This invention discloses a
boron-doped
vanadium diboride-based multiphase
ceramic and its high-pressure, high-temperature preparation method. The
ceramic consists of
vanadium diboride and a
boron-doped phase, with a
boron doping amount of 15–50 vol%, preferably 50 vol%. The preparation method involves weighing VB2
powder and boron
powder according to a specified ratio, ball-milling them together, pressing them into a blank, and then
sintering under
high pressure and high temperature (1000–2000℃) for 60–180 minutes. This invention, through the synergistic effect of controllable excess
boron doping and high-pressure, high-temperature
sintering, allows excess boron to form a nanoscale second phase in situ at the VB2 grain boundaries, inducing high-angle, multi-level crack deflection and promoting grain pull-out, thus significantly improving
fracture toughness while maintaining high
hardness. The obtained 50 vol% boron-doped multiphase
ceramic exhibits a Vickers
hardness of 21.27 ± 1.11 GPa and a
fracture toughness of 9.41 ± 0.58 MPa·m. 1 / 2 This method achieves approximately 135% improvement in
hardness and
toughness compared to pure VB2 ceramics, realizing a synergistic enhancement of both. The process is simple, requires no additional
sintering aids, and is suitable for preparing high-strength, high-
toughness ultra-high temperature ceramic components.