18 results about "Metal evaporation" patented technology

The invention relates to a long-distance span air bridge processing method. The processing method comprises the following steps: depositing a first photoresist layer on a substrate material, performing exposure / development, etching the substrate material by adopting a wet method, forming a first table top on the substrate material, and removing the first photoresist layer; according to the same operation, continuously coating the second photoresist layer to the nth table surface; coating an (n + 1) th photoresist layer on the outer side of the nth table top, performing exposure / development, performing metal evaporation, and removing metal and the (n + 1) th photoresist layer on the outer side of the nth table top to complete air bridge metal deposition; and coating an (n + 2) th photoresist layer, performing exposure / development, completely etching the substrate material in the vertical direction below the air bridge, and then removing the (n + 2) th photoresist layer to complete the air bridge manufacturing process. The problem of light resistance deformation caused by long-distance transconductance can be solved, and a long-span air bridge structure is achieved.

The invention belongs to the technical field of semiconductor manufacturing processes, and particularly relates to a method for improving metal step coverage of a device. Comprising the following steps: providing a wafer; a wafer is installed, the wafer is installed on a small target of the planetary plate, and the planetary plate is installed in equipment; by rotating the clamping angle of the wafer, the distribution direction of the metal strips in the device is changed, and metal step coverage is improved; the rotating angle of the rotating shaft ranges from 45 degrees to 135 degrees; preparing a metal film, namely preparing the metal film on the surface of the wafer by adopting a metal evaporation process; performing metal photoetching; metal corrosion; and inspection and measurement are carried out, a microscope is adopted for microscopic examination, an electron microscope is adopted for testing, the surface appearance and morphology of the wafer are subjected to microscopic examination, and the width of the metal strip is measured. According to the invention, the mounting angle of the wafer is changed, the direction of the metal step is changed, and the step morphology of the metal strip in the device is improved.

This application provides a method for fabricating a fast recovery diode, a fast recovery diode, and an electronic device, relating to the field of semiconductor technology. The method for fabricating a fast recovery diode includes: providing a substrate, the substrate including a first surface and a second surface disposed opposite to each other; performing ion doping treatment on the substrate to form ion-doped regions on the first surface and the second surface; etching the first surface based on a predetermined etching region to form a first groove; wherein the depth of the first groove is greater than the thickness of the ion-doped region; the predetermined etching region is located at the center of the first surface; forming a passivation layer in the first groove; and performing metal evaporation on the first surface to form a first metal layer. This method not only reduces the conduction loss of the fast recovery diode, improves energy conversion efficiency, effectively suppresses reverse current, and reduces electromagnetic interference, but also enhances its resistance to avalanche breakdown energy and surge capability.

The invention relates to a long-distance air bridge for preventing depression of a bridge floor and a preparation method thereof, and the method comprises the steps: enabling GaAs layers and InGaP layers to be alternately arranged for multiple times to form a first layer to an Nth layer, and enabling an Al < x > Ga < 1-x > As layer to be arranged below the Nth layer; depositing a first photoresist layer on the first layer, performing exposure / development, and etching the first layer to form a first mesa; etching the second layer and then removing the first photoresist layer; coating a second photoresist layer, performing exposure / development, etching the third layer to form a second mesa, and etching the fourth layer to remove the second photoresist layer; sequentially forming a third table-board to an a-th table-board according to the same operation; and coating an (a + 1) th photoresist layer on the outer side of the a-th table top, performing exposure / development, performing metal evaporation, removing metal and the (a + 1) th photoresist layer on the outer side of the a-th table top, and sequentially and completely etching the first layer and the Nth layer below the air bridge to complete the air bridge manufacturing process. According to the invention, a long-span air bridge structure is realized, and a window of an etching process is larger.

The invention discloses a method for preparing a 3 omega electrode of a surface conductive or rough sample, which comprises the following steps of: cleaning a sample to be detected, spin-coating liquid BCB resin and curing, tightly attaching a hollow mask plate to the sample to be detected so as to transfer a pattern on the mask plate to the sample to be detected, fixing the attached hollow mask plate to the sample to be detected, and carrying out surface conductive treatment on the sample to be detected, so as to obtain the 3 omega electrode of the surface conductive or rough sample. And putting the sample into a metal evaporation furnace to evaporate metal, and finally separating the sample to be detected from the hollow mask plate to complete the preparation of the 3 omega electrode. According to the scheme, the characteristic that the liquid BCB resin can be cured after spin coating is utilized, a flat insulating layer can be formed on the surface of a conductive or rough sample, the subsequently prepared 3 omega electrode can be used for testing, meanwhile, the hollow mask and the evaporation clamp system designed in the scheme can avoid using photoresist to photoetch the evaporation electrode, and the test efficiency is improved. The possible electrode falling condition is avoided, and the evaporated metal electrode and the sample can be connected more firmly in the mode that the metal is directly evaporated through the hollowed-out mask.

This invention relates to the field of gallium arsenide-based high-frequency device manufacturing technology, specifically a method and structure for fabricating a Y-shaped gate to reduce gate resistance. The method involves forming a first layer of negative photoresist with an inverted trapezoidal cross-section on a GaAs wafer, depositing a 30nm~80nm sacrificial passivation layer, coating a second layer of negative photoresist, and photolithographically etching out a window. A suspended region is formed through dry etching and O2 plasma etching, followed by metal evaporation and non-destructive lift-off to obtain the Y-shaped gate. This invention fundamentally eliminates the lift-off failure problem caused by the "top-heavy" effect, overcomes the process bottleneck of gate metal thickness, and achieves a significant increase in gold layer thickness, effectively reducing gate resistance. Furthermore, this invention provides a Y-shaped gate structure fabricated by this method, which has high bottom support strength and exhibits no process stress damage in its Schottky contact with the GaAs substrate, significantly improving the high-frequency performance and reliability of the device.

This invention relates to the field of vacuum coating technology and discloses a linear metal evaporation source for vacuum coating. The linear metal evaporation source of this invention includes a container, a nozzle, and a crucible. The container includes a metal outer cover and an inner liner, with heat-insulating material filling the space between the outer cover and the inner liner. The inner liner is a heater, and its cavity includes a primary evaporation zone, a pressurization zone, a secondary evaporation zone, and a heating zone. The nozzle has a slit-shaped nozzle orifice and is located at the top of the inner liner. The crucible is located within the primary evaporation zone. The linear metal evaporation source of this invention is placed within the vacuum chamber of a vacuum coating apparatus. The inner liner heats the metal to be coated in the primary evaporation zone, causing the metal to vaporize and reach saturated vapor pressure. The metal vapor is transported to the nozzle at saturated vapor pressure, and the nozzle ejects the metal vapor in a linear jet manner, depositing it on the workpiece to form a uniform and dense metal coating layer. This results in high coating efficiency and good film quality.

The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a GaN HEMT (High Electron Mobility Transistor) with a grid air bridge structure, which comprises the following steps of: 1, cleaning an epitaxial wafer, and defining ohmic contact areas of a source electrode and a drain electrode; carrying out metal evaporation, metal lift-off and annealing treatment on the epitaxial wafer to prepare a source electrode and a drain electrode; 2, depositing a first passivation layer on the epitaxial wafer on which the source electrode and the drain electrode are prepared, and performing isolation; step 3, etching a contact window on the isolated first passivation layer; 4, preparing a columnar light resistor on the first passivation layer to define an air bridge region; step 5, depositing a second passivation layer on the first passivation layer on which the columnar photoresist is prepared; step 6, etching the second passivation layer to expose the columnar photoresist and the contact window; 7, after etching is completed, grid metal is deposited; and step 8, removing metal except the gate metal and all light resistors. The parasitic capacitance of the device can be effectively reduced.

The application provides an experimental device for vacuum metal evaporation, and belongs to the technical field of metal evaporation experiments. The device specifically comprises a vacuum experiment box, a cavity structure for placing a metal to be heated, and a nozzle communicating with the vacuum experiment box arranged on the cavity structure. A support frame is installed in the vacuum experiment box, and a plurality of slit plates are slidably installed on the support frame. The slit plates are slidably arranged on the support frame to change the distance between the slit plates and the nozzle. Different metals condense on different slit plates when metal vapor passes through the plurality of slit plates. A collection plate is slidably installed on the support frame and located on the side of the slit plates away from the nozzle. The collection plate is slidably arranged on the support frame to change the distance between the collection plate and the nozzle. The metal vapor ejected from the nozzle is sequentially left on the collection plate after passing through a plurality of slit plates. Through the processing scheme, the same device can cope with metal evaporation experiments under different conditions by quickly adjusting the positions of various structures of the device.

The invention relates to a semi-arc air field plate structure of a GaN HEMT and a preparation method thereof. The preparation method comprises the following steps: defining an active region range of a high-frequency semiconductor device; defining patterns of a source electrode and a drain electrode of the device, performing metal evaporation on the source electrode and the drain electrode, and performing high-temperature tempering at the same time; defining a device gate pattern to form a Y-shaped gate; after a photoresist is deposited in the Gate region to cover the gate, the photoresist is baked and hardened to protect the Gate region, and then a dielectric layer is deposited above the device; defining a field plate pattern above the dielectric layer, etching the dielectric layer at the position where field plate metal needs to be deposited in a wet etching or dry etching mode, and directly depositing the field plate metal; the photoresist is removed after metal deposition, the photoresist which is originally protected above the grid electrode is removed together, and an air cavity structure formed by an arc-shaped field plate is formed at the position of the grid electrode of the device. Air is used as an ultra-low dielectric material, so that the parasitic capacitance of the device is remarkably reduced, the Miller effect is reduced, the high-frequency characteristic is improved, and the switching loss is reduced.

The application provides an indium column preparation method and an indium column and an infrared detector, and belongs to the technical field of infrared detectors. The method comprises the following steps: forming a mesa of each contact layer by using a conventional mesa manufacturing process, then performing photoetching, passivation and cleaning; growing ubm metal in the opening by using a metal evaporation process to form a ubm electrode, then stripping and cleaning; forming an indium column photoetching hole on each ubm electrode by using a photoetching process, growing an indium layer in the indium column photoetching hole, then stripping and cleaning; and performing a reflow process on the chip after cleaning, so that uniform indium column solder joints with the same upper surface level are obtained through the melting of the indium column and the surface tension effect after the reflow process. The application is applied to the preparation of indium columns of infrared detectors.

This disclosure relates to an evaporation unit (10) for evaporating a metal evaporation material, comprising: - an evaporation crucible (40) inside an evaporation chamber (50); - a melting crucible (20) located outside the evaporation chamber (50) and fluidly coupled to the evaporation crucible (40), the melting crucible (20) including a melting cavity (23) for melting the metal evaporation material, for housing the molten evaporation material (12), and / or for heating the molten evaporation material (12); and - a measuring arrangement (80) coupled to the melting crucible (20) and operable to quantitatively measure at least one of the filling level (28) of the molten evaporation material (12) in the melting cavity (23) and the mass of the molten evaporation material (12) in the melting crucible (20), the measuring unit (80) further operable to generate a measuring signal indicating at least one of the filling level (28) and mass of the molten evaporation material (12); The present invention relates to an evaporation unit (10) including a controller (90) connected to a measuring arrangement (80) and operable to derive a filling level (48) of molten evaporation material (12) inside an evaporation crucible (40) based on a measurement signal received from the measuring arrangement (80).

The invention relates to a gate manufacturing method for preventing light resistance from warping, which comprises the following steps of: coating first light resistance layers on source metal and drain metal, defining the etching width of a cap layer by adopting an overlay process, and etching a channel on a substrate by adopting wet etching; removing the first photoresist layer, coating a second photoresist layer and developing; s3, patterning the second photoresist layer to form a Y gate bottom; coating a third photoresist layer on the second photoresist layer and developing, wherein the third photoresist layer is a negative photoresist; performing gate metal evaporation; and removing the third photoresist layer and redundant metal by using an NMP solution. According to the invention, cracks after metal evaporation caused by upwarp of the photoresist after etching can be avoided, the upwarp of the photoresist is improved, the line width precision is improved, and the quality yield is improved.

The present disclosure relates to an improved thermo-metallurgical low carbon method and system for selective separation and recovery of metals and metal oxides from industrial minerals and waste materials (Processed materials) containing zinc, lead, cadmium, arsenic, iron, mercury and selenium using air sealed indirectly heated modular furnace, with counter-current nitrogen atmosphere. Carbon and / or hydrogen reductant is used to strip oxygen from industrial byproduct and recover metals in form of metal oxide concentrate and residual concentrated iron pellets (CIP). The system is accelerated with Microwave-Assisted Reduction of Processed materials with accelerating pre-heating / activation / metal evaporation in controlled reducing environment by using gas mixture containing hydrogen.

The utility model relates to the technical field of LED (light-emitting diode) manufacturing process, in particular to an accompanying chip structure, which comprises a substrate and an oxide layer, the oxide layer is formed on the substrate by evaporation, and the thickness of the oxide layer is not less than 450 angstroms. The oxide layer is evaporated on the substrate, so that the oxide layer can be used as a transition layer, and subsequent evaporated metal is prevented from being in direct contact with the substrate; meanwhile, the surface of the oxide layer has hydrophilicity, so that metal atoms can be effectively adsorbed, and the adhesion between the substrate and metal is further enhanced; besides, the oxide layer also enables the roughness of the surface of the substrate to be increased, metal atoms can be slightly diffused on the surface of the oxide layer to form a mechanical interlocking structure, the adhesion of the metal on the substrate is further improved, and the situation that the metal evaporation thickness cannot be monitored due to the fact that the evaporated metal falls off from an accompanying piece is avoided.

The present application relates to a kind of ultrahigh pressure mercury lamp anode phase change cooling metal silver injection adaptive control method, the present application proposes the real-time synchronous acquisition and space-time registration of the multi-source data of fusion three-dimensional distributed micro-thermoelectric pile, optical positioning and laser spectrum, solve millisecond temperature gradient, arc root displacement and metal evaporation fluxes such as physical field parameters;The present application realizes electrode multidimensional state evolution path identification and clustering by constructing three-dimensional state fingerprint space and physical guide map neural network;Based on state stability characteristic function and dynamic threshold adjustment, generate adaptive silver injection timing window, and utilize the on-line iterative optimization of model parameters to the change of feature after injection.The present application improves the accurate description of the evolution process of multiple physical quantities and the responsiveness of injection control, effectively prolongs the service life and operating stability of electrode.

The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a GaN HEMT with an air dielectric layer and a composite passivation layer structure, and the method comprises the following steps: 1, cleaning an epitaxial wafer, and defining ohmic contact regions of a source electrode and a drain electrode; carrying out metal evaporation, metal lift-off and annealing treatment on the epitaxial wafer to prepare a source electrode and a drain electrode; 2, depositing a first passivation layer on the epitaxial wafer on which the source electrode and the drain electrode are prepared, and performing isolation; step 3, etching two lower layer cavities on the isolated first passivation layer; step 4, preparing two columnar light resistors on the two lower layer cavities; and step 5, depositing a second passivation layer on the first passivation layer of the two prepared columnar photoresistors. The air dielectric layer is introduced between the composite passivation layers on the two sides of the grid electrode. As the air medium has a very low dielectric constant, parasitic capacitance between the gate electrode and the source electrode and between the gate electrode and the drain electrode of the device can be effectively reduced.

This invention discloses a metal evaporator and condenser, relating to the field of metal evaporation and condensation technology. It includes a support base, on which a condenser base is mounted. The condenser base has an insulated outer cylinder and an insulated inner cylinder. An evaporation crucible is located inside the insulated inner cylinder. A support plate is located at the upper end of the evaporation crucible. A first guide plate is located at the upper end of the support plate. A first lower guide hole is located between the lower end of the first guide plate and the support plate. A support seat is mounted at the upper end of the insulated outer cylinder. Multiple first upper guide holes are located between the upper sidewall of the first guide plate and the support seat. A second guide plate with second guide holes is located at the upper middle part of the support seat. A third guide plate with third guide holes is located at the upper end of the second guide plate. A fourth guide plate with multiple fourth guide holes is located at the upper end of the third guide plate. A sealing cap is fitted over the upper end of the support seat. The steam condensation path in this invention is relatively long, thereby improving the metal separation effect.