2210results about How to "Eliminate damage" patented technology

The present invention provides a method and apparatus for controlling the internal body temperature of a patient. According to the present invention, a catheter is inserted through an incision into a large blood vessel of a patient. By selectively heating or cooling a portion of the catheter lying within the blood vessel, heat may be transferred to or from blood flowing within the vessel and the patient's body temperature may thereby be increased or decreased as desired. The invention will find use in treating undesirable conditions of hypothermia and hyperthermia, or for inducing a condition of artificial hypothermia when desired.

An apparatus for perforation of wellbore walls, which apparatus includes a fiber optic cable having a laser input end and a laser output end. A laser source is operably connected to the laser input end and a laser head is connected to the laser output end. The laser head includes a laser control components for controlling at least one laser beam characteristic. Laser head control elements for controlling the motion and location of the laser head are operably connected to the fiber optic cable. The laser head is enclosed in a protective housing, which protects the fiber optic cable and elements, such as reflectors and lenses for controlling the laser beam emitted by the fiber optic cable disposed therein, from the harsh environments encountered in downhole operations.

A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.

The present invention generally relates to a flexible catheter device capable of being introduced into body passages, withdraw fluids therefrom or introduce fluids thereinto, and which includes electrodes configured to apply electrical signals in the body passage for carrying out thrombus dissolution and / or thrombectomy, wherein one of said electrodes is designed to contact the thrombus material and remove it or dissolve it, and wherein the electrical voltage signals are a unipolar pulsatile voltage signal.