Manufacturing method of luminescent device, luminescent device, and display device

A manufacturing method and a technology of light-emitting devices, which are applied in the field of quantum dot light-emitting, can solve the problems that light-emitting devices are difficult to prepare multi-layer quantum dot films, and achieve high practical value

Inactive Publication Date: 2017-11-24
BOE TECH GRP CO LTD
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that it is difficult to prepare multi-layer quantum dot films in the manufacturing method of existing light-emitting devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of luminescent device, luminescent device, and display device
  • Manufacturing method of luminescent device, luminescent device, and display device
  • Manufacturing method of luminescent device, luminescent device, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0042] The invention provides a solution to the problem that it is difficult to prepare multi-layer quantum dot thin films in the existing manufacturing methods of light-emitting devices.

[0043] On the one hand, an embodiment of the present invention provides a method for manufacturing a light-emitting device, including: forming an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and an electrode on a substrate.

[0044] Among them, different from the prior art, the step of forming the light-emitting layer in this embodiment includes:

[0045] A variety of different quantum dot solutions are sequentially deposited on the substrate to form a stack of multiple layers of differe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
luminanceaaaaaaaaaa
thicknessaaaaaaaaaa
luminanceaaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method of a luminescent device, a luminescent device, and a display device. The manufacturing method of the luminescent device includes a step of forming a luminescent layer on a substrate, including: depositing a plurality of different quantum dot solutions on the substrate successively to form a plurality of layers of different quantum dot films in a stacked manner, and forming a luminescent layer through by the plurality of layers of different quantum dot films together, wherein any adjacent deposited two quantum dot solutions include the first quantum dot solution and the second quantum dot solution; the first quantum dot material as the solute in the first quantum dot solution is not dissolved in the solvent of the second quantum dot solution; and the second quantum dot material as the solute in the second quantum dot solution is not dissolved in the solvent of the first quantum dot solution. The scheme of the manufacturing method of a luminescent device can continuously prepare a plurality of layers of quantum dot films with relatively higher homogeneity to enable the luminescent device of the plurality of layers of quantum dot films to give out light normally.

Description

technical field [0001] The invention relates to the field of quantum dot light emission, in particular to a method for manufacturing a light emitting device, a light emitting device, and a display device. Background technique [0002] Quantum dot light-emitting diodes have the advantages of high stability, solution processing, adjustable emission wavelength, and low energy consumption. They have great application potential in new energy applications, high color gamut thin film displays, infrared communications, and solid-state lighting. [0003] Since the first appearance of quantum dot light-emitting diodes in 1994, people have conducted in-depth research on the synthesis of quantum dot materials, the structural design of electroluminescent devices, the optimization of device manufacturing processes, and the integration and application of electroluminescent devices. The development of quantum dot electroluminescent devices Luminous brightness, efficiency, stability and work...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/26G09G3/32
CPCH01L33/26G09G3/32H01L33/005H01L33/04
Inventor 钟海政韩登宝张欣汤加仑
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products