99 results about "Phosphorus diffusion" patented technology

The invention relates to a preparation process of a TBC battery. The TBC battery comprises a substrate; the substrate is polished and cleaned; the doping treatment process comprises a first doping process and a second doping process, the first doping process is used for carrying out boron diffusion, and the second doping process is used for carrying out phosphorus diffusion; performing a high-temperature annealing process of high-temperature junction pushing on the substrate treated by the doping treatment process; carrying out PSG removal and front surface and side surface alkali polishing processes on the substrate treated by the high-temperature annealing process; and depositing an aluminum oxide layer, a silicon nitride layer and an electrode on the substrate. Boron expansion and phosphorus expansion are respectively carried out on the substrate, and junction pushing is not carried out; boron diffusion and phosphorus diffusion knot pushing processes are carried out in the same high-temperature environment, so that the thermal history is shortened, the energy consumption is reduced, the process flow is simplified, the production cost is reduced, and the production efficiency is improved.

The invention provides a TBC battery, a preparation method thereof and a photovoltaic module, and relates to the technical field of solar cells, and the front surface structure of the TBC battery comprises an N + front surface field layer, a front phosphorosilicate glass layer, a passive film layer and an antireflection film layer which are sequentially stacked on the front surface of a silicon substrate; wherein the N + front surface field layer is a high-concentration N-type region formed by doping phosphorus atoms on the front surface through phosphorus diffusion. An N + front surface field (FSF) is added on the front surface of the cell, phosphorus atoms are doped on the front surface through phosphorus diffusion to form an N + region, an N-N + high-low junction is formed with an N-type silicon substrate, minority carriers are repelled, and the field passivation effect is improved.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The invention discloses a passivation contact cell with a selective Poly structure, a preparation method of the passivation contact cell and a photovoltaic module. The passivation contact cell comprises an N-type silicon wafer substrate, a metal contact area and a non-metal contact area, wherein the metal contact area is sequentially provided with a phosphorus diffusion layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a back surface passivation anti-reflection film from inside to outside; the non-metal contact region comprises a third region with phosphorus diffusion and a fourth region with a recess on the silicon substrate, the third region is sequentially provided with a phosphorus diffusion layer and a back surface passivation anti-reflection film from inside to outside, and the fourth region is provided with a back surface passivation anti-reflection film on the surface of the recess structure. According to the passivation contact battery, the transverse transmission of back current can be improved, the filling factor of the battery is improved, and the Voc of the battery can be prevented from being greatly reduced. And the optical performance of the cell can be remarkably improved, and the long-wave quantum efficiency is improved, so that the current and double-sided rate of the cell are improved.

The invention relates to the technical field of solar cells, in particular to a TOPCon solar cell and a preparation method thereof. The preparation method comprises the steps of front surface texturing, boron diffusion, removal of BSG + alkali polishing, deposition of a back surface insulating layer, local grooving on the insulating layer, deposition of a tunneling oxide layer and a polycrystalline silicon layer in sequence in a local grooving area, phosphorus diffusion, removal of PSG + RCA, deposition of a passivation layer and an anti-reflection film layer, and silk-screen printing. According to the method, the insulating layer is deposited on the back surface of the silicon wafer, local grooving is carried out, the oxide layer / polycrystalline silicon layer and the printing electrode are tunneled in the grooving area, non-contact passivation is reserved, meanwhile, the carrier transmission path is optimized, the recombination loss is reduced, the passivation performance of the battery prepared through the method can be further optimized, and the service life of the battery is prolonged. The conversion efficiency of the battery is improved.

The invention discloses a phosphorus diffusion method for improving photoelectric conversion efficiency of a BC type battery, which realizes high sheet resistance (20-150 omega) with excellent uniformity while obtaining high impurity concentration PSG by improving a phosphorus diffusion process after an N-type BC type battery LP route N-poly, thereby improving FF of the BC type battery, reducing contact resistance Rs and finally improving the photoelectric conversion efficiency of the battery to a greater extent. And secondly, a multi-step source-passing method is adopted, the source-passing time is shortened, the source-passing flow is increased, rapid temperature rise propulsion and the like are adopted, a conventional phosphorus diffusion method is changed, high sheet resistance with excellent uniformity is realized while high-impurity-concentration PSG is obtained, reduction of N-region carrier recombination is ensured, FF and Uoc are improved, and finally the conversion efficiency of the battery is improved to the maximum extent.

The invention provides a TBC battery and a preparation method thereof. The current density is remarkably improved by adjusting printing and laser patterns, reducing the area of a P region or / and an N region, increasing the area of a gap region, reducing the metal shielding area and improving the photon utilization rate; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved. By polishing the gap region with the pyramid suede, the reflection of incident light in the silicon substrate can be increased, so that the Isc of the cell is improved, and meanwhile, as the initial gap region is protected by the mask layer and is not damaged by wet corrosion subsequently, the height difference between the gap region and the boron / phosphorus diffusion layer can be reduced, the transverse transmission of carriers in the silicon substrate is facilitated, and the FF is improved. According to the TBC battery prepared by the method, under the condition that the number of partitions on the back surface of the battery is not changed, the areas of the P region and the N region are reduced, so that the area of the gap region is increased, the metal shielding area is reduced, the photon utilization rate is improved, and the current density is obviously improved; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved.

The present invention relates to the field of solar cells. Disclosed are a lateral-vertical composite multi-junction TBC solar cell and a manufacturing method therefor. The TBC solar cell comprises an N-type silicon wafer. The front surface of the N-type silicon wafer is sequentially provided with a pyramid textured surface and a passivation layer; the back surface of the N-type silicon wafer is provided with a deposition region A and a deposition region B distributed in an interdigitated manner; a gap between the deposition region A and the deposition region B serves as an isolation region, and the surface of the isolation region is sequentially provided with the pyramid textured surface and the passivation layer; the surface of the deposition region A is sequentially provided with a boron diffusion layer A, a phosphorus diffusion layer A, a tunneling oxide layer A, a phosphorus diffusion layer B, the passivation layer and an electrode layer; the surface layer of the N-type silicon wafer located at the bottom of the deposition region B is a boron diffusion layer B, and the surface of the deposition region B is sequentially provided with a tunneling oxide layer B, a boron diffusion layer C, the passivation layer and the electrode layer. The TBC solar cell of the present invention has a lateral-vertical composite multi-junction structure, which is beneficial to further improving the cell conversion efficiency of the cell and also reducing the manufacturing cost and technical difficulty of the cell.

The invention discloses a phosphorus diffusion process in a downstream wafer insertion mode, which comprises the following steps of: vertically inserting a silicon wafer into a quartz boat, loading the quartz boat into a furnace tube of a diffusion furnace, enabling the silicon wafer to be vertical to the radial direction of the furnace tube, oxidizing at 730-760 DEG C, cooling to 700-720 DEG C, feeding air in sections, depositing the silicon wafer, heating to 830-890 DEG C, propelling, cooling, and returning pressure, and finishing the treatment. According to the phosphorus diffusion process, the number of inserted wafers can be increased to 2880 wafers per boat, the productivity can be increased by 70% or above, the heating power can be controlled and output at a constant speed and slowly by adopting a mode of'heating oxidation + cooling diffusion + heating propulsion ', the difference between the edge temperature and the center temperature of the silicon wafer can be reduced, and the yield of the silicon wafer can be improved. Therefore, the diffusion uniformity can be improved under the condition of lower energy consumption, and the method has the advantages of high productivity, good diffusion uniformity and the like, can be widely used for preparing high-rate solar cells, and is high in use value and good in application prospect.

The application discloses a TBC solar cell and a preparation method thereof. The preparation method comprises two boron diffusion steps and two phosphorus diffusion steps, and a first dense tunneling oxide layer, a first non-dense tunneling oxide layer, a second dense tunneling oxide layer and a second non-dense tunneling oxide layer are deposited. While ensuring that the first and second polycrystalline silicon layers have high doping concentrations, the first and second dense tunneling oxide layers effectively prevent the diffusion depth of doping ions in the silicon substrate, thereby improving the collection efficiency of carriers and maintaining good passivation effects. In addition, the first electrode grid is embedded in the first non-dense tunneling oxide layer, and the second electrode grid is embedded in the second non-dense tunneling oxide layer, so that the contact effect is good, the absorption efficiency of the first and second electrode grids for the carriers transported in the transverse direction is enhanced, and compared with the prior art, the process difficulty is low and the error rate is low.

The application relates to the field of solar cell manufacturing, and particularly discloses a TOPCon cell and a preparation method thereof. A front surface oxidation layer is obtained by front surface oxidation of a silicon substrate; a back surface oxidation layer and a polysilicon layer are sequentially arranged on the back surface of the silicon substrate; a SE area of the front surface oxidation layer is laser grooved to obtain a diffusion precursor, grooves on the front surface of the diffusion precursor penetrate the front surface oxidation layer; boron diffusion is performed on the front surface of the diffusion precursor to obtain a cell precursor; after back surface phosphorus diffusion, surface passivation and electrode arrangement are performed on the cell precursor, the TOPCon cell is obtained. The TOPCon cell is produced by only one diffusion, so that the process flow is simplified, the service life of a reaction furnace is greatly prolonged, the demand for boron diffusion reagents in the production process is reduced, and the production cost is greatly reduced.

The invention discloses a photovoltaic silicon wafer back diffusion process and a TOPCon battery. The photovoltaic silicon wafer back diffusion process provided by the invention comprises the following steps: carrying out phosphorus diffusion treatment on the back of a silicon wafer after alkali polishing, and oxidizing a dead layer on the back to form a phosphorosilicate glass layer; carrying out annealing treatment on the silicon wafer with the phosphorosilicate glass layer so as to promote the diffusion of phosphorus elements on the back surface of the silicon wafer; and removing the residual phosphorosilicate glass layer on the back surface of the silicon wafer by adopting etching treatment. By adopting the method, the contact resistivity of the silicon wafer can be reduced, the filling factor FF can be improved, and the efficiency of a TOPCon battery manufactured by adopting the silicon wafer can be further improved.

The application discloses a Topcon battery and a preparation method thereof, a solar module and a solar system, and relates to the technical field of solar cells. The preparation method of the Topcon battery comprises the following steps: step 1, providing a substrate, and performing a texturing treatment on the surface of the substrate; step 2, obtaining a P+ layer through boron doping and BSG removal; step 3, obtaining a tunneling oxide layer and a doped polysilicon layer by adopting LPCVD and high-temperature phosphorus diffusion; step 4, obtaining an aluminum oxide layer on the front surface of the substrate by adopting ALD; step 5, obtaining a front surface silicon nitride layer on the front surface of the substrate by adopting PECVD; step 6, obtaining a back surface silicon nitride layer on the back surface of the substrate by adopting PECVD, and modifying the doped polysilicon layer, so that a polysilicon layer doped with carbon elements is formed on the surface of the doped polysilicon layer. The application does not need to increase additional equipment, is compatible with the existing LPCVD equipment for preparing the Topcon battery containing the polysilicon layer doped with carbon elements, is simple to operate, low in cost and suitable for large-scale popularization.

Provided are N-type monocrystalline silicon double-sided solar cell and preparation method thereof. Preparation method includes following steps: S1: performing double-sided texturing to obtain N-type monocrystalline silicon with front surface and back surface having first textured structures respectively; S2: performing back-surface phosphorus diffusion doping to form back surface field; S3: removing winding plating and PSG on front surface and back surface, forming mask for protecting first textured structure of back surface on surface of back surface field, and manufacturing second textured structure on front surface of N-type monocrystalline silicon; S4: performing front-surface boron diffusion doping to form front-surface doped emitter junction layer; S5: after removal of mask, winding plating and BSG on front surface and back surface, depositing passivation antireflection layer on surface of front-surface doped emitter junction layer, and depositing passivation layer on surface of back surface field; and S6: preparing front surface electrode and back surface electrode.

The invention discloses a preparation method of a BC solar cell, and relates to the technical field of BC cell preparation, and the method specifically comprises the steps: selecting an N-type silicon wafer, and carrying out the alkali polishing treatment; depositing a tunneling oxide layer and a first intrinsic silicon layer on a single side; performing phosphorus expansion treatment to form N-type polycrystalline silicon; depositing a silicon nitride passivation layer on the back surface; a pyramid structure is formed on the front side through alkali texturing; sequentially depositing aluminum oxide and a silicon nitride passivation layer on the front surface; carrying out annealing treatment; performing laser grooving to remove the silicon nitride, the polycrystalline silicon and the tunneling layer; depositing second intrinsic silicon and P-type silicon on the back surface; performing secondary laser grooving to form a PN junction; depositing a TCO thin film on the back surface; printing an electrode to obtain a finished battery. The silicon nitride is used as the passivation layer and the laser mask, traditional photoresist is replaced, the process is simplified, the cost is reduced, the passivation effect and open-circuit voltage are improved through aluminum oxide and silicon nitride laminated passivation, the current transmission efficiency is improved through the TCO thin film, the efficiency of the cell prepared through the method is higher than that of a traditional cell, and the method has good application prospects.

The invention discloses a TOPCon battery capable of improving minority carrier lifetime and a preparation method thereof, and belongs to the field of TOPCon batteries, and the preparation method comprises the following steps: sequentially carrying out pre-cleaning, two times of phosphorus diffusion, surface PSG removal, texturing treatment, boron diffusion and other post-treatments on a silicon wafer to prepare the TOPCon battery. The method has the beneficial effects that deposition gettering is carried out on the silicon wafer through two times of phosphorus diffusion and gradient temperature rise propulsion, and the method has a better gettering effect for the silicon wafer with seriously low minority carrier lifetime. In addition, the concentration of chemicals in the texturing cleaning and rough polishing tank is reduced, the silicon wafer can be prevented from being seriously thinned due to secondary rough polishing, the concentration of the chemical liquid in the texturing tank is adjusted, the concentration of the additive is increased, the texturing rate is controlled, and the damage to the silicon wafer is reduced to the minimum.

The application discloses a preparation method of a TBC solar cell, which comprises the following steps: dipping a substrate into a specified solution at a predetermined temperature to perform texturing, and controlling the texturing time within a predetermined time; sequentially depositing a tunneling oxide layer and an intrinsic polysilicon layer on the back of the substrate; depositing a mask layer on the side of the intrinsic polysilicon layer away from the tunneling oxide layer; forming a first opening area on the mask layer, and performing boron diffusion on the first opening area to form a boron-doped polysilicon layer; forming a second opening area on the mask layer, and performing phosphorus diffusion on the second opening area to form a phosphorus-doped polysilicon layer; the mask layer remains between the first opening area and the second opening area; and depositing an anti-reflection layer on the back of the substrate. The application can shorten the production process and reduce the risk of laser damage to the cell.

A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and / or antireflective coating layer covering the n-doped layer on the substrate's first surface.

A solar cell and its fabrication method are disclosed. The fabrication method includes the following steps: depositing a tunneling layer and an amorphous silicon layer on the back side of a P-type silicon substrate, wherein the back side of the silicon substrate has a first region and a second region; fabricating a barrier layer of a first thickness in the electrode region of the first region and a barrier layer of a second thickness in the non-electrode region of the first region; diffusion doping the amorphous silicon layer using an N-type doping source to form an N-type doped crystalline silicon layer and an oxide layer; removing the oxide layer and the N-type doped crystalline silicon layer in the second region; fabricating a first electrode in the electrode region of the first region and a second electrode in the electrode region of the second region. The fabrication method of this invention forms barrier layers of different thicknesses in the first region, which have different blocking effects on phosphorus diffusion. During phosphorus diffusion, a selective emitter is formed in the first region, improving cell efficiency. Furthermore, the barrier layers are corrosion-resistant to alkaline solutions, protecting the N-poly layer in the first region during subsequent processes while completely removing the N-poly layer in the second region, thus improving cell yield.

The present invention discloses a method for preparing a TOPCon solar cell with a double-layer passivated contact structure, belonging to the field of TOPCon cells. A first tunneling oxide layer and a blocking polysilicon layer are first deposited on the back side of a treated silicon substrate; a second tunneling oxide layer and a doped polysilicon layer are then deposited on the deposited blocking polysilicon layer; the oxygen flow rate is then increased to form a silicon dioxide film mask on the back side; and then back-side phosphorus diffusion is performed. The present invention has the beneficial effects of significantly increasing the propulsion temperature for phosphorus diffusion, improving crystallization capability, and avoiding the increased internal diffusion caused by high-temperature phosphorus diffusion, while maintaining a good tunneling effect and the contact passivation capability of the polysilicon layer and the tunneling layer, ultimately significantly improving the efficiency of the TOPCon cell.

The invention provides a local junction cell structure and a preparation process thereof. The preparation process comprises the following steps: S1, texturing; s2, boron diffusion; s3, alkali polishing; s4, back surface growth; s5, phosphorus diffusion; s6, opening the film; s7, structuring is carried out; and S8, post-processing to form the photovoltaic cell with the local junction structure. According to the local junction cell structure, the limitation of transmission resistance in the prior art can be broken, the open-circuit voltage is improved, the transmission resistance is reduced, and the efficiency is improved.

The application relates to the field of topcon cells, in particular to a novel structure topcon cell and a preparation method thereof, which comprises the following steps: (1) front texturing: performing texturing on the front surface of an n-type silicon substrate, and then performing boron diffusion to obtain an n-type silicon substrate containing a boron diffusion layer; (2) front passivation and anti-reflection: depositing a passivation layer on the front surface of the n-type silicon substrate containing the boron diffusion layer, and then depositing an anti-reflection layer on the passivation layer; (3) back through-passivation layer: depositing an ultrathin through-oxidation layer on the back surface of the n-type silicon substrate, then growing a polysilicon layer on the ultrathin through-oxidation layer, and performing phosphorus diffusion to form a phosphorus-doped polysilicon layer; and (4) printing electrodes. In the application, a plurality of groups of aluminum grid lines are used to replace a traditional full-aluminum back field on the back electrode, interval silver electrodes are adopted, and interconnection materials are used for connection, so that the prepared cell has little difference in performance from a traditional topcon cell, the consumption of aluminum and silver is reduced, and the production cost is reduced.

The invention discloses a preparation method of a TBC solar cell. The preparation method comprises the following steps: alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer; carrying out boron diffusion conversion to obtain P-type polycrystalline silicon; laser patterning is prepared for N region deposition; acid pickling and alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer again; carrying out phosphorus diffusion conversion to obtain N-type polycrystalline silicon; removing PSG from the front side; patterning to expose the N-type polycrystalline silicon region; performing alkali texturing treatment to form a pyramid structure, and performing rounding treatment; pickling the back surface and reserving the polycrystalline silicon layer; depositing an aluminum oxide passivation layer and a silicon nitride passivation layer on two sides; laser trepanning is carried out to expose the P-type polycrystalline silicon region and the N-type polycrystalline silicon region; metallizing to form a precise electrode; and performing light injection to obtain the TBC solar cell. According to the TBC solar cell provided by the invention, BSGamp; the PSG is used as a mask, and the laser patterning / corrosion slurry is used for replacing photoetching and other mask materials, so that the compatibility with the existing TOPCON production line is high.

The invention provides a preparation method of a back contact cell capable of eliminating the height difference of a P / N region. The preparation method comprises the following steps: providing a silicon substrate; carrying out alkali polishing treatment on the silicon substrate, and carrying out phosphorus diffusion on the front surface and the back surface to form a phosphorus diffusion layer; defining two adjacent regions on the back surface as a first region and a second region, removing the phosphorus diffusion layer in the first region, and etching the silicon substrate downwards to form a first groove; sequentially depositing a tunneling oxide layer and an amorphous silicon layer on the whole back surface of the silicon substrate, and performing boron diffusion to form a first doped polycrystalline silicon layer; the first doped polycrystalline silicon layer in the second area is removed, the silicon substrate is etched downwards, a second groove is formed, and the bottom of the second groove is flush with the bottom of the first groove; forming a second doped polycrystalline silicon layer on the back surface of the silicon substrate; and removing the second doped polycrystalline silicon layer in the first region, and synchronously removing the second doped polycrystalline silicon layer at the junction of the second region and the first region to form a groove for isolating the first doped polycrystalline silicon layer from the second doped polycrystalline silicon layer.

The present disclosure provides a solar cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of photovoltaics. By setting the P region as a three-dimensional structure with a groove-shaped curved surface, the effective surface area of the P region is increased (rather than simply the geometric projected area) without changing the geometric area of the N region and affecting the depth requirement of the N-type doped phosphorus diffusion layer, thereby significantly improving the emitter current collection efficiency of the solar cell. In addition, the groove-shaped curved surface structure not only increases the effective collection area, but also optimizes the carrier transport path, reduces the lateral transport resistance, and the curved surface structure helps to improve the passivation layer coverage quality, thereby synergistically improving the open-circuit voltage (Voc) and the fill factor (FF), and ultimately improving the photoelectric conversion efficiency of the cell.

The invention relates to the technical field of photovoltaics, in particular to a phosphorus diffusion method and a phosphorus diffusion furnace, and aims to reduce the amount of solids left in a filter in a phosphorus diffusion process and prolong the service life of a filter element of the filter. The phosphorus diffusion method comprises the steps that after a furnace door of a furnace body is opened, tail gas in the furnace body is extracted, so that air enters the furnace body, the air and the tail gas sequentially flow through a cooler and a filter, and the cooler comprises a container and cooling liquid arranged in the container; and when extraction of the tail gas in the furnace body reaches a first preset duration, extraction of the tail gas in the furnace body is stopped. After a furnace door of a furnace body is opened, tail gas in the phosphorus diffusion furnace is extracted, air enters the furnace body, oxygen and water in the air can react with the tail gas in the furnace body to generate water-soluble substances such as phosphoric acid, more substances in the tail gas are left in a cooler, and then the substances entering a filter can be reduced; the amount of solid left in the filter is reduced, and the service life of a filter element of the filter is prolonged.

The invention discloses a passivation contact structure of a boron and phosphorus doped Poly layer and a battery thereof. According to the passivation contact structure, a tunneling oxide layer with two thin and compact sides and a thick and loose middle grows on the surface of a silicon wafer in a mode of combining low-temperature and low-pressure oxidation, high-temperature and normal-pressure oxidation and low-temperature and normal-pressure oxidation. According to the invention, through superposition of the oxide layers with different compactness, the overall thickness of the tunneling oxide layer is improved, so that the structure of the tunneling oxide layer is not obviously damaged in the subsequent boron and phosphorus diffusion process, and the passivation effect of the boron and phosphorus doped Poly layer is obviously improved. According to the method, the Poly silicon layers and the doped polycrystalline silicon layers with different thicknesses can be obtained, and the method can be applied to all batteries needing to use boron Poly and phosphorus Poly.

The invention relates to a perovskite crystalline silicon laminated cell, a bottom cell and a preparation method, and the method comprises the steps: obtaining a textured semiconductor substrate layer, and carrying out the boron diffusion of a first surface of the semiconductor substrate layer, and generating a boron-doped layer; carrying out winding plating removal and polishing on the second surface of the semiconductor substrate layer, carrying out secondary texturing to form a textured surface, carrying out deposition in sequence to generate a tunneling oxide layer and an intrinsic polycrystalline silicon layer, and carrying out phosphorus diffusion on the intrinsic polycrystalline silicon layer to obtain an N-type polycrystalline silicon layer; depositing a passivation film layer on the boron-doped layer, carrying out passivation treatment, printing silver paste on the passivation film layer, and carrying out sintering to generate a metal electrode; the transparent conductive layer is generated on the N-type polycrystalline silicon layer, and annealing is carried out after auxiliary sintering is carried out by adopting an LECO technology, so that the open voltage of the bottom cell can be improved, and the conversion efficiency of the cell is improved.

The invention relates to a TOPCon battery preparation method for improving UVID and a TOPCon battery, and the method comprises the steps: depositing a first tunneling oxide layer and a barrier polycrystalline silicon layer on the back surface of a processed silicon substrate, and depositing a second tunneling oxide layer and a doped polycrystalline silicon layer on the deposited barrier polycrystalline silicon layer again; forming a silicon dioxide masking film on the back surface of the silicon substrate, and performing back surface phosphorus diffusion; carrying out atomic layer deposition on the front surface of the silicon substrate to form an aluminum oxide layer and carrying out passivation treatment; pECVD deposition is carried out on the front surface and the back surface of the silicon substrate to form a thin film, and passivation treatment is carried out; a main grid and an auxiliary grid line are respectively screen-printed on the front surface and the back surface of the silicon substrate. The thin film on the front side comprises seven layers of structures which are sequentially stacked, the refractive index of the silicon nitride layer is optimized, generation of Si-H covalent bonds is adjusted, and the light absorption capacity is reduced, so that the UVID is greatly improved, and the UVID amplitude of the TOPCon battery is reduced.