68results about How to "Avoid leakage current" patented technology

According to the preparation method for the positive electrode material of the aluminum electrolytic capacitor, the base material aluminum foil is not fully coated with the aluminum powder slurry, but blank areas are reserved on the left side and the right side, the blank areas are coated with a layer of anti-sticking slurry containing oxide particles or ceramic particles with the melting point higher than that of aluminum, and the melting point of the particles is higher than that of the aluminum; diffusion among aluminum atoms can be effectively blocked, an anti-sticking layer is formed, and adhesion between adjacent aluminum foil layers is prevented; due to the use of the anti-sticking slurry, the adhesive force between the aluminum foil layers is reduced, so that the occurrence of tearing and wrinkling in the processes of coil dividing, sintering, formation and subsequent treatment is reduced, the reliability of the aluminum electrolytic capacitor is improved, and the service life of the aluminum electrolytic capacitor is prolonged; according to the anti-adhesion sintered foil manufactured through the method, the width of the blank area is preferably 5-20 mm, and the design guarantees the sufficient anti-adhesion effect and does not affect the effective use area of the aluminum foil.

The invention relates to the technical field of electronic materials, and discloses a multi-layer shielding type insulating sheet, which comprises a shielding layer used for shielding electromagnetic interference and in direct contact with an insulating layer; the insulating layer is used for electric insulation and is tightly connected with the shielding layer and the heat dissipation layer; the heat dissipation layer is used for heat conduction and is arranged on the close side of the insulating layer and the buffer layer; the buffer layer is used for providing mechanical buffer and structural support and is attached to the heat dissipation layer and the surface coating; the surface coating is used for protecting the material surface and arranged on the outer surface of the buffer layer, and the shielding layer is made of one or more of copper foil, aluminum foil and a graphene coating. By adopting the copper foil, the aluminum foil or the graphene coating as the shielding layer, electromagnetic interference from the outside can be effectively shielded, in an experiment, the electromagnetic shielding effectiveness of the insulating sheet can reach 95 dB or above, the insulating sheet particularly shows excellent electromagnetic shielding performance in a high-temperature and high-vibration environment, and stable operation of an internal circuit and equipment is ensured.

The utility model discloses a silane cross-linked polyvinyl chloride flame-retardant cable, which comprises a cable core, three annularly distributed wire cores are arranged inside the cable core, a composite shielding layer is wrapped outside the cable core, and the composite shielding layer is composed of a conductive layer, an insulation isolation layer and a protection layer. The outer portion of the composite shielding layer is wrapped by a composite flame-retardant layer, the composite flame-retardant layer is composed of a base layer, a heat isolation layer and a reinforcing layer, the outer portion of the composite flame-retardant layer is wrapped by a composite protection layer, and the composite protection layer is composed of an inner protection layer, a waterproof layer, a sheath layer and an anti-ultraviolet layer. The problem that the insulation performance is reduced due to the fact that the insulation material is softened when the cable is in a high-temperature environment for a long time is solved.

The invention provides a hybrid bonding structure and bonding method based on an interlocking structure, and the structure comprises a first chip to be bonded, which is provided with a silicon oxide layer and a first connecting piece protruding out of the silicon oxide layer; the second chip to be bonded is provided with a polyimide layer, a recess arranged in the polyimide layer and a second connecting piece arranged at the bottom of the recess, the surface of the second connecting piece is provided with a first adhesion layer, and the first connecting piece and the second connecting piece are made of copper and / or aluminum; the first chip to be bonded and the second chip to be bonded are configured as follows: before bonding, the height difference of the first connecting piece protruding out of the oxide layer is greater than the height difference of the top surface of the first adhesion layer and the top surface of the silicon oxide layer; the silicon oxide layer is connected with the polyimide layer, and the first connecting piece extends into the recess and is connected with the second connecting piece through the first adhesion layer to form an interlocking structure. The method is used for optimizing the performance of the hybrid bonding process and the bonding structure.

The utility model relates to the technical field of enameled wires, in particular to an enameled wire for a direct current motor, which comprises a wire body. The film body is arranged on the line body, and the film body comprises a PVC sleeve arranged on the line body in a sleeving mode; and the tearing indentation is arranged on the PVC sleeve. The enameled wire structure with high use stability, good current capacity and high conductivity is provided for the high-power direct-current motor through the assembly composed of the wire body and the film body, the enameled wire can adapt to large power and current intensity through the arrangement of the multiple wires, meanwhile, the used mechanical strength is good, and due to the arrangement of the multiple insulating layers, the service life of the enameled wire is prolonged. The direct current motor enameled wire has better current leakage prevention and electric shock protection capabilities, ensures the use quality of the direct current motor, and can reduce the contact between the enameled wire and external air during storage by arranging the film body and performing sleeving protection on the exterior of the wire body, reduce the oxidation of the wire body, prolong the storage time of the wire body and improve the use quality of the wire body in the later period.

This invention relates to the field of electric shock protection technology and discloses an electric shock protection switch cabinet for high-voltage complete sets of electrical equipment. The switch cabinet includes a protective switch cabinet with a rotating door. High-voltage electrical equipment is installed inside the protective switch cabinet. This invention enables an insulating block to close the equipment wiring harness switch, placing the high-voltage electrical equipment in a de-energized state. This eliminates the risk of electric shock to maintenance personnel at the source, prevents personal electric shock accidents, eliminates the fatal threat of live parts, and avoids accidental electric shock caused by maintenance personnel touching live parts. It ensures the safety and convenience of maintenance operations. The insulating board ensures maintenance space and eliminates obstruction hazards. It can block the electric shock circuit formed by contact voltage, preventing grounding short circuits caused by equipment failures at the maintenance site. A potential difference will form on the ground, and personnel stepping on it will be at risk of electric shock due to step voltage. Standing on the insulating board provides insulation from the ground.

The invention relates to the technical field of preparation of insulating materials, in particular to a hydrophobic modified heterocyclic aramid-based insulating film, a preparation method and application. According to the method, a heterocyclic aramid polymer with high breakdown strength and high heat resistance is prepared to serve as a base material, hydrophobic long-chain alkane is grafted through active sites on imidazole of heterocyclic aramid, and the hydrophobic modified heterocyclic aramid-based insulating film is obtained. The heterocyclic aramid is endowed with hydrophobic performance on the basis of flame retardance, temperature resistance, excellent mechanical strength and high breakdown strength of the heterocyclic aramid, and the high-strength, high-modulus, heat-resistant and hydrophobic heterocyclic aramid-based insulating film is successfully prepared. The insulating property of the film is doubly enhanced under the action of imidazole in the film and the assistance of a surface hydrophobic function, and the method is simple and has important significance in application of the heterocyclic aramid insulating material in complex scenes. The problems of poor hydrophobicity and insulativity of a heterocyclic aramid film in the prior art are solved.

The utility model provides extreme environment resistant sensor equipment, which comprises a sensor probe and a sensor connecting line connected with the sensor probe, and is characterized in that the outer surfaces of the sensor probe and the sensor connecting line are provided with protective coatings, and the protective coatings are used for protecting the sensor probe and the sensor connecting line; and the protective coating is a Teflon coating. According to the application, the Teflon coating is arranged, and the Teflon coating has excellent chemical resistance, so that the sensor can be effectively prevented from being eroded and damaged in corrosive environments such as strong acid, strong alkali and the like; the Teflon coating has a wide working temperature range and can keep stable performance even in an extreme high-temperature or low-temperature environment; the Teflon coating has excellent insulation performance and can effectively prevent current leakage and electromagnetic interference, so that the safety and reliability of the sensor are improved.

The invention discloses a high-voltage-resistance AlGaN HEMT device based on a P-type AlGaN back barrier structure and a preparation method. The high-voltage-resistance AlGaN HEMT device comprises a substrate, an AlN nucleating layer, a first AlGaN buffer layer, a P-type AlGaN back barrier layer, a second AlGaN buffer layer, an AlGaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked from bottom to top. The Al component in the first AlGaN buffer layer is gradually reduced in a stepped manner and is reduced to the size of the Al component in the AlGaN back barrier layer to the minimum; the Al component in the second AlGaN buffer layer is gradually reduced in a stepped manner and is reduced to the size of the Al component in the AlGaN channel layer to the minimum; the source electrode and the drain electrode are located at the two ends of the device and penetrate through the GaN cap layer to the inside of the AlGaN barrier layer. The grid electrode is located on the GaN cap layer. The invention relates to an AlGaN-based HEMT (High Electron Mobility Transistor), which has higher breakdown characteristic and reliability.

The utility model provides a series connection OLED display panel. The series connection OLED display panel comprises a substrate and a pixel layer arranged on one side of the substrate. The pixel layer comprises a pixel definition area and a sub light-emitting area; the pixel definition area is provided with an isolation barrier layer; the isolation barrier layer is of a trapezoid structure, the bottom edge of the trapezoid structure is close to the substrate, and the isolation barrier layer separates one charge generation layer in every two adjacent sub-light-emitting areas. The pixel definition area of the series OLED display panel is provided with the isolation barrier layer, leakage current between two adjacent light-emitting areas is prevented, further, different pixel arrangement structures are matched, the light-emitting areas with different colors are provided with the isolation barrier layers with different shapes, and the light-emitting areas with different colors are provided with the isolation barrier layers with different shapes. Therefore, the access between the charge generation layers of the light-emitting areas with different colors can be better blocked, and the problem of transverse crosstalk of the series OLED display panel can be improved.

The utility model discloses a high tensile steel-cored aluminum stranded conductor cable, which comprises a cable body, the cable body comprises a cable core and an outer functional layer, the cable core comprises a wire core, a protective layer and a high-strength alloy armor layer, the protective layer is arranged on the outer side of the wire core, the high-strength alloy armor layer is arranged on the outer side of the protective layer, and the outer functional layer is arranged on the outer side of the high-strength alloy armor layer. The protective layer comprises a wire core sheath layer, an inner insulating layer, a shielding layer and a high-strength tensile fiber layer. The tensile capacity of the steel-cored aluminum stranded conductor cable is enhanced, the operation stability of a power system is improved, and therefore the problems that although a traditional steel-cored aluminum stranded conductor cable has a certain tensile capacity, the tensile performance of the traditional steel-cored aluminum stranded conductor cable can be reduced under extreme weather conditions, external force damage or long-term heavy-load operation and other extreme conditions, and the service life of the cable is prolonged are solved. And the risk of cable breakage is increased.

The utility model, which relates to the technical field of the industrial cable, discloses a high-wear-resistance anti-corrosion industrial installation cable comprising a plurality of insulating layers. The insulating layers are jointly and fixedly connected with polypropylene wax, the outer surface of the polypropylene wax is fixedly connected with a shielding layer structure, the outer surface of the shielding layer structure is fixedly connected with a sheath, the outer surface of the sheath is symmetrically and fixedly connected with limiting structures, and one side, close to the other limiting structure, of one limiting structure is fixedly connected with a first connector structure. According to the utility model, through cooperation of the first connector structure and the second connector structure, the butt joint part of the two sections of cables can be prevented from being damaged or worn, moisture, chemical substances and the like can be prevented from entering the cables, the performance and the service life of the cables can be prevented from being influenced, the butt joint part of the two sections of cables can be protected, and the service life of the cables is prolonged. And damage or breakage caused by external physical damage is avoided.

Embodiments of the present application provide a power supply voltage sampling circuit, a power supply device and a vehicle. The power supply voltage sampling circuit is electrically connected with a power module of a vehicle control system, and the power module of the vehicle control system is electrically connected with a first power supply. The first power supply provides power for the power module. The power supply voltage sampling circuit comprises a first controllable switch and a voltage dividing module. The voltage dividing module is electrically connected with the first power supply through the first controllable switch. Based on an effective signal output by the power module, the first controllable switch is in a first state, and the first controllable switch in the first state makes a pass between the voltage dividing module and the first power supply. Based on an ineffective signal output by the power module, the first controllable switch is in a second state, and the first controllable switch in the second state makes a break between the voltage dividing module and the first power supply.

The invention relates to an all-silicon vertical leadless packaging structure and a preparation method thereof, the all-silicon vertical leadless packaging structure comprises a sensor chip, the sensor chip is connected to a ceramic substrate through a highly-doped silicon vertical conductive structure, the ceramic substrate is connected with a conductive pin, and the conductive pin is electrically connected with the highly-doped silicon vertical conductive structure. The outer sides of the sensor chip, the highly-doped silicon vertical conductive structure and the ceramic substrate are connected with an alloy shell; the sensor chip adopts an SOI (Silicon On Insulator) silicon wafer and a P-type highly-doped low-resistivity silicon wafer for a highly-doped silicon vertical conductive structure; according to the invention, a full-silicification packaging structure without participation of metal or conductive solder can be realized, and the packaging structure is suitable for application in an ultra-high-temperature environment, has the advantages of simple manufacturing process, stable electrical connection, low cost and the like, and is easy for mass production.

The present invention relates to the field of MOS semiconductor technology, and discloses a high-voltage silicon carbide power MOSFET terminal structure, including a MOS cell structure located in the middle and a terminal structure located at the end, wherein the MOS cell structure and the terminal structure are both composed of a drain, a metal source and a semiconductor epitaxial layer, wherein the semiconductor epitaxial layer includes a substrate layer and a diffusion layer; the MOS cell structure includes a gate, a gate oxide layer covered on the gate surface, an N-well layer, a highly doped P-well layer 2 and a low-doped P-well layer 1, and the terminal structure is composed of a main junction and a junction terminal extension JTE; the junction terminal extension JTE includes a JTE region located at the surface of the diffusion layer. The present invention introduces multiple inner isolation rings as isolation rings in the main junction, which can block the current path formed by charging and discharging during the device switching process, prevent the formation of a strong electric field and leakage current at the main junction, and avoid the risk of damage to the device during high-speed switching.

The utility model discloses a telescopic high-frequency operation electrode, and relates to the technical field of electrode equipment for medical operation, the telescopic high-frequency operation electrode comprises a device main body and a micro motor connected with the device main body, the micro motor is arranged on the left side of the device main body, the micro motor is connected with a threaded rod, and the threaded rod is in sliding connection with a sliding block; the sliding block is connected with the device shell; a connector is arranged on the right side of the device shell, a transmitter is arranged in the connector, the top of the transmitter is connected with a circuit board through a resistor, the circuit board is connected with the top of the device body, and the right side of the transmitter is connected with an electrode mechanism. Through the arrangement of the sliding block, the threaded rod and other equipment, when the connector and the electrode mechanism need to extend, the micro motor can be started to enable the threaded rod to rotate, so that the sliding block is driven to move, the motor mechanism can stretch out and draw back to extend, and through the arrangement of the motor mechanism, current leakage can be better prevented.

The invention discloses a semiconductor device which comprises a substrate, a semiconductor channel layer and a first dielectric layer which are sequentially arranged from bottom to top, the semiconductor device further comprises a source electrode, a drain electrode and a gate electrode, and the source electrode and the drain electrode are arranged at intervals, penetrate through the first dielectric layer and are in contact connection with the semiconductor channel layer; a second dielectric layer is further arranged on the first dielectric layer, the gate electrode penetrates through the second dielectric layer and is in contact connection with the first dielectric layer, the gate electrode is in a closed ring shape, and the projection of the gate electrode in the vertical direction surrounds the projection of the source electrode or the drain electrode in the vertical direction. The semiconductor device does not need to be manufactured by adopting an ion implantation process, the cost is lower, in addition, the gate electrode is designed to be in a closed ring shape, and the projection of the gate electrode in the vertical direction surrounds the projection of the source electrode or the drain electrode in the vertical direction, so that the source electrode or the drain electrode in the gate electrode is prevented from leaking current, and the reliability of the semiconductor device is improved. And the performance of the semiconductor device is better.

The invention relates to a slot lock for electrically insulating a first stator segment with respect to a second stator segment of the stator, to a stator and to an electric machine. The slot lock comprises a first end region and a second end region, the first end region being configured to contact the first stator segment and the second stator segment at a radially inner limit, and the second end region being configured to contact the first stator segment and the second stator segment at a radially outer limit. Furthermore, the slot lock comprises a connecting region, which is designed to connect the first end region and the second end region in a cavity between the first stator segment and the second stator segment. In this case, the first end region and the second end region are sectioned by a common radial plane, the axis of rotation of the stator lying in the radial plane. Furthermore, the connecting region has at least one tolerance compensation region, which extends next to the radial axis.

The utility model discloses an armored polyphosphazene insulated power cable, relates to the technical field of insulated power cables, and aims to solve the problems that in the installation, maintenance and replacement processes of a conventional power cable, if misoperation may cause damage to an insulating material, and if the insulating effect is poor, a cable conductor may be in direct contact with the surrounding environment, and the power cable cannot be damaged. Therefore, the conductor is affected with damp, corroded, short-circuited and the like. A cable core comprises wire cores, a filling layer and a steel wire rope reinforcing core, the five wire cores are annularly arranged in the cable core, each wire core comprises a conductor and a composite insulation shielding layer, the conductors are located in the wire cores, the composite insulation shielding layer is arranged in the filling layer, and the composite insulation shielding layer is arranged in the filling layer. A lining layer is arranged on the outer side of the cable core, a composite insulating layer is arranged on the outer side of the lining layer, a steel wire armor layer is arranged on the outer side of the composite insulating layer, and an outer sheath is arranged on the outer side of the steel wire armor layer.

The invention relates to a display device and a method of manufacturing the same. The display device may include: a substrate; a driving element layer disposed on the substrate; a line layer disposed on the driving element layer and including a first inorganic layer and a second inorganic layer disposed on the first inorganic layer; and a light emitting element layer disposed on the line layer and including a plurality of first electrodes, an intermediate layer, and a second electrode sequentially stacked on each other. The line layer may include a trench between the first electrodes, the first inorganic layer and the second inorganic layer being absent in the trench. The second inorganic layer may include an undercut region in the trench below the first inorganic layer.

The utility model discloses an integrated energy storage container and an assembly thereof, and the container comprises a container body which is provided with a first accommodating chamber and a second accommodating chamber which are isolated from each other; the energy storage system comprises a liquid flow system arranged in the first accommodating chamber and various electrical equipment arranged in the second accommodating chamber; the liquid flow system comprises a liquid storage tank, an electric pile, a liquid supply pipe connected with the liquid storage tank and the electric pile, and a circulating pump arranged on the liquid supply pipe; various electrical devices include a process control system connected to the flow system, a battery management system connected to the stack, and a temperature control system.

The present disclosure relates to a circuit applied in multiple power domains. The present invention discloses a circuit applied in multiple power domains, which includes a first circuit block and a second circuit block, wherein the first circuit block receives a first supply voltage from a first power domain, and the second circuit block receives a second supply voltage from a second power domain. The first circuit block includes a first amplifier and a switch circuit, the first amplifier receives an input signal to generate a processed input signal, when the second circuit block is powered by the second supply voltage, the switch circuit transmits the processed input signal to the second circuit block; and when the second circuit block is not powered by the second supply voltage, the switch circuit disconnects the path between the first amplifier and the second circuit block.

The invention relates to the field of electric power engineering, in particular to an electric power insulation fireproof material technology. The invention relates to an electric insulation fireproof plugging potting adhesive, which comprises an organic silicon base material, a fireproof additive, a high-temperature-resistant filler and an environment-friendly flame retardant, and is doped with a fragment-shaped glass fiber mesh which is used as a filler, the organic silicon base material comprises 107 silicone oil, a cross-linking agent, a silane coupling agent and a catalyst; the glass fiber net comprises a net body and expanded glass fibers; the net body is formed by weaving warp yarns and weft yarns; the warps and the wefts are made of glass fibers; the lengths of at least part of the warps and at least part of the wefts exceed the net body part to form expanded glass fibers. According to the design, a polyurethane modified organic silicon material is adopted, and the characteristics of excellent high temperature resistance, low temperature resistance and chemical corrosion resistance are achieved. And the modified dimethyl vinyl siloxane is also used, so that the flexibility and weather resistance of the material are improved. In addition, the inorganic environment-friendly flame retardant material is also added, so that the safety and the environment-friendly property of the product are ensured.

The utility model provides a grinding wheel grinding material plating deposition rotation bearing assembly which comprises a bearing conduction component, a close-fit positioning component, an outer end covering component, an inner end switching component and an overhanging rotation component, and the overhanging rotation component of the rotation bearing assembly is installed on the inner end switching component through a detachable connecting structure. The bearing conduction component is mounted in electroplating equipment through a rotating structure, so that the whole bearing conduction component, the tight fit positioning component, the outer end covering component and the inner end switching component can rotate in the electroplating equipment, it is ensured that all parts of the grinding wheel base body can be evenly exposed in electroplating liquid, and the even plating deposition effect is achieved; through the locking and pressing effect of the inner end pressing block and the outer end pressing block, the grinding wheel base body can be kept stable in the electroplating process and cannot move or deflect due to flowing of electroplating liquid or other factors, it is ensured that the grinding wheel base body can be evenly plated in the electroplating process, and therefore the structural balance of the grinding wheel is improved, and the service life of the grinding wheel is prolonged.

The invention relates to the technical field of electric meter boxes, and discloses a moisture-proof electric meter box for an intelligent electric meter, which comprises an electric meter box main body, a shell is arranged in the electric meter box main body, a line protection mechanism is arranged in the shell, and the line protection mechanism comprises a first fuse holder, a second fuse holder and a fuse; a plurality of fuses are arranged, one of the fuses is arranged between the first fuse seat and the second fuse seat as a main fuse, and the other fuses are used as standby fuses; a replacement mechanism is further arranged in the shell and comprises a rotating disc, a plurality of bearing assemblies are installed on the rotating disc in an equidistant circumferential array mode, and the fuses are installed on the bearing assemblies respectively. According to the moisture-proof electric meter box for the intelligent electric meter, after the fuses are fused due to line protection, mechanical devices in the electric meter box can be intelligently triggered, the fused fuses are automatically detached, and standby fuses are installed.

The present invention discloses a method for manufacturing a semiconductor device, which belongs to the field of semiconductor technology. The manufacturing method includes: providing a substrate, forming a pseudo gate on the substrate; forming a sidewall structure on both sides of the pseudo gate; forming an interlayer dielectric layer on the substrate, the surface of the dielectric layer is flush with the surface of the pseudo gate; removing the pseudo gate to form a recess; forming a first gate dielectric layer at the bottom and sidewall of the recess, the first gate dielectric layer is a high dielectric constant dielectric; forming a second gate dielectric layer on the first gate dielectric layer; annealing the first gate dielectric layer and the second gate dielectric layer; depositing a metal work function layer and a metal layer on the second gate dielectric layer to form a metal gate. Through the manufacturing method of a semiconductor device provided by the present invention, leakage current caused by crystallization of the first gate dielectric layer can be prevented, interface defects can be greatly reduced, stress-induced leakage current can be reduced, and negative bias temperature instability can be improved.

This invention provides a hybrid bonding structure and bonding method based on an interlocking structure. The hybrid bonding structure includes: a first chip to be bonded, having a silicon oxide layer and a first connector protruding from the silicon oxide layer; and a second chip to be bonded, having a polyimide layer, a recess within the polyimide layer, and a second connector at the bottom of the recess. The surface of the second connector is provided with a first adhesive layer. The materials of the first and second connectors include copper and / or aluminum. The first and second chips to be bonded are configured such that: before bonding, the height difference of the first connector protruding from the oxide layer is greater than the height difference between the top surface of the first adhesive layer and the top surface of the silicon oxide layer; after bonding, the silicon oxide layer and the polyimide layer are connected, and the first connector extends into the recess and is connected to the second connector using the first adhesive layer, thus forming an interlocking structure. This invention is used to optimize the performance of the hybrid bonding process and bonding structure.

The present disclosure provides a memory device, including: a semiconductor substrate having an active region; and a word line crossing the active region. The memory element also includes a first source / drain region and a second source / drain region disposed in the active region and on opposite sides of the word line. The memory element also includes a bit line contact disposed on the first source / drain region and electrically connected to the first source / drain region. The bit line contact point has a tapered profile. Further, the memory element includes a capacitor contact disposed on the second source / drain region and electrically connected to the second source / drain region.

A silicon carbide ohmic contact electrode structure without step etching is characterized in that an epitaxial layer different from a substrate in doping type grows on the upper surface layer of a silicon carbide substrate slice, a metal electrode array is manufactured on the surface of the epitaxial layer, and the manufacturing process of a metal electrode does not depend on tedious micro-nano manufacturing photoetching, etching and other processes; ohmic contact electrodes are separated by using an adhesive tape with uniform edge geometric morphology as a mask, and finally, a sample is uniformly cut to form a rectangular transmission line electrode without steps; based on the principle of a rectangular transmission line (TLM), preparation of the silicon carbide ohmic contact electrode which is simpler in structure and smaller in leakage current error is achieved, the problem that a traditional electrode rectangular transmission line method is complex in manufacturing process is solved, the manufacturing cost is reduced, meanwhile, the electrode preparation time is greatly shortened, and the silicon carbide ohmic contact electrode is easy to achieve.