4results about How to "Reduce compound rate" patented technology

The application discloses a perovskite solar cell electron transport layer and a preparation method and application thereof, and relates to the technical field of solar cell preparation. The method comprises the following steps: adding O-phospho-L-threonine into a SnO2 colloidal aqueous solution, and performing ultrasonic treatment to obtain a PT-doped SnO2 solution; and coating the PT-doped SnO2 solution onto the surface of a substrate to form a perovskite solar cell electron transport layer. The unique molecular structure of O-phospho-L-threonine (PT) is utilized to realize a multiple synergistic modification effect, and the device performance is improved. The preparation process is simple. The application solves the problems of the existing perovskite solar cell, such as many defects of the electron transport layer, poor interface energy level matching, serious charge recombination and poor device stability.

This application relates to the photovoltaic field, providing a solar cell, a photovoltaic module, and a method for fabricating a solar cell. The solar cell includes: a substrate having a front side and a back side, the back side including a textured region and a flat region adjacent to the textured region, the textured region having a doped surface field, and the doped surface field containing a doped element, which is N-type or P-type; a tunneling dielectric layer located on the flat region of the back side of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer away from the back side of the substrate, the doped conductive layer containing a doped element, the type of which is the same as the type of which is doped in the doped surface field; and a back electrode, a portion of the bottom surface of the back electrode located within the doped conductive layer and in contact with the doped surface field, which can at least reduce the contact resistance of the solar cell.

The application relates to the technical field of solar cells, in particular to a solar cell, a solar cell preparation method, a laminated cell and a photovoltaic module. The solar cell comprises a substrate, the substrate comprises a first surface and a second surface arranged oppositely, and the substrate further comprises a third surface connecting the first surface and the second surface. The first surface comprises a first region close to the third surface and a second region away from the third surface, the distance between the first region and the second surface is smaller than the distance between the second region and the second surface, and the connecting position between the first region and the second region is a bevel. The first region comprises a first texture structure, and the third surface comprises a second texture structure. In the application, the first region is formed by performing a localized treatment on the cutting position on the first surface first, so that the first region is closer to the substrate, then the first region and the third surface are etched to remove the PN junction damage area and microcracks of the first region and the third surface, the recombination rate is reduced, the open circuit voltage and the circuit current are improved, and the conversion efficiency of the solar cell is improved.

The application relates to the technical field of solar cells, and provides a back contact cell, a cell assembly and a photovoltaic system. In the back contact cell, a groove is formed on a third region of a silicon substrate, the groove further comprises a first connecting region between the groove and a first region, a first doped layer is located on the first region, a second doped layer is located on a second region, and a third doped layer is located on the first connecting region. The third doped layer comprises a first body part and a first transition part between the first body part and the first doped layer and the first body part and the first doped layer. The doping concentration of a first doped element in the first doped layer is greater than or equal to 100 times the doping concentration of the first doped element in the first body part. In this way, the carrier recombination rate of the region near the groove can be reduced while achieving an excellent insulation isolation effect, the surface recombination loss is reduced, and the efficiency of the back contact cell is improved.