167 results about "High activation" patented technology

A scan-based BIST architecture for detecting path-delay faults in a sequential circuit converted to a combinational circuit or a less complex sequential circuit including a combinational portion and a plurality of scan flip-flops. The BIST structure includes a test pattern generator for generating two test patterns and a controller for generating a clock signal and an extended scan mode signal which is held high for two clock cycles while the output response of the combinational portion to the first and second test vectors is latched into the scan flip-flops in order to detect a signal transition. The invention is further directed to a method for detection of path-delay faults using this scan-based BIST architecture. To improve the fault coverage for path-delay faults, observation points may be inserted at the inputs of selected scan flip-flops. A predetermined number of scan flip-flops having the highest activation frequency are selected as the observation points.

The invention provides a method for preparing a hydrogenation catalyst with high activation. A disposition method is adopted to carry out step-by-step loading to the active components of the metals of VIB and VIII families; the VIB metal comprises tungsten or molybdenum, while the VIII metal comprises nickel or cobalt; a carrier is alumina. The loading of VIB metal takes a corresponding soluble salt as raw material, an acid solution as a precipitator and a cationic surface active agent as a dispersant. In a hydrothermal condition, the corresponding soluble salt, the acid solution and the cationic surface active agent produce metallic oxide particles by a liquid deposition reaction; the loading of VIII metal also takes a corresponding soluble salt as raw material and carbamide as a precipitator; the adding of the precipitator and the generation of precipitation are separated by controlling reaction temperature in sections and even precipitation is realized to disperse the particles of the active components on the carrier evenly. The hydrogenation catalyst prepared shows good effects in the respects of desulfurization and denitrification activation and can greatly reduce the usage of the active components.

A method and a device for motion estimated and compensated Field Rate Up-conversion (FRU) for video applications is disclosed and claimed. The invention provides for dividing an image field to be interpolated into a plurality of image blocks, where each image block includes a respective set of image elements of the image field. In one embodiment, for each image block of a subset of image blocks, a group of neighboring image blocks is selected. A motion vector for the image block is estimated that describes the movement of the image block from a previous image field to a current image field on the basis of predictor motion vectors associated to the group of neighboring image blocks. Each image element of the image block is determined by interpolation of two corresponding image elements in the previous and current image fields related by the estimated motion vector. To estimate a motion vector, the invention provides for applying each of the predictor motion vectors to the image block to determine a respective pair of corresponding image blocks in the previous and current image fields. For each of the pairs of corresponding image blocks, an error function which is the Sum of luminance Absolute Difference (SAD) between corresponding image elements in the pair of corresponding image blocks is evaluated. For each pair of the predictor motion vectors, a degree of homogeneity is also evaluated, followed by the application of a fuzzy rule having an activation level that is proportional to the degree of homogeneity of the pair of predictor motion vectors and the error functions of the pair of predictor motion vectors. An optimum fuzzy rule having the highest activation level is selected, from which the best predictor motion vector is determined, having the smaller error function of the pair associated to the optimum fuzzy rule. In most cases, the motion vector for the image block is estimated on the basis of the best predictor motion vector.

A method for stably activating pn-successive layers in a semiconductor element in a short time is disclosed. Pulsed beams, each of which has a pulse shape that is approximately rectangular, are projected from respective laser irradiation devices and successively combined into a pulsed beam equivalent to one pulse, with which the doped layer region is irradiated. By successively projecting the pulsed beams onto the doped layer region in this way, an effect is obtained which is the same as that of irradiating the doped layer region with a single pulsed beam having a long full-width at half maximum. A high activation ratio from a shallow region to a deep region of the doped layer region is enabled. This can stably activate the semiconductor element having the pn-successive layers as the doped layer region in a short time, making possible the manufacture of semiconductor elements having superior device characteristics.

The invention provides a plastic composition and a plastic surface metallizing method. The plastic composition contains plastic matrix resin and metal chelate; the metal chelate is a complex of metal ions and organic chelating agent; and the organic chelating agent is at least one of diketone, aminocarboxylic acid, thiocarboxylic acid, polycarboxylic acid and nitrogen-containing heterocyclic compound with a general formula CnH8N2, wherein n is 10, 12 or 14. The plastic surface metallizing method comprises the following steps of: performing injection molding on the plastic composition provided by the invention to form a plastic piece, then performing laser etching on the plastic piece by adopting laser with wavelength of 1,064 nanometers to 1,000 microns, and chemically plating a laser etching area to form a metal plating layer. The organic chelating agent adopted in the plastic composition has low cost and is sensitive to the laser, so the plastic surface has high activation degree; and when the plastic surface is metallized, the infrared laser with lower cost is adopted so that the metal ions of the metal chelate in the plastic piece are decomposed as an active center of subsequent chemical plating and the precision is very high.

The invention provides a polyacrylamide and a preparation method thereof. The preparation method comprises the following steps: A) under the condition that a redox initiator system and an azo initiator exist, conducting reaction on acrylamide, carboxy group contained monomers and sulfonic group contained monomers to obtain polyacrylamide. Compared with the prior art, the preparation method has the advantages that carboxy and sulfonic group contained hydrophilic groups are introduced into polyacrylamide, so that the dissolving property of polymer is enhanced; meanwhile, a compound initiator system is adopted, polymerization reaction can be finished in a high-low temperature section initiating manner, the combination of the redox initiator system with relatively low activation energy and the azo initiator with relatively high activation energy is utilized, and free radicals are released at different reaction temperatures and different stages respectively, so that the free radicals can keep certain concentration, the polymerization reaction speed is slow, the control is easy, uniform and smooth chain growth is facilitated, the initiating efficiency is fully improved, and the high-molecular polymer with a relatively high dissolving property is obtained.

A semiconductor component of the invention comprises a semiconductor substrate; a grid stack which is arranged on the semiconductor substrate; a n-type light doped source/drain area which is arranged in the semiconductor and is stacked adjacent the grid, wherein the n-type light doped source/drain area comprises the n-type impurity; a n-type heavy doped source/drain area, wherein the n-type heavy doped source/drain area comprises the n-type impurity; a pre-amorphized implanting area which is arranged in the semiconductor substrate, wherein the pre-amorphized implanting area comprises a back implanting area; and a clearance blocking area, wherein the depth of the clearance blocking area is larger than the depth of the n-type light doped source/drain area but is less than the depth of the back implanting area. As the clearance blocking area of the invention is arranged between the back implanting area and the light doped source/drain area the problem of phosphorus diffusion in the light doped source/drain area can be reduced. Besides as the phosphorus has high activation rate the MOS element has low chip resistor.

A shallow p-n junction diffusion layer having a high activation rate of implanted ions, low resistivity, and a controlled leakage current is formed through annealing. Annealing after impurities have been doped is carried out through light irradiation. Those impurities are activated by annealing at least twice through light irradiation after doping impurities to a semiconductor substrate 11. The light radiations are characterized by usage of a W halogen lamp RTA or a flash lamp FLA except for the final light irradiation using a flash lamp FLA. Impurity diffusion maybe controlled to a minimum, and crystal defects, which have developed in an impurity doping process, may be sufficiently reduced when forming ion implanted layers in a source and a drain extension region of the MOSFET or ion implanted layers in a source and a drain region.

This multilayer component (11) for encapsulating an element (12) which is sensitive to air and/or moisture comprises an organic polymer layer (1) and at least one barrier stack (2). The barrier stack (2) comprises at least one sequence of layers consisting of a retention layer (22) sandwiched between two high-activation-energy layers (21, 23), in which:

• • for each of the two high-activation-energy layers (21, 23), the difference in activation energy for water vapor permeation between, on the one hand, a reference substrate coated with the high-activation-energy layer and, on the other hand, this same reference substrate when bare is greater than or equal to 20 kJ/mol; and
  • the ratio of the effective water vapor diffusivity in the retention layer (22) on a reference substrate to the water vapor diffusivity in this same reference substrate when bare is strictly less than 0.1.

The related ultrafine modification method for CaCO3 with dry mechanical force and chemical way comprises: dewatering the fine CaCO3 powder in drying tank at 100-110DEG C; mixing the CaCO3 and stearic acid as modifier with mass as 0.5-5.0% of the CaCO3 evenly; loading the mixed material into the jet mill to obtain the target with high activation rate and light CaCO3-2mu m more than 95%. Wherein, the crystal phase structure of the calcite as main mineral phase produces distortion. This invention supplies a gap both at home and abroad.

The invention relates to the technical field of semiconductor device performance improvement. A surface pretreatment method for reducing the interface state density of SiC MOS comprises the following steps: (1) using a known RCA method to clean and dry the surface of SiC; (2) using a hydrogen-nitrogen hybrid plasma to treat the surface of SiC before oxidation; (3) growing an SiO2 film through thermal oxidation; and (4) thermally evaporating an Al electrode. According to the invention, a low-energy and high-activity low-temperature hydrogen-nitrogen hybrid plasma produced by an ECR microwave plasma system is adopted to pre-treat the surface of SiC before oxidation. A low-temperature process is realized, and damage to the surface of SiC by a conventional plasma is avoided. Moreover, hydrogen and nitrogen passivation effects are combined, impurity ions and residual carbon on the surface of SiC are removed effectively, hydrogen and nitrogen on the surface inhibit the generation of defects in the oxidation process, and the interface state density of SiC MOS is reduced significantly. In addition, the system is equipped with an RHEED in-situ monitoring system, and is especially suitable for SiC surface passivation process monitoring and mechanism research.

The invention relates to a method utilizing the primary aluminum lime to produce the fluoride-bearing Beta alumina used on the aluminum electrolytic bath. The invention is characterized in that the process is to add the primary aluminum lime into the water with a weight of 1 to 3 times of the aluminum lime for immersion cleaning, filtering and dehydration; vapor the solution after the filtering and dehydration to obtain the mixture crystallization of the NaCl, the KCl and the NaF; add the dehydrated aluminum lime into the dilute hydrochloric acid solution for sufficient mixing; stir the solution for 3 to 5 hours at a temperature of 80 to 100 DEG C to generate the NH3 and the Al(OH)3; calcine the Al(OH)3 generated after the hydrolysis to prepare the fluoride-bearing Beta alumina. The invention has the advantages that the produced fluoride-bearing alumina has higher activation and can dissolve in the electrolyte very well and be used for electrolysis production; not only the environment pollution generated by the aluminum lime during the preparation of the primary aluminum can be solved, but also the industrial waste can be transformed to the resource for full utilization.

The invention discloses a reactivation method of a biotin-intermediate hydrogenation palladium-carbon catalyst. The current biotin-intermediate hydrogenation palladium-carbon catalysts have the defects of deep poisoning and difficult treatment of poisoning impurities. The reactivation method comprises the following steps: firstly, washing an inactivated palladium-carbon catalyst with an alcohol, ketone or ester solvent, filtering, washing with pure water, performing oxidation treatment on the palladium-carbon catalyst with hydrogen peroxide, washing the palladium-carbon catalyst with alkaline water after oxidation treatment, then washing with pure water to neutral, filtering, adding a reducer for performing reduction after filtering, washing the palladium-carbon catalyst with pure water to neutral, filtering and drying to obtain the reactivated palladium-carbon catalyst. The reactivation method effectively activates deeply poisoned palladium-carbon catalysts, has high activation efficiency, restores the activity of the poisoned catalysts like a raw catalyst, can effectively solve the problem of catalyst poisoning when applied in production, realizes continuous application and reduces the production cost.

The invention discloses a method for preparing active carbon with a high specific surface area from a walnut shell, and belongs to the field of comprehensive utilization of resources. The method comprises the following steps of: crushing the walnut shell, then uniformly mixing with KOH, and then placing into a microwave high-temperature reaction furnace; introducing nitrogen into the microwave high-temperature reaction furnace to exhaust furnace air, heating for certain time under the condition of microwaves, then quickly blowing CO2 for certain time through a guide pipe communicated with the bottom of a ceramic crucible, and starting an ultrasonic generator at the same time; after the heating is finished, transferring a material to obtain an activated material, quickly transferring the activated material into a container filled with tap water, firstly washing, and then recovering residual KOH activating agents; rinsing by adopting hot tap water, and then drying to obtain the active carbon with a high specific surface area. The method disclosed by the invention can be used for reducing the production cost and changing the wastes into valuables; active carbon produced through the method has the advantages of high specific surface area, high activation yield and high microporosity and can be used for the fields of high-property fuel cells, double-electrode layer super-capacitors and the like.

The invention relates to a preparation method of a natural attapulgite clay loading cupric oxide nanometer catalyst, which is applied for catalyzing CO for low-temperature oxidation. A deposition-settlement method is adopted to prepare the nanometer catalyst with high ratio surface area by loading the cupric oxide nanometer particles on the natural attapulgite clay carrier. In the preparation process, the loading quantity of the cupric oxide is easily controlled, the operation is simple and the raw material is easy to gain. The prepared catalyst has high activation performance of catalyzing the CO low-temperature oxidation and has greater industrial application significance.

The chemically reactive elements of the second series include Li, Be, B, C, N, O, and F. These second series elements have distinct chemistry for forming and catalyzing strong multiple bonds in competition with single bonds for challenging chemical syntheses at high rates, yields and selectivity. Their chemical reactions (associated with selective syntheses of various products of second series elements) involve high activation energies for bond breakage, bond rearrangement and bond formation steps. These activation energies are associated with energetic and momenta constraints on associated electronic orbital rehybridization and spin dynamics with nontrivial nonclassic consequences. Nonclassic discrete energies and momenta of intermediate states result in kinetic constraints due to conservation of energy and momenta during the bond rearrangement to desired products. This invention provides magnetic, laser, pressure, neutron and catalytic technology for accommodating these specific energetic and momenta requirements for the acceleration of electronic dynamics for specific chemical bond rearrangements and conversions.

The invention discloses a gas detection method and a special sensor array thereof. The gas sensor array comprises a plasma generator and a sensor array chip, wherein one end of the plasma generator is connected with a three-way pipe; the other two ways of the three-way pipe are used as a sample gas inlet and a carrier gas inlet respectively; the other end of the plasma generator is used for introducing gas to the surface of the sensor array chip through a gas pipeline; the sensor array chip is composed of a temperature controllable inert chip, and an array composed of a plurality of sensing units and arranged on the surface of the inert chip; and different nano catalytic materials are loaded on each sensing unit. The gas sensor array combines high-activation performances of low-temperature plasmas, and the reaction activities of the catalytic materials and reactants are improved; the device is simple, the catalytic temperature is low, the energy consumption is low and the heat background is low; and the gas sensor array can be used for detecting environmental gas-state pollutants and respiratory air leaving away from a human body, and a simple and rapid novel method is provided for rapid diagnosis and early detection of diseases including cancers and the like.

The invention discloses a method for preparing active carbon with high specific surface area by utilizing activated abandoned bakelite, and belongs to the field of recycling utilization of resources. The method comprises the following steps: crushing KOH and abandoned bakelite; uniformly mixing and putting into a microwave high-temperature reaction furnace; introducing nitrogen into the furnace and emptying air in the furnace; heating for a certain time by means of microwave; quickly blowing into water vapor from the bottom; opening an ultrasonic generator at the same time and heating to obtain an activated material; washing; recovering a residual KOH activating agent; performing acid washing by using hydrochloric acid and rinsing by using water; drying to obtain the active carbon with high specific surface area. According to the method, the production cost of the active carbon is reduced, the environmental pollution is reduced, and the wastes are turned into the treasures, so that comprehensive utilization of natural sources is realized; the method has good environment, energy source and social benefits; the active carbon with high specific surface area, high activation rate and high microporosity can be used as a precious metal catalyst and a catalyst carrier (palladium, ruthenium, rhodium and platinum) and is used for recycling the precious heavy metals.

The present invention relates to a method for removing an oxygen-containing compound in a hydrocarbon stream, wherein problems of low absorption agent absorption capacity and high activation temperature in the existing absorption purification technology are mainly solved with the present invention. The technical scheme comprises that a porous metal organic compound is adopted as a solid absorption agent to remove oxygen-containing compound impurities from a hydrocarbon stream. With the technical scheme, the problems in the prior art are well solved, and the technical scheme can be used for purification treatments of various hydrocarbon streams in industrial production.

The invention discloses an activation method of a proton exchange membrane fuel cell stack. The activation method comprises the steps of S1, engine heating, wherein the initial temperature is room temperature, the stack temperature is 40-85 DEG C, humidifying gas is introduced into a cathode and an anode, and the temperature is higher than the stack temperature by 5-20 DEG C but not higher than 90DEG C; S2, carrying out current activation, specifically, S21, loading current density in a stepped manner from 0 to X1, wherein X1 is greater than or equal to 100mA/cm<2> and less than or equal to 400mA/cm<2>, and the stack temperature is 40-60 DEG C; S22, loading current density in a stepped manner from X1 to less than or equal to 2000mA/cm<2>; S23, reducing the current density in a stepped manner to X3, wherein X3 is greater than or equal to 100mA/cm<2> and less than or equal to 400mA/cm<2>; S24, reducing the current density in a stepped manner to 0, wherein in the steps S22-S24, the backpressure of the cathode and the anode is 0-50KPa and is not 0; and S3, carrying out voltage activation. According to the invention, the stack can be pre-humidified by effectively controlling the parameters of current activation; and the activation process is low in cost and operates under large current, so that the activation efficiency is improved, and the activation time is shortened.

The invention relates to a volatile organic compound catalytic oxidation catalyst with a high chlorine poisoning resisting efficiency, and a preparation method thereof. The catalyst adopts RuO2 as anactive component, and adopts a SnyTi1-yO2 or MOx-SnyTi1-yO2 mixed metal oxide as a carrier. TiO2 is doped with Sn to realize the regulation of the crystal form of the carrier oxide, so the dispersiondegree of RuO2 on the surface of the carrier is greatly improved while constructing the tin-titanium-based catalyst carrier with a high activation performance; and the catalyst has the characteristicsof high catalytic activity to chlorine-containing volatile organic compounds, strong chlorine poisoning resistance, and high selectivity of the product to CO2, has a good removal effect on common volatile organic compounds, and can be widely used in treatment of chlorine-containing organic waste gases in the fields of pharmaceutical, organic synthesis and paint spraying.

A liquid ejection device includes a jetting module including an array of nozzles; a thermal stimulation device associated with each nozzle of the array of nozzles; and a controller in electrical communication with each thermal stimulation device. The controller is configured to provide a first activation waveform to each thermal stimulation device and to provide a second activation waveform to each thermal stimulation device to clean the associated nozzle with liquid emitted from the associated nozzle. The second activation waveform has a higher activation component when compared to the first activation waveform.