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2results about How to "High activation rate" patented technology

Methods, systems, devices, and media for improving the activation rate of intelligent driving functions

PendingCN122126300AHigh activation ratefast iterationElectric/fluid circuitPersonalizationControl engineering
This application discloses a method, system, device, and medium for improving the activation rate of intelligent driving functions. The method includes: receiving user behavior data and vehicle status data sent by the vehicle; constructing a user profile based on the user behavior data and vehicle status data, and identifying key negative scenarios affecting the activation rate; generating an intelligent driving function activation guidance strategy based on the user profile and the key negative scenarios; and pushing the intelligent driving function activation guidance strategy to the vehicle, so that the vehicle activates the intelligent driving function according to the strategy. This application achieves precise personalization and rapid iteration of the guidance strategy, thereby systematically and efficiently improving the user activation rate of intelligent driving functions.
Owner:ANHUI DEEPWAY TECHNOLOGY CO LTD

avalanche photodiode multiplication region n-type digital alloy material and its preparation method

ActiveCN121586324BHigh activation rateReduce interface state densityPhotodiodeMaterials science
This invention provides an n-type digital alloy material for the multiplication region of an avalanche photodiode and its preparation method. The digital alloy material comprises: a superlattice structure matching the crystal lattice of an InP substrate; the superlattice structure is formed by repeated stacking of single periodic units; each periodic unit comprises a layer, a first GaAsSb layer, an n-type Si-doped GaAsSb layer, and a second GaAsSb layer stacked sequentially; wherein the value of x ranges from 0.75 to 0.85; the thickness ratio between the layer, the first GaAsSb layer, the n-type Si-doped GaAsSb layer, and the second GaAsSb layer in a single periodic unit is 22:1:10:1. The digital alloy material and its preparation method provided by this invention can solve the problems of low n-type carrier concentration and narrow application range of n-type alloy materials in the multiplication region of avalanche photodiodes.
Owner:SUZHOU KUNYUAN OPTOELECTRONICS CO LTD