5 results about "Radiation hardening" patented technology

This invention provides a radiation-hardened LDO with base current balancing and drive enhancement functions, comprising: a bandgap reference circuit, a base current balancing circuit, an error amplifier circuit, a bias circuit, a startup circuit, a power drive circuit, and a drive enhancement circuit. The base current balancing circuit balances the bandgap reference current, ensuring that the bandgap current remains equal before and after irradiation. The drive enhancement circuit dynamically enhances the load-carrying capacity of the power transistor, ensuring its load-carrying capacity even after irradiation reduces the power transistor's current gain, thus guaranteeing that the output current range is unaffected by irradiation. From a circuit design perspective, this invention utilizes a simple and efficient circuit structure to achieve radiation hardening of the LDO at a relatively low cost, making the LDO circuit insensitive to the degradation of current gain of bipolar devices after irradiation, maintaining a stable output voltage and output load-carrying capacity.

The application discloses a space spacecraft AI chip-oriented target detection network anti-radiation reinforcement method and belongs to the technical field of neural network anti-radiation. The method comprises the following steps: obtaining a target detection network model; respectively adopting Dropout enhancement and exponential bit quantization optimization models; and adopting the optimized model to perform target detection in a space environment. The application can not only significantly improve the robustness of a neural network in a space radiation environment, but also maintain the reasoning accuracy and speed of the model, solves the reliable operation problem of a deep learning model in a space environment, and optimizes the stability and task success rate of a spacecraft intelligent system. The application proposes a training-reasoning collaborative optimization strategy for the single event upset problem caused by high-energy particle radiation in a space environment, and provides reliable protection for AI application on a spacecraft.

This invention discloses a high-entropy carbon oxide / resin encapsulation coating for shielding high-energy electrons, its preparation method, and its application, belonging to the field of radiation hardening technology. This invention overcomes the problem of electronic component failure caused by high-energy electron irradiation. The invention involves high-energy ball milling of Nb, Mo, Ta, W, WO3, and carbon powder to obtain a high-entropy carbon oxide (NbMoTaW)C. 1‑x O x The mixture is combined with a resin matrix, coated onto electronic devices, and cured by heating to obtain an encapsulation coating that shields high-energy electrons and radiation-resistant electronic devices. This invention introduces oxygen into high-entropy materials, regulating the lattice structure and electron distribution, promoting lattice contraction and structural densification, and increasing the probability of interaction between high-energy electrons and atomic nuclei and extranuclear electrons in the material, thereby enhancing the material's radiation shielding capability. This invention features a simple process, strong adhesion to the device shell, easy thickness control, and suitability for complex device surface forming, significantly improving the engineering applicability of device packaging.

The application discloses a power device forward anti-single particle radiation reinforcement method based on medium engineering optimization, and is suitable for preparing or optimizing a power device containing a MOS structure. The method comprises the following steps: pre-treating a medium layer of a MOS sensitive area of the power device, adjusting the microstructure of the medium layer into a mixed-phase medium structure in which amorphous phases and crystalline phases coexist through annealing or laser processing, and passivating radiation-induced dielectric performance degradation from the material source; designing and optimizing geometric parameters of a terminal structure through TCAD simulation software to obtain the lowest and uniform electric field distribution in the medium area at the edge of the active area of the device, so as to buffer local electric field peaks caused by radiation; and selecting a high-thermal-conductivity crystal direction of a semiconductor material as a heat dissipation direction of a groove sidewall when the groove structure is prepared, so as to enhance heat dissipation and relieve transient thermal effects. Through multi-level forward synergistic design of materials, electric fields and heat management, the application systematically improves the anti-single particle burnout capability and gate wear threshold of the power device.