Method for passivating crystal silicon P-type surface

A technology of crystalline silicon and crystalline silicon wafers, which is applied in the field of passivation of the P+ emitter junction surface of N-type batteries, can solve problems such as leakage current generation, and achieve the effects of improving conversion efficiency, reducing recombination rate, and good anti-reflection effect

Inactive Publication Date: 2011-06-29
ALTUSVIA ENERGY TAICANG
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  • Abstract
  • Description
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Problems solved by technology

However, since the SiNx deposited by PECVD carries a large amount of positive charges (~10 12 ), and thus will be in crystalline silicon P + The inversion layer is formed on the surface of the emitter junction, which leads to the generation of leakage current; therefore, it is necessary to find a suitable P + The surface passivation method is a key factor to realize the industrial development of N-type batteries

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  • Method for passivating crystal silicon P-type surface
  • Method for passivating crystal silicon P-type surface
  • Method for passivating crystal silicon P-type surface

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Experimental program
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Effect test

Embodiment 1

[0022] A kind of passivation method of crystalline silicon P-type surface, the concrete steps of this method are as follows:

[0023] (1) Use a 1Ωcm N-type crystalline silicon wafer for double-sided boron diffusion, and the diffused sheet resistance is 50 ohms / square, and then remove the borosilicate glass on the surface of the N-type crystalline silicon wafer after boron diffusion, and clean it ;

[0024] (2) Put the cleaned silicon wafer into concentrated nitric acid with a temperature of 110°C and a concentration of 69% for oxidation, and grow a layer of 3nm SiO on the surface of the silicon wafer after 30 minutes 2 TLC;

[0025] (3) In the grown SiO 2 A layer of SiNx film is deposited on the surface of the thin layer by plasma chemical vapor phase PECVD; the thickness of the SiNx film is 75nm, and the refractive index is 2.1.

[0026] Compared with the single-layer SiNx produced after sintering by the conventional method, the minority carrier lifetime of the passivated ...

Embodiment 2

[0028] A kind of passivation method of crystalline silicon P-type surface, the concrete steps of this method are as follows:

[0029] (1) Use a 1Ωcm N-type crystalline silicon wafer for double-sided boron diffusion, and the diffused sheet resistance is 50, and then remove the borosilicate glass on the surface of the N-type crystalline silicon wafer after boron diffusion, and clean it;

[0030] (2) Put the cleaned silicon wafer into concentrated sulfuric acid with a temperature of 120°C and a concentration of 90% for oxidation, and grow a layer of 1.1nm SiO on the surface of the silicon wafer after 45 minutes 2 TLC;

[0031] (3) In the grown SiO 2 A layer of SiNx film is deposited on the surface of the thin layer by plasma chemical vapor phase PECVD; the thickness of the SiNx film is 60nm, and the refractive index is 1.9.

Embodiment 3

[0033] A kind of passivation method of crystalline silicon P-type surface, the concrete steps of this method are as follows:

[0034] (1) Use a 1Ωcm N-type crystalline silicon wafer for double-sided boron diffusion, and the diffused sheet resistance is 50, and then remove the borosilicate glass on the surface of the N-type crystalline silicon wafer after boron diffusion, and clean it;

[0035] (2) Put the cleaned silicon wafer into potassium permanganate with a temperature of 70°C and a concentration of 16% for oxidation, and grow a layer of 2nm SiO on the surface of the silicon wafer after 10 minutes 2 TLC;

[0036] (3) In the grown SiO 2 A layer of SiNx film is deposited on the surface of the thin layer by plasma chemical vapor phase PECVD; the thickness of the SiNx film is 100 nm, and the refractive index is 2.2.

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Abstract

The invention discloses a method for passivating a crystal silicon P-type surface. The method comprises the following steps of: removing the borosilicate glass from the surface of an N-type crystal silicon wafer subjected to boron diffusion and cleaning the surface; generating a thin SiO2 layer on the cleaned silicon wafer surface; depositing a SiNx layer on the surface of the generated SiO2 thin layer by a plasma enhanced chemical vapor deposition (PECVD) method. The method provided by the invention is suitable for industrialization production and has characteristics of simple heat treatment process, good anti-reflection effect and good passivation quality.

Description

Technical field [0001] The present invention involves the passivation method of crystal silicon P -type surface, especially the N -type battery P + Passing method on the surface of the knot. Background technique [0002] Crystal silicon P -shaped passivation technology refers to the + Launch the surface growth or sedimentary medium layer, which effectively reduces the crystal silicon p -type surface or P + The surface composite rate of the transmitted knot. [0003] At present, the crystal silicon solar cell is mainly a traditional solar cell with P -type crystal silicon as a substrate. The passivation involved is mainly N + The passivation of the launch surface; the current PECVD SINX can effectively reduce N + The surface composite rate of the transmitted knot can also provide a good lighting effect, which has been widely used. [0004] Compared with the P -type crystal silicon battery, the N -type crystal silicon battery has the advantages of high efficiency and low optical de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 董经兵宋文涛陶龙忠邢国强
Owner ALTUSVIA ENERGY TAICANG
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