62results about How to "Reduce process steps" patented technology

The invention relates to an oxygen evolution catalyst for hydrogen production through electrolysis of proton exchange membrane water, a membrane electrode and a preparation method of the membrane electrode, and the oxygen evolution catalyst is iridium oxide in a nanoparticle form and contains 2-2.5% of crystal water; the preparation method of the catalyst comprises the following steps: carrying out ultrasonic treatment on an iridium salt solution, mixing the iridium salt solution with magnesium sulfate and water, carrying out ultrasonic treatment, volatilizing a solvent, drying, carrying out ball milling to obtain powder, carrying out high-temperature calcination, dissolving with dilute acid, carrying out suction filtration with water and ethanol until the conductivity is less than 10 [mu] s / cm, carrying out vacuum drying to remove moisture, and grinding to obtain the catalyst. The membrane electrode comprises the catalyst powder prepared by the method and an anode catalyst layer formed by perfluorinated sulfonic acid resin; and the cathode catalyst layer is formed by Pt / C and perfluorosulfonic acid resin. The oxygen evolution catalyst provided by the invention has high activity and high stability, magnesium sulfate is adopted in the preparation method, and the oxygen evolution catalyst has the advantages of simple operation, low cost and the like.

A method for forming a semiconductor structure includes: providing a substrate, the substrate including a base and a layer to be etched, the substrate including a first region and a second region; forming a plurality of first initial mask structures on the first region, and forming a plurality of second mask structures on the second region, the initial first mask structures having a first width deviation dimension, and the second mask structures having a second width deviation dimension; forming a first sacrificial layer on the layer to be etched and the second mask structures; and etching the first initial mask structures to form a first mask structure based on a first advanced process control technology, the first mask structure having a second width dimension and a third width deviation dimension, wherein the third width deviation dimension is equal to the second width deviation dimension. By using the first advanced process control technology for algorithm optimization, the third width deviation dimension is made equal to the second width deviation dimension, eliminating the process step of forming an additional sacrificial layer and then covering the first mask structure.

The invention relates to a large-breadth flexible damage sensing material and a preparation method thereof, belongs to the field of intelligent material preparation, and solves the problem that large-scale preparation of the large-breadth flexible damage sensing material is difficult in the prior art. The invention discloses a large-breadth flexible damage sensing material and a preparation method thereof. The large-breadth flexible damage sensing material comprises a flexible substrate layer, a conductive layer and a packaging layer, wherein the conductive layer is superposed on the flexible substrate layer; the packaging layer covers the conductive layer; the conductive layer is made of a laser-engraved polyimide film, a functional laser-induced graphene structure and an auxiliary separation structure which are etched by a laser engraving machine are arranged on the conductive layer, and the auxiliary separation structure comprises a film through hole and an edge cutting line; the large-breadth flexible damage sensing material provided by the invention is high in fineness, stable in performance and capable of meeting large-breadth sensing application, the preparation method of the large-breadth flexible damage sensing material is simple in step and high in preparation efficiency, and the large-breadth flexible damage sensing material which is stable in performance and high in fineness can be prepared in batches.

The application discloses a reaction system with a straight-through particle collection recycling function, which comprises a reactor and a particle collector, the particle collector is located outside the reactor, and the reactor is connected with the particle collector through a pipeline; wherein the particle collector comprises a shell and a filter part arranged in the shell; the filter part is surrounded by a filter material and is used for intercepting solid substances; the upper end of the filter part is a feeding end, and the lower end of the filter part is a discharging end; a flushing part is arranged in the filter part and is used for flushing the solid substances intercepted in the filter part. The solid catalyst in the reaction system is effectively separated from the reaction system, and the separated catalyst is flushed and then put into the reaction again. In the flushing process, no liquid substance outside the reaction system needs to be additionally used.

The embodiment of the invention provides a chip packaging structure, a preparation method thereof and electronic equipment, relates to the technical field of semiconductors, and is used for reducing the packaging cost of the chip packaging structure. The chip packaging structure comprises a wafer, a chip structure, a plastic packaging film and a supporting layer, wherein the first surface of the wafer is provided with a plurality of first contacts; the chip structure is arranged on the second surface of the wafer; the plastic packaging film covers the surface and at least part of the side surface of the chip structure; wherein the chip structure is electrically connected with the wafer.

The utility model relates to the technical field of pipeline connectors, and discloses a buried cable protection sleeve single-row pipe connector which comprises two beam pipes, one side of each beam pipe is fixedly connected with two clamping blocks, the other side of each beam pipe is provided with clamping grooves clamped with the clamping blocks, one side, far away from the clamping blocks, of each beam pipe is fixedly connected with two supporting blocks, and the other side of each beam pipe is provided with clamping grooves clamped with the clamping blocks. Sliding rods are fixedly connected to the inner walls of the two supporting blocks, two pull columns are slidably connected to the outer portions of the sliding rods, sliding plates are fixedly connected to the inner sides of the pull columns, baffles are fixedly connected to the inner sides of the sliding plates, springs are arranged on the outer portions of the sliding rods in a sleeving mode, and two sealing gaskets are fixedly connected to the inner wall of the beam tube. The sealing gasket is a rubber sealing gasket, and the two beam tubes are reversely clamped through the clamping blocks and the clamping grooves. Compared with the prior art that the clamping blocks need to be pressed respectively to unlock the clamping state, according to the design, the working procedure steps are reduced, and meanwhile the efficiency during disassembly is improved.

The utility model relates to chemical synthetic technical field, concretely is a kind of production system of industrial grade ethylsilane, including the ethylsilane production unit, heat exchange unit, gas-liquid separation unit, ethylsilane temporary storage tank connected in turn;Ethylsilane production unit includes hydrogen preheater, methylsilane preheater, ethylsilane reactor, wherein, hydrogen preheater and methylsilane preheater one end are all provided with inlet pipe, and other end is all connected with ethylsilane reactor, and ethylsilane reactor is connected with heat exchange unit;Heat exchange unit is also connected with hydrogen circulation unit and methylsilane circulation unit.Hydrogen recovery recycling, after a period of time, the hydrogen generated in the reaction process can meet the operation required of ethylsilane production unit, stop external hydrogen supply;Methylsilane recovery recycling, save material, reduce consumption.

The application relates to a semiconductor laser and a laser light emitting device. The semiconductor laser comprises a device body and a lens, and the device body comprises a laser chip. The lens is an integrated structure, comprising a supporting part and an optical part, the supporting part is sleeved on the device body, one end of the supporting part is sealingly connected with the device body, the optical part is arranged at the other end of the supporting part and corresponds to the laser chip. The semiconductor laser replaces the copper cap and the split lens of the traditional semiconductor laser by arranging the integrated lens, and the split lens does not need to be fixed on the copper cap, thereby saving the process steps. During assembly, the integrated lens is aligned with the laser chip on the device body, and is press-bonded on the device body, so that the focusing of the optical part and the laser chip is completed, the position of the lens does not need to be adjusted for many times, and the assembly efficiency is significantly improved. The lens is made of non-metal material, the cost is low compared with the copper cap, and the cost of the semiconductor laser is reduced.

The invention relates to the technical field of semiconductor devices, in particular to an InGaAs focal plane detector based on DTW integration and a preparation method of the InGaAs focal plane detector, and the InGaAs focal plane detector comprises a silicon-based readout circuit wafer layer, an InGaAs detector array chip layer, N electrode metal and an optical filter film structure layer. The first indium bump array and the second indium bump array are bonded in a flip-chip manner and are filled and fixed by an organic polymer medium; the N electrode metal is respectively connected with the n-InP contact layer and the N electrode region; and the optical filter film structure layer is arranged on the back surface of the InGaAs detector array chip layer. According to the DTW integration technology based on the In salient point array, a traditional N hole structure and a preparation technology are removed, the N electrode is led out from the back face to the N electrode of the reading circuit after the substrate is removed, the technology steps can be simplified, the area of a detector array chip is reduced, a wafer-level machining platform is connected, and the condition for constructing a high-performance optical filtering structure is achieved.

This invention relates to a method for preparing capillary seamless steel tubes, comprising the following sequential steps: S100. Selecting austenitic stainless steel seamless tubes as tube blanks, the outer diameter of the tube blanks being 8mm-15mm, the wall thickness being 0.5mm-1.2mm, and the wall thickness accuracy being ±0.015mm; S200. Using a drawing machine with a long mandrel, cold-drawing the tube blanks from S100, when the deformation compression rate of a single cold drawing is 30%-75%, performing internal and external surface cleaning and solution treatment; repeating the above treatment until a capillary seamless steel tube with an outer diameter of 3.8mm-4.2mm and a wall thickness of 0.125mm-0.3mm is obtained. Drawing the billet; wherein the hardness of the long mandrel is 780HV-860HV, and the diameter accuracy of the long mandrel is ±0.005μm; S300. Using a drawing machine with a moving mandrel, the moving drawing billet obtained in S200 is cold drawn. When the deformation compression rate of a single cold drawing is 30%-75%, the inner and outer surfaces are cleaned and solution treated; repeat the above treatment to obtain a capillary seamless steel tube with an outer diameter of 0.59mm-1mm, a wall thickness of 0.05mm-0.09mm, and a wall thickness accuracy of ±0.003mm; S400. The capillary seamless steel tube obtained in S300 is subjected to external grinding treatment to obtain the final product.

The application discloses a kind of aluminum nitride as medium's capacitance loaded MEMS filter and manufacturing method, method includes: providing silicon substrate;Forming first metal layer on silicon substrate, and it is patterned;Forming dielectric layer on first metal layer and it is patterned;Silicon substrate is coated with photoresist and is patterned, carries out silicon hole etching, forms silicon via by thinning process;Forming patterned second metal layer on the front and back of silicon substrate;The first metal layer is as the lower electrode of capacitor, dielectric layer is as the dielectric layer of capacitor, and the second metal layer is the upper electrode of capacitor, filter resonator, via and back ground metal.End loaded capacitor mode can greatly reduce the volume of filter, the second metal layer is simultaneously as capacitor upper electrode, filter resonator, via and back ground metal, not in need additional process step to make resonator, reduce process step, realize the miniaturization of filter, satisfy SiP integration demand.

The utility model discloses a stamping die of fin, including lower die seat, the top of lower die seat is equipped with a plurality of float and sink pin, the top of lower die seat is equipped with the groove of being suitable for with the position of float and sink pin, the top of lower die seat is equipped with the material belt groove, lower die seat is provided with pin angle riveting seat in material belt groove, the top of lower die seat is provided with upper die seat, and upper die seat is fixedly connected with pin angle riveting head on one side close to lower die seat, and material belt groove is provided with SPCC electroplated PIN angle material belt, and the top of lower die seat is provided with fin main body material belt, and SPCC electroplated PIN angle material belt and fin main body material belt are perpendicular distribution, and the first sliding slot and the second sliding slot are seted up on lower die seat, and the first sliding slot is provided with moving block, and the one end of moving block is equipped with the slot. The utility model realizes the high degree of automatic, synchronous integration production of fin stamping and PIN angle riveting, reduces the number of mould and complicated process operation, reduces mould purchase, maintenance and artificial cost.

The utility model discloses a kind of interlayer interconnection structures for multilayer circuit board in the technical field of circuit board processing, multilayer circuit board includes multiple layer plates, multiple layer plates are integrally formed by once compression, and multiple different depth blind holes are provided on multilayer circuit board, each blind hole extends to set depth from surface layer or bottom layer of multilayer circuit board, the surface of blind hole is provided with conductive layer, and the inside of blind hole is also filled with plug hole medium for making up the current deficiency problem of conductive layer. The utility model solves the defects that interlayer interconnection structure in existing multilayer circuit board is difficult to process, yield is low, cost is difficult to control, etc., greatly reduces the process flow steps of processing, saves processing time, reduces processing cost, improves yield, and the utility model can also make up the problem of insufficient conductive current caused by insufficient copper of mechanical blind hole.

A dynamic random access memory and a forming method thereof, wherein the method comprises: forming a first wafer, the first wafer having a storage area and a plurality of peripheral capacitor areas outside the storage area, one peripheral capacitor area comprising a plurality of peripheral capacitors, the storage area comprising a plurality of storage banks, each storage bank comprising a plurality of memory groups, the plurality of memory groups being arranged in an array along a first direction and a second direction, each memory group comprising a plurality of memory cells, each memory cell comprising a storage capacitor; forming a second wafer, the second wafer having a logic circuit area, the logic circuit area comprising a plurality of first peripheral areas and a second peripheral area, the plurality of first peripheral areas being arranged in an array along the first direction and the second direction; bonding the first wafer and the second wafer, and electrically connecting one of the first peripheral areas and one of the memory groups, thereby improving the integration level of the chip.

The invention belongs to the technical field of medicine synthesis, and particularly relates to a method for preparing oxacillin sodium through an enzyme method. The method comprises the following steps: taking 6-APA and 5-methyl-3-phenylisoxazole-4-carboxylic acid methyl ester as raw materials, and adding immobilized penicillin G acylase for reaction to obtain an oxacillin sodium solution; and filtering, dialyzing, concentrating and crystallizing the oxacillin sodium solution to obtain the oxacillin sodium. The method has the advantages of mild reaction conditions, reduction of the generation of wastes, low production cost, accordance with a green production process, and very good industrialization value; and a nanofiltration membrane dialysis process is introduced into the post-treatment of the reaction liquid, so that the product quality control is better guaranteed.

The application discloses a production process of a ceramic fiber catalytic filter tube, and specific steps of the production process are as follows: pretreatment of aluminum silicate fiber, mold pressure filtration, catalytic primer coating, continuous variable-temperature baking and cooling. The original process of '600 DEG C baking and cooling, normal-temperature catalytic primer coating, 400 DEG C baking and cooling, 150 DEG C baking and cooling is adjusted to 'normal-temperature catalytic primer coating of 85 DEG C, 650 DEG C, 500 DEG C and 200 DEG C continuous high-temperature baking', and the heating temperature is automatically adjusted through PLC, so that the process steps are effectively saved, the production efficiency is improved, the original high-temperature baking total time '27h' is optimized to '15h' without calculating the cooling time, the processing time of the aluminum silicate filter tube in the process flow is greatly reduced, the gas energy consumption of the baking furnace is saved, and the production cost is saved.

This application provides a semiconductor structure, a method for manufacturing the same, and a memory system. The method for manufacturing the semiconductor structure includes: forming a first sacrificial structure penetrating a stacked structure and a gate line slot penetrating the stacked structure and extending along a first direction, wherein the first direction is perpendicular to the stacking direction of the stacked structure; removing the first sacrificial structure to form a memory via; and forming a gate line slot structure and a memory structure in the gate line slot and the memory via, respectively.

The invention discloses a manufacturing method of a semiconductor device, a gray scale photomask and the semiconductor device. The method comprises the following steps: providing a substrate, and forming an inorganic layer and a photoresist layer on the substrate; a gray scale photomask is configured, and the gray scale photomask comprises a first photomask with two light transmitting areas and a second photomask with two light filtering areas with different light transmittances. The exposure light penetrates through the gray scale photomask so as to carry out single exposure with different energies on the photoresist layer, and photoresist patterns with height differences are formed after development. And finally, transferring the photoresist pattern to the inorganic layer through ion etching, so that the inorganic layer forms an etched microstructure with corresponding height difference. Therefore, compared with the traditional photoetching process using electron beam direct writing or multiple photomask exposure, the method disclosed by the invention has the advantages that the process steps can be greatly shortened, the manufacturing cost and time can be reduced, the structural precision loss caused by multiple alignment errors can be reduced, and the manufacturing efficiency and the yield can be obviously improved.

The utility model discloses an aging oven for heat treatment of wear-resistant steel castings, and relates to the technical field of aging ovens, the aging oven for heat treatment of wear-resistant steel castings comprises a heat preservation box body, the bottom of an inner cavity of the heat preservation box body is fixedly connected with a supporting track, the supporting track is provided with a material placing mechanism, and the front end of the heat preservation box body is rotatably connected with two bin doors. A driving part for automatically opening and closing the bin door is arranged on the heat preservation box body, a transmission module capable of automatically pulling out the material placing mechanism is arranged on the heat preservation box body, and a reset unit for resetting the material placing mechanism is arranged on the heat preservation box body; when the bin door is opened through the transmission module, the material placing mechanism can be automatically pulled out, so that workers do not need to pull out the material placing mechanism, and the workers are prevented from being scalded by high temperature; when the bin door is closed, the reset unit can automatically reset the material placing mechanism, workers do not need to push the material placing mechanism into the bin door and then close the bin door, the procedure steps are reduced, and the working efficiency is improved.

The utility model discloses a screw assembly and a double-screw extruder for a reactive melt-blowing process, the screw assembly comprises two screws which have the same structure, rotate in the same direction and are meshed with each other, and each screw consists of a mandrel and a thread element; one end of the core shaft is a feeding end, the other end of the core shaft is a discharging end, and the core shaft can rotate under the action of external force; the threaded element is arranged on the mandrel in a sleeving mode and can rotate along with the mandrel. The screw assembly comprises a feeding section, a reaction section and an extrusion section which are connected in sequence, and the types, the leads and the lengths of internal thread elements in all the sections are reasonably arranged; therefore, conveying of low-viscosity raw materials, initiation of polymerization reaction, macromolecule growth and mixing, conveying and extrusion of high-viscosity polymerization products can be rapidly achieved in a continuous process, and a continuous polymer melt which is stable in pressure, constant in flow and easy to draw and thin is provided for a subsequent spinning assembly.

The utility model discloses an inductor forming device, which comprises a forming main body, a pressing part, a pressing part and a pressing part, the forming main body comprises a main body part, and a protruding part is arranged at the top of the main body part and is used for supporting extruded powder; a forming groove is formed in the middle of the main body part and used for filling powder and containing a copper conductor, and a guide groove is formed in the bottom of the forming groove and used for reducing forming resistance. According to the utility model, the protruding part can provide a copper conductor placing space and support extruded powder, and can be far away from the end part of the copper conductor exposed after molding, and the molding groove and the guide groove can enable the filled powder to move towards the protruding part during molding, thereby reducing the resistance generated on the end surface during molding, effectively reducing the deformation displacement generated by the copper conductor, and prolonging the service life of the copper conductor. The problem of low yield caused by corner deformation of the copper conductor is solved; and secondary powder feeding is not needed during processing, and hot press molding can be completed only through one-time powder feeding, so that the process steps are effectively reduced, the processing difficulty is reduced, and automatic processing production is realized.

The present application discloses a hot stamping film, a transfer film, a composite paper and a transfer paper. The hot stamping film, the transfer film, the composite paper and the transfer paper all comprise a precision microstructure layer, and the surface of the precision microstructure layer is provided with a precision microstructure; the hot stamping film comprises a base film layer, a precision microstructure layer, a medium layer and a hot melt adhesive layer; the transfer film comprises a base film layer, a precision microstructure layer and a medium layer; the composite paper comprises a base film layer, a precision microstructure layer, a medium layer, a hot melt adhesive layer and a base paper layer; and the transfer paper comprises a precision microstructure layer, a medium layer, a hot melt adhesive layer and a base paper layer. The present application is provided with a precision microstructure, the precision microstructure presents color, three-dimensional relief and dynamic optical effect; the width of the groove is less than 30 microns, and the micro-nano level ink is filled in the groove, which is more delicate and presents a more delicate image. The ink is only filled in the groove, reducing the use of ink; and subsequent printing is not required, reducing the process steps and lowering the cost.

This invention discloses a fixing device for riveting a driven disc and a friction plate; a fixing assembly is connected between a support plate and a connecting plate; a dust removal assembly is connected to the fixing assembly; four positioning rods quickly position and align the lower friction plate, the driven disc body, and the upper friction plate, avoiding the problem of manually aligning the fixing holes of the lower friction plate, the driven disc body, and the upper friction plate, thus improving riveting efficiency; the first slider supports the driven disc bushing, thereby providing support force to the middle of the driven disc body, improving the stability of the clamping and riveting process; and the height of the first slider is adjustable, improving versatility; simultaneously, before clamping the lower friction plate, the driven disc body, and the upper friction plate, the third and fourth fixing blocks respectively lock the round rod and the sleeve, avoiding the problem of poor stability caused by the misalignment of the first and second fixing blocks when clamping the lower friction plate, the driven disc body, and the upper friction plate, and also avoiding interference with the riveting process.

The invention relates to the technical field of pressure-bearing special equipment manufacturing, in particular to a longitudinal girth welding machine which comprises a moving assembly, a longitudinal girth welding assembly and a longitudinal girth welding assembly. The welding assembly is used for welding the boiler barrel and comprises an inner welding unit and an outer welding unit, and the inner welding unit is located on one side of the preprocessing station and used for welding the inner side of the boiler barrel; the outer welding unit is located on one side of the outer welding station. And the welding positioning assembly is located between the pre-machining station and the outer welding station, the welding positioning assembly comprises an outer ring, a first fastening ring and a second fastening ring, the first fastening ring and the second fastening ring are installed on the inner side of the outer ring, and the first fastening ring and the second fastening ring are used for fixing the ends of the two boiler barrels needing to be assembled correspondingly. By arranging the welding positioning assembly, the ends of the two boiler barrels are kept relatively fixed, the process step of positioning and pre-welding is omitted, the inner welding unit stretches into the inner sides of the boiler barrels, and welding work of inner circular seams can be directly conducted.

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes: a semiconductor substrate comprising an active region and a termination region, the termination region surrounding the active region; wherein the termination region comprises: a first field-limiting ring located within the semiconductor substrate and surrounding the active region; and a cutoff structure comprising a second field-limiting ring and a metal field plate located on the second field-limiting ring, the second field-limiting ring being located within the semiconductor substrate and surrounding the outside of the first field-limiting ring, the second field-limiting ring having the same ion doping type as the first field-limiting ring. The semiconductor device provided by this invention can balance the requirements of low cost and high reliability.

The application provides a semiconductor device, relates to the technical field of semiconductor, and aims to solve the problem of increased on-resistance caused by bipolar degradation of a semiconductor device in the prior art.The semiconductor device comprises a polycrystalline silicon carbide substrate with P-type conductivity, a drift layer with N-type conductivity, and a collector metal layer, the drift layer is arranged above the polycrystalline silicon carbide substrate, and the drift layer is internally provided with a P column and an N region which are adjacent in the lateral direction; the collector metal layer is directly laminated on the other side of the polycrystalline silicon carbide substrate which is away from the drift layer and forms an ohmic contact with the polycrystalline silicon carbide substrate. The polycrystalline silicon carbide substrate can inject a higher concentration of minority carriers into the drift layer, so as to improve the conductance modulation efficiency and reduce the resistance; meanwhile, the polycrystalline silicon carbide substrate makes the recombination process of electrons and holes in the drift layer more uniform, and energy is not released at a certain point, thereby reducing the serious bipolar degradation phenomenon caused by local defect aggregation.

The application provides a back contact cell and a preparation method thereof, and relates to the technical field of solar cells. The preparation method of the back contact cell comprises the following steps: providing a semiconductor substrate; sequentially preparing a tunneling oxide layer and an intrinsic silicon base layer arranged in a stack on the back light surface of the semiconductor substrate; preparing a first doped silicon base layer on the intrinsic silicon base layer; removing the first doped silicon base layer in a first region, so that the intrinsic silicon base layer in the first region is exposed; preparing a second doped silicon base layer on the back light surface; and annealing the intermediate body of the back contact cell to form an electron-doped layer, a hole-doped layer, a tunneling junction and a neutral-doped compensation region. According to the application, the intrinsic silicon base layer in the first region is first exposed, and then the second doped silicon base layer is prepared on the back light surface, and then annealing is performed, so that the electron-doped layer and the hole-doped layer can be formed synchronously, the tunneling junction and the neutral-doped compensation region can be formed, the process flow steps can be reduced, and the risk of conduction of the electron-doped layer and the hole-doped layer can be reduced.

This application provides a stacked optocoupler packaging structure and its fabrication method, belonging to the field of optoelectronic semiconductor packaging technology. The structure includes: an emitter lead frame, an infrared chip, a receiver lead frame, and a photosensitive chip; the infrared chip is flip-chip bonded to the emitter lead frame; the photosensitive chip is bonded to the receiver lead frame; the emitter and receiver lead frames are stacked vertically; a Fresnel focusing lens is positioned above the photosensitive chip and bonded to it with an adhesive; a packaging shell is composed of a transparent inner potting compound layer and a black outer potting compound layer, formed sequentially by molding. The packaging shell encapsulates the emitter assembly, receiver assembly, and Fresnel focusing lens, and exposes some pins of the emitter and receiver lead frames. This application achieves high isolation voltage, reduces packaging size, improves photoelectric conversion efficiency, enhances long-term reliability, and simplifies the manufacturing process.

This invention belongs to the field of chemical analysis and relates to the extraction of 6,7-dihydroxy-2,4-dimethoxyphenanthrene, specifically a method for extracting high-purity 6,7-dihydroxy-2,4-dimethoxyphenanthrene. This invention, by improving extraction efficiency, simplifying purification steps, increasing product purity, and reducing preparation costs, helps promote the application development and market application of this compound, and also contributes to the sustainable development of related industries. This invention fully utilizes the abundant resources of yam and its by-products, turning waste yam by-products into valuable resources. This not only extends the yam industry chain and increases added value, but also makes full use of resources, resulting in significant economic and social benefits. This invention also has significant advantages in improving separation efficiency, reducing environmental pollution, simplifying operations, increasing yield, and fully utilizing resources, and is expected to be widely applied and promoted in the field of yam compound extraction.