The invention provides a
semiconductor structure and a method for monitoring an
ion implantation state, the
semiconductor structure comprises a substrate, and an
oxide layer and a
polycrystalline silicon layer which are sequentially formed on the substrate, high-
dose doped ions are implanted into the
polycrystalline silicon layer, covalent bonds can be formed between the doped ions and the
polycrystalline silicon layer after the doped ions are implanted, and the doped ions are doped into the polycrystalline
silicon layer. After the target ions are injected into the polycrystalline
silicon layer, the covalent bonds between the doped ions and the polycrystalline
silicon are destroyed, so that the
ion injection state of the target ions can be monitored through resistance detection. Besides, the
oxide layer is used as an
ion barrier layer, the implanted ions cannot diffuse into the substrate, after the current ion state monitoring is completed, the
oxide layer and the polycrystalline silicon layer on the substrate are removed, the oxide layer and the polycrystalline silicon layer are grown again, and high-
dose doped ions are implanted into the polycrystalline silicon layer, so that the next
ion implantation state monitoring can be realized, and the
ion implantation efficiency is improved. Therefore, by adopting the method for monitoring the
ion implantation state provided by the invention, the substrate can be reused.