246 results about "Boron diffusion" patented technology

The utility model relates to a filter assembly, a tail gas treatment device and boron diffusion production equipment, the filter assembly comprises a filter element and a filter cartridge, the filter element is provided with a first end and a second end along a first direction, and the filter element is provided with a plurality of filter through holes along the first direction; the filter element is positioned in the filter cartridge; the filter cartridge is provided with an air inlet and an air outlet; the air inlet is communicated with an exhaust pipe of a vacuum furnace of the boron diffusion production equipment, and the air outlet is communicated with a tail exhaust pipe of the boron diffusion production equipment; tail gas exhausted by the exhaust pipe can enter the filtering through hole through the gas inlet and the first end in sequence, and can be exhausted to the tail exhaust pipe through the second end and the gas outlet in sequence after being filtered; a plurality of water injection blind holes extending in the first direction are formed in the filter element, and openings of the water injection blind holes are formed in the second end; a first water injection port is formed in the filter cartridge and is communicated with the opening through a water pipe; and the filter element is made of a porous material. According to the technical scheme, harmful substances such as B2O3 in the tail gas can be fully and effectively removed, and the filtering efficiency is high.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a processing method thereof, a back contact laminated cell and a photovoltaic module, and the processing method comprises the step of texturing a substrate. And carrying out boron diffusion on the substrate to form a boron-doped layer and a borosilicate glass layer on the surface of the substrate. And performing laser etching on the first region and the second region of the substrate, and removing the boron-doped layer, the borosilicate glass layer and part of the substrate in the first region and the second region. And carrying out phosphorus expansion on the substrate, and forming a polycrystalline silicon layer and a phosphorosilicate glass layer on the surface of the substrate. And performing laser etching on the substrate to remove the phosphorosilicate glass layers in the second area and the third area. And texturing the substrate and removing the phosphorosilicate glass layer in the first region and the polycrystalline silicon layers in the second region and the third region to form a textured surface in the second region. And forming a passivation layer on the substrate. Electrode paste is printed in the first area and the third area and sintered. And sintering the back surface of the substrate. The design can improve the double-sided rate and the efficiency of the back contact battery.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention discloses a dynamic optimization method and system for a boron diffusion process of a photovoltaic cell and electronic equipment. Comprising the following steps: collecting process parameters and sheet resistance data, and associating the process parameters and the sheet resistance data to form a process parameter set; optimizing a process parameter set, removing noise data and incomplete data, and extracting an available feature data set; dividing the feature data set into a training set and a verification set, and training to obtain a nonlinear regression model for predicting resistance data under different feature data; carrying out validity verification on the nonlinear regression model, and constructing an optimization function to reduce a difference value between a predicted value and an actual value; and deploying a nonlinear regression model in the diffusion process, adjusting the process parameters of the diffusion process in real time according to the predicted value, and optimizing the obtained sheet resistance data. The problem that the boron diffusion process is difficult to accurately adjust by a traditional process control method can be solved.

The invention belongs to the technical field of photovoltaic cells, and particularly relates to a back contact photovoltaic cell, a back contact photovoltaic cell assembly and a preparation method, and the method comprises the steps: providing an N-type silicon wafer which is provided with a double-sided texturing structure, and the textured surface is of a pyramid structure after texturing; boron diffusion is carried out on the backlight surface of the silicon wafer to form a P + doping layer, and meanwhile, a lightly doped P-type region is formed on the illuminated surface of the silicon wafer through diffusion and dissipation; performing laser film opening on the backlight surface P + doping layer to form P region and N region structures which are distributed in a staggered manner; depositing a tunneling oxide layer and a phosphorus-doped amorphous silicon layer in the N region, and annealing the tunneling oxide layer and the phosphorus-doped amorphous silicon layer to form an N + polycrystalline silicon layer; printing etching slurry on the surface of the P region, performing etching slurry film opening, removing phosphorosilicate glass and forming an isolation gap between the P region and the N region; and the film is opened by printing etching slurry, so that the suede cannot generate thermal damage.

The invention relates to the technical field of solar cells, and particularly discloses a TOPCon cell with a domain surface structure and a preparation method of the TOPCon cell. The TOPCon battery comprises an N-type silicon substrate, the front surface of the N-type silicon substrate is divided into an emitter region and a non-emitter region, the emitter region is of a planar structure, the non-emitter region is of a pyramid textured structure, and the boron doping concentration of the emitter region is higher than that of the non-emitter region. According to the invention, the silicon oxide layer is generated in the emitter region through the laser oxidation process, so that local planarization is realized; in combination with selective boron diffusion doping, the contradiction between the contact resistance and the light absorption efficiency of the traditional TOPCon cell is solved; the specific process comprises the steps of alkali polishing, laser oxidation, texturing, doping, passivation, electrode printing and the like. And the process is stable, is compatible with the existing production line, and has remarkable industrial application value.

The present disclosure relates to the technical field of solar cells. Disclosed are a solar cell, a preparation method therefor and a use thereof. A P-type doped region and an N-type doped region are alternately arranged on the back surface of a crystalline silicon substrate; a boron diffusion doped layer, a first passivation layer and a first anti-reflection layer are sequentially formed in the P-type doped region; and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second anti-reflection layer are sequentially formed on the surface of the crystalline silicon substrate in the N-type doped region. The P regions of traditional TBC cells mostly adopt a two-step process of depositing intrinsic amorphous silicon and performing boron diffusion to form a polycrystalline silicon layer. However, the P region of the present disclosure does not contain a polycrystalline silicon layer, and can be prepared by a one-step boron diffusion process, which can reduce the process steps and shorten the process time. The interaction between laser and the polycrystalline silicon in the P region is also avoided, the difficulty of cell patterning is reduced, and the production yield of cells can be greatly improved.

The invention discloses a half photovoltaic cell and a preparation method thereof, and the method comprises the following steps: S1, carrying out the texturing of an original silicon wafer, and forming a semi-finished cell; s2, carrying out boron diffusion treatment on one surface of the semi-finished battery piece to form a PN junction, namely a front surface; s3, laser is adopted to complete slotting with the specified line number on the front face of the semi-finished battery piece subjected to boron diffusion treatment according to a set pattern; s4, enabling the slotted semi-finished battery piece to enter a BSG and alkali polishing process, cleaning and removing a surface damage layer; and S5, after tunneling oxide layer preparation and doped polycrystalline silicon deposition are sequentially carried out on the back surface of the cleaned semi-finished battery piece, grooving treatment is carried out on the back surface of the cleaned semi-finished battery piece again, and the grooving position corresponds to the grooving position on the front surface of the cleaned semi-finished battery piece. According to the invention, after the boron diffusion and tunneling doped polycrystalline silicon processes, the front and back surfaces of the cell are slotted through the laser, and the repair and passivation are realized by using the subsequent existing process without adding passivation equipment, so that the space is saved, and the cost and the recovery difficulty are reduced.

The invention relates to a preparation process of a TBC battery. The TBC battery comprises a substrate; the substrate is polished and cleaned; the doping treatment process comprises a first doping process and a second doping process, the first doping process is used for carrying out boron diffusion, and the second doping process is used for carrying out phosphorus diffusion; performing a high-temperature annealing process of high-temperature junction pushing on the substrate treated by the doping treatment process; carrying out PSG removal and front surface and side surface alkali polishing processes on the substrate treated by the high-temperature annealing process; and depositing an aluminum oxide layer, a silicon nitride layer and an electrode on the substrate. Boron expansion and phosphorus expansion are respectively carried out on the substrate, and junction pushing is not carried out; boron diffusion and phosphorus diffusion knot pushing processes are carried out in the same high-temperature environment, so that the thermal history is shortened, the energy consumption is reduced, the process flow is simplified, the production cost is reduced, and the production efficiency is improved.

The invention belongs to the technical field of solar cell manufacturing, and provides a step temperature cycle propulsion boron diffusion process and application thereof. The boron diffusion technology comprises the steps that a silicon wafer is placed in boron diffusion equipment, pre-oxidation, pre-deposition and stepped temperature circulation boron diffusion propelling are sequentially carried out on the silicon wafer, and the stepped temperature circulation boron diffusion propelling procedure comprises an initial stage, a middle stage and a final stage which are sequentially carried out. A circulation mode of heating oxygen-free boron expansion and pushing junction and then cooling oxygen-filled boron expansion and pushing junction is adopted in each stage for multiple times of circulation, and the heating temperature and the cooling temperature of each stage are optimized, so that a boron expansion doping layer is formed on the surface of the silicon wafer. According to the boron diffusion process, the oxidation temperature can be reduced, the concentric circle defect can be eliminated, the junction depth and the surface doping concentration of boron diffusion doping can be increased, the uniformity of boron diffusion doping can be improved, the FF, Jsc, Uoc and Eta of the battery can be further improved, the thermal budget can be reduced, and the service life of equipment can be prolonged.

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

The invention relates to the technical field of TOPCon batteries, in particular to a TOPCon battery and a preparation method thereof. The preparation method of the TOPCon battery comprises the following steps: texturing a silicon wafer; performing boron diffusion doping on the front surface of the silicon wafer; carrying out acid washing and alkali washing polishing on the back surface of the silicon wafer; a first tunneling layer, a first doped polycrystalline silicon layer, a second tunneling layer and a second doped polycrystalline silicon layer are sequentially deposited on the back face of the silicon wafer, high-temperature annealing is conducted on the silicon wafer, and temporary protection layers are formed in an emitting electrode grid line area and a non-emitting electrode grid line area on the back face of the silicon wafer; performing film opening treatment on the temporary protection layer in a non-emitter grid line area; forming a textured structure on a non-emitter grid line area on the back surface of the silicon wafer; and pickling the silicon wafer. According to the technical scheme, the absorption of sunlight by the TOPCon cell can be improved, and the conversion efficiency of the TOPCon cell can be improved.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention provides a passive film layer structure, a preparation method thereof and an application of the passive film layer structure in preparation of a solar cell, and relates to the technical field of solar cells, the passive film layer structure comprises a tunneling oxide layer, an aluminum oxide layer, a polycrystalline silicon layer and a doped polycrystalline silicon layer which are sequentially stacked on the back surface of a silicon substrate. The aluminum oxide layer is introduced between the traditional tunneling oxide layer and the doped polycrystalline silicon layer, and the polycrystalline silicon layer is additionally arranged below the doped polycrystalline silicon layer, so that a passivation contact structure with a multi-layer synergistic effect is constructed, the passivation performance is remarkably improved, boron is effectively prevented from being diffused to the tunneling oxide layer, the interface stability is improved, and the service life of the device is prolonged. The technical problems that in the prior art, the hole transmission capacity is poor, the passivation effect is poor, the interface is unstable, and the boron diffusion influence is large are solved.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The invention discloses a boron diffusion method, a preparation method of a solar cell and the solar cell. The boron diffusion method comprises the following steps: preparing an oxide layer on the surface of one side of a silicon substrate; boron source pre-deposition is carried out on the oxide layer; propelling the pre-deposited boron source, including performing a first propelling process in an oxygen-free atmosphere, and performing a second propelling process, a third propelling process and a fourth propelling process in an oxygen atmosphere; and cooling the pushed silicon substrate. According to the boron diffusion method, the preparation method of the solar cell and the solar cell, the inter-sheet and in-sheet uniformity of the square resistance on the surface of the cell can be improved, the contact loss of a metal semiconductor is reduced, the carrier recombination is reduced, and the cell efficiency is improved.

The invention provides a boron diffusion method of a TBC battery, a preparation method of the TBC battery and the TBC battery, and relates to the technical field of photovoltaic batteries. The boron diffusion method of the TBC battery comprises the following steps: sequentially carrying out gradient heating pre-oxidation and intermittent oxygen introduction boron diffusion on the back surface of a silicon substrate to obtain a silicon substrate with a BSG layer; wherein the gradient heating pre-oxidation comprises at least five stages of heat preservation pre-oxidation, and the temperature rise amplitude of every two adjacent stages is 5-15 DEG C. According to the boron diffusion method, a compact layered pre-oxidation layer is formed by setting gradient temperature rise before boron diffusion deposition, and intermittent oxygen diffusion is set during boron diffusion deposition, so that rapid diffusion of boron atoms is blocked, interface boron accumulation is inhibited, the BRL concentration is reduced, Auger recombination is reduced, the open voltage is improved, and the cell conversion efficiency is improved.

The invention relates to the technical field of solar cells, in particular to a TOPCon solar cell and a preparation method thereof. The preparation method comprises the steps of front surface texturing, boron diffusion, removal of BSG + alkali polishing, deposition of a back surface insulating layer, local grooving on the insulating layer, deposition of a tunneling oxide layer and a polycrystalline silicon layer in sequence in a local grooving area, phosphorus diffusion, removal of PSG + RCA, deposition of a passivation layer and an anti-reflection film layer, and silk-screen printing. According to the method, the insulating layer is deposited on the back surface of the silicon wafer, local grooving is carried out, the oxide layer / polycrystalline silicon layer and the printing electrode are tunneled in the grooving area, non-contact passivation is reserved, meanwhile, the carrier transmission path is optimized, the recombination loss is reduced, the passivation performance of the battery prepared through the method can be further optimized, and the service life of the battery is prolonged. The conversion efficiency of the battery is improved.

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

The invention provides a preparation method of a boron-doped selective emitter, the emitter and a TOPCon battery, and relates to the technical field of TOPCon batteries. The preparation method comprises the following steps: depositing a borosilicate glass layer on the front surface of a textured silicon wafer through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; removing the borosilicate glass layer in a non-fine grid region on the front surface of the silicon wafer through a laser patterning process to obtain the silicon wafer of which the borosilicate glass layer in a fine grid region on the front surface of the silicon wafer is reserved; forming a shallow doped region in a non-fine grid region on the front surface of the silicon wafer through a boron diffusion process, and forming a primary heavily doped region on a borosilicate glass layer in a fine grid region on the front surface of the silicon wafer; and pushing the boron source in the primary heavily doped region into the silicon wafer through an SE process to form a secondary heavily doped region so as to obtain the boron-doped selective emitter. The preparation method can reduce the proportion of concentric circles generated by silicon wafer oxygen precipitation caused by a high-temperature process, further reduces the contact resistivity of the front metal semiconductor, and improves the efficiency of the cell.

The invention provides a TOPCon battery and a preparation method thereof, and boron diffusion equipment, and the preparation method of the TOPCon battery comprises the steps: providing a silicon substrate, placing the silicon substrate in a boron diffusion furnace, introducing nitrogen into a furnace mouth region of the boron diffusion furnace, introducing oxygen and boron trichloride into the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, and introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, the ratio of the flow of the oxygen to the flow of the boron trichloride is alpha, and alpha is more than or equal to 3.5 and less than or equal to 4.5. The nitrogen can quickly purge reaction byproducts in a low-temperature area of the furnace mouth, and sufficient oxygen is provided to completely oxidize boron trichloride into a gaseous boron oxide precursor before the boron trichloride enters a high-temperature reaction area, so that the generation of viscous low-temperature boron oxide due to insufficient oxidation is avoided; and the generation and deposition of boron oxide crystals at the furnace mouth are inhibited from two dimensions of mass transfer process and chemical reaction completeness, and the yield and average photoelectric conversion efficiency of the TOPCon battery can be remarkably improved.

The invention discloses a multifunctional protection device and a manufacturing process thereof, belonging to the technical field of protection devices. A silicon dioxide layer is grown on a P-type single-crystal silicon wafer, a boron ion implantation window is photoetched on the front side of the P-type single-crystal silicon wafer, a light boron layer is doped on the front side of the P-type single-crystal silicon wafer by ion implantation, and the light boron layer is redistributed by high-temperature diffusion, a light phosphorus implantation window is photoetched on the front and back sides of the P-type single-crystal silicon wafer, a phosphorus layer is ion implanted on the front and back sides of the P-type single-crystal silicon wafer, and the phosphorus layer is redistributed by high-temperature diffusion, a concentrated boron diffusion zone window is photoetched on the front side of the P-type single-crystal silicon wafer, concentrated boron diffusion is performed on the front side, concentrated phosphorus layer diffusion windows are photoetched on the front and back sides of the P-type single-crystal silicon wafer, concentrated phosphorus layer diffusion is performed on both sides, a groove etching window is photoetched on the front side of the P-type single-crystal silicon wafer, silicon etching is performed to form an inner groove mesa structure, and metallization treatment is performed on the front and back sides of the P-type single-crystal silicon wafer to construct a metal layer.

The invention discloses a TOPCon solar cell boron diffusion quartz boat source saturation technology, and relates to the technical field of cell production, and the technology comprises the steps: starting a boron diffusion furnace tube system; feeding the new quartz boat into the furnace tube; adjusting the internal pressure of the furnace tube after pre-vacuumizing; detecting the sealing performance of the furnace tube; introducing oxygen into the furnace tube, and carrying out surface pretreatment on the quartz boat; the source introduction saturation stage comprises a low-temperature source introduction sub-stage and a high-temperature saturation sub-stage, in the low-temperature source introduction sub-stage, BCL3 gas and oxygen are introduced into the furnace tube for three times of source introduction operation, a purging step is set after each time of source introduction, and in the high-temperature saturation sub-stage, the temperature and pressure in the furnace tube and the flow of the introduced oxygen are adjusted for one time of saturation operation; gradually reducing the temperature in the furnace tube; opening a furnace door and taking out the quartz boat. According to the method, the BCL3 gas is introduced in the source saturation process, so that metal impurities on the surface of the quartz boat can be effectively removed while boron is saturated, and the problem that the yield and the efficiency are reduced due to online state difference of a new quartz boat is effectively solved.

The purpose of this invention is to disclose a silicon wafer boron expansion process data characterization system, including a boron expansion process data module and a sheet resistance data module. The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs. The beneficial effects of this invention are: by accurately matching the data collected by the boron expansion process data module and the sheet resistance data module using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs, on the one hand, it ensures that the data collected by each sheet resistance data module accurately corresponds to the data collected by the boron expansion process data module, accurately reflecting the adaptability of the data collected by the boron expansion process data module and facilitating timely adjustments to the boron expansion process; on the other hand, it facilitates big data processing of the data collected by the boron expansion process data module and the sheet resistance data module.

The embodiment of the present application provides a solar cell and a forming method thereof. The forming method of the solar cell comprises the following steps: providing a substrate; performing boron diffusion treatment on the substrate to form a boron-doped layer and a borosilicate glass layer which are sequentially stacked on the surface of the substrate, and the borosilicate glass layer has interstitial oxygen atoms; the boron diffusion treatment comprises a deposition stage and a pushing stage, the substrate is provided with a boron source and an oxygen source in the deposition stage; the temperature of a reaction chamber in the deposition stage is greater than that in the pushing stage; after the boron diffusion treatment, a passivation stage is performed, a passivation source is provided to the borosilicate glass layer, and the passivation source and the interstitial oxygen atoms react to form an oxygen-containing compound. The embodiment of the present application is beneficial to improving the performance of the solar cell.

The present invention relates to the field of solar cells. Disclosed are a lateral-vertical composite multi-junction TBC solar cell and a manufacturing method therefor. The TBC solar cell comprises an N-type silicon wafer. The front surface of the N-type silicon wafer is sequentially provided with a pyramid textured surface and a passivation layer; the back surface of the N-type silicon wafer is provided with a deposition region A and a deposition region B distributed in an interdigitated manner; a gap between the deposition region A and the deposition region B serves as an isolation region, and the surface of the isolation region is sequentially provided with the pyramid textured surface and the passivation layer; the surface of the deposition region A is sequentially provided with a boron diffusion layer A, a phosphorus diffusion layer A, a tunneling oxide layer A, a phosphorus diffusion layer B, the passivation layer and an electrode layer; the surface layer of the N-type silicon wafer located at the bottom of the deposition region B is a boron diffusion layer B, and the surface of the deposition region B is sequentially provided with a tunneling oxide layer B, a boron diffusion layer C, the passivation layer and the electrode layer. The TBC solar cell of the present invention has a lateral-vertical composite multi-junction structure, which is beneficial to further improving the cell conversion efficiency of the cell and also reducing the manufacturing cost and technical difficulty of the cell.

The invention provides a semiconductor device, electronic equipment and a preparation method of the semiconductor device. Relates to the technical field of semiconductors. The semiconductor device comprises a P-type transistor, the P-type transistor comprises a first pole, a second pole and a channel, and the first pole comprises boron; in addition, the semiconductor device further comprises a first film layer and a barrier layer, the first film layer is located on the first electrode, the first film layer comprises boron, and the boron content in the first film layer is larger than that in the first electrode; the barrier layer is stacked between the first electrode and the first film layer, and the barrier layer is used for inhibiting boron in the first film layer from diffusing into the substrate, for example, the barrier layer is used for inhibiting boron in the first film layer from diffusing into a channel of a P-type transistor. Therefore, the hole mobility of the channel layer can be improved, and the driving circuit of the P-type transistor is improved.

The invention discloses a processing method of a TOPCon solar cell based on laser oxidation and alkali corrosion, and belongs to a cell production method in the technical field of solar cells, and the technical scheme is as follows: S1, texturing and cleaning; s2, boron diffusion; s3, alkali polishing; s4, deposition is carried out; s5, annealing; s6, passivating treatment: scanning a grid line area of the silicon wafer by adopting ultraviolet or green pulse laser, inducing local oxidation of the polycrystalline silicon layer to form a high-density SiO2 passivation layer, immersing the silicon wafer into a KOH solution with the concentration of 5-10%, and removing psg in a non-grid line area to cause poly thinning; s7, front surface cleaning; s8, depositing front aluminum oxide; s9, depositing front silicon nitride; s10, depositing silicon nitride on the back surface; s11, carrying out silk-screen printing; s12, sorting is conducted; according to the laser oxidation and alkali corrosion-based TOPCon solar cell processing method provided by the invention, selective treatment processes of laser oxidation and alkali corrosion are combined, and the passivation effect is improved while the process complexity is reduced.

The application discloses a TBC solar cell and a preparation method thereof. The preparation method comprises two boron diffusion steps and two phosphorus diffusion steps, and a first dense tunneling oxide layer, a first non-dense tunneling oxide layer, a second dense tunneling oxide layer and a second non-dense tunneling oxide layer are deposited. While ensuring that the first and second polycrystalline silicon layers have high doping concentrations, the first and second dense tunneling oxide layers effectively prevent the diffusion depth of doping ions in the silicon substrate, thereby improving the collection efficiency of carriers and maintaining good passivation effects. In addition, the first electrode grid is embedded in the first non-dense tunneling oxide layer, and the second electrode grid is embedded in the second non-dense tunneling oxide layer, so that the contact effect is good, the absorption efficiency of the first and second electrode grids for the carriers transported in the transverse direction is enhanced, and compared with the prior art, the process difficulty is low and the error rate is low.

The application relates to a solar cell and a preparation method thereof, a laminated cell and a photovoltaic module. The preparation method of the solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a first surface; performing boron diffusion on the first surface of the substrate to obtain a boron diffusion layer, wherein the boron diffusion comprises: performing first deposition on the first surface of the substrate, wherein the first deposition comprises a first constant-temperature section; performing second deposition on the first surface of the substrate, wherein the second deposition comprises a second temperature-rising section and a second constant-temperature section; and performing third deposition on the first surface of the substrate, wherein the third deposition comprises a third temperature-rising section and a third constant-temperature section; and the gas input in the first deposition, the second deposition and the third deposition all comprises a boron source. The preparation method is simple and easy to implement, and can effectively improve the uniformity of sheet resistance.