7460 results about "Yttrium" patented technology

Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm³, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

The invention relates to a light source (1), having at least one LED (2) for emitting a primary radiation (4) and at least one luminescence conversion body (3) having at least one luminescent material for converting the primary radiation (4) into a secondary radiation (5). The luminescence conversion body is a polycrystalline ceramic body. The LED is based on GaInN and emits blue primary radiation. The ceramic body comprises for example a luminescent material based on a cerium-doped yttrium aluminum garnet. This luminescent material emits yellow secondary radiation. Blue primary radiation and yellow secondary radiation penetrate through the luminescence conversion body and are perceived as white light by the observer. In order to produce the luminescence conversion body, provision is made of a polycrystalline ceramic body which is united with a solution of a dopant. By means of a thermal treatment, the dopant (activator) diffuses into the ceramic body, the luminescent material being formed.

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxides formed from elements such as yttrium and gadolinium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl₃ or Cl₂ is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y₂O₃.5Al₂O₃, 2Y₂O₃.Al₂O₃, Y₂O₃.Al₂O₃ or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 μm or less in center line average roughness Ra is utilized.

Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

The invention concerns an endoprosthesis comprising a carrier structure which contains a metallic material wherein the metallic material contains a magnesium alloy of the following composition: magnesium: >90%, yttrium: 3.7%-5.5%, rare earths: 1.5%-4.4% and balance: <1%.

A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner surface of the chamber. The ceramic layer may include yttrium oxyfluoride (Y_xO_yF_z), where x=1, y=1, 2, and z=1, 2.

A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a specular layer, a barrier layer, and a capping layer. The spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the specular layer and the nonmagnetic spacer layer. The specular layer is adjacent to the free layer and includes at least one of titanium oxide, yttrium oxide, hafnium oxide, magnesium oxide, aluminum oxide, nickel oxide, iron oxide, zirconium oxide, niobium oxide, and tantalum oxide. The barrier layer resides between the specular layer and the capping layer. The barrier layer is nonmagnetic and includes a first material. The capping layer includes a second material different from the first material.

Polymer nanocomposite implants with nanofillers and additives are described. The nanofillers described can be any composition with the preferred composition being those composing barium, bismuth, cerium, dysprosium, europium, gadolinium, hafnium, indium, lanthanum, neodymium, niobium, praseodymium, strontium, tantalum, tin, tungsten, ytterbium, yttrium, zinc, and zirconium. The additives can be of any composition with the preferred form being inorganic nanopowders comprising aluminum, calcium, gallium, iron, lithium, magnesium, silicon, sodium, strontium, titanium. Such nanocomposites are particularly useful as materials for biological use in applications such as drug delivery, biomed devices, bone or dental implants.

A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe₁₆N₂ phase as a primary phase and an outer layer containing yttrium (Y) and aluminum (Al), in which an average particle size r of the iron nitride magnetic powder is 20 nm or less, an average diameter d of the core is 4 to 10 nm, and a ratio of r to d (r/d) is 2 to 3, and average content of yttrium and aluminum in the outer layer are from 0.9 to 5 atomic % and from 30 to 50 atomic %, respectively, each based on the total number of iron atoms in the iron nitride magnetic powder, and standard deviations of the contents of yttrium and aluminum are 0.6 atomic % or less and 17 atomic % or less, respectively.

An endoprosthesis, in particular an intraluminal endoprosthesis such as a stent, comprises a carrier structure, which includes at least one component comprising a magnesium alloy of the following composition: Magnesium: between about 60.0 and about 88.0% by weight Rare earth metals: between about 2.0 and about 30.0% by weight Yttrium: between about 2.0% and about 20.0% by weight Zirconium: between about 0.5% and about 5.0% by weight Balance: between 0 and about 10.0% by weight wherein the alloy components add up to 100% by weight.

A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

High temperature aluminum alloys that can be used at temperatures from about −420° F. (−251° C.) up to about 650° F. (343° C.) are described herein. These alloys comprise aluminum; scandium; at least one of nickel, iron, chromium, manganese and cobalt; and at least one of zirconium, gadolinium, hafnium, yttrium, niobium and vanadiuim. These alloys comprise an aluminum solid solution matrix and a mixture of various dispersoids. These alloys are substantially free of magnesium.

An endoprosthesis, in particular an intraluminal endoprosthesis such as a stent, comprises a carrier structure, which includes at least one component comprising a magnesium alloy of the following composition: Rare earth metals: between about 2.0 and about 5.0% by weight, with neodymium between about 1.5 and about 3.0% by weight Yttrium: between about 3.5% and about 4.5% by weight Zirconium: between about 0.3% and about 1.0% by weight Balance: between 0 and about 0.5% by weight wherein magnesium occupies the proportion by weight that remains to 100% by weight in the alloy.

An illumination apparatus having adjustable color temperature and a method for adjusting the color temperature. The apparatus and the method can adjust the color temperature for different purposes. The illumination apparatus comprises: a blue-light source; a transparent filter lens set on the top of the blue-light source; a fluorescence layer of cerium-doped yttrium aluminum garnet (YAG) phosphor is spread onto the transparent filter lens. Replacing the yttrium and the aluminum in the cerium-doped yttrium aluminum garnet phosphor with gadolinium (Gd) and gallium (Ga) respectively can produce yellow lights of different wavelengths. Different yellow lights can then be mixed with the blue light to produce white lights of different color temperature.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

A nitrogen oxide storage material is disclosed which contains at least one storage component for nitrogen oxides in the form of an oxide, mixed oxide, carbonate or hydroxide of the alkaline earth metals magnesium, calcium, strontium and barium and the alkali metals potassium and caesium on a high surface area support material. The support material can be doped cerium oxide, cerium/zirconium mixed oxide, calcium titanate, strontium titanate, barium titanate, barium stannate, barium zirconate, magnesium oxide, lanthanum oxide, praseodymium oxide, samarium oxide, neodymium oxide, yttrium oxide, zirconium silicate, yttrium barium cuprate, lead titanate, tin titanate, bismuth titanate, lanthanum cobaltate, lanthanum manganate and barium cuprate or mixtures thereof.