192results about How to "Reduce process steps" patented technology

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention belongs to the technical field of lithium batteries, and discloses a lithium nickel manganese oxide positive electrode material, a preparation method thereof and a lithium ion battery. Wherein the lithium nickel manganese oxide positive electrode material has a regular truncated octahedron single crystal structure, and the ratio K of a (111) crystal face orientation parameter to a (100) crystal face orientation parameter in an XRD (X-Ray Diffraction) spectrogram of the lithium nickel manganese oxide positive electrode material is 1-1.6. The lithium nickel manganese oxide positive electrode material provided by the invention has excellent rate capability and cycling stability, and can be well applied to production and manufacturing of lithium ion batteries.

The present invention discloses a lead frame for chip packaging, a preparation method and a chip packaging structure. The lead frame includes a carrier sheet, a first solder resist ink layer and a plurality of unit circuits arranged in a matrix, the unit circuit includes a plurality of electrodes, the electrodes include a top electrode and a bottom electrode; the top electrode is arranged on the top surface of the first solder resist ink layer; corresponding to each unit circuit, the first solder resist ink layer includes a bottom electrode hole corresponding to the electrode, the bottom electrode is arranged in the bottom electrode hole, and the top of the bottom electrode is fixed on the bottom surface of the top electrode; the carrier sheet is peelably attached to the first solder resist ink layer and the bottom surface of the bottom electrode. The lead frame preparation process of the present invention has few steps, a simple process and low cost.

The invention provides a back contact solar cell and a preparation method thereof, and belongs to the technical field of solar cells, and the preparation method comprises the steps: depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of an n-type silicon wafer, and sintering high-temperature silver paste in a pre-designed interdigital region of an N region on the back surface of the silicon wafer to form a first electrode; then, the tunneling oxide layer, the doped polycrystalline silicon layer and the mask layer in the interdigital region of the back P region are ablated through laser; depositing an amorphous silicon layer and a TCO layer on the back surface of the n-type silicon wafer; sintering low-temperature silver paste on the TCO layer of the P region to form a second electrode; and finally, scanning a grid line formed by sintering the high-temperature silver paste through laser, and melting the amorphous silicon layer, the TCO layer and the mask layer on the grid line and around the grid line, so that the first electrode is isolated from the second electrode. The high-temperature silver paste is used for partially replacing the low-temperature silver paste, so that the use cost of the paste is reduced; through laser scanning grid line ablation, a gap region does not need to be manufactured independently, the manufacturing process is simplified, and the manufacturing cost is reduced.

The invention belongs to the technical field of recycling of waste blended textiles, and particularly discloses a method for oxidative depolymerization of waste blended textiles into alpha-hydroxy acid and terephthalic acid, which comprises the following steps: adding waste blended textiles, a solid acid catalyst and a reaction solution into a catalytic reaction kettle, filling a certain amount of air and / or oxygen, and reacting for 2-4 hours; the method comprises the following steps: adding alpha-hydroxy acid into a reaction kettle, heating to a specified temperature, stirring, carrying out selective oxidative depolymerization, after the reaction is finished, filtering, concentrating, separating and purifying the product to obtain terephthalic acid, glycollic acid and lactic acid, and taking terephthalic acid and alpha-hydroxy acid as depolymerization products of blended textiles and also as catalysts to participate in depolymerization of blended textiles. According to the method, the autocatalysis process of depolymerization conversion of the waste blended textiles is achieved, the product composition is simple and easy to recycle, carbon atoms in the raw materials are fully utilized, the requirement of green chemistry is met, depolymerization conversion of multiple components in the waste blended textiles is achieved through a one-pot method, the process steps are few, economic benefits are high, and actual operation is simple.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: providing a solar cell precursor which is provided with a first surface and a second surface which are opposite to each other; forming a seed layer on the local area of the first surface and / or the local area of the second surface, wherein the film layer to which the surface of the seed layer belongs is conductive; an insulating layer is formed on the surface where the seed layer is located, the insulating layer does not cover the seed layer or covers part of the seed layer, and the insulating layer is provided with an opening exposing at least part of the seed layer; and electroplating an electroplating layer on the seed layer exposed out of the opening. Another preparation method of the solar cell comprises the following steps: providing a solar cell precursor, wherein the solar cell precursor is provided with an antireflection layer; forming a metal-containing slurry on a local region of the antireflection layer; carrying out sintering treatment on the slurry to enable the slurry to burn through the antireflection layer, converting the slurry into a seed layer after sintering treatment, and forming electric connection between the seed layer and the doped silicon layer in the solar cell precursor; and plating a plating layer on the seed layer. The preparation method of the solar cell and the solar cell have the advantage of few process steps.

The invention belongs to the technical field of recycling of waste blended textiles, and particularly discloses a method for converting waste blended textiles into ethylene glycol and 1, 4-cyclohexanedicarboxylic acid, which is characterized in that under the action of a multifunctional solid acid catalyst and H2, the waste blended textiles are simultaneously depolymerized and converted into micromolecular chemicals, and the micromolecular chemicals are recycled. Compared with an existing method for depolymerizing and utilizing a single component in the waste blended textiles, the method has the advantages that simultaneous depolymerizing and utilizing of multiple components in the waste blended textiles are achieved, the method is few in process step, high in economic benefit, simple in actual operation and environmentally friendly, the energy consumption in the waste blended textile recycling process is reduced, and the recycling cost is reduced. And meanwhile, the side reaction and subsequent separation cost is reduced, and the process economy is improved.

The invention provides a wide bandgap semiconductor trench gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure and a manufacturing method thereof. In the structure, an N + current expansion layer is positioned in an upper region of an N-epitaxial layer; the P-well region is located on the N + current expansion layer, and the source N + region is located on the P-well region; the plurality of trench gate electrodes are arranged at intervals along the horizontal direction, and a first source P + region is arranged between every two adjacent trench gate electrodes in the middle region; the trench gate electrode penetrates through the source N + region, the P-well region and the N + current expansion layer in the longitudinal direction and extends into the N-epitaxial layer; a second source P + region is arranged at the bottom of the trench gate electrode; the P-type connection region is connected with the plurality of second source P + regions in the second direction; an interlayer dielectric layer is arranged above the trench gate electrode; the N + contact region is arranged at the first source P + region in an extending mode in the first direction, and the Schottky contact region is located above the N + contact region. The structure can improve the current density of the device, improves the conduction characteristic of the device, can also form a net-shaped P-type region protection gate electrode, and improves the dynamic reliability of the gate electrode of the device.

The present application is an optical cable joint box, comprising a box cover (1) and a box bottom (2) connected to the box cover (1), wherein the box cover (1) and the box bottom (2) are integrally formed by injection molding, a connecting edge (21) is injection molded between the two, the connecting edge (21) is in the shape of a strip as a whole, and the strip structure is composed of a plurality of sheet-shaped fixing sheets, the fixing sheets comprising a first fixing sheet (21a) and a second fixing sheet (21b) arranged in a staggered strip shape, the box cover (1) and the box bottom (2) are integrally formed by injection molding, and the connecting edge (21) is simultaneously injection molded between the two to achieve an overall connection, which not only saves process steps, but also achieves a higher level of sealing connection between the two, and the connecting edge (21) is composed of staggered strip-shaped fixing sheets, and the staggered structure has the effect of staggered positioning and buffering extrusion when bending.

The invention provides an etching method of a film layer located on the surface of the side wall of an opening, the etching method is applied to a semiconductor device, the semiconductor device is provided with the opening, the surface of the side wall of the opening is plated with a preset film layer, the method comprises the steps that the semiconductor device is placed on a base station, and a to-be-etched area of the preset film layer comprises a plurality of sub-areas arranged in the first direction; and etching a plurality of sub-regions of a preset film layer on the side wall of the opening in the semiconductor device by using an ion beam until all regions to be etched of the preset film layer are removed, the incident angle of the ion beam and the surface where the semiconductor device is located form a first angle, and the value range of the first angle is-90 degrees to 90 degrees and does not include-90 degrees, 0 degree and 90 degrees. According to the method, only one process is needed, the process steps are greatly reduced, the opening does not need to be filled with a filling material, and therefore the problem that for some holes with small diameters, the filling process is large in difficulty is solved.

The invention relates to the technical field of ceramic pad production equipment, and particularly discloses a ceramic welding pad compression molding device which comprises a clamping and pressing structure, a pad conveying structure and a pad conveying structure, the pad conveying structure is fixedly arranged at the rear end of the clamping and pressing structure, and the pad conveying structure is fixedly arranged on the left side of the pad conveying structure; through the automatic unwinding, cutting-off and wheel cutting units, the production speed can be greatly increased, the process steps and the manual operation time are reduced, and therefore the overall production efficiency is improved; automatic equipment can replace manual work for repeated work, so that the labor intensity of workers is reduced, and the working comfort is improved; automatic equipment can realize accurate control, and errors caused by human factors are reduced, so that the quality and the consistency of products are improved; an automatic system generally has certain flexibility, parameters can be adjusted according to production requirements, and the automatic system is suitable for production of ceramic welding liners of different specifications and types, such as production of ceramic liners of different lengths and widths.

The invention provides an inertia friction welding auxiliary machining device for dissimilar materials and a working method of the inertia friction welding auxiliary machining device, and belongs to the technical field of friction welding. The problem that in the prior art, the heat preservation effect cannot be improved at any time of welding according to the process requirement is solved. The device comprises a main shaft side box body, a main shaft side clamp, an external blowing assembly, a main shaft side to-be-welded piece, a movable sliding table box body, a lathe bed, a tailstock side clamp, a tailstock side to-be-welded piece and a heating mechanism, the main shaft side box body is installed on one side of the lathe bed, and the movable sliding table box body is installed on the other side of the lathe bed in a sliding mode through a movable sliding table rail; the main shaft side clamp is installed in the main shaft side box body through the main shaft fixing seat, the external blowing assembly is arranged on the outer side of a welding area of a main shaft side to-be-welded piece, the tailstock side clamp is installed in the movable sliding table box body through the tailstock fixing seat, and the heating mechanism is arranged on the outer side of the welding area of the tailstock side to-be-welded piece. The device is mainly used for protecting the welding area of friction welding.

The ingot casting production line comprises a transferring and putting system, a material melting system, a chain type ingot casting system, a demolding system, a collecting system and a control system. The transferring and putting system is used for transferring the material ton bags, breaking the ton bags and putting the materials into the material melting system; the material melting system is used for receiving the materials, melting the materials to form molten materials and supplying the molten materials to the chain type ingot casting system; the chain type ingot casting system comprises a chain wheel and chain circulating motion mechanism and a plurality of single ingot molds, and the chain type ingot casting system is used for receiving molten materials in the corresponding single ingot molds and cooling the molten materials to form single cast ingots; the demolding system is used for demolding the single cast ingot formed by cooling in the single-ingot mold and falling the single cast ingot out of the corresponding single-ingot mold; the collecting system is used for collecting the single cast ingot falling from the single ingot mold; the control system is in communication connection with the conveying and putting system, the material melting system, the chain type ingot casting system and the demolding system and controls operation of the conveying and putting system, the material melting system, the chain type ingot casting system and the demolding system.

The invention relates to an oxygen evolution catalyst for hydrogen production through electrolysis of proton exchange membrane water, a membrane electrode and a preparation method of the membrane electrode, and the oxygen evolution catalyst is iridium oxide in a nanoparticle form and contains 2-2.5% of crystal water; the preparation method of the catalyst comprises the following steps: carrying out ultrasonic treatment on an iridium salt solution, mixing the iridium salt solution with magnesium sulfate and water, carrying out ultrasonic treatment, volatilizing a solvent, drying, carrying out ball milling to obtain powder, carrying out high-temperature calcination, dissolving with dilute acid, carrying out suction filtration with water and ethanol until the conductivity is less than 10 [mu] s / cm, carrying out vacuum drying to remove moisture, and grinding to obtain the catalyst. The membrane electrode comprises the catalyst powder prepared by the method and an anode catalyst layer formed by perfluorinated sulfonic acid resin; and the cathode catalyst layer is formed by Pt / C and perfluorosulfonic acid resin. The oxygen evolution catalyst provided by the invention has high activity and high stability, magnesium sulfate is adopted in the preparation method, and the oxygen evolution catalyst has the advantages of simple operation, low cost and the like.

The invention discloses electrode production equipment and an electrode diaphragm. The electrode production equipment comprises a feeding machine, a belt rolling and pressing mechanism, a roller rolling and pressing mechanism, a composite roller, a detection mechanism and an overturning winding and unwinding mechanism, the feeding machine is used for mixing and uniformly stirring the materials, so that the materials are fiberized; the upper discharging nozzle of the feeder is arranged at the feeding end of the rolling channel; the thinning roller and the thinning material conveying roller are matched with each other, so that the thick film sheet is rolled into a thin film sheet; the thinning conveying roller and the compounding roller are matched with each other to compound the thin film sheet and the to-be-compounded film to form a finished film; the detection mechanism is used for detecting the alignment degree of a thin film piece on the finished product film and the to-be-compounded film and detecting the thickness of the film piece; the unwinding group, the compounding roller and / or the thinning material conveying roller rotate to release a to-be-compounded film; and meanwhile, the finished film is dragged, one end of the finished film is fixed to the winding set, and the winding set works for winding. According to the electrode diaphragm manufactured by adopting the electrode production equipment, the loading capacity of a single face is 12mg / cm < 2 >-24mg / cm < 2 >, the tape conveying path is simplified, and automatic operation can be realized only by manually guiding the tape once.

The invention provides an auxiliary cooling device for friction welding of a ring pipe structure and a working method of the auxiliary cooling device, and belongs to the technical field of friction welding. The problems that in the prior art, due to the fact that the surface of an inner ring of a large-diameter-thickness-ratio ring material dissipates heat slowly, the cooling speed of a welding area is uneven, residual stress is increased, the strength of a welding joint is affected, and due to the fact that the surface of the inner ring dissipates heat slowly, microstructure changes are uneven, and the mechanical property of the material is affected are solved. The device comprises a tailstock side clamp, a main shaft side clamp, an inert gas connecting pipe, a gas nozzle and a cooling medium spraying mechanism, the tailstock side clamp is installed in a movable sliding table box body of friction welding equipment, a tailstock side part to be welded is clamped in the tailstock side clamp, a main shaft side part to be welded is clamped in the main shaft side clamp, and the inert gas connecting pipe is connected with the gas nozzle. An inert gas connecting pipe is arranged in the main shaft side to-be-welded part, the outlet end of the inert gas connecting pipe is connected with the gas nozzle, and a cooling medium spraying mechanism is arranged on the inner side of the tailstock side to-be-welded part. The device is mainly used for cooling the welding seam of friction welding.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: providing a solar cell precursor which comprises a conductive layer and an insulating layer located on the conductive layer; forming a conductive paste covering a local area of the insulating layer, wherein the conductive paste has a triangular cross section; the conductive slurry is sintered to form a seed layer penetrating through the insulating layer to be in contact with the conductive layer, and the seed layer has a triangular cross section; and forming a plating layer covering the seed layer exposed outside the insulating layer using a plating process to form a gate line including the seed layer and the plating layer, the gate line having a triangular cross section. The electroplated layer has the triangular cross section, so that the light irradiated on the electroplated layer can be reflected to the active region of the solar cell.

The invention discloses a cationic polymer nano-microsphere emulsion which is prepared from the following raw materials in percentage by mass through a soap-free emulsion polymerization method: 10% of a hydrophobic monomer; 0.2%-2% of a cationic monomer; 0.02% to 0.14% of a cationic water-soluble azo initiator; and the balance of deionized water. The invention relates to a preparation method and application thereof in antifibrillation of lyocell knitted fabric. According to the method, during high-temperature baking, the adsorbed nanospheres can be diffused into a discontinuous film, hydrophobic chain segments of the nanospheres are exposed in air, so that the surfaces of the hydrophilic fibers are changed into hydrophobic surfaces, the hydrophobicity of the fibers is enhanced, and the swelling degree of the fibers is reduced due to the hydrophobicity. Under the action of wet state and friction, the fibrillation tendency of the lyocell fiber is obviously prevented. According to the method, the anti-fibrillation performance of the lyocell fiber is obviously enhanced, meanwhile, the influence on the mechanical property of the fiber is small, in addition, the process steps are obviously reduced, and the cost is reduced.

The invention discloses a three-dimensional dynamic random access memory and a manufacturing method thereof, relates to the technical field of memories, and aims to improve the storage density of the dynamic random access memory, increase the contact area between a source region and a contact structure or between a drain region included in a transistor and a capacitor, reduce contact resistance and improve electric leakage. The three-dimensional dynamic random access memory comprises a plurality of memory units distributed in a three-dimensional array and a medium structure used for separating different memory units. Each memory cell includes a transistor and a capacitor. The transistor comprises a grid electrode, a grid dielectric layer, a channel region, a source region and a drain region, the length direction of the channel region is parallel to the second direction, and the two side walls of the channel region in the length direction are recessed inwards relative to the side walls of the corresponding first medium parts to form notches. And the source region and the drain region cover the inner wall of the notch. The manufacturing method of the three-dimensional dynamic random access memory is used for manufacturing the three-dimensional dynamic random access memory.

The invention provides a server. The server comprises a case, a mainboard, a fan backboard and a connecting structure. The mainboard and the fan backboard are arranged on the bottom wall of the case in a spaced mode. The mainboard is connected with the fan backboard through a connecting structure. The connecting structure comprises a flexible circuit board, a plurality of first connectors and a plurality of second connectors. And the plurality of first connectors and the plurality of second connectors are connected in a one-to-one correspondence manner through the flexible circuit board. The flexible circuit board comprises a plurality of first circuits. One end of each first line is connected with one first connector, and the other end of each first line is connected with one second connector. The plurality of first connectors are connected with the mainboard, and the plurality of second connectors are connected with the fan backboard. According to the connection structure, the occupied space in the server is smaller, so that the internal layout of the server is cleaner and tidier.

The present application mentions a soft magnetic composite material and a preparation method thereof, wherein the preparation method of the soft magnetic composite material is to coat nano-scale particles on the surface of soft magnetic powder by ultrasonic vibration, and then undergo ultrasonication, annealing and other steps, while controlling the reaction conditions, to obtain an iron-based soft magnetic composite material. The coating layer formed by ultrasonic vibration treatment can improve the high-frequency magnetic properties of the soft magnetic powder, thereby effectively reducing the high-frequency loss of the soft magnetic composite material.

The invention discloses a method for preparing a ferroelectric crystal optical superlattice by using a pyroelectric effect, the superlattice and application, and belongs to the field of electronic and optical devices. The method comprises the following steps: preparing a ferroelectric crystal material carrying an electrode pattern; the ferroelectric crystal material carrying the electrode pattern is heated, the heating temperature is 50-200 DEG C, and within the temperature range, the ferroelectric crystal material carrying the electrode pattern excites the polarization reverse direction of the ferroelectric crystal material by using the pyroelectric performance of the ferroelectric crystal material; the annealing step is carried out, and the annealing rate is 50-150 DEG C / h; and heating and annealing are cycled for 1-10 times to obtain the aluminum alloy. The limitation of an external electric field polarization method on different electrode structures is broken through by creating a novel polarization process, different superlattice crystals based on electrodes of various structures are prepared, and the application scene and the application field of ferroelectric crystal materials are further expanded.

The utility model relates to the technical field of plate surface treatment, in particular to a feeding mechanism for plate surface treatment. A plate surface treatment feeding mechanism comprises a jacking assembly which moves in the direction perpendicular to the ground and is used for driving a plate to move in the direction perpendicular to the ground; and the pushing assembly is arranged above the jacking assembly and moves in the direction away from or close to the jacking assembly. The feeding structure has the advantages that the feeding structure does not depend on vacuum suction of a suction cup any more, the problem that the plate cannot be sucked due to the rough surface does not need to be worried about, meanwhile, the risk that the sucked plate falls off from the air during power failure does not exist, the plate feeding efficiency is improved, the safety risk is reduced, and the production cost is reduced. Compared with the prior art, the feeding mechanism has the advantages that damage and loss of plates are reduced, a more stable and reliable working process is provided for hot pressing treatment, and therefore the feeding mechanism improves working safety and reduces production cost while improving production efficiency.

A method for forming a semiconductor structure includes: providing a substrate, the substrate including a base and a layer to be etched, the substrate including a first region and a second region; forming a plurality of first initial mask structures on the first region, and forming a plurality of second mask structures on the second region, the initial first mask structures having a first width deviation dimension, and the second mask structures having a second width deviation dimension; forming a first sacrificial layer on the layer to be etched and the second mask structures; and etching the first initial mask structures to form a first mask structure based on a first advanced process control technology, the first mask structure having a second width dimension and a third width deviation dimension, wherein the third width deviation dimension is equal to the second width deviation dimension. By using the first advanced process control technology for algorithm optimization, the third width deviation dimension is made equal to the second width deviation dimension, eliminating the process step of forming an additional sacrificial layer and then covering the first mask structure.

The invention discloses a production process of a carbon fiber badminton racket, which is characterized by comprising the following steps of: mixing short-fiber-shaped carbon fibers and nylon according to a ratio to form a material of an injection-molded badminton frame; a material for injection molding of the ball frame is conveyed into an injection molding machine, and meanwhile the racket rod connected with the ball frame and the threading protective sleeve fixed in the ball frame are installed into a ball frame injection mold and are integrated through injection molding of the injection mold; polishing the racket rod and the racket frame which are formed into a whole through injection molding, and meanwhile, supplementing soil to the incomplete part; painting the outer surfaces of the bat rod and the bat frame after the soil is supplemented; and after painting is completed, threading, tightening, handle assembling and packaging are carried out. Granular carbon fibers and nylon are mixed in proportion, the racket frame and the racket rod are integrated through injection molding through an injection mold on an injection molding machine, after injection molding is completed, only the outer surface needs to be slightly polished, soil is supplemented, and therefore the production steps are reduced, the production complexity of the carbon fiber badminton racket is reduced, and the production efficiency is improved.

The utility model discloses an AC male socket and a socket assembly, the AC male socket comprises a female plug and an AC male socket, the AC male socket comprises a connection module, a plastic seat and a plastic shell; the connecting module comprises a live wire terminal, a zero wire terminal and a wire harness; a wiring part of the live wire terminal and a wiring part of the zero wire terminal are electrically connected with one end of the wire harness in a conducting manner; the connecting module and the plastic seat are formed by one-time injection molding, so that the plugging part of the live wire terminal and the plugging part of the zero wire terminal are exposed out of one end of the plastic seat, and the other end of the wire harness is exposed out of the other end of the plastic seat; wherein the plastic seat and the rubber shell are subjected to secondary injection molding, so that the plugging part of the live wire terminal, the plugging part of the zero wire terminal and one end of the plastic seat are positioned in the rubber shell, and the other end of the plastic seat and the other end of the wire harness are exposed out of the rubber shell; compared with an original assembly type structure, a gap generated by assembly is eliminated, the overall structural property of a product is improved, the manufacturing procedures are saved, the production efficiency is improved, and the cost is reduced.

The invention discloses a monolithic three-dimensional integrated transistor and a manufacturing method thereof, relates to the technical field of semiconductors, and aims to integrate a top-layer device compatible with a back end of line (BEOL) under a low thermal budget and realize logic interconnection between layers of the monolithic three-dimensional integrated transistor. The monolithic three-dimensional integrated transistor comprises a substrate, a first transistor and a second transistor, the first transistor is formed on the substrate; the first transistor is a thin film transistor, and an active region of the first transistor is made of indium gallium zinc oxide; and a second transistor formed on the first transistor. The second transistor is an organic thin film transistor; and the second transistor and the first transistor form a three-dimensional laminated complementary transistor. The manufacturing method of the monolithic three-dimensional integrated transistor comprises the following steps: providing a substrate; forming a first transistor on the substrate; the first transistor is a thin film transistor; forming a second transistor on the first transistor; and the second transistor and the first transistor form a three-dimensional laminated complementary transistor.

The invention relates to a large-breadth flexible damage sensing material and a preparation method thereof, belongs to the field of intelligent material preparation, and solves the problem that large-scale preparation of the large-breadth flexible damage sensing material is difficult in the prior art. The invention discloses a large-breadth flexible damage sensing material and a preparation method thereof. The large-breadth flexible damage sensing material comprises a flexible substrate layer, a conductive layer and a packaging layer, wherein the conductive layer is superposed on the flexible substrate layer; the packaging layer covers the conductive layer; the conductive layer is made of a laser-engraved polyimide film, a functional laser-induced graphene structure and an auxiliary separation structure which are etched by a laser engraving machine are arranged on the conductive layer, and the auxiliary separation structure comprises a film through hole and an edge cutting line; the large-breadth flexible damage sensing material provided by the invention is high in fineness, stable in performance and capable of meeting large-breadth sensing application, the preparation method of the large-breadth flexible damage sensing material is simple in step and high in preparation efficiency, and the large-breadth flexible damage sensing material which is stable in performance and high in fineness can be prepared in batches.

The invention discloses a silicon borate glass packaging structure of a crystal, which comprises a bottom plate, contact layers are respectively connected to four corners of the lower surface of the bottom plate, and a first electrode plate is connected to the upper surface of the bottom plate; a quartz wafer is arranged above the bottom plate, a second electrode plate is connected to the quartz wafer, and the second electrode plate is connected with the first electrode plate; a base is arranged above the bottom plate, a square through hole is formed in the position, corresponding to the quartz wafer, of the middle of the base, and the quartz wafer is located in the through hole; a cover plate is arranged above the base, and circular rings are connected to the positions, corresponding to the second circular holes, of the four corners of the lower surface of the cover plate. The quartz wafer is separated from the base, the manufacturing material of the base is changed into the borosilicate glass, and the quartz wafer independently vibrates and does not drive the base to vibrate during vibration, so that the stability of the resonator can be improved, and the service life of the resonator can be prolonged; the base is made of the silicon boric acid glass, and compared with a quartz material, the base has the advantage of being low in price, and therefore production cost can be reduced.

The utility model discloses a display panel and a display device. The display panel comprises a first transistor and a light detector, the first transistor comprises a first active part, a first source electrode and a first drain electrode, the first source electrode and the first drain electrode are connected to the first active part, and the light detector comprises a light sensing electrode, a first transmission electrode and a second transmission electrode, the display panel further comprises a first active layer and a first conductive layer. The first active layer comprises a first active part and a light sensing electrode. The first conductive layer is arranged on one side of the first active layer and comprises a first source electrode, a first drain electrode, a first transmission electrode and a second transmission electrode; wherein the material of the light induction electrode comprises indium gallium zinc oxide; according to the utility model, the optical detector can be integrated in the display panel without adding additional technological processes, so that the technological processes can be reduced and the technological cost can be reduced on the basis that the display panel realizes the optical detection function.