174results about How to "Reduce process steps" patented technology

The invention provides a novel method for separating gold and silver from gold slime, which comprises: wet gold slime is subjected to one-step chloridizing leaching and filtered; filtrate is a gold-containing solution, and filter cakes are silver chloride deposit; the gold-containing solution is reduced to obtain gold powder which is then smelted into gold ingots; and the filter cakes, namely the silver chloride deposit, are converted into coarse silver powder which are then smelted into silver ingots. The method adopts one-step chloridizing gold leaching reaction to overcome the defect of large metal loss due to long pretreatment flow of the gold slime and high frequency of filtration reaction in the prior art, only uses a hydrochloric acid and sodium chlorate during chloridizing and gold leaching, is easy to control the reaction, removes the process of pre-leaching the gold slime and removing impurities in the prior art, removes multi-step reduction, reduces the processing step, greatly reduces the discharge amount of wastewater, reduces the heating duration, saves the cost of water and electricity, and improves the recovery rate of the gold and the silver and the quality of the gold ingots and the silver ingots.

The invention discloses an array substrate and a manufacturing method thereof, and a display device. Therefore, the process steps are reduced, so that the production cost is lowered and the production efficiency is improved. The array substrate includes a substrate base plate, thin-film transistors arranged on the substrate base plate, data lines connected with source electrodes/drain electrodes of all thin-film transistors, and a light shield layer arranged on the substrate base plate. The data lines and the light shield layer are arranged at the same layer. First via holes are formed above the data lines to expose parts of data lines. The thin-film transistors include semiconductor active layers and first transparent electrodes; second via holes are formed above the semiconductor active layers to expose parts of the semiconductor active layers; and the data lines and the semiconductor active layers are electrically connected by the first transparent electrodes through the first via holes and the second via holes.

The invention discloses a making method of composite salt of aminoglucose sulfate, which comprises the following steps: transmitting amino glucose hydrochlorate into amino glucose in the alkaline solution; generating chloride simultaneously; acting sulfuric acid and amino glucose to form aminoglucose sulfate; condensing; crystallizing; obtaining the product.

The invention designs a structure of a novel MEMS piezoelectric vibration energy collector and a manufacturing method of the novel MEMS piezoelectric vibration energy collector. According to the structure, the novel MEMS piezoelectric vibration energy collector comprises a dually-polished substrate and double substrate protecting layers. According to the manufacturing method of the novel MEMS piezoelectric vibration energy collector, a front metal conductive layer (the bottom) is used as an output bottom electrode; a patterned conductive adhesive is manufactured on an upper metal layer; a PZT piezoelectric patch is bonded to a silicon wafer bottom electrode through the conductive adhesive; full-piece covering of a top electrode metal conductive layer (the top) is conducted; KOH is corroded through a window in the back-side substrate protecting layer, and a cantilever beam structure which mainly contains epoxy resin and does not contain Si is released; a cantilever beam-quality block structure is released through scribing. The novel MEMS piezoelectric vibration energy collector is simple in structure, easy to obtain, capable of facilitating batch production, high in sensitiveness, output level and power, wide in application range, safe and reliable.

The invention discloses a manufacturing method of a tungsten silicon target material. The manufacturing method of the tungsten silicon target material includes: providing high-purity tungsten powder and high-purity silicon powder; mixing the tungsten powder with the silicon powder by a wet mixing process to obtain mixed powder; making the mixed powder into a tungsten silicon target material blank by a cold pressing process; and making the tungsten silicon target material blank into the tungsten silicon target material by a vacuum hotpressing process. The manufacturing method provided by the invention has the advantages of fewer technological steps and fast production speed. By means of the manufacturing method involved in the invention, the tungsten silicon target material with density greater than or equal to 99% can be obtained. And the obtained tungsten silicon target material has a uniform microstructure, and has excellent sputtering usability.

The invention provides a vacuum freeze dryer which comprises a material box, a water catching bin, a refrigerating unit, a heater, a vacuum pump and a control device. The material box is communicated with the water catching bin. The water catching bin is connected with the vacuum pump. The refrigerating unit and the heater are arranged outside the material box. The control device controls the refrigerating unit, the heater and the vacuum pump. The material box is internally provided with a refrigerating pipe and a heating pipe at the same time, and the refrigerating pipe and the heating pipe are used for freezing and drying materials respectively. The inner wall of a material frame and the inner wall of the material box are each provided with a temperature sensor, and the temperature sensors monitor the temperature of the material frame and the temperature of the material box. Materials inside a material bottle are frozen in advance to reach the eutectic point approximately, then the temperature is decreased rapidly, and the materials pass through the eutectic point within the short time as little as possible, so that the grain size of crystals is effectively controlled, the fine freeze-drying powder is obtained, and the freeze-dried powder product quality is improved. The freezing cavity and the drying cavity are integrated, the technological steps are simplified, the occupied space is small, and refrigerating and heating are uniform.

The present invention relates to artificial cultivating technology for golden mushroom, and is especially artificial golden mushroom cultivating method. The method includes seed screening and preparation, compounding culture medium, bottling or bagging, high temperature sterilizing, cooling, inoculating seed and culturing. The method has culture medium comprising sawdust and rice bran in the weight ratio of 7/3 to 7.5/2.5, seed inoculation in no-bacteria ventilating operation stage, indoor air sterilization with 75 % alcohol solution, and the culture process at 14-16 deg.c and sterilizing condition for 21-23 days. The culture medicine of the present invention is easy to obtain and harmless to human body.

The invention relates to the technical field of panel display, and provides a multicolour OLED (organic light-emitting diode), a multicolour OLED unit and a display device. According to the invention, the multicolour OLED emitting lights with different colours in one unit can be obtained by stacking a plurality of OLEDs, and arranging only one layer of common electrodes between the two adjacent OLEDs, so that the obtained multicolour OLED unit can greatly reduce the size of the pixel point of a displayer and obtain a good display effect; simultaneously, process steps are reduced, the process can be realized without the need to change present equipment, and requirements on the equipment are simple.

The invention discloses an LCP (Liquid Crystal Polymer) or fluoride polymer high-frequency high-transmission double-sided copper clad laminate which comprises a first copper foil layer, a second copper foil layer, a first very low dielectric glue layer and at least one insulating polymer layer, wherein the first very low dielectric glue layer is positioned between the first and second copper foillayers; the Rz value of the inner surfaces of the first and second copper foil layers is 0.1-1.0 micron; the insulating polymer is at least one of a first LCP polymer layer or a first fluoride polymerlayer; the first very low dielectric glue layer is a glue layer with a Dk value of 2.0-3.5 and a Df value of 0.002-0.010; the first polyimide layer is an insulating polymer layer with a Dk value of 2.20-3.50 and a Df value of 0.002-0.010. The double-sided copper clad laminate and the FPC disclosed by the invention have excellent electrical properties and also have cost advantages, short manufacture procedure processes, low thermal expansion coefficients, stable dk/df performances in high-temperature and humidity environments, ultra-low water absorption rate, excellent UV laser drilling abilities, low rebound, suitableness for high-density assembly and excellent mechanical properties.

A wafer-class test and salient point technology and the chip structure with test pads are disclosed. The multiple test pads as the test points for analyzing and debugging the circuits are arranged on the active surface of wafer, and electrically connected with relative flip-chip welding pads of chip. The probe can directly contact the surface of test pads for testing the wafer. Based on the test result, it is determined that if the repair lines are cut off via repair window. Finally the protecting layer and salient points are sequentially generated on the active surface of wafer, which is the cut to form more chips.

The invention relates to an industrial method for preparing 3- amino- 2, 2- bimethyl propionamide, which is a segment in high pressure protein proenzyme inhibitor. The invention takes normal and cheap cyanoacetamide as raw material, alkalyating two nethyls, catalytic hydrogenating or adding reducant agent and getting 3- amnio- 2, 2- bimethyl propionamide. The chenmical reaction is shown in the graph. The invention solves problems of difficulty of getting raw material, low productivity and long process line, needs no column chromatography and purification, avoids toxic potassium cyanide and realizes large scale production.

The invention relates to a method for directly producing low-molecular weight heparin sodium through a heparin sodium crude product, and the method comprises the following steps of: (1) dissolving the heparin sodium crude product into a heparin sodium crude product solution by using a sodium chloride solution, regulating the pH value of the heparin sodium crude product solution to 5.0-10.0 by using hydrochloric acid or a sodium hydroxide solution, centrifugalizing by using a high-speed centrifuge to remove undissolved substances, depositing liquid obtained through centrifugalization by using ethanol, standing the deposited liquid at low temperature, collecting a sediment A, diluting the sediment A by using purified water, adding hydrogen peroxide for oxidation after the sediment A is completely dissolved, filtering, adding the ethanol for deposition, and standing to obtain a sediment B; and (2) taking out the sediment B as the intermediate of the heparin sodium crude product, adding the purified water for dissolution, stirring, adding sodium nitrite to degrade heparin sodium at the same time, adding sodium borohydride to reduce the heparin sodium, intercepting large molecules by using an ultrafilter after the reduction is finished, adding the ethanol to ultrafiltrate for deposition, dewatering by using the ethanol, and drying to obtain the low-molecular weight heparin sodium.

The invention belongs to the field of low-dimensional nanometer materials and nanometer technology, and in particular discloses a method and a device for preparing a tin dioxide nano-belt through vapor deposition. The method comprises the following steps: mixing and dissolving tin salt, citric acid and glycol in water in certain proportion, and stirring the mixture to form a sol; heating the sol to form a gel; cracking the gel to form a compound precursor; grinding the compound precursor into powder and moving the powder into a ceramic boat; heating up the powder in a tube type resistance furnace for reaction; using inert gas as transport gas to cool the powder; and collecting the product by using a silicon slice as a substrate to obtain the tin dioxide nano-belt. Because of few process steps, the method has the advantages of simple process, simple and convenient operation, high controllability, low requirements on experimental facilities, low cost and high industrial value; besides, the tin dioxide nano-belt prepared by the method has a square rutile type structure and good crystallinity.

A gallium-nitride-based high electronic mobility transistor structure with a barrier layer comprises a substrate, a nucleating layer manufactured on the substrate, an unintentionally doped high resistance layer manufactured on the nucleating layer, an unintentionally doped high mobility channel layer manufactured on the unintentionally doped high resistance layer, an unintentionally doped aluminum nitride space layer manufactured on the unintentionally doped high mobility channel layer, an unintentionally doped barrier layer manufactured on the unintentionally doped aluminum nitride space layer and an unintentionally doped gallium nitride cap layer manufactured on the unintentionally doped barrier layer. The gallium-nitride-based high electronic mobility transistor structure can improve a limiting effect on channel two-dimensional electron gas and increase output power of a developed device, and simultaneously grate current of the device is reduced.

The invention provides an etching composition. Satisfactory conical etching section shape which is difficult to realize in prior art is obtained without generation of lateral erosion when a stacked metal layer containing Cu or Cu alloy and Mo or Mo alloy is etched by the etching composition. At least one salt selected form group comprising phosphate whose aqueous solution is basic and carboxylate whose aqueous solutuin is basic, hydrogen peroxide and water are essential components of the inventive composition. The etching composition is used to etch Cu or Cu alloy and Mo or Mo alloy of stacked metal layer with more that two layers at the same time, the stacked metal layer with more than two layers is formed by one layer or more than two layers of Cu or Cu alloy and one layer or more than two layers of Mo or Mo alloy.

The invention discloses a method for high-efficiency production of alpha type hemihydrated gypsum; the method comprises the steps: firstly, pretreating a provided crystal transformation agent into a crystal transformation agent powder with the particle size of 80-100 mesh, and then evenly mixing the crystal transformation agent powder with a provided dihydrate gypsum powder with the mass ratio of0.02-0.8%, to obtain a mixture powder; directly loading the mixture powder with the bulk volume of 75-85% of the volume of a crystal transformation device into the crystal modification device; introducing 0.25-0.45 MPa saturated water vapor to the crystal modification device, at the moment, gradually permeating the saturated water vapor into a loose material layer, gradually dissolving the powdercrystal transformation agent, gradually increasing the temperature of the mixture to 135-160 DEG C, carrying out heat and pressure insulation for 4-6 h, completing crystal transformation of the mixture, and forming a mixed-crystal crystal with a short columnar crystal as the main part; and finally, drying the mixed-crystal crystal to obtain the alpha type hemihydrated gypsum. The method for high-efficiency production of the alpha type hemihydrated gypsum can effectively improve the production efficiency when the alpha type hemihydrated gypsum is produced with powdered dihydrate gypsum as the raw material, especially with industrial by-product gypsum as the raw material.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a 3D NAND flash memory. The method comprises the steps that firstly, different stairs are made on the part where steps are opened through 1+log2N levels of light covers and the etching technology to form differences; then, 2N stairs are etched at a time through 1 level of a light cover or PR trimming and etching. Thus, the technological steps are reduced, and meanwhile technological cost is reduced.

The sodium alginate producing process includes raw material kelp pre-treatment, kelp digestion and sodium alginate product preparation and features the front-stage treatment between the pre-treatmentand digestion, in which kelp is soaked in NaClO solution to turn in color from brown into light green or white, water flushed, HCl solution soaked to eliminate pigment, sugar gum, Ca ion, etc. The process is short, simple and high in production efficiency.

The invention provides a vertical type LED manufacturing method. An existing undoped layer is etched as a current blocking layer, an insulated dielectric layer does not need to be additionally formed, the process steps are decreased, and production cost is lowered; meanwhile, the formed current blocking layer can improve the current expanding of a vertical type LED under the large current, current distribution is even, and therefore the luminous intensity of the vertical type LED is improved.

The invention provides a preparation method for thermoplastic phenolic resin-based hollow carbon balls. The method comprises the following steps of: blending an aqueous solution containing 1-10 wt% dispersing agent at 20-50 DEG C; stirring phenolic resin, a curing agent and the aqueous solution of the dispersing agent in a mass ratio of 100:(3-20): (500-1500) in an autoclave, heating to 110-130 DEG C in the autoclave, insulating for 0.5 to 3 hours, and then cooling, filtering, and drying to obtain hollow phenolic resin balls; and heating the hollow phenolic resin balls to 800-1000 DEG C in a carbonization and activation furnace in the presence of nitrogen used as protective gas, keeping the temperature constant for 0.5-3 hours, activating the hollow phenolic resin balls at a vapour flow speed of 0.1-1.2 m<3> per hour for 100 g of the hollow phenolic resin balls during the constant-temperature section process, and cooling to obtain the hollow carbon balls. The preparation method for thermoplastic phenolic resin-based hollow carbon balls disclosed by the invention has the following advantages: the hollow carbon balls with ball diameter of 0.1-1.5 mm and the sphericity of 95%-99% are obtained; the volume production rate of a reaction kettle is high; and the hollowness degree of the carbon balls is controllable.

The invention provides chip measuring sorting system and method. The system comprises a sorting device, a measuring device and a carrying device, wherein the sorting device and the measuring device are adjacent to each other; a first storing seat is arranged in the measuring device, and while a second sorting seat is arranged in the sorting device; the carrying device is adjacent to a positioning access device; a first carrying platform is arranged on the carrying device, and while a second carrying platform is arranged on the positioning access device to carry and position a standard device; the carrying device is adjacent to the storing device; a picking rotating arm is arranged between the carrying device and the sorting device; the positioning access device is arranged adjacent to a tool frame assembly, and a second mechanical arm is arranged between the positioning access device and the device frame assembly; a standard device and a central control system which is connected with all the devices above are stored in the device frame assembly. With the adoption of the system, the problems of low production efficiency and relatively high production cost due to repeated setting of a cabinet and wafer scanning during measuring and sorting chips in the prior art can be solved.

The invention belongs to the technology field of graphene materials, and discloses a boron doped graphene and a preparation method thereof. The invention adopts a high temperature hot doping method to prepare boron doped graphene. The method comprises following steps: taking graphite as the raw material, and oxidizing the graphite so as to obtain graphite oxide; placing the graphite oxide in a mixed gas atmosphere composed of inert gas and boron source gas, heating to the temperature of 800 to 1100 DEG C, then maintaining the temperature for 0.5 to 2 hours, and cooling the product to the room temperature so as to obtain boron doped graphene. The technology by utilizing the high temperature hot doping method to prepare boron doped graphene has the advantages of few steps, simple operation, and low requirements on equipment, and is benefit for mass industrial production. Graphite oxide is a carbon material with a preferably bad ordering, the material with a lower ordering is more suitable for carrying out boron doping, and the doping process is more homogenous by adopting gas state boron source. The prepared boron doped graphene presents a P-type doping, because the original conjugated structure of graphene is not affected, the boron doped graphene has a more excellent conductive performance than that of graphene.

The invention relates to a method for producing a colorized light-filtering basal plate. The method comprises the following steps: a basal plate is provided; a first color layer, a second color and a third color layer are sequentially formed on the basal plate; and a plurality of supports are formed by partial superposition of any two layers in the first color layer, the second color and the third color layer. A common electrode layer is formed on the basal plate for covering the first color layer, the second color, the third color layer and the supports. A shading layer is formed on the common electrode layer and partially arranged above the supports. Therefore, the method for producing the colorized light-filtering basal plate needs less mask.

The invention relates to the technical field of solar cells, in particular to a preparation method of a high-efficiency P-type passivation contact crystalline silicon solar cell. The preparation method comprises the following steps of: firstly, polishing (or texturing) a P-type monocrystalline silicon wafer serving as a silicon substrate; growing a tunneling silicon oxide film and a doped P-type amorphous silicon film on the back surface of the processed silicon wafer by adopting PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment; depositing a BSG (Boron-Silicon Glass) film on the back surface by adopting the PECVD equipment; performing texturing treatment in KOH solution, and forming a pyramid structure on the front surface of a cell; utilizing a diffusion furnace; growing a passivation layer; and performing screen printing and sintering. According to the preparation method in the invention, a high-temperature crystallization process of amorphous silicon and a standard phosphorus diffusion process are completed in one step in a diffusion tube, so that the process flow is optimized, and the process steps are reduced, thereby greatly improving the productivity, reducing thepollution risk, facilitating reduction of the cost and realization of a high conversion efficiency, and laying a foundation for large-scale application.

The invention discloses a method for preparing bio-based nylon-54 precursor-pentylenediamine butanediate by using the co-fermentation of genetically engineered bacteria. Lysine decarboxylase is over-expressed in succinic acid generation strain, the lysine is added to perform the decarboxylation in the fermentation process of succinic acid, two decarboxylation products, i.e., pentamethylene diamineand CO2 are respectively used for synthesizing a regulating agent for the system pH and succinic acid, the co-fermentation production of succinic acid and the fixation of CO2 are realized, and pentylenediamine butanediate in a fermentation solution can be used as a precursor to be further used for polymerizing the bio-based nylon-54. Compared with the existing preparation method of the nylon-54,the method is simple in process, low in cost, safe and controllable in process, environmentally friendly, high in application value, and good in economical performance.

A simple preparing method for a zeolite-loaded titanium dioxide wastewater treating agent is provided. The method includes grinding natural zeolite, activating through adopting a NaCl solution, dipping into TiO2 precursor sol to fully loading the surface of the zeolite with the sol, and annealing finally to obtain the zeolite-loaded titanium dioxide wastewater treating agent. The method is simple and controllable in process and low in cost. The wastewater treating agent prepared through the method is high in photocatalytic activity, high in adsorbability, capable of deep ammonia nitrogen removing, and good in wastewater purifying effects.

The invention discloses a co-wound high-voltage and low-voltage coil. The co-wound high-voltage and low-voltage coil comprises an iron core and a high-voltage insulating barrel, wherein the high-voltage insulating barrel is arranged at the outer part of the iron core, a high-voltage coil supporting bar is arranged on an outer surface of the high-voltage insulating barrel, and a high-voltage coil is wound at the outer part of the high-voltage coil supporting bar. The co-wound high-voltage and low-voltage coil is characterized in that the high-voltage coil supporting bar is provided with a protruding end relative to the high-voltage coil, a low-voltage soft paper barrel is arranged at the outer part of the protruding end of the high-voltage coil supporting bar, a low-voltage coil supporting bar is arranged at the outer circumference of the low-voltage soft paper barrel, and a low-voltage coil is wound at the outer part of the low-voltage coil supporting bar. According to the invention, the problems of complex winding process and much tooling equipment of the high-voltage and low-voltage coil in the prior art are solved. The co-wound high-voltage and low-voltage coil has the advantages of simple structure, simple winding process, high production efficiency and low cost.

The invention discloses a forming mold and method for an ultra-fine grain hollow magnesium alloy profile. The forming mold comprises a base, a concave die outer sleeve, a concave die inner sleeve, an extruding needle, an extruding shaft and an extruding pad, wherein the concave die inner sleeve is provided with a forming concave die. The forming method the following steps: (1) fixedly connecting the extruding pin and the extruding shaft with an inner sliding block and an outer sliding block of a double-acting extruding machine; (2) heating an ultra-fine grain hollow cylinder blank above a re-crystallization temperature; (3) putting the heated blank into a feeding section of the forming concave die; (4) starting the double-acting extruding machine to position the extruding needle, and pushing the extruding shaft and the extruding pad through the outer sliding block to extrude the blank; and (5) finally forming a tubular product by virtue of the extrusion of the outer sliding block of the extruding machine. According to the forming mold and method, the continuous plasticity of the magnesium alloy tubular product in the machining process can be effectively improved, the mechanical property can be enhanced, and the large-batch production machining can be realized.

The invention discloses a secondary mold opening device for micro-pore injection-molding-foaming and in-mold-decoration composite molding and a technology. The device comprises a male mold, a female mold, a film for in-mold decoration and a driving mechanism, wherein the male mold and the female mold are oppositely arranged. The film is arranged on the inner wall of the female mold in an attached mode; the driving mechanism is connected with the female mold; before filling, the driving mechanism drives the female mold to move till the size of a mold cavity is smaller than the size of a part; after a mixture melt of a polymer and a foaming agent is injected into the mold cavity and before gas is nucleated, the driving mechanism drives the female mold to be rapidly backed till the size of the mold cavity is coincident with the size of the part; after the part is completely foamed, the driving mechanism drives the female mold to be backed to take out the part. According to the secondary mold opening device, the nucleating efficiency in the foaming process of micro-pore injection-molding-foaming and in-mold-decoration composite molding is effectively improved, the pore foaming form of a product is improved, and the quality of the product is improved.

The invention relates to a purifying method of high-polymer materials, in particular to a purifying method of a crude polyaryletherketone product. The purifying method includes using mixed solution of formic acid solution and acetylacetone, and washing and centrifuging the crude polyaryletherketone product; washing and centrifuging by formic acid solution; finally washing and centrifuging by water and drying to obtain pure polyaryletherketone product. The purifying method has the advantages of simplicity and feasibility in operation, few technical steps and high thermal efficiency, and after-treatment cost is greatly reduced. Acetylacetone can be complexed with catalyst metal ions, and catalyst metal ions can be removed from the crude product. Via three times of washing, metal ion content in the crude polyaryletherketone product is lowered to 20 ppm, metal ions and residual organic solvent of the polyaryletherketone product can be effectively removed, and product quality is guaranteed. Meanwhile, the solvent can be recycled, so that the purifying method is low in cost and environment friendly.