The application relates to the technical field of solar cells, and provides a back contact
cell, a
cell assembly and a
photovoltaic system. In the back contact
cell, a groove is formed on a third region of a
silicon substrate, the groove further comprises a first connecting region between the groove and a first region, a first doped layer is located on the first region, a second doped layer is located on a second region, and a third doped layer is located on the first connecting region. The third doped layer comprises a first body part and a first transition part between the first body part and the first doped layer and the first body part and the first doped layer. The
doping concentration of a first doped element in the first doped layer is greater than or equal to 100 times the
doping concentration of the first doped element in the first body part. In this way, the carrier
recombination rate of the region near the groove can be reduced while achieving an excellent insulation
isolation effect, the surface recombination loss is reduced, and the efficiency of the back contact cell is improved.