The invention discloses a boron diffusion method of a crystalline silicon solar cell, wherein the method comprises the following steps: (1), arranging a silicon chip subjected to felting and cleaning processes in a diffusion furnace pipe, heating to 900 DEG C to 1100 DEG C, introducing nitrogen, a relatively large amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 5min to 60min; (2), keeping the temperature in the step (1), introducing nitrogen, a relatively small amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 15min to 80min; (3), keeping the temperature in the step (1) or heating to 910 DEG C to 1100 DEG C, introducing nitrogen, a relatively large amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 2min to 30min; and (4) finishing the diffusion process. With the adoption of the boron diffusion method, the high impurity concentration is formed within small depth range of the surface of the silicon chip, so as to be beneficial to forming of excellent ohm contact; the impurity concentration of the large depth range of a diffusion layer is reduced; the auger recombination and combination generated by nudged defect are reduced, the minority carrier lifetime is prolonged, so the property of the cell is enhanced.