97 results about "Radiation hardening" patented technology

The invention discloses an anti-radiation hardening digital controlled oscillator, a clock data recovery circuit and equipment, and the digital controlled oscillator is characterized in that an anti-radiation hardening circuit unit is connected between a digital-to-analog converter (DAC) and a voltage-controlled oscillator (VCO), and comprises a voltage copying unit and a multiplexer; the voltage copying unit is used for copying a control voltage signal output by the digital-to-analog converter DAC, generating a copying voltage signal, sending the copying voltage signal to the multiplexer, and switching the output of the multiplexer from the control voltage signal to the copying voltage signal when the digital-to-analog converter DAC is subjected to single-particle bombardment. The DCO type clock data recovery circuit aims at solving the problem that a traditional DCO type clock data recovery circuit is prone to being affected by single particles when running in a radiation environment, single particle function interruption is generated, and consequently a space task fails, and the radiation hardening capacity of the DCO type clock data recovery circuit running in the radiation environment is improved.

The invention discloses a system and a method for testing and analyzing the single event effect of a high-capacity nonvolatile memory. The system comprises an upper computer module, an FPGA (Field Programmable Gate Array) control module and a programmable power supply module. The system is used for testing and analyzing various single event effects of a high-capacity nonvolatile memory chip in a dynamic working mode. And according to the error data read from the memory in the dynamic working mode, presetting error bitmap rules of various single-particle function interruptions in an FPGA test program, carrying out real-time analysis and identification on the various single-particle function interruptions, and discriminating single-particle upset of the memory unit. According to the system, testing and real-time analysis of various complex single event effects of the high-capacity nonvolatile memory can be achieved, then radiation hardening and evaluation can be conducted on the sensitive position of a memory chip, and high pertinence is achieved.

Vertical semiconductor devices with deep wells and associated fabrication methods are disclosed herein. A disclosed process for forming a semiconductor device includes forming, on a drift region having a first conductivity type, a deep well region for the semiconductor device. The deep well region can be formed by an implant. The deep well region has a second conductivity type. The deep well region of the second conductivity type leaves a portion of the surface of the drift region exposed. The process also includes epitaxially forming a semiconductor region that extends from the surface of the drift region to above the deep well region for the semiconductor device. The semiconductor region can be used as at least a part of the main operational current path of the semiconductor device when the semiconductor device is finished and is devoid of implant damage from the implant.

The invention discloses a nuclear power plant bolt installation method and system based on augmented reality, and belongs to the field of bolt intelligent installation, and the method comprises the steps: collecting nuclear power plant environment data based on an environment monitoring sensor, and obtaining environment adaptation parameters through anti-radiation reinforcement processing; generating an installation guidance sequence containing specifications and torque values based on the environment adaptation parameters and the bolt identification result; bolt image features in the installation guidance sequence are analyzed through an image processing algorithm, position and angle deviation indexes are extracted, and deviation calibration data are obtained; collecting a fastening torque signal based on a torque measurement sensor, and fusing the fastening torque signal and the deviation calibration data to obtain a torque deviation correction value; updating calibration parameters based on the torque deviation correction value, obtaining the corrected mounting position and angle, and determining the accuracy of the bolt in-position state; bolt surface defects and fastening degree characteristics are extracted through image analysis, and a bolt installation quality evaluation result is generated.

The invention provides an SRAM (Static Random Access Memory) storage unit anti-single particle radiation reinforcement method and system, and relates to the technical field of microelectronics and circuit structure design, a redundant node coupled with a main storage node of an SRAM storage unit is constructed, and the redundant node is used for redundant storage of the logic state of the main storage node; the polarity of a main storage node is reinforced by configuring the main storage node into a circuit structure fully surrounded by a single-type transistor; wherein the redundant node and the main storage node after polarity reinforcement are integrated into a reinforced SRAM (Static Random Access Memory) storage unit. According to the method, circuit-level fusion and collaborative design are carried out on redundancy reinforcement and polarity reinforcement, so that the single event upset resistance of the SRAM unit is improved, and an efficient and enforceable reinforcement design method is provided.

The invention relates to the technical field of particle deposition and semiconductor anti-radiation analysis, and discloses an alpha particle energy deposition calculation method based on a Monte Carlo particle transport simulation tool, which sequentially comprises the steps of material and particle source setting, energy deposition score indicator use, single particle event statistics, soft error rate calculation and output and data analysis. By adopting the method and the device, the requirements of field experiments are greatly reduced, and the time and the cost required by the experiments are saved. Moreover, through the simulation method, designers can more efficiently calculate the energy deposition of the alpha particles in the semiconductor device and obtain the soft error rate of the alpha particles, and radiation hardening design of the semiconductor device can be carried out according to the data, so that the radiation resistance and reliability of the device are improved.

A radiation tolerant data storage apparatus and method. The radiation tolerant data storage apparatus and method can direct and store redundant copies of data in different physical locations to reduce the likelihood that a single radiation particle damages corresponding portions of the multiple copies of data. The radiation tolerant data storage apparatus and method includes a controller that arranges for multiple copies of data to be stored in a manner that reduces collinearity and detect if one copy has been damaged. The copies are preferably stored at physical locations that minimize or otherwise completely avoid the ability for a single radiation particle to damage or flip the same bit in each of the multiple copies of data. Most preferably, numerous other radiation hardening techniques can also be used to provide further radiation tolerance to the system and method.

The invention discloses a target detection network radiation hardening method for a space spacecraft AI chip, and belongs to the technical field of neural network radiation resistance. The method comprises the following steps: acquiring a target detection network model; a Dropout enhancement model and an exponential bit quantization optimization model are adopted respectively; and carrying out target detection in a space environment by adopting the optimized model. According to the method, the robustness of the neural network in the space radiation environment can be remarkably improved, the reasoning precision and speed of the model can be kept, the problem of reliable operation of the deep learning model in the space environment is solved, and the stability and task success rate of a spacecraft intelligent system are optimized. Aiming at the problem of single event upset caused by high-energy particle radiation in a space environment, the invention provides a training-reasoning collaborative optimization strategy, and provides reliable guarantee for AI application on a spacecraft.

The invention discloses an inter-satellite interconnection routing component radiation hardening method and system, and the method comprises the following steps: obtaining preset radiation hardening configuration parameters in response to a single event upset detection instruction started by a user, the configuration parameters comprising a detection time interval, a detection table item range and a single event upset exception processing strategy; in a system initialization stage, register table entries of a switch chip are backed up through a memory error correction mechanism, a reference table entry backup library is constructed, write operation on the table entries of the switch chip is intercepted during system operation, and the reference table entry backup library is synchronously updated in real time. According to the method, through regular scanning and real-time synchronous backup, efficient detection of single event upset errors is realized, and it is ensured that the system can be found and recovered as soon as possible when upset occurs; a user can set a detection interval, a table item range and a self-defined recovery behavior according to requirements, and extremely high flexibility is provided.

The invention discloses a total dose radiation resistant triode and a preparation method thereof, and belongs to the technical field of radiation hardening of bipolar devices. According to the preparation method of the total dose radiation resistant triode provided by the invention, an STI (shallow trench isolation) structure above the interface of the base well region and the emitter well region is eliminated and replaced by an oxide layer and polycrystalline silicon double-layer protection structure. As the thickness of the oxide layer is far smaller than that of the STI shallow trench isolation structure, under the same total dose irradiation, the number of oxide layer fixed charges and interface states generated by the oxide layer is greatly reduced, the excess base current of the triode can be effectively reduced, the degree of current gain damage is reduced, and the total dose irradiation resistance of the triode is improved.

The invention discloses a single event upset resistant self-recovery in-memory computing unit design method based on an SRAM (Static Random Access Memory), and relates to a single event upset resistant self-recovery in-memory computing unit design method. The invention aims to solve the problems that the area and the power consumption are usually increased, the stability is difficult to consider and the high-energy-efficiency design of the in-memory computing architecture cannot be met in the existing radiation hardening design. On the premise of guaranteeing high energy efficiency, through circuit structure and layout design and optimization, comprehensive improvement of single event upset resistance, self-recovery capability and stability is achieved, and the design requirement for high stability of a computing architecture in a space memory is met. The invention belongs to the technical field of integrated circuit design.

The invention relates to a method for obtaining the equivalent silicon layer thickness and the single event upset LET threshold value of a device, belongs to the technical field of space radiation effect simulation experiment and radiation hardening, and solves the technical problem that the equivalent silicon layer thickness and the single event upset LET threshold value of the device are difficult to obtain. The acquisition method comprises the following steps: calculating average proton energy and an LET value and a range in silicon; acquiring a relation curve between the single event upset cross section of the device and the average proton energy; extracting the upper and lower limits of energy corresponding to the single event upset section peak of the low-energy proton of the device; calculating the equivalent silicon layer thickness of the device based on the energy lower limit; calculating a proton range, energy and an LET value in the sensitive volume of the device based on the energy upper limit; calculating a proton range, energy and an LET value in the sensitive volume based on the proton which is higher than and closest to the energy upper limit; and a step of obtaining an LET threshold value of single event upset of the device. According to the method, the equivalent silicon layer thickness and the single event upset LET threshold value of the device can be accurately obtained.

A multi-bit, asynchronous e-fuse macro, the macro comprising: an input output enable, a power on reset, a write address, an input write enable, a ground clamp enable, and a write clock; a plurality of e-fuse bits; a supply voltage configured to allow programming at least one of the e-fuse bits; at least one fuse output; and self-timing and control circuitry configured to perform signaling, wherein each of the inputs is in electrical communication with the e-fuse macro.

The present invention discloses a ring oscillator, chip, and electronic device that utilizes reverse clock compensation for reinforcement. The ring oscillator includes a compensation reinforcement circuit for reinforcing the output pin OUT1 of a delay node using reverse clock compensation. The compensation reinforcement circuit includes two PMOS transistors M1 and M2, and two NMOS transistors M3 and M4. The source of the PMOS transistor M1 is connected to voltage VDD, and its drain is connected to ground via a series connection of PMOS transistors M2, M3, and M4. The gates of the PMOS transistors M1 and M4 are connected to the output pin OUT1, and the gates of the PMOS transistors M2 and NMOS transistors M3 are both connected to the input pin IN3, which has a complementary signal to the output pin OUT1. The present invention aims to provide radiation hardening for the ring oscillator and improve its resistance to single-event interference.

The present application relates to a kind of device equivalent silicon layer thickness and the acquisition method of single event upset LET threshold, belong to space radiation effect simulation experiment technique and anti-radiation hardening technical field, solve the technical problem that device equivalent silicon layer thickness and single event upset LET threshold are difficult to obtain, its acquisition method includes obtaining average proton energy and LET value and range in silicon;Obtain the relationship curve of device single event upset cross section and average proton energy;Extract the energy upper and lower limit corresponding to the single event upset cross section peak of low-energy proton of device;Based on energy lower limit, the equivalent silicon layer thickness of device is calculated;Based on energy upper limit, the proton range, energy and LET value in the sensitive volume of device are calculated;Based on the proton higher than and closest to energy upper limit, the proton range, energy and LET value in the sensitive volume are calculated;The step of obtaining the LET threshold of device single event upset.The method can realize the accurate acquisition of device equivalent silicon layer thickness and single event upset LET threshold.

The invention provides a PWM control chip radiation hardening method and a related device, and the method comprises the steps: determining a transmission path of a reference module and an oscillator module of a PWM control chip, carrying out the transient filtering of the transmission path, and obtaining a filtered bias signal; determining a first reference voltage of a reference module of the PWM control chip and a second reference voltage of a pre-step-down module, and judging the first reference voltage and the second reference voltage based on a third reference voltage of an over-temperature protection module to obtain an enable signal after over-temperature protection; monitoring a power path of the PWM control chip to obtain an anti-latch protection signal; and reinforcing the PWM control chip based on the filtered bias signal, the enable signal after over-temperature protection and the anti-latch protection signal to obtain a reinforced PWM control chip. According to the method, the single event effect can be reinforced in multiple dimensions, and the reinforcing effect is remarkably improved, so that the use requirements of most tasks can be met.

a) reacting at least one ethylenically unsaturated compound (A) with a compound of the general formula (I): DO-(R 1 O) n -X(I) (wherein D is a moiety containing an ethylenically unsaturated group (E), and R 1 is a linear or branched C2-C6 alkylene group, X is an ionic moiety, and n is in the range of 4 to 50), thereby obtaining a premix; and b) adding water to the premix until phase inversion occurs.

Radiation hard semiconductor devices and packaging are disclosed. A semiconductor device assembly includes a substrate, a semiconductor die stack electrically coupled to the substrate, and an ionizing radiation shield disposed over a top die of the semiconductor die stack, wherein the ionizing radiation shield comprises silicon carbide (SiC). The semiconductor device assembly further includes an encapsulant at least partially encapsulating the semiconductor die stack and the ionizing radiation shield.

The present invention relates to a single particle effect simulation irradiation device based on a heavy ion cyclotron, belonging to the technical field of radiation hardening. The device includes a mixed beam switching module, a beam line beam expansion module, a diagnostic target chamber and an irradiation target chamber. A beam current on-line monitoring module is provided in the diagnostic target chamber, and a beam current measurement module is provided in the irradiation target chamber. They are all connected through pipelines. The mixed beam switching module is used to quickly provide a single ion beam current. After being expanded by the beam line beam expansion module, a large-area uniform single ion beam current is obtained. The expanded single ion beam current is irradiated onto the device under test in the irradiation target chamber. During the irradiation process, the fluence / fluence rate and beam spot uniformity of the single ion beam current are monitored by the beam current on-line monitoring module, and the beam current energy and fluence rate are measured by the beam current measurement module. Using the device provided by the present invention can solve problems such as the generation of a large-area uniform beam spot, extraction to the irradiation target chamber for irradiation, and rapid sample change.

A distributed computing system for a space flight environment includes a radiation hardened single board computer and a peripheral board including a radiation hardened processor module. The radiation hardened single board computer includes a first radiation hardened processor and a first radiation hardened field programmable gate array. The radiation hardened processor module includes a second radiation hardened processor and a second radiation hardened field programmable gate array. The radiation hardened processor module is connected to the radiation hardened single board computer through a VPX backplane.

The invention discloses an irradiation hardening coefficient generation method and an irradiation hardening evaluation method, and relates to the technical field of irradiation hardening. The coefficient generation method comprises the following steps: performing ion irradiation on a test sample, and simulating according to ion irradiation parameters to obtain an irradiation damage depth distribution map; performing nanoindentation test on the test sample subjected to ion irradiation and a control sample of the test sample to obtain a first load displacement curve of the test sample and a second load displacement curve of the control sample; obtaining first and second simulated load displacement curves according to the first and second load displacement curves; obtaining a first elastic-plastic transition point and a second elastic-plastic transition point according to the first load displacement curve, the first simulated load displacement curve, the second load displacement curve and the second simulated load displacement curve; and obtaining the irradiation hardening coefficient according to the first elastic-plastic transition point, the second elastic-plastic transition point and the irradiation damage depth distribution map. Therefore, the radiation hardening can be quantitatively evaluated.

Rocket control is a difficult and unpredictable task in environments with inclement weather. As a result, launch missions are often strictly limited based on weather conditions. The present invention provides a device for controlling a rocket to account for environmental uncertainties and maintain optimal mission performance. In embodiments, the device is a radiation hardened field programmable gate array with an embedded artificial intelligence program contained in a graphics processing unit that is used for rocket reaction control by generating thrust vector commands.

The invention provides an LET microscopic confirmation method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductor data processing, and the method comprises the steps: setting initial conditions of a semiconductor material and charged particles; simulating the movement of the charged particles in the semiconductor material based on a time-dependent density functional theory to obtain a simulation result; and determining the LET according to the simulation result. The accurate setting of the initial condition provides a reliable input basis for the simulation process, and the TDDFT-based simulation process can truly restore the interaction mechanism of the charged particles and the semiconductor material from the microscopic level, thereby avoiding the defect of lack of electronic structure information in the calculation of the traditional empirical formula. And LET is determined through directional analysis of a simulation result, so that the accuracy and scientificity of LET calculation are remarkably improved, and powerful theoretical support is provided for engineering application such as radiation hardening design of semiconductor devices and research and development of radiation protection materials.

Methods, systems, and devices for radiation hardening for semiconductor systems are described. Shielding materials may be used to protect components of a semiconductor system from incident radiation. In some examples, the shielding materials may include a combination of film materials, such as organic polymer films, and radiation shielding materials, such as boron compounds. The shielding layers can be arranged in various configurations, including multilayer, single layer, or filler-embedded configurations, which may balance film flexibility and radiation protection. By strategically placing these shielding layers on components of a semiconductor system, the system may effectively attenuate radiation incidence on circuitry of the semiconductor system, thereby reducing the likelihood of radiation-induced errors and enhancing the overall reliability of the semiconductor system.

This invention provides a radiation-hardened LDO with base current balancing and drive enhancement functions, comprising: a bandgap reference circuit, a base current balancing circuit, an error amplifier circuit, a bias circuit, a startup circuit, a power drive circuit, and a drive enhancement circuit. The base current balancing circuit balances the bandgap reference current, ensuring that the bandgap current remains equal before and after irradiation. The drive enhancement circuit dynamically enhances the load-carrying capacity of the power transistor, ensuring its load-carrying capacity even after irradiation reduces the power transistor's current gain, thus guaranteeing that the output current range is unaffected by irradiation. From a circuit design perspective, this invention utilizes a simple and efficient circuit structure to achieve radiation hardening of the LDO at a relatively low cost, making the LDO circuit insensitive to the degradation of current gain of bipolar devices after irradiation, maintaining a stable output voltage and output load-carrying capacity.

The invention discloses a radiation hardening foreground calibration circuit and equipment, the foreground calibration circuit comprises a comparator, a first trigger, a counter, an accumulator, a digital-to-analog converter and a radiation hardening unit, the radiation hardening unit comprises a delay module, a second trigger, an XNOR gate and an AND gate, and the delay module and the second trigger delay and synchronize the result signal output by the comparator to obtain a second path of result signal, perform XNOR operation with the original result signal obtained by the first trigger, and then perform AND operation with the clock signal to serve as a response signal of the counter and the accumulator. The invention aims to solve the problem that a space task fails due to the fact that a traditional foreground calibration circuit is easily influenced by a single particle when running in a radiation environment and a single particle function is interrupted, improve the radiation hardening capability of the foreground calibration circuit running in the radiation environment, and realize the radiation hardening optimization design of the foreground calibration circuit.

A microelectronic device that is radiation hardened through the incorporation of a quantum structure getter (QSG) is provided. The device, such as a field effect transistor (FET) includes a conductive channel and a material stack comprising: a capping layer, one or more barrier layers comprising a high band gap, one or more quantum structures comprising a small band gap, and a substrate. The quantum structures are positioned in close proximity to the conductive channel to form a quantum well charge getter. The getter forms a low energy area beneath the FET, which traps and confines electron-hole pair wave functions produced from ionizing radiation, causing the wave functions overlap, recombine, and produce light emission. The quantum structures getter the wave functions, which reduces the ionized photocurrent that reaches the conducting channel, thereby hardening the microelectronic device against ionizing radiation.

The present application relates to a kind of single particle effective data acquisition methods of flip welding circuit, comprising: test sample substrate thinning;Test heavy ion selection;Test circuit temperature monitoring;Data validity determination;Thinning thickness measurement and effective data calculation.Compared with the traditional test method, using the single particle test evaluation method in the present application, the single particle test efficiency of flip welding process circuit can be effectively improved.Through temperature control, multiple verification and error calibration, etc., the accuracy and effectiveness of the test data of the flip welding process circuit in the single particle test are provided, effectively filling the blank of the single particle evaluation method of the flip welding circuit used in spaceflight, and providing strong support for the radiation hardening of flip welding process spaceflight integrated circuit.

The invention discloses a device for improving the total dose radiation effect of a bipolar device and a preparation method thereof, and belongs to the technical field of radiation hardening of semiconductor devices. A first conductive type base buried layer well region with higher concentration is formed in a first conductive type base deep well region of a traditional bipolar device, so that a current path of the base region is changed from being tightly attached to the lower surface of a shallow trench isolation structure to be a certain distance away from the shallow trench isolation structure; when the resistance of the first conductive type is smaller than that of the second conductive type, the first conductive type is more inclined to flow to the second conductive type emitter well region along the first conductive type base buried layer well region with smaller resistance, thereby being far away from the SiO2-Si surface defect, weakening the surface recombination and reducing the generation of excessive base current. According to the invention, the excess base current after the total dose radiation of the bipolar device can be effectively reduced, the degree of current gain damage is reduced, and the anti-radiation capability of the bipolar device is improved.

The invention relates to a phase frequency detector circuit with radiation hardening. The phase frequency detector circuit comprises a first D flip-flop circuit, a second D flip-flop circuit, a C unit circuit and a frequency locking indication unit circuit, the first D flip-flop circuit and the second D flip-flop circuit are the same in structure, each of the first D flip-flop circuit and the second D flip-flop circuit comprises a first DICE latch circuit and a second DICE latch circuit which are connected in sequence, and the DICE latch circuits are controlled by zero setting signals and clock signals; two input ends of the C unit circuit are respectively connected with output ends of the first D flip-flop circuit and the second D flip-flop circuit, and an output signal of the C unit circuit is fed back to the first D flip-flop circuit and the second D flip-flop circuit as a zero setting signal; the input end of the frequency locking indication unit circuit is connected with the output ends of the first D flip-flop circuit and the second D flip-flop circuit, and the output end of the frequency locking indication unit circuit outputs a frequency locking indication signal. According to the invention, the anti-radiation reinforcement design of the phase frequency detector circuit is realized.