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208 results about "YTTERBIUM OXIDE" patented technology

Ytterbium(III) oxide is the chemical compound with the formula Yb2O3. It is one of the more commonly encountered compounds of ytterbium.

Blade tip coating processes

This invention relates to processes for coating blades for a gas turbine engine, said blades having an inner end adapted for mounting on a hub and a blade tip located opposite the inner end, and wherein at least a portion of the blade tip is coated with a thermally sprayed coating of a high purity yttria or ytterbia stabilized zirconia powder, said thermally sprayed coating having a density greater than 88% of the theoretical density with a plurality of vertical macrocracks substantially homogeneously dispersed throughout the coating in which a cross-sectional area of the coating normal to the blade tip exposes a plurality of vertical macrocracks extending at least half the coating thickness in length up to the full thickness of the coating and having from about 5 to about 200 vertical macrocracks per linear inch measured in a line parallel to the surface of the blade tip and in a plane perpendicular to the surface of the blade tip, and said high purity yttria or ytterbia stabilized zirconia powder comprising from about 0 to about 0.15 weight percent impurity oxides, from about 0 to about 2 weight percent hafnium oxide (hafnia), from about 6 to about 25 weight percent yttrium oxide (yttria) or from about 10 to about 36 weight percent ytterbium oxide (ytterbia), and the balance zirconium oxide (zirconia).
Owner:PRAXAIR ST TECH INC

Method for preparation of low carbon alcohol by hydrogenolysis of sugar and sugar alcohol

The invention relates to a method for preparation of low carbon alcohol by hydrogenolysis of sugar and sugar alcohol. The method adopts sugar and sugar alcohol as the raw materials, takes one or more than two of iron, cobalt, nickel, copper, zinc, tin, platinum, ruthenium, palladium, iridium and other transition metals as the catalyst active component, and employs a rare earth oxide like promethium oxide, gadolinium oxide, terbium oxide, holmium oxide, erbium oxide, thulium oxide, cerium oxide, lanthanum oxide, praseodymium oxide, neodymium oxide, scandium oxide, yttrium oxide, dysprosium oxide, europium oxide, samarium oxide, ytterbium oxide, lutecium oxide and the like as the assistant. Under a temperature of 150-320DEG C and an H2 pressure of 1-20MPa, catalytic hydrocracking is carried out in a water solution to obtain ethylene glycol, propylene glycol, glycerol and other low carbon alcohols. The method provided by the invention has the advantages that: the rare earth oxide is added as the assistant to realize hydrocracking of sugar and sugar alcohol, rare earth oxides are insoluble in water and easy to separate, and at the end of reaction, the reaction system has no need for additional acid to neutralize.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI

Holmium/ytterbium-codoped bisumth tungstate fluorescent powder and preparation method thereof

The invention discloses a holmium/ytterbium-codoped bisumth tungstate fluorescent powder and a preparation method thereof. The preparation method comprises the following steps: by using bismuth nitrate pentahydrate, sodium tungstate, holmium oxide and ytterbium oxide as raw materials and ethanediol and dilute nitric acid as solvents, mixing the solution according to the stoichiometric proportion of Bi(2-x-y)HoxYbyWO6 (0<=x<2, and 0<=y<2) to form a uniform suspension, carrying out high-temperature reaction in a hydrothermal reaction kettle, centrifugating, washing, drying, and carrying out heat treatment to obtain the holmium/ytterbium-codoped bisumth tungstate fluorescent powder. The mixing ratio and the technological parameters for hydrothermal treatment, heat treatment and the like are controlled in the preparation process to obtain the powder with different fluorescence intensity levels. The preparation method has the advantages of simple technique and procedure, wide parameter adjustable range, high repeatability and low cost, and has commercial prospects. The fluorescent powder has important application values in the fields of ceramic raw powder, visible-light photocatalysis, solar cells and photoelectric sensors.
Owner:DALIAN POLYTECHNIC UNIVERSITY

Ytterbium and thulium codoped dodecacalcium heptaluminate polycrystal and preparation method thereof

The invention discloses an ytterbium and thulium codoped dodecacalcium heptaluminate polycrystal and a preparation method thereof, relating to dodecacalcium heptaluminate polycrystal and a preparation method thereof, and solving the technical problem that the conventional blue material does not contribute to application due to wide blue wavelength distribution. The ytterbium and thulium codoped dodecacalcium heptaluminate polycrystal is prepared from calcium oxide, aluminum oxide, ytterbium oxide and thulium oxide, wherein the molar ratio of the calcium oxide to the aluminum oxide is 12:7; the amount of substance of the ytterbium oxide is 0.042-0.42 percent of that of the calcium oxide; and the amount of substance of the thulium oxide is 0.042-0.21 percent of that of the calcium oxide. The method comprises the following steps of: grinding the calcium oxide, the aluminum oxide, the ytterbium oxide and the thulium oxide powder; sheeting; and sintering under an air atmosphere to obtain the ytterbium and thulium codoped dodecacalcium heptaluminate polycrystal. Single blue light emission with wavelength of 460-490nm is obtained under excitation of light with wavelength of 980nm. The polycrystal can be used in the fields of light storage technology, optoelectronic technology, sensor technology and submarine optical cable communication.
Owner:HARBIN INST OF TECH

Silicon carbide refractory material and preparation method thereof

The invention belongs to the technical field of refractory materials, and provides a silicon carbide refractory material and a preparation method thereof. The silicon carbide refractory material comprises, by weight, 25-40 parts of silicon carbide powder, 4-8 parts of silica fume , 1-5 parts of aluminum powder, 5-13 parts of titanium dioxide, 5-10 parts of zirconium oxide, 0.5-3 parts of polyhedral oligomeric silsesquioxane, 0.5-2 parts of molybdenum carbide, 0.5-2 parts of silicon boride, 0.5-1.5 parts of erbium acetate, 0.5-1.5 parts of ytterbium oxide, 1-3 parts of diamond and 3-5 parts ofbinding agent. The preparation method comprises the following steps: mixing the silicon carbide powder, the silica fume, the aluminum powder, the titanium dioxide and the zirconium oxide, grinding themixture to obtain first mixed powder, reacting the erbium acetate, the ytterbium oxide and the diamond to obtain second mixed powder, mixing the first mixed powder with the second mixed powder, mixing the obtained mixture with other components in the formula, and firing the obtained mixture to obtain the silicon carbide refractory material. By means of the technical scheme, the problems that in the prior art, a refractory material is poor in oxidation resistance and not high in strength are solved.
Owner:唐山市瑞兆碳化硅制品有限公司

Thin film transistor, display panel, and manufacturing method of thin film transistor

The embodiment of the invention discloses a thin film transistor, a display panel and a manufacturing method of the thin film transistor. The thin film transistor comprises an active layer arranged onthe surface of a glass substrate, and a source electrode and a drain electrode are connected with the active layer. A first insulating layer disposed on a side of the active layer remote from the glass substrate; A gate layer disposed on a side of the first insulating layer remote from the glass substrate; The second insulating layer covers the source electrode, the drain electrode and the gate electrode layer, and the second insulating layer is provided with a through hole, and the through hole exposes the source electrode and the drain electrode; The active layer is made of (MO) x (RO) y (TO) z, where 0 (x (1, 0001 <=y <= 0. 20, 0.0001 <=z <= 0. 20, x+y+z=1; MO is a metal oxide, and M comprises at least one of In, Zn and Ga; RO is a rare earth oxide, and RO comprises at least one of praseodymium oxide, terbium oxide, dysprosium oxide and ytterbium oxide; TO is a transition metal oxide, and TO comprises at least one of vanadium oxide, niobium oxide and tantalum oxide. Embodiments ofthe present invention provide a low cost top gate structure metal oxide thin film transistor.
Owner:深圳庸行科技有限公司
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