The invention discloses a method for manufacturing a back contact solar cell. According to the method, by means of the combination of the diffusion technology, the patterned dielectric mask technology, the etching technology, the laser insulation technology and the like, p+ doped regions and n+ doped regions which are mutually alternately ranked are manufactured on the back surface of a silicon substrate, band gaps for electric insulation of the p+/n+ regions are manufactured at the joints of the p+ doped regions and the n+ doped regions, and an n+ front surface field FSF with the low surface doping concentration is manufactured on the front surface of the silicon substrate; the front surface and the back surface of the silicon substrate can be passivated and the front surface of the silicon substrate can be anti-reflected through SiOx, SiNx, AlOx and other dielectric films, and eventually the back contact solar cell is manufactured by achieving metallized contact between the p+ doped regions and the n+ doped regions on the back surface of the silicon substrate through the silk-screen printing process and the co-sintering process. The method for manufacturing the back contact solar cell and an existing process for producing a crystalline silicon solar cell have something in common, no new manufacturing equipment needs to be introduced, all manufacturing procedures can be finished on an existing industrial production line, and therefore cost is low, and the process is simple, reasonable, safe and reliable.