170 results about "Boron diffusion" patented technology

The invention discloses a dynamic optimization method and system for a boron diffusion process of a photovoltaic cell and electronic equipment. Comprising the following steps: collecting process parameters and sheet resistance data, and associating the process parameters and the sheet resistance data to form a process parameter set; optimizing a process parameter set, removing noise data and incomplete data, and extracting an available feature data set; dividing the feature data set into a training set and a verification set, and training to obtain a nonlinear regression model for predicting resistance data under different feature data; carrying out validity verification on the nonlinear regression model, and constructing an optimization function to reduce a difference value between a predicted value and an actual value; and deploying a nonlinear regression model in the diffusion process, adjusting the process parameters of the diffusion process in real time according to the predicted value, and optimizing the obtained sheet resistance data. The problem that the boron diffusion process is difficult to accurately adjust by a traditional process control method can be solved.

The present disclosure relates to the technical field of solar cells. Disclosed are a solar cell, a preparation method therefor and a use thereof. A P-type doped region and an N-type doped region are alternately arranged on the back surface of a crystalline silicon substrate; a boron diffusion doped layer, a first passivation layer and a first anti-reflection layer are sequentially formed in the P-type doped region; and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second anti-reflection layer are sequentially formed on the surface of the crystalline silicon substrate in the N-type doped region. The P regions of traditional TBC cells mostly adopt a two-step process of depositing intrinsic amorphous silicon and performing boron diffusion to form a polycrystalline silicon layer. However, the P region of the present disclosure does not contain a polycrystalline silicon layer, and can be prepared by a one-step boron diffusion process, which can reduce the process steps and shorten the process time. The interaction between laser and the polycrystalline silicon in the P region is also avoided, the difficulty of cell patterning is reduced, and the production yield of cells can be greatly improved.

The invention discloses a half photovoltaic cell and a preparation method thereof, and the method comprises the following steps: S1, carrying out the texturing of an original silicon wafer, and forming a semi-finished cell; s2, carrying out boron diffusion treatment on one surface of the semi-finished battery piece to form a PN junction, namely a front surface; s3, laser is adopted to complete slotting with the specified line number on the front face of the semi-finished battery piece subjected to boron diffusion treatment according to a set pattern; s4, enabling the slotted semi-finished battery piece to enter a BSG and alkali polishing process, cleaning and removing a surface damage layer; and S5, after tunneling oxide layer preparation and doped polycrystalline silicon deposition are sequentially carried out on the back surface of the cleaned semi-finished battery piece, grooving treatment is carried out on the back surface of the cleaned semi-finished battery piece again, and the grooving position corresponds to the grooving position on the front surface of the cleaned semi-finished battery piece. According to the invention, after the boron diffusion and tunneling doped polycrystalline silicon processes, the front and back surfaces of the cell are slotted through the laser, and the repair and passivation are realized by using the subsequent existing process without adding passivation equipment, so that the space is saved, and the cost and the recovery difficulty are reduced.

The invention relates to a preparation process of a TBC battery. The TBC battery comprises a substrate; the substrate is polished and cleaned; the doping treatment process comprises a first doping process and a second doping process, the first doping process is used for carrying out boron diffusion, and the second doping process is used for carrying out phosphorus diffusion; performing a high-temperature annealing process of high-temperature junction pushing on the substrate treated by the doping treatment process; carrying out PSG removal and front surface and side surface alkali polishing processes on the substrate treated by the high-temperature annealing process; and depositing an aluminum oxide layer, a silicon nitride layer and an electrode on the substrate. Boron expansion and phosphorus expansion are respectively carried out on the substrate, and junction pushing is not carried out; boron diffusion and phosphorus diffusion knot pushing processes are carried out in the same high-temperature environment, so that the thermal history is shortened, the energy consumption is reduced, the process flow is simplified, the production cost is reduced, and the production efficiency is improved.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

The invention provides a TOPCon battery and a preparation method thereof, and boron diffusion equipment, and the preparation method of the TOPCon battery comprises the steps: providing a silicon substrate, placing the silicon substrate in a boron diffusion furnace, introducing nitrogen into a furnace mouth region of the boron diffusion furnace, introducing oxygen and boron trichloride into the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, and introducing nitrogen gas into the furnace mouth region of the boron diffusion furnace, the ratio of the flow of the oxygen to the flow of the boron trichloride is alpha, and alpha is more than or equal to 3.5 and less than or equal to 4.5. The nitrogen can quickly purge reaction byproducts in a low-temperature area of the furnace mouth, and sufficient oxygen is provided to completely oxidize boron trichloride into a gaseous boron oxide precursor before the boron trichloride enters a high-temperature reaction area, so that the generation of viscous low-temperature boron oxide due to insufficient oxidation is avoided; and the generation and deposition of boron oxide crystals at the furnace mouth are inhibited from two dimensions of mass transfer process and chemical reaction completeness, and the yield and average photoelectric conversion efficiency of the TOPCon battery can be remarkably improved.

The invention discloses a TOPCon solar cell boron diffusion quartz boat source saturation technology, and relates to the technical field of cell production, and the technology comprises the steps: starting a boron diffusion furnace tube system; feeding the new quartz boat into the furnace tube; adjusting the internal pressure of the furnace tube after pre-vacuumizing; detecting the sealing performance of the furnace tube; introducing oxygen into the furnace tube, and carrying out surface pretreatment on the quartz boat; the source introduction saturation stage comprises a low-temperature source introduction sub-stage and a high-temperature saturation sub-stage, in the low-temperature source introduction sub-stage, BCL3 gas and oxygen are introduced into the furnace tube for three times of source introduction operation, a purging step is set after each time of source introduction, and in the high-temperature saturation sub-stage, the temperature and pressure in the furnace tube and the flow of the introduced oxygen are adjusted for one time of saturation operation; gradually reducing the temperature in the furnace tube; opening a furnace door and taking out the quartz boat. According to the method, the BCL3 gas is introduced in the source saturation process, so that metal impurities on the surface of the quartz boat can be effectively removed while boron is saturated, and the problem that the yield and the efficiency are reduced due to online state difference of a new quartz boat is effectively solved.

The purpose of this invention is to disclose a silicon wafer boron expansion process data characterization system, including a boron expansion process data module and a sheet resistance data module. The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs. The beneficial effects of this invention are: by accurately matching the data collected by the boron expansion process data module and the sheet resistance data module using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs, on the one hand, it ensures that the data collected by each sheet resistance data module accurately corresponds to the data collected by the boron expansion process data module, accurately reflecting the adaptability of the data collected by the boron expansion process data module and facilitating timely adjustments to the boron expansion process; on the other hand, it facilitates big data processing of the data collected by the boron expansion process data module and the sheet resistance data module.

The embodiment of the present application provides a solar cell and a forming method thereof. The forming method of the solar cell comprises the following steps: providing a substrate; performing boron diffusion treatment on the substrate to form a boron-doped layer and a borosilicate glass layer which are sequentially stacked on the surface of the substrate, and the borosilicate glass layer has interstitial oxygen atoms; the boron diffusion treatment comprises a deposition stage and a pushing stage, the substrate is provided with a boron source and an oxygen source in the deposition stage; the temperature of a reaction chamber in the deposition stage is greater than that in the pushing stage; after the boron diffusion treatment, a passivation stage is performed, a passivation source is provided to the borosilicate glass layer, and the passivation source and the interstitial oxygen atoms react to form an oxygen-containing compound. The embodiment of the present application is beneficial to improving the performance of the solar cell.

The present invention relates to the field of solar cells. Disclosed are a lateral-vertical composite multi-junction TBC solar cell and a manufacturing method therefor. The TBC solar cell comprises an N-type silicon wafer. The front surface of the N-type silicon wafer is sequentially provided with a pyramid textured surface and a passivation layer; the back surface of the N-type silicon wafer is provided with a deposition region A and a deposition region B distributed in an interdigitated manner; a gap between the deposition region A and the deposition region B serves as an isolation region, and the surface of the isolation region is sequentially provided with the pyramid textured surface and the passivation layer; the surface of the deposition region A is sequentially provided with a boron diffusion layer A, a phosphorus diffusion layer A, a tunneling oxide layer A, a phosphorus diffusion layer B, the passivation layer and an electrode layer; the surface layer of the N-type silicon wafer located at the bottom of the deposition region B is a boron diffusion layer B, and the surface of the deposition region B is sequentially provided with a tunneling oxide layer B, a boron diffusion layer C, the passivation layer and the electrode layer. The TBC solar cell of the present invention has a lateral-vertical composite multi-junction structure, which is beneficial to further improving the cell conversion efficiency of the cell and also reducing the manufacturing cost and technical difficulty of the cell.

The invention provides a semiconductor device, electronic equipment and a preparation method of the semiconductor device. Relates to the technical field of semiconductors. The semiconductor device comprises a P-type transistor, the P-type transistor comprises a first pole, a second pole and a channel, and the first pole comprises boron; in addition, the semiconductor device further comprises a first film layer and a barrier layer, the first film layer is located on the first electrode, the first film layer comprises boron, and the boron content in the first film layer is larger than that in the first electrode; the barrier layer is stacked between the first electrode and the first film layer, and the barrier layer is used for inhibiting boron in the first film layer from diffusing into the substrate, for example, the barrier layer is used for inhibiting boron in the first film layer from diffusing into a channel of a P-type transistor. Therefore, the hole mobility of the channel layer can be improved, and the driving circuit of the P-type transistor is improved.

The application discloses a TBC solar cell and a preparation method thereof. The preparation method comprises two boron diffusion steps and two phosphorus diffusion steps, and a first dense tunneling oxide layer, a first non-dense tunneling oxide layer, a second dense tunneling oxide layer and a second non-dense tunneling oxide layer are deposited. While ensuring that the first and second polycrystalline silicon layers have high doping concentrations, the first and second dense tunneling oxide layers effectively prevent the diffusion depth of doping ions in the silicon substrate, thereby improving the collection efficiency of carriers and maintaining good passivation effects. In addition, the first electrode grid is embedded in the first non-dense tunneling oxide layer, and the second electrode grid is embedded in the second non-dense tunneling oxide layer, so that the contact effect is good, the absorption efficiency of the first and second electrode grids for the carriers transported in the transverse direction is enhanced, and compared with the prior art, the process difficulty is low and the error rate is low.

The application relates to a solar cell and a preparation method thereof, a laminated cell and a photovoltaic module. The preparation method of the solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a first surface; performing boron diffusion on the first surface of the substrate to obtain a boron diffusion layer, wherein the boron diffusion comprises: performing first deposition on the first surface of the substrate, wherein the first deposition comprises a first constant-temperature section; performing second deposition on the first surface of the substrate, wherein the second deposition comprises a second temperature-rising section and a second constant-temperature section; and performing third deposition on the first surface of the substrate, wherein the third deposition comprises a third temperature-rising section and a third constant-temperature section; and the gas input in the first deposition, the second deposition and the third deposition all comprises a boron source. The preparation method is simple and easy to implement, and can effectively improve the uniformity of sheet resistance.

The application relates to the field of solar cell manufacturing, and particularly discloses a TOPCon cell and a preparation method thereof. A front surface oxidation layer is obtained by front surface oxidation of a silicon substrate; a back surface oxidation layer and a polysilicon layer are sequentially arranged on the back surface of the silicon substrate; a SE area of the front surface oxidation layer is laser grooved to obtain a diffusion precursor, grooves on the front surface of the diffusion precursor penetrate the front surface oxidation layer; boron diffusion is performed on the front surface of the diffusion precursor to obtain a cell precursor; after back surface phosphorus diffusion, surface passivation and electrode arrangement are performed on the cell precursor, the TOPCon cell is obtained. The TOPCon cell is produced by only one diffusion, so that the process flow is simplified, the service life of a reaction furnace is greatly prolonged, the demand for boron diffusion reagents in the production process is reduced, and the production cost is greatly reduced.

The invention discloses a selectively doped TOPCon solar cell and a preparation method thereof, and belongs to the technical field of photovoltaics. In order to solve the problems of'contact-recombination 'contradiction and difficult process adjustment existing in the uniform doping of the front surface of the existing TOPCon battery, the invention proposes to divide an emitter region on the front surface of the battery into a metal contact region and a non-metal contact region. According to the preparation method, after conventional boron diffusion, high doping of a metal contact area and non-doping of a non-metal contact area are realized through three procedures of laser ablation, selective texturing and thermal oxidation in sequence. According to the structure, the metal contact resistance is effectively reduced, meanwhile, doping induced recombination of carriers in an illumination area is thoroughly eliminated, and the conversion efficiency of the cell is improved by more than 0.2%. In addition, the structure is better in compatibility with low-silver-content paste, the silver paste cost can be greatly reduced, the production process is simplified, and the process stability is improved.

The present application relates to the technical field of semiconductors. Provided are a semiconductor device, an electronic device, and a method for manufacturing a semiconductor device. The semiconductor device comprises a P-type transistor, the P-type transistor comprising a first electrode, a second electrode and a channel, and the first electrode comprising boron. In addition, the semiconductor device further comprises a first film layer and a barrier layer. The first film layer is located on the first electrode, the first film layer comprising boron, and the boron content of the first film layer being greater than the boron content of the first electrode. The barrier layer is stacked between the first electrode and the first film layer, and the barrier layer is used for suppressing diffusion of boron in the first film layer into a substrate, for example, the barrier layer is used for suppressing diffusion of boron in the first film layer into the channel of the P-type transistor. In this way, the hole mobility of channel layers can be improved, thus improving driving circuits comprising P-type transistors.

The utility model relates to a drying device for boron diffusion heating furnace body production, which comprises a base, a vertical plate is arranged on the base, a drying box is fixedly mounted at the top end of the vertical plate, an adjusting mechanism is arranged in the drying box, a clamping mechanism is arranged on the adjusting mechanism, and a heating furnace body is clamped on the clamping mechanism. The adjusting mechanism comprises an adjusting assembly, the adjusting assembly comprises a first motor, and the first motor is fixedly installed at the bottom end of the drying box. Through the arrangement of the adjusting mechanism, the distance between the clamping mechanisms on the two sides is conveniently adjusted according to the size of the boron diffusion heating furnace body, so that the boron diffusion heating furnace body is effectively clamped by the clamping mechanisms, the purpose of clamping the boron diffusion heating furnace bodies with different inner diameters is achieved through the arrangement of the clamping mechanisms, drying of the boron diffusion heating furnace bodies is facilitated, and the drying efficiency of the boron diffusion heating furnace bodies is improved. And meanwhile, the boron diffusion heating furnace body can be driven to rotate, and the drying efficiency of the boron diffusion heating furnace body is improved.

This application belongs to the technical field of cemented carbide materials, specifically a high-toughness WC-Co cemented carbide and its preparation method. The preparation method includes: using tungsten carbide powder, cobalt powder, tantalum carbide powder, boron source, and tungsten powder as raw materials; mixing and ball-milling all the boron source, tungsten powder, and part of the cobalt powder to obtain a first slurry; mixing and ball-milling all the tungsten carbide powder, tantalum carbide powder, and the remaining cobalt powder to obtain a second slurry; mixing the first slurry and the second slurry, ball-milling, drying, and pressing; and then sintering in three stages with increased temperature to obtain the WC-Co cemented carbide. This application, through the synergistic design of "pre-alloying wet milling" and "medium-temperature heat preservation," guides the uncontrollable boron diffusion reaction process into a directional and gradual reaction path of "B→Co2B→WCoB," thereby avoiding the formation of harmful phases such as brittle WB, optimizing the microstructure of the WC-Co cemented carbide, and improving its mechanical properties.

The invention provides a preparation method of a BSG layer, a TBC battery and a preparation method of the TBC battery, and relates to the technical field of solar cells, the preparation method of the BSG layer comprises the following steps: preparing a homogenized BSG layer on an initial BSG layer formed through boron diffusion, and superposing the initial BSG layer and the homogenized BSG layer to form a complete BSG layer; the homogenized BSG layer is prepared through at least two circulating units; the circulation unit comprises the steps of depositing the BSG layer and trimming the BSG layer by adopting repair gas, and the temperatures of the deposition steps are sequentially reduced along the process sequence. Through effective combination of a step-by-step variable-temperature BSG deposition mode and removal of an uneven thin layer before and after each step of deposition, the uniformity of the BSG layer is improved, and finally, the yield and the conversion efficiency are improved.

This application relates to the field of solar cell technology, specifically providing a boron diffusion method, a solar cell, and a photovoltaic module. The boron diffusion method includes: forming a pre-doped layer and an initial doped dielectric layer stacked on a first surface of a substrate; etching the initial doped dielectric layer using an etching process to remove at least a portion of the initial doped dielectric layer; placing the substrate with at least a portion of the initial doped dielectric layer removed into a diffusion furnace, heating it to 900-980°C in an oxygen-free environment for oxygen-free propagation; maintaining the temperature at 900-980°C, introducing oxygen into the diffusion furnace for oxygen-enriched propagation, so that the pre-doped layer forms a first doped layer. The boron diffusion method in this application results in a first doped layer with a low doping concentration and a small doping depth, which is beneficial for reducing recombination losses and improving device quality and lifespan.

Provided are N-type monocrystalline silicon double-sided solar cell and preparation method thereof. Preparation method includes following steps: S1: performing double-sided texturing to obtain N-type monocrystalline silicon with front surface and back surface having first textured structures respectively; S2: performing back-surface phosphorus diffusion doping to form back surface field; S3: removing winding plating and PSG on front surface and back surface, forming mask for protecting first textured structure of back surface on surface of back surface field, and manufacturing second textured structure on front surface of N-type monocrystalline silicon; S4: performing front-surface boron diffusion doping to form front-surface doped emitter junction layer; S5: after removal of mask, winding plating and BSG on front surface and back surface, depositing passivation antireflection layer on surface of front-surface doped emitter junction layer, and depositing passivation layer on surface of back surface field; and S6: preparing front surface electrode and back surface electrode.

The invention discloses a novel TOPCon battery preparation process and device, and relates to the technical field of battery processing, and the novel TOPCon battery preparation process comprises the following steps: S1, preparing a sheet; s2, scribing: segmenting the whole cell by using laser; s3, side face polishing is conducted, specifically, chain type etching and alkali washing are conducted on the cutting face, and the cutting face is corroded at the temperature of 30-60 DEG C through 10-30% of TMAH and 5-20% of IPA aqueous solution; s4, edge passivation is conducted, specifically, an aluminum oxide passivation film of 20-50 nm is deposited in an atomic layer deposition mode, and annealing is conducted for 30-60 min at the temperature of 250-300 DEG C; and S5, IV testing: testing the appearance, IV and EL performance of the battery piece, and then grading. Preferably, the flaking process comprises the steps of texturing and boron diffusion. According to the invention, a battery panel is driven to move in a manner of carrying liquid through a roller, and silicon, silicon nitride and silicon oxide on a cut surface of the battery can be corroded and polished by using a TMAH + IPA solution and an HF solution.

One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. Accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. Alternative embodiments of boron-containing encapsulation layers and methods of making MTJ devices are disclosed.

The invention discloses a screen printing method of a solar cell and a preparation method of the solar cell, and the method comprises the steps: carrying out the marking of a diffusion surface of an N-type silicon wafer after boron diffusion, and obtaining a silicon wafer with a first positioning mark; comparing and positioning the first positioning mark with a first positioning pattern on the first printing screen, and printing an electrode main grid pattern and a second positioning mark on the surface of the silicon wafer; and comparing and positioning the second positioning mark with a second positioning pattern on the second printing screen, and printing an electrode fine grid pattern and a third positioning mark on the surface of the silicon wafer printed with the main grid pattern. According to the invention, the main grid pattern is printed by comparing the positions of the first positioning mark and the first positioning pattern, and the fine grid pattern is printed by comparing the positions of the second positioning mark and the second positioning pattern, so that compared with a mode of directly grabbing the edge of the silicon wafer for positioning, a point-to-point positioning mode is adopted, the positioning precision is higher, and the offset rate of silk-screen printing is more favorably reduced.

This invention discloses a boron diffusion process, comprising the following steps: S1: placing a small boat containing a silicon wafer into a furnace tube; S2: evacuating the furnace tube; S3: leak detection; S4: introducing nitrogen and oxygen for pre-oxidation; S5: introducing nitrogen, oxygen, and a diffusion boron source for diffusion; S6: introducing nitrogen for heating diffusion; S7: introducing nitrogen, oxygen, and a diffusion boron source under constant temperature conditions; S8: introducing nitrogen and oxygen, heating for aerobic propulsion; S9: introducing oxygen, continuing heating for post-oxidation; S10: introducing mixed oxidation with large and small oxygen molecules; S11: introducing nitrogen and large oxygen molecules and cooling; S12: breaking the vacuum to atmospheric pressure; S13: removing the boat. This invention has advantages such as simple principle, low process temperature, and low BRL layer thickness, significantly shortening process time and increasing production capacity.

The invention discloses a method for preparing a P-type boron-doped N-type silicon substrate through a low-temperature ion implantation process, and the method comprises the steps: preparing a substrate which is an N-type silicon wafer substrate bare chip; boron ions with different energies are injected into the substrate through multiple low-temperature ion injection processes to form a boron injection layer; wherein the doping concentration of each depth position in the boron injection layer is the same; after the cleaning step, the boron injection layer is recrystallized by a thermal annealing process. The depth of the P-type doping layer can be accurately controlled, the concentration uniformity is good and can be accurately controlled, the concentration of the P-type doping layer does not have an excessive diffusion phenomenon, and the surface layer and the deep layer of the P-type doping layer do not have defects. Compared with a traditional TOPCon pure boron diffusion process technology, the method has the advantages that a high-quality, high-uniformity and low-defect P-type boron doping layer can be effectively generated in the N-type silicon wafer substrate, the required P-type boron doping depth can be accurately controlled, and meanwhile, the process complexity can be further reduced.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The application discloses a preparation method of a TBC solar cell, which comprises the following steps: dipping a substrate into a specified solution at a predetermined temperature to perform texturing, and controlling the texturing time within a predetermined time; sequentially depositing a tunneling oxide layer and an intrinsic polysilicon layer on the back of the substrate; depositing a mask layer on the side of the intrinsic polysilicon layer away from the tunneling oxide layer; forming a first opening area on the mask layer, and performing boron diffusion on the first opening area to form a boron-doped polysilicon layer; forming a second opening area on the mask layer, and performing phosphorus diffusion on the second opening area to form a phosphorus-doped polysilicon layer; the mask layer remains between the first opening area and the second opening area; and depositing an anti-reflection layer on the back of the substrate. The application can shorten the production process and reduce the risk of laser damage to the cell.

The invention discloses a neodymium iron boron permanent magnet material and a preparation method and application thereof, and belongs to the field of magnets. The preparation method of the neodymium-iron-boron permanent magnet material comprises the following steps: S1, performing primary film coating on a neodymium-iron-boron diffusion substrate by adopting a first diffusion source to obtain a first precursor; s2, performing secondary film coating on the first precursor by adopting a second diffusion source to obtain a second precursor; and S3, performing diffusion treatment and aging treatment on the second precursor to prepare the neodymium iron boron permanent magnet material, wherein in the steps S1 and S2, the first diffusion source and the second diffusion source respectively and independently comprise heavy rare earth elements; the heavy rare earth element comprises Dy and / or Tb and exists in the form of a heavy rare earth simple substance, a heavy rare earth alloy or a heavy rare earth compound. The obtained permanent magnet material can simultaneously realize excellent performances such as high coercive force, high residual magnetism, high squareness and high diffusion depth; and the preparation method can remarkably shorten the production cycle and reduce the cost, and is especially suitable for large-thickness products.