A making method for quick recovery silicon rectifying diode chip

Abstract

The invention discloses a manufacturing method of rapidly recovering a silicon rectifier diode chip, which relates to a silicon rectifier diode, in particular to the manufacturing method of the chips. The method comprises processes as follows: silicon single crystal wafer selection, silicon wafer cleaning, phosphorus diffusion, lapping, boron diffusion, second phosphorus diffusion, phosphorus surface evaporation gold, gold diffusion, boron surface light sand blasting and aluminum evaporation. Three processes of the second phosphorus diffusion, the phosphorus surface evaporation gold and the gold diffusion are added into a technological process to cause the concentration of diffusion impurities in N -type silicon to change and the contact of the N -type silicon and the aluminum to form an almost complete ohmic contact, and the performance of the produced chip is improved. Under large current, when the forward voltage obtains decrease simultaneously, the recovery time of a glass passivation rapid recovering silicon rectifier diode ship which is manufactured by the method can reach below 30ns, and the reliability of the product obtains assurance, which causes the forward voltage to be smaller than o.875V. The produced chip has the advantages of small volume, light weight and high reliability, and temperature shock resistance.

Description

technical field [0001] The invention relates to a semiconductor device suitable for rectification, in particular to a silicon rectifier diode, and especially to a method for manufacturing the chip. Background technique [0002] Silicon rectifier diodes are commonly used electronic devices. The traditional glass passivation fast recovery silicon rectifier diode chip manufacturing method includes the selection of silicon single wafer, silicon wafer cleaning, phosphorus diffusion, grinding, boron diffusion, light sandblasting of boron surface, aluminum steaming and other processes. The recovery time of the silicon rectifier diode chip is above 100ns. Even if the diffusion details are carefully controlled, that is, the diffusion temperature, diffusion time and other related operations are changed to reduce the recovery time to less than 100ns, the forward voltage drop V F Relatively large, it is difficult to improve the performance of chips produced in this way. After searchin...

AI Technical Summary

Problems solved by technology

The traditional glass passivation fast recovery silicon rectifier diode chip manufacturing method includes the selection of silicon single wafer, silicon wafer cleaning, phosphorus diffusion, grinding, boron diffusion, light sandblasting of boron surface, aluminum steaming and other processes. The recovery time of the silicon rectifier diode chip is above 100ns. Even if the diffusion details are carefully controlled, that is, the diffusion temperature, diffusion time and other related operations are changed to reduce the recovery time to less than 100ns, the forward voltage drop V F Relatively large, it is difficult to improve the performance of chips produced in this way

After searching, there is currently only one patent involving silicon rectifier diodes, that is, No. 95108805.X "Semiconductor diodes composed of groove-shaped housing components and their packaging methods", but this patent is not related to glass-passivated fast-recovery silicon rectifier diode chips. The manufacturing method has nothing to do with it, and there is no report on a new method for manufacturing glass-passivated fast-recovery silicon rectifier diode chips.