40results about How to "Low Impedance Characteristics" patented technology

The invention discloses a grid-connected inverter frequency coupling impedance characteristic extraction method based on multi-sine-wave signal injection. The method comprises the steps: adopting an impedance measuring device based on a model predictive control method to realize the low-impedance characteristic in a broadband range; decomposing the multi-input and multi-output frequency coupling impedance characteristics of the grid-connected inverter into four single-input and single-output subsystems and performing independent measurement; measuring the broadband frequency coupling impedancecharacteristics of the grid-connected inverter through one-time signal injection, so enough measurement precision and rapidity are ensured. Compared with an existing frequency coupling impedance characteristic extraction method, the frequency coupling impedance characteristic extraction method has the advantages that the impedance characteristic extraction efficiency is remarkably improved whilethe measurement precision is guaranteed, and faster and more efficient frequency coupling impedance characteristic extraction can be achieved.

The invention discloses a conducting material doped PDMS composite film capable of improving the longitudinal electric charge density of a generator frictional layer and a preparation method thereof.The preparation method comprises the following steps: (1) taking a substrate, and taking an aluminum foil to be adhered to the substrate; (2) spin-coating a PDMS solution on the aluminum foil, vacuumizing in a vacuum cavity after spin-coating, and then heating and curing; (3) spraying gold on the surface of the PDMS with a magnetron sputtering method, (4) carrying out plasma treatment, and spin-coating the PDMS solution; (5) vacuumizing in the vacuum cavity, heating and curing; and (6) repeating the step three to the step five to obtain the PDMS gold composite film with different numbers of gold layers. A G-TENG with high transfer electric charge density and biocompatibility and low impedance characteristic is successfully prepared, an internal electronic area is added by burying gold layers in the near surface of a frictional surface, so that the output of TENG is increased, and the gold layers are beneficial for the drifting of electrons inside the frictional layer and play a role oftrapping the electrons.

The invention proposes a processing liquid, and relates to the technical field of a solid-state electrolytic capacitor. The processing liquid comprises a solute and a solvent, wherein the solute is an organic or inorganic acid compound, the solvent comprises a water polymer material and an organic solvent, the organic or inorganic acid compound is selected from one or more of phosphoric acid, boric acid, benzoic acid, adipic acid, azelaic acid, sebacic acid, isophthalic acid, phthalic acid, maleic acid, benzene sulfonic acid and citric acid, and the water polymer material is selected one or more of polyethylene alkylene glycol, polyvinyl alcohol, polyethylene glycol glyceryl alcohol ester, polyethylene glycol glyceryl alcohol ester, polyethylene glycol sorbitol ether, polyethylene glycol, polybutylene glycol, polyethylene glycol and polyethylene oxide which has non-volatile characteristic. The processing liquid and a traditional dispersion liquid are used in a matching way, thus, the development of the dispersion liquid is prevented, the production period is shortened, and the cost is reduced.

The invention relates to the technical field of automobile wire harness manufacture, in particular to an automobile wire harness crimping technology. A low-impedance automobile wire harness connecting terminal crimping technology is implemented by crimping a connecting terminal and an automobile wire harness body together by stamping equipment, and includes the technological steps of wire harness splitting, die debugging, crimping, tension test and performance detection. By the aid of the technical scheme, the low-impedance automobile wire harness connecting terminal crimping technology has the advantages of easiness in control of equipment input and improvement cost, good generated effects and capability of enabling wire harnesses to have low impedance characteristic and meet more demands of the market.

In a connector (1) including an insulator (2) and first and second signal contacts (3,4) held by the insulator, each of the first and the second signal contacts includes a fixed portion (3a,4a) fixed to the insulator, a contacting portion (3b,4b) connected to one end of the fixed portion and extending in a first direction (A1), a bent portion (3c,4c) connected to the other end of the fixed portion, a first intermediate portion (3d,4d) extending from the bent portion in the first direction, a second intermediate portion (3e,4e) extending from the first intermediate portion in a second direction (A2), and a terminal portion (3f,4f) extending from the second intermediate portion in the first direction. The first intermediate portions are placed at positions which are different from each other in the second direction. The second intermediate portions are different from each other in the first direction. The bent portions are shaped to make the first and the second signal contacts be substantially equal in total length to each other.

The invention discloses a converter station comprising an RL type superconducting current limiter and a direct-current circuit breaker and a direct-current fault processing strategy of the converter station. According to the technical scheme, on one hand, the high-resistance characteristic of the resistance-type superconducting current limiter after a fault occurs is utilized, and on the other hand, the suppression effect of the reactor on the fault current is utilized, so that the on-off capability of the direct-current circuit breaker under the existing technical conditions can be fully exerted; meanwhile, the stability problem possibly caused by the fact that the smoothing reactor is too large in a normal operation state can be solved. In addition, the invention provides a set of complete direct current fault processing strategy for the converter station comprising the RL type superconducting current limiter and the direct current circuit breaker.

The invention provides a cage-shaped center-fed broadband antenna, which comprises an antenna top cover, a radome, a cable and an interface socket, wherein the antenna top cover is fixedly connected with the top of the radome; an antenna radiator is arranged in the radome; the antenna radiator consists of an upper radiator positioned inside the upper part of the radome and a lower radiator positioned inside the lower part of the radome; the upper radiator and the lower radiator are connected together through an intermediate connection body; the middle part of the antenna radiator is reinforced through a middle support; the top of the upper radiator and the bottom of the lower radiator are both provided with antenna-supporting covers; one end of the cable is connected with the top of the lower radiator, and the other end of the cable is connected with the interface socket; and the interface socket is fixed at the bottom of the radome. As the antenna adopts a broadband oscillator as the antenna radiator, moves up feed points, is provided with the middle support, and is integrally sealed, the antenna suffers less influence of antenna carriers or surrounding environment, is strong in aseismic anti-impact performance, and can be widely applied to mobile short/ultrashort-wave communication of vehicles, naval vessels and the like.

The invention discloses an electrical cable higher in safety. The electrical cable comprises an outer protection sleeve and inner protection sleeves. The outer protection sleeve is composed of a flame retardant protective layer, a polyvinylidene chloride protection film layer, a shielding layer and an aluminum foil layer from outside to inside. The outer protection sleeve is internally provided with an inverted-Y-shaped framework. The tail end of the inverted-Y-shaped framework is fixedly connected with the aluminum foil layer. The inverted-Y-shaped framework is internally provided with an aluminum framework in an embedded mode. Each inner protection sleeve is sequentially divided into a high-intensity fiber yarn layer and a waterproof layer from outside to inside. According to the electrical cable higher in safety, the shielding layer is additionally arranged in the outer protection sleeve, most electromagnetic radiation can be shielded, the body health of a user in the using process is guaranteed, and the additionally-arranged aluminum cross-shaped framework makes electric contact with the aluminum foil layer in the outer protection sleeve, so that transmission consumption is lowered to the minimum; the high-intensity fiber yarn layer, the waterproof layer and a flame retardant protection layer are additionally arranged, so that the tensile, waterproof and fireproof performance of the electrical cable can be further enhanced.

The present invention provides a PIN connector and a watch, and belongs to the electronic equipment technology field. The PIN connector comprises a substrate on which a plurality of conductive columnsare arranged, the conductive columns comprise the gold-plated copper columns contacted with a mainboard and the stainless steel columns contacted with the pins, and the gold-plated copper columns areconnected with the stainless steel columns. According to the PIN connector provided by the present invention, the conductive columns are divided into the gold-plated copper columns and the stainlesssteel columns, the stainless steel columns are used to contact the pins, and the old-plated copper columns are used to contact the mainboard. The stainless steels have the very strong sweat corrosionresistance, the internals of the stainless steels adopt the gold-plated coppers, and the pins are compressed to be contacted with the conductive columns. The stainless steels have the high corrosion resistance and the low impedance characteristic, thereby being suitable for the large current rapid charging requirement of the watch. The connector is used on a bottom casing of the watch, so that thethickness of the watch can be made thinner, and a good usage effect is realized.

The invention discloses a signal processing circuit and method. The circuit comprises a signal source which is used for providing a source signal; an amplifier which is connected with the signal source and amplifies the source signal; a zero-setting circuit which is connected with the amplifier and is used for compensating the amplified signal; an analog-digital converter which is connected with the amplifier and the zero-setting circuit, and converts the compensated circuit into a digital signal; and a digital signal processor which is connected with the analog-digital converter and is used for carrying out the operation processing of the digital signal. The zero-setting circuit is connected to the output end of the amplifier, and the output end of the amplifier provides a compensation current, thereby inhibiting the zero drift of the signal source and the zero drift of the amplifier. The signal processing circuit inhibits the zero drift of a plurality of circuit modules through the zero-setting circuit which is connected with the output end of the amplifier.

The invention provides a conducting wire transmission technology and a shielding composite technology which adopt a unique physical method and a gold coating shielding layer to achieve purposes and are applicable to producing all conducting wires used for transmitting current and digital, video and audio signals; the physical method develops a unique welding way through a microwave transmission theory and improves the structural characteristics of wires; the gold coating shielding technology develops unique shielding and current (including digital, video and audio signals) transmission ways through the microwave transmission theory, deepens the improvement on the structural characteristics of the wires and matches with various wire manufacturing ways, such as twisting, winding or weaving, and the like, strengthens the internal and external shielding effects of the wires, reduces electromagnetic interference so as to reduce characteristic impedance and wire resistance, assists or causes the conductivity of main wires to be optimized, enhances control power and the extension of high and low two-pole bandwidth as well as avoids distortion caused by various noises and signal interferences at the same time.

An electrolytic capacitor having a low impedance characteristic, having a high withstand voltage characteristic of 100V class, wherein the electrolytic capacitor provides an excellent high temperature life characteristic. The electrolyte solution containing the aluminum tetrafluoride salt is used. The moisture content of the capacitor element is adjusted to 0.7% by weight or less, wit respect to the weight of the capacitor element, preferably 0.5% by weight or less, and most preferably 0.4% by weight or less. In this way, the electrolytic capacitor having the low impedance characteristic and the high resistance voltage characteristic, and the excellent high temperature life characteristic is provided.

The invention relates to the technical field of electronic information, and discloses an envelope impedance control structure and a power amplifier structure. The envelope impedance control structurecomprises a matching network, a power supply network and an envelope impedance control network; one end of the matching network is a signal input end, the other end of the matching network is a signaloutput end, and the matching network is used for impedance conversion; one end of the power supply network is connected into the matching network, the other end of the power supply network is connected with a power supply, and the power supply network is used for providing direct-current bias for the transistor; one end of the envelope impedance control network is connected with the matching network, the other end of the envelope impedance control network is grounded, and the envelope impedance control network is used for controlling the impedance of an envelope frequency band. According to the power amplifier structure, envelope impedance control structures are arranged at the input end and the output end of a transistor. According to the envelope impedance control network, the envelopeimpedance is flexibly controlled under the condition that the fundamental wave working band of the power amplifier is not influenced, and the envelope impedance can be always lower than a certain threshold value in a broadband range.

A magnetic field detection sensor includes a magneto-impedance element and detects an external magnetic field from an output obtained by applying alternating current to the magneto-impedance element using a magneto-impedance effect. The magneto-impedance element includes a non-magnetic board and a magnetic film formed on a surface of the non-magnetic board, a longitudinal direction of the magnetic film is set as a detection direction of the external magnetic field, and magnetic anisotropy is provided such that a magnetization easy axis of the magnetic film is the same as the detection direction of the external magnetic field. The magnetic field detection sensor further includes a magnetic field generating portion which generates a magnetic field in a thickness direction of the magnetic film.

The invention relates to the technical field of semiconductor manufacturing, and discloses a third-generation semiconductor contact window structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, and depositing a compound epitaxial layer on the substrate; depositing a first metal layer on the compound epitaxial layer through a metal evaporation process; depositing an isolation layer on the compound epitaxial layer and the first metal layer; a through hole is correspondingly formed in the portion, located above the first metal layer, of the isolation layer and penetrates through the isolation layer, and the inner wall of the through hole is an inclined cambered surface; and depositing a second metal layer on the isolation layer and the through hole through a metal evaporation process. Damage and impurity ion pollution to a lattice structure on the surface of a compound epitaxial layer by a metal sputtering process are effectively prevented, and the contact impedance of a third-generation semiconductor contact window structure is reduced.