CH3NH3PbI3 thin-film solar cell preparation method

Abstract

The invention relates to a preparation method for a CH3NH3PbI3 thin film and a solar cell thereof, which belongs to the field of novel material device manufacturing techniques. The CH3NH3PbI3 thin film preparation method comprises the steps that a CH3NH3PbI3 solution based (CH3COO)<2>Pb is used as a single evaporation source, a metal evaporation boat is heated rapidly to a temperature above 1000 DEG C in less than 1 second, and the CH3NH3PbI3 thin film with accurate components can be prepared. The CH3NH3PbI3 thin film prepared by adopting the single source reaction flash vaporization method has the advantages of fast reaction rate, fast evaporation rate, cavity-free property and long service life, and is suitable for manufacturing planar devices. Further, a p-i-n type planar solar cell deice is composed of TiO2 or ZnO which is adopted as n-type materials, Spiro-OMeTAD which is adopted as p-type materials and the i-type CH3NH3PbI3 thin film, and the device with the efficiency of 8.85% can be obtained after optimizing the preparation conditions.

Description

technical field [0001] The invention relates to a preparation method of a solar device, in particular to a CH 3 NH 3 PB 3 The invention discloses a method for preparing a thin-film solar cell made of materials, and belongs to the field of new material device manufacturing technology. Background technique [0002] In today's world, with the dwindling of earth resources and the increasing demand for energy, the energy crisis is imminent. In order to survive and develop, human beings must seek renewable clean new energy sources that can replace conventional energy sources, and one of the options is solar power generation. Solar energy has the advantages of huge storage, inexhaustibility, cleanness and pollution-free, and no geographical restrictions. It is the most important new energy source for human beings. [0003] At present, solar cells mainly include crystalline silicon cells and thin-film solar cells, among which thin-film solar cells have become the development tre...

AI Technical Summary

Problems solved by technology

For example, Henry Snaith can prepare thin films without voids and small grains by using the dual-source method, but the control of the dual-source method is complicated, and two independent evaporation sources need to be able to work stably at a rate of a certain ratio

In addition, in order to achieve high-quality thin films, the evaporation rate is very slow, and generally needs to be controlled within 0.5 angstroms per second

Such a low rate is not suitable for mass production

The current physical growth methods with higher growth rates are all based on PbI 2 of CH 3 NH 3 I and PbI 2 The chemical reaction process is slow, which will lead to CH in the process of high-speed evaporation 3 NH 3 I and PbI 2 The reaction process lags far behind the process of heating and evaporation, so that the prepared CH 3 NH 3 PB 3 The conversion efficiency and life of the battery are low due to the presence of impurities in the thin film

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