The invention relates to the field of anti-radiation integrated circuit design in microelectronics, and provides an anti-radiation hardening latch based on TMR and a DICE. In order to achieve protection of SEU of internal data, according to the technical scheme, the anti-radiation hardening latch based on the TMR and the DICE is characterized in that an input satge is composed of four voting modules 1, 2, 3 and 4, the voting module 1 and the voting module 3 receive in-phase input signals, the voting module 2 and the voting module 4 receive anti-phase input signals, N-type transistors M1, M2, M3 and M4 are controlled by a clock signal CK, the voting modules 1, 2, 3 and 4 achieve voting on selecting one from the front-stage input signals A, B and C and the anti-phase signals of the front-stage input signals A, B and C, the communication condition of the voting module 1 is the same as that of the voting module 3, the communication condition of the voting module 2 is the same as that of the voting module 4, and the communication condition of the voting module 1 is opposite to that of the voting module 2. The anti-radiation hardening latch based on the TMR and the DICE is mainly applied to the anti-radiation integrated circuit design.