317results about How to "Reduce signal delay" patented technology

A method of producing a reconfigurable circuit device for running a computer program of moderate complexity such as multimedia processing. Code for the application is compiled into Control Flow Graphs representing distinct parts of the application to be run. From those Control Flow Graphs are extracted basic blocks. The basic blocks are converted to Data Flow Graphs by a compiler utility. From two or more Data Flow Graphs, a largest common subgraph is determined. The largest common subgraph is ASAP scheduled and substituted back into the Data Flow Graphs which also have been scheduled. The separate Data Flow Graphs containing the scheduled largest common subgraph are converted to data paths that are then combined to form code for operating the application. The largest common subgraph is effected in hardware that is shared among the parts of the application from which the Data Flow Graphs were developed. Scheduling of the overall code is effected for sequencing, providing fastest run times and the code is implemented in hardware by partitioning and placement of processing elements on a chip and design of the connective fabric for the design elements.

A semiconductor device has multiple power-supply through electrodes, grounding through electrodes, and signal-routing through electrodes made through a semiconductor chip. The power-supply through electrodes, the grounding through electrodes, and the signal-routing through electrodes differ mutually in cross-sectional area. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.

A method for fabricating a pixel array substrate is provided. The method includes: forming a plurality of gate electrodes, a plurality of scan lines, a plurality of data line patterns and a plurality of pixel electrode patterns on a substrate; then forming a channel over each of the gate electrodes and a plurality of contact window openings for exposing the data line patterns; then forming a plurality of contact windows electrically connected with the data line patterns; and then forming a plurality of contacting portions which are electrically connected with the contact windows, a plurality of source electrodes which are electrically connected with the data line patterns, and a plurality of drain electrodes which are electrically connected with the pixel electrodes. The data line patterns at each column are electrically connecting with each other via the contacting portions and the contact windows so as to form a data line.

Some embodiments provide a reconfigurable integrated circuit (“IC”). This IC has several reconfigurable circuits, each having several configurations for several configuration cycles. The reconfigurable circuits include several time-extending reconfigurable circuits. During the operation of the IC, each particular time-extending reconfigurable circuit maintains at least one of its configurations over at least two contiguous cycles, in order to allow a signal to propagate through a signal path, which contains the particular time-extending circuit, within a desired amount of time.

A method for fabricating an integrated circuit package or arrangement includes providing a carrier having a surface topography of projections or recesses for supporting individual semiconductor circuit chips having conversely matching bottom surface topographies to permit self-aligned positioning of the chip on the carrier. Chips are provided such that top faces of neighboring chips lie substantially in planes separated by a distance of greater than 0.0 mu m. The carrier is arranged and dimensioned such that the neighboring chips are separated by a gap G or spacing in a range of 1 mu m<G</=100 mu m. A metallic interconnect is provided over the top faces and the gap. Preferably, the interconnect has a gradual slope over the gap.

It is a multimedia information transmission time frequency matrix two-dimensional sub-channel dynamic alignment method, which belongs to digit information transmission technique field and comprises the following steps: to generate two-dimensional time zone and frequency zone matrix TFM channel alignment pattern according to certain rules; to align the multimedia program code flow input to the relative TDS-OFDM signal frame and OFDM sub-carrier wave according to the alignment pattern; to insert TFMp matrix information into the head frame group of TDS-OFDM; finally to send the complete signal of TDS-OFDM.

A driver circuit includes a circuit 200, a transistor 101_—1, and a transistor 101_—2. A signal is selectively input from the circuit 200 to a gate of the transistor 101_—1 and the transistor 101_—2, so that the transistor 1011 and the transistor 101_—2 are controlled to be on or off. The transistor 101_—1 and the transistor 101_—2 are turned on or off; thus, the wiring 112 and the wiring 111 become conducting or non-conducting.

Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. The present invention offers an improved signal to noise ration. The present invention provides for the fabrication of improved transmission lines for silicon-based integrated circuits using conventional CMOS fabrication techniques. Embodiments of a method for forming transmission lines in an integrated circuit include forming a first layer of electrically conductive material on a substrate. The method includes forming a first layer of insulating material on the first layer of the electrically conductive material. The first layer has a thickness of less than 1.0 micrometers (μm). A transmission line is formed on the first layer of insulating material. The transmission line has a thickness and a width of approximately 1.0 micrometers. A second layer of insulating material is formed on the transmission line. And, a second layer of electrically conductive material is formed on the second layer of insulating material.

An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.

It is an object to suppress deterioration in characteristics of a transistor in a driver cricuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off.

The invention provides a manufacturing method of an array substrate as well as the array substrate and a display device, belonging to the field of liquid crystal display. The array substrate comprises a display region and a non-display region, wherein the display region comprises a grid line, a data line and a plurality of pixel units located between the grid line and the data line; the non-display region comprises a grid welding disc and a data welding disc, wherein each pixel unit comprises a thin film transistor, a pixel electrode and a public electrode; the pixel electrode is connected with a drain electrode of the thin film transistor; the public electrode comprises a first public electrode located above the pixel electrode and a second public electrode located above the data line; a protection film is arranged between the layer on which the public electrode is located and the layer on which the pixel electrode is located; and organic insulating films are arranged between the pixel electrode and the data line, and between the thin film transistor and the protection film. According to the invention, the signal delay on the data line in the array substrate can be reduced.

The invention provides a manufacture method of an array substrate, the array substrate and a display device. A display region of the array substrate comprises a gate line, a data line and a plurality of pixel units. A non-display region comprises a gate bonding pad and a data bonding pad. Each of the pixel units comprises a thin film transistor, a pixel electrode and a common electrode. The pixel electrode is connected to a drain electrode of the thin film transistor. The common electrode comprises a first common electrode arranged above the pixel electrode and a second common electrode arranged above the data line. A protective film is arranged between a common electrode layer and a pixel electrode layer. An inorganic insulating film and an organic insulating film are arranged between the pixel electrode and the data line and between the thin film transistor and the protective film, respectively. The inorganic insulating film is formed above the data line, a source and the drain of the thin film transistor, and a semiconductor layer of a channel region, and the organic insulating film is arranged above the inorganic insulating film. The invention can reduce signal delay on the data line, and prevent generation of leakage current in the thin film transistor at a high temperature.

A display device including: a substrate including a display area in which pixels are positioned and a peripheral area around the display area; a common electrode and a pixel electrode that are positioned on the display area and overlapping with each other, with a first insulating layer disposed therebetween; a common voltage line positioned on or below the common electrode and contacting the common electrode; an edge common voltage line connected with the common voltage line and formed along an edge of the display area; and a first common voltage transfer line contacting the edge common voltage line in the peripheral area and configured to transfer a common voltage to the common voltage line.

A liquid crystal display in which the common voltage line is disposed directly on or directly under the common electrode directly contacts the common electrode such that a signal delay of the common voltage line may be reduced and simultaneously a reduction in the aperture ratio of the liquid crystal display may be prevented.

The invention relates to a low-dielectric laser direct structuring composite material suitable for 5G communication. The composite material is composed of the following components in parts by weight:52 to 86 parts of base resin, 0 to 30 parts of glass fibers, 10 to 30 parts of a filling agent, 1 to 9 parts of a flame retardant, 4 to 15 parts of a toughening agent, 0.1 to 1 part of a lubricating agent, 0.2 to 1 part of an antioxidant and 10 to 30 parts of a laser sensitive additive. A preparation method of the composite material comprises the steps that a twin-screw extruder is used for processing, the melt extrusion temperature is 250-380 DEG C, and the screw rotating speed is 150-300 rpm/min. The composite material has low dielectric property, so that improvement of the transmission speed of 5G communication millimeter wave signals is facilitated, the signal delay is reduced, and the signal loss is reduced; the composite material has the LDS processing capacity, can be rapidly prepared in a small size and a large number, can be subjected to batch laser etching and chemical plating to form a metal connecting circuit, and is an optimal solution of a 5G plastic antenna oscillator material.

The invention discloses a packaging and manufacturing method for a thermal enhanced quad flat no-lead flip chip. A thermal enhanced quad flat no-lead flip chip package piece structure comprises a lead framework, a first metal material layer, a second metal material layer, IC chips with convex points, an insulating filler material, a sticking material, radiating fins, heat conducting spacers and a plastic package material, wherein the lead framework comprises a chip carrier and a plurality of pins arranged in multiple circles around the chip carrier; the first metal material layer and the second metal material layer are respectively configured on the upper surface and the lower surface of the lead framework; the IC chips with the convex points are invertedly welded and configured at the position of the first metal material on the upper surface of the lead framework; the insulating filler material is configured below the stepped structure of the lead framework; the heat conducting spacers are configured between the IC chips and the chip carrier through the sticking material; and the radiating fins are configured on the edgeless surfaces of the IC chips through the sticking material and wrapped by the plastic package material to form a package piece. The QFN (Quad Flat No-lead) package piece structure provided by the invention has the advantages of high reliability, low cost and high I/O (Input/Output) density.

A mobile communication system includes a mobile station (5) connected to a core network (1) through a communication line intervened by a base station (3a), and a radio control station (2) configured for controlling the setting of a radio link for the mobile station (5) in the base station (3a). The base station (3a) monitors the congested state of the communication line, generates a state indicator indicating the congested state/non-congested state of the communication line, based on the results of monitoring, and transmits the state indicator generated to the radio control station (2). The radio control station (2) recognizes the current state of the communication line based on the state indicator received from the base station (3a).

When the radio control station (2) recognizes that the communication line is in the congested state and receives a line connection request from the mobile station (5), the control station (2) transmits a control signal for refusing the line connection request received to the mobile station (5) without performing control for setting the radio link.

The invention relates to a liquid crystal display device and a manufacture method thereof. The liquid crystal display device comprises a glass basic board as well as a grid scanning line layer, an insulating layer, a data line layer, a memory capacitance and a pixel electrode layer which are formed on the glass basic layer in sequence; wherein, the insulating layer is formed by overlapping an inorganic film and an organic film or an inorganic film with low specific inductive capacity or an organic film with low specific inductive capacity. The liquid crystal display device and a manufacture method thereof can improve the aperture opening ratio thereof, and reduce the signal delay of the data line or the grid scanning line.

The invention discloses a display panel and a display apparatus. A display region of the display panel comprises multiple columns of pixels; the display region is divided into a second display regionand a first display region; the number of the pixels in one column in the second display region is less than that of the pixels in one column in the first display region; first data lines connected with the pixels in each column are arranged in the first display region; second data lines connected with the pixels in each column are arranged in the second display region; in the column direction, the length of the first data lines is longer than that of the second data lines; and the display panel also comprises third data lines which are in one-to-one correspondence to the second data lines andare electrically connected therewith. By virtue of addition of the third data lines electrically connected with the second data lines in the embodiment, the length difference between the first data lines and the second data lines is overcome; and in signal transmission, the loading of the first data lines and the second data lines can be improved, and the signal time delay between the first datalines and the second data lines can be lowered.

Copper pillar tin bump on semiconductor chip comprises a copper layer composed on chip and a tin layer entirely wrapping whole outer surface of said copper layer. A method for forming of the copper pillar tin bump on semiconductor chip comprises: composing the first copper layer on said chip; applying photoresist to said first copper layer, exposing and developing a part of said photoresist, composing the copper pillar layer at the developed part of photoresist, composing the upper tin layer, removing said photoresist, removing said the first copper layer except disposing place of copper pillar layer, composing side tin layer. The minute pattern makes it possible to form a high density packaging by reducing a pitch of copper pillar tin bump. Signal delay can be reduced by low electric resistance, and underfill can be easily soaked.