; the stress release layer is of a periodic structure, each periodic structure comprises a third GaN layer, an In < x > Ga < 1-x > N layer and an Al < y > Ga < 1-y > N layer which are stacked in sequence, the third GaN layer, the In < x > Ga < 1-x > N layer and the Al < y > Ga < 1-y > N layer are subjected to recrystallization treatment after growth, and the recrystallization treatment is carried out in the atmosphere of N2 and NH3 at the temperature higher than or equal to 800 DEG C. By implementing the LED epitaxial wafer, stress can be released, the growth quality of the multi-quantum well layer is improved, and the luminous efficiency is ensured. Meanwhile, the working voltage of the LED chip under the ultra-large current can be reduced, and the luminance and the reliability are improved.

This application discloses an LED chip, relating to the field of light-emitting diode technology. In this LED chip, the epitaxial stack on the substrate includes a stacked first type semiconductor layer, an active layer, and a second type semiconductor layer. The epitaxial stack has a first groove and a second groove. The first groove penetrates the second type semiconductor layer and the active layer, and exposes a portion of the first type semiconductor layer to provide a first electrode. The second groove penetrates at least a portion of the second type semiconductor layer and is covered by a current blocking layer. A second electrode is provided on the side of the current blocking layer away from the substrate. The second electrode mainly injects current through a current spreading layer. In this way, at least a portion of the epitaxial stack below the second electrode is etched into the second groove, and the current blocking layer below the second electrode covers and passivates the second groove. This reduces the light emission of the active layer below the second electrode and also reduces the light absorption of the epitaxial stack below the second electrode, thereby improving the luminous efficiency and brightness of the LED chip.

The invention provides an LED chip preparation method and an LED chip, and the method comprises the steps: carrying out the MSA etching of a GaN epitaxial layer, specifically, the MSA etching is divided into two times of etching: firstly introducing Cl2 to etch the GaN epitaxial layer until a part of an N-type GaN layer is exposed, and then introducing SiCl4 gas to carry out the etching; the etched wafer is put into a BOE solution to be soaked, and then cleaning is carried out; patterning the photoresist of the cleaned wafer through a yellow light process, and exposing an area, which needs to be evaporated with metal, on the wafer; placing the wafer after the yellow light process in an oxygen plasma cleaning machine, and removing residual glue on the surface of the wafer after development; according to the method, the wafer with the adhesive residue removed is fully cleaned with deionized water, then a metal electrode is evaporated on the area, where metal needs to be evaporated, of the wafer, an N electrode metal layer is obtained, and through the technology, the contact resistance of the metal electrode and the N-type GaN layer can be further reduced, and meanwhile the light emitting brightness of an LED chip is improved.

The invention, which relates to the photoelectric display field, discloses a double-current-gate regulation light-emitting device comprising a first surface gate, a first electron transport layer, a first surface electrode layer, a second electron transport layer, a light-emitting composite layer, a second hole transport layer, a second surface electrode layer, a first hole transport layer, and a second surface gate. A first bias power supply is applied to the first surface grid and the first surface electrode layer, and a second bias power supply is applied to the second surface grid and the second surface electrode layer; a driving signal is applied between the first surface electrode layer and the second surface electrode layer and is used for driving hole-electrons to be compounded on the light-emitting composite layer and emitting light; the first configuration power supply and the second configuration power supply can regulate and control the electron hole migration amount in the light-emitting composite layer. According to the invention, the current gate structures are additionally arranged on two sides of a traditional light-emitting device, so that the problem of imbalance of electron carrier mobility and hole carrier mobility in the light-emitting composite layer can be effectively solved, the electron-hole light-emitting composite energy efficiency is effectively improved, and meanwhile, the light-emitting brightness and the light-emitting efficiency can be optimized at the same effect.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a substrate, a first n-type nitride layer, a nitride control layer, a composite nanopillar structure layer, a nitride buffer layer, a second n-type nitride layer, a light-emitting layer, and a p-type nitride layer, stacked sequentially. The composite nanopillar structure layer includes a first nanopillar spacer unit and a second nanopillar spacer unit. The height of the first nanopillar spacer unit is greater than the height of the second nanopillar spacer unit. The first nanopillar spacer unit includes a first metal microstructure, a first nanopillar, and a first top unit. The second nanopillar spacer unit includes a second metal microstructure, a second nanopillar, and a second top unit. By adopting the solution provided by this invention, the probability of dislocation extension to the light-emitting layer is reduced, leakage channels are reduced, and radiative recombination is enhanced, thereby improving the brightness, leakage current, and ESD antistatic discharge performance of the epitaxial wafer.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

This application discloses a display panel and a display device. The display panel has a first display area and a second display area, wherein the light transmittance of the first display area is greater than that of the second display area. The display panel includes: a substrate; an isolation structure disposed on one side of the substrate and forming a first isolation opening in the first display area and a second isolation opening in the second display area; and a light-emitting unit including a first light-emitting structure layer disposed in the first isolation opening and a second light-emitting structure layer disposed in the second isolation opening. Two or more stacked first light-emitting structure layers are disposed in the same first isolation opening, and the number of first light-emitting structure layers in the first isolation opening is greater than the number of second light-emitting structure layers in the second isolation opening. The display panel disclosed in this application has a small brightness difference.

The utility model discloses an LED (light-emitting diode) light-transmitting mirror with high light-condensing efficiency, which comprises a lens body and a light-condensing column connected to the rear end of the lens body, the front end surface of the lens body is a light-emitting surface, and the rear end surface of the light-condensing column is a light-entering surface. The front end of the condensation column is composed of an upper boss, an extension column, a lower inclined plane and a lower boss which are sequentially connected from top to bottom, the rear end of the condensation column is a cylindrical body with the cross section gradually reduced from front to back, and the front end of the cylindrical body is connected with the tail end of the extension column. According to the utility model, the problem that the brightness cannot meet the requirement when the SMD-LED is used for the traffic display screen is effectively solved.

The application provides a traditional fluorescent aromatic phosphorus material with a pyrene imidazole structure. The material can ensure effective energy transmission, realizes simultaneous transmission of hole and electron carriers, is beneficial to design of a device and improvement of performance, can be used for preparing an ultra-low voltage driven high-efficiency traditional blue-violet light emitting device, has good thermodynamic stability, and significantly improves luminous efficiency and brightness of an organic electroluminescent material.

The present invention discloses a semiconductor light-emitting element, comprising a semiconductor epitaxial stack, having a first surface and a second surface opposite thereto, comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer located therebetween; a through hole, at least penetrating the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer; an electrical connection structure, arranged in the through hole, extending to the first surface of the first conductive semiconductor layer, and forming an electrical connection with the first conductive semiconductor layer; a first electrode metal layer, arranged on the second surface of the semiconductor epitaxial stack, and connected to the electrical connection structure; characterized in that: at least one section of the through hole exposes the first conductive semiconductor layer, and the angle between the side wall of the first section of the through hole and the first surface is θ1, 0°<θ1≤90°. The present invention can improve the uniformity of current expansion, and enhance the uniformity of luminous brightness and luminous efficiency of the semiconductor light-emitting element.

The present invention belongs to the technical field of inkjet printing, and specifically discloses a method for preparing a stable fluorescent PeQD ink suitable for EHD inkjet printing, comprising the following steps: (1) preparing a Cs precursor, (2) preparing PeQD, and (3) preparing PeQD ink. The PeQD ink prepared by the present invention can eliminate the coffee ring effect in inkjet printing, make the thickness of the pixel points of the color conversion layer more uniform, thereby achieving a uniform light emission effect; it can realize three-dimensional printing, and control the pixel point thickness by controlling the voltage application time without changing the pixel point size of the color conversion layer, which can not only make the pixel point light emission more uniform, but also significantly reduce blue light leakage and improve light conversion efficiency.

The invention discloses a homojunction organic light-emitting diode and a preparation method and application thereof. The homojunction organic light-emitting diode comprises a substrate, a bottom electrode, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a top electrode which are sequentially stacked, and the first light-emitting unit comprises an electron injection layer, a first electron transport layer and a first light-emitting layer. The charge generation layer comprises a hole transport layer, a first hole injection layer, a metal layer and a second electron transport layer, the second light-emitting unit comprises a second light-emitting layer and a second hole injection layer, and the main body materials of the first electron transport layer, the first light-emitting layer, the hole transport layer, the second electron transport layer and the second light-emitting layer are the same. The homojunction organic light-emitting diode disclosed by the invention has the advantages of high luminance, high efficiency, high stability, wide applicable preparation material types and the like, and can be used as an excitation light source of an organic solid laser diode.

The utility model provides a light-emitting diode chip with a high light-emitting area, and belongs to the field of semiconductor devices. The light-emitting diode chip comprises an epitaxial layer, a transparent conductive layer and an insulating layer which are stacked in sequence, the light-emitting diode further comprises a first through hole and a second through hole, the first through hole sequentially penetrates through the insulating layer and the transparent conducting layer to the first semiconductor layer of the epitaxial layer, and the second through hole sequentially penetrates through the insulating layer, the transparent conducting layer and the first semiconductor layer of the epitaxial layer to the second semiconductor layer of the epitaxial layer. The first through hole is internally provided with a first electrode, the size of the first electrode is matched with the size of the first through hole, the first electrode is electrically connected with the first semiconductor layer, the second through hole is internally provided with a second electrode, the size of the second electrode is matched with the size of the second through hole, and the second electrode is electrically connected with the second semiconductor layer. The light-emitting area of the light-emitting diode chip can be increased.

The invention discloses a display panel and a display device.The display panel is provided with a first display area and a second display area, the light transmittance of the first display area is larger than that of the second display area, and the display panel comprises a substrate; the isolation structure is arranged on one side of the substrate and encloses a first isolation opening located in the first display area and a second isolation opening located in the second display area; the light-emitting unit comprises first light-emitting structure layers arranged in the first isolation openings and second light-emitting structure layers arranged in the second isolation openings, more than two stacked first light-emitting structure layers are arranged in the same first isolation opening, and more than two stacked second light-emitting structure layers are arranged in the same second isolation opening; the number of the first light-emitting structure layers in the first isolation openings is larger than the number of the second light-emitting structure layers in the second isolation openings. The display panel disclosed by the embodiment of the invention has relatively small brightness difference.

The invention discloses a quasi-two-dimensional perovskite film doped with tri(4-morpholinyl)phosphine oxide, a preparation method thereof and an application thereof in a light-emitting device. The film comprises a quasi-two-dimensional perovskite and tri(4-morpholinyl)phosphine oxide; the molecular formula of the quasi-two-dimensional perovskite is L2A n‑1 B n X 3n+1 , wherein L is a positive monovalent organic ammonium ion, A is a monovalent cation, B is a divalent cation in a perovskite material, X is a monovalent anion, and n is a positive integer greater than 1. The present invention eliminates pinhole defects in a quasi-two-dimensional perovskite film by doping an appropriate amount of tri(4-morpholinyl)phosphine oxide into a perovskite precursor, passivates uncoordinated ion defects, adjusts the phase composition of the quasi-two-dimensional perovskite, and obtains a high-quality quasi-two-dimensional perovskite film with a low defect density without pinholes; the luminous efficiency and luminous intensity of the prepared light-emitting device are significantly improved. At the same time, the preparation method of the present invention is simple, repeatable, and low cost.