Silicon carbide refractory material and preparation method thereof

A technology of refractory materials and silicon carbide, which is applied in the field of refractory materials, can solve the problems of low strength and poor oxidation resistance, and achieve the effects of strong oxidation resistance, small thermal conductivity and increased thermal conductivity

Active Publication Date: 2019-11-22
唐山市瑞兆碳化硅制品有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention proposes a silicon carbide refractory material and its preparation method, which solves the problems of poor oxidation resistance and low strength of refractory materials in the prior art

Method used

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  • Silicon carbide refractory material and preparation method thereof
  • Silicon carbide refractory material and preparation method thereof
  • Silicon carbide refractory material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A silicon carbide refractory material, comprising the following components by weight:

[0038] 25 parts of silicon carbide powder, 4 parts of silicon powder, 1 part of aluminum powder, 5 parts of titanium dioxide, 5 parts of zirconia, 0.5 part of cage polysilsesquioxane, 0.5 part of molybdenum carbide, 0.5 part of silicon boride, erbium acetate 0.5 parts, 0.5 parts of ytterbium oxide, 1 part of diamond, 3 parts of binder;

[0039] Among them, the particle size of silicon carbide powder is 20-40 μm, the particle size of diamond is 10-20 μm, and the cage polysilsesquioxane is aminopropyl isobutyl silsesquioxane;

[0040] The binder is composed of the following components in parts by weight: 3 parts of poloxamer, 2 parts of chitosan, 0.5 part of sodium tripolyphosphate, and 20 parts of water. The preparation method is to first add poloxamer to water, dissolve Add chitosan and sodium tripolyphosphate, and mix well to obtain a binder;

[0041] Its preparation method compri...

Embodiment 2

[0051] A silicon carbide refractory material, comprising the following components by weight:

[0052] 40 parts of silicon carbide powder, 8 parts of silicon powder, 5 parts of aluminum powder, 13 parts of titanium dioxide, 10 parts of zirconia, 3 parts of cage polysilsesquioxane, 2 parts of molybdenum carbide, 2 parts of silicon boride, erbium acetate 1.5 parts, 1.5 parts of ytterbium oxide, 3 parts of diamond, 5 parts of binder;

[0053] Among them, the particle size of silicon carbide powder is 20-40 μm, the particle size of diamond is 10-20 μm, and the cage polysilsesquioxane is aminopropyl isobutyl silsesquioxane;

[0054] The binder is composed of the following components in parts by weight: 7 parts of poloxamer, 5 parts of chitosan, 2 parts of sodium tripolyphosphate, and 30 parts of water. The preparation method is to first add poloxamer to water, dissolve Add chitosan and sodium tripolyphosphate, and mix well to obtain a binder;

[0055] Its preparation method is wit...

Embodiment 3

[0057] A silicon carbide refractory material, comprising the following components by weight:

[0058] 30 parts of silicon carbide powder, 5 parts of silicon powder, 2 parts of aluminum powder, 8 parts of titanium dioxide, 6 parts of zirconia, 1 part of cage polysilsesquioxane, 1 part of molybdenum carbide, 1 part of silicon boride, erbium acetate 0.8 parts, 0.8 parts of ytterbium oxide, 1.5 parts of diamond, 3.5 parts of binder;

[0059] Among them, the particle size of silicon carbide powder is 20-40 μm, the particle size of diamond is 10-20 μm, and the cage polysilsesquioxane is aminopropyl isobutyl silsesquioxane;

[0060] The binding agent is composed of the following components by weight: 4 parts of poloxamer, 3 parts of chitosan, 1 part of sodium tripolyphosphate, and 25 parts of water. The preparation method is to first add poloxamer to water, dissolve Add chitosan and sodium tripolyphosphate, and mix well to obtain a binder;

[0061] Its preparation method is with em...

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Abstract

The invention belongs to the technical field of refractory materials, and provides a silicon carbide refractory material and a preparation method thereof. The silicon carbide refractory material comprises, by weight, 25-40 parts of silicon carbide powder, 4-8 parts of silica fume , 1-5 parts of aluminum powder, 5-13 parts of titanium dioxide, 5-10 parts of zirconium oxide, 0.5-3 parts of polyhedral oligomeric silsesquioxane, 0.5-2 parts of molybdenum carbide, 0.5-2 parts of silicon boride, 0.5-1.5 parts of erbium acetate, 0.5-1.5 parts of ytterbium oxide, 1-3 parts of diamond and 3-5 parts ofbinding agent. The preparation method comprises the following steps: mixing the silicon carbide powder, the silica fume, the aluminum powder, the titanium dioxide and the zirconium oxide, grinding themixture to obtain first mixed powder, reacting the erbium acetate, the ytterbium oxide and the diamond to obtain second mixed powder, mixing the first mixed powder with the second mixed powder, mixing the obtained mixture with other components in the formula, and firing the obtained mixture to obtain the silicon carbide refractory material. By means of the technical scheme, the problems that in the prior art, a refractory material is poor in oxidation resistance and not high in strength are solved.

Description

technical field [0001] The invention belongs to the technical field of refractory materials, and relates to a silicon carbide refractory material and a preparation method thereof. Background technique [0002] With the rapid development of non-ferrous smelting technology and chemical industry in recent years, my country has successively built large-scale modern non-ferrous metal smelting kilns and large-scale chemical production bases, which also put forward strict requirements for refractory materials used in smelting kilns and chemical production. Since the high-temperature material will be in direct contact with the refractory material used as the lining, there are high requirements for the high temperature resistance, erosion resistance and thermal shock resistance of the refractory material. Because graphite can quickly conduct heat when the ambient temperature changes suddenly, reduce the internal temperature gradient of the material, reduce thermal stress, and protect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/63C04B35/634C04B35/636C04B35/66
CPCC04B35/66C04B35/565C04B35/63488C04B35/636C04B35/6313C04B2235/402C04B2235/428C04B2235/3232C04B2235/3244C04B2235/483C04B2235/3839C04B2235/3804C04B2235/3224C04B2235/427
Inventor 孙瑞臣
Owner 唐山市瑞兆碳化硅制品有限公司
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