68 results about "Radiation hardening" patented technology

The invention discloses an anti-radiation hardening digital controlled oscillator, a clock data recovery circuit and equipment, and the digital controlled oscillator is characterized in that an anti-radiation hardening circuit unit is connected between a digital-to-analog converter (DAC) and a voltage-controlled oscillator (VCO), and comprises a voltage copying unit and a multiplexer; the voltage copying unit is used for copying a control voltage signal output by the digital-to-analog converter DAC, generating a copying voltage signal, sending the copying voltage signal to the multiplexer, and switching the output of the multiplexer from the control voltage signal to the copying voltage signal when the digital-to-analog converter DAC is subjected to single-particle bombardment. The DCO type clock data recovery circuit aims at solving the problem that a traditional DCO type clock data recovery circuit is prone to being affected by single particles when running in a radiation environment, single particle function interruption is generated, and consequently a space task fails, and the radiation hardening capacity of the DCO type clock data recovery circuit running in the radiation environment is improved.

The invention discloses a nuclear power plant bolt installation method and system based on augmented reality, and belongs to the field of bolt intelligent installation, and the method comprises the steps: collecting nuclear power plant environment data based on an environment monitoring sensor, and obtaining environment adaptation parameters through anti-radiation reinforcement processing; generating an installation guidance sequence containing specifications and torque values based on the environment adaptation parameters and the bolt identification result; bolt image features in the installation guidance sequence are analyzed through an image processing algorithm, position and angle deviation indexes are extracted, and deviation calibration data are obtained; collecting a fastening torque signal based on a torque measurement sensor, and fusing the fastening torque signal and the deviation calibration data to obtain a torque deviation correction value; updating calibration parameters based on the torque deviation correction value, obtaining the corrected mounting position and angle, and determining the accuracy of the bolt in-position state; bolt surface defects and fastening degree characteristics are extracted through image analysis, and a bolt installation quality evaluation result is generated.

The invention provides an SRAM (Static Random Access Memory) storage unit anti-single particle radiation reinforcement method and system, and relates to the technical field of microelectronics and circuit structure design, a redundant node coupled with a main storage node of an SRAM storage unit is constructed, and the redundant node is used for redundant storage of the logic state of the main storage node; the polarity of a main storage node is reinforced by configuring the main storage node into a circuit structure fully surrounded by a single-type transistor; wherein the redundant node and the main storage node after polarity reinforcement are integrated into a reinforced SRAM (Static Random Access Memory) storage unit. According to the method, circuit-level fusion and collaborative design are carried out on redundancy reinforcement and polarity reinforcement, so that the single event upset resistance of the SRAM unit is improved, and an efficient and enforceable reinforcement design method is provided.

The invention discloses a target detection network radiation hardening method for a space spacecraft AI chip, and belongs to the technical field of neural network radiation resistance. The method comprises the following steps: acquiring a target detection network model; a Dropout enhancement model and an exponential bit quantization optimization model are adopted respectively; and carrying out target detection in a space environment by adopting the optimized model. According to the method, the robustness of the neural network in the space radiation environment can be remarkably improved, the reasoning precision and speed of the model can be kept, the problem of reliable operation of the deep learning model in the space environment is solved, and the stability and task success rate of a spacecraft intelligent system are optimized. Aiming at the problem of single event upset caused by high-energy particle radiation in a space environment, the invention provides a training-reasoning collaborative optimization strategy, and provides reliable guarantee for AI application on a spacecraft.

The invention discloses an inter-satellite interconnection routing component radiation hardening method and system, and the method comprises the following steps: obtaining preset radiation hardening configuration parameters in response to a single event upset detection instruction started by a user, the configuration parameters comprising a detection time interval, a detection table item range and a single event upset exception processing strategy; in a system initialization stage, register table entries of a switch chip are backed up through a memory error correction mechanism, a reference table entry backup library is constructed, write operation on the table entries of the switch chip is intercepted during system operation, and the reference table entry backup library is synchronously updated in real time. According to the method, through regular scanning and real-time synchronous backup, efficient detection of single event upset errors is realized, and it is ensured that the system can be found and recovered as soon as possible when upset occurs; a user can set a detection interval, a table item range and a self-defined recovery behavior according to requirements, and extremely high flexibility is provided.

The invention discloses a single event upset resistant self-recovery in-memory computing unit design method based on an SRAM (Static Random Access Memory), and relates to a single event upset resistant self-recovery in-memory computing unit design method. The invention aims to solve the problems that the area and the power consumption are usually increased, the stability is difficult to consider and the high-energy-efficiency design of the in-memory computing architecture cannot be met in the existing radiation hardening design. On the premise of guaranteeing high energy efficiency, through circuit structure and layout design and optimization, comprehensive improvement of single event upset resistance, self-recovery capability and stability is achieved, and the design requirement for high stability of a computing architecture in a space memory is met. The invention belongs to the technical field of integrated circuit design.

A multi-bit, asynchronous e-fuse macro, the macro comprising: an input output enable, a power on reset, a write address, an input write enable, a ground clamp enable, and a write clock; a plurality of e-fuse bits; a supply voltage configured to allow programming at least one of the e-fuse bits; at least one fuse output; and self-timing and control circuitry configured to perform signaling, wherein each of the inputs is in electrical communication with the e-fuse macro.

The present invention discloses a ring oscillator, chip, and electronic device that utilizes reverse clock compensation for reinforcement. The ring oscillator includes a compensation reinforcement circuit for reinforcing the output pin OUT1 of a delay node using reverse clock compensation. The compensation reinforcement circuit includes two PMOS transistors M1 and M2, and two NMOS transistors M3 and M4. The source of the PMOS transistor M1 is connected to voltage VDD, and its drain is connected to ground via a series connection of PMOS transistors M2, M3, and M4. The gates of the PMOS transistors M1 and M4 are connected to the output pin OUT1, and the gates of the PMOS transistors M2 and NMOS transistors M3 are both connected to the input pin IN3, which has a complementary signal to the output pin OUT1. The present invention aims to provide radiation hardening for the ring oscillator and improve its resistance to single-event interference.

The present application relates to a kind of device equivalent silicon layer thickness and the acquisition method of single event upset LET threshold, belong to space radiation effect simulation experiment technique and anti-radiation hardening technical field, solve the technical problem that device equivalent silicon layer thickness and single event upset LET threshold are difficult to obtain, its acquisition method includes obtaining average proton energy and LET value and range in silicon;Obtain the relationship curve of device single event upset cross section and average proton energy;Extract the energy upper and lower limit corresponding to the single event upset cross section peak of low-energy proton of device;Based on energy lower limit, the equivalent silicon layer thickness of device is calculated;Based on energy upper limit, the proton range, energy and LET value in the sensitive volume of device are calculated;Based on the proton higher than and closest to energy upper limit, the proton range, energy and LET value in the sensitive volume are calculated;The step of obtaining the LET threshold of device single event upset.The method can realize the accurate acquisition of device equivalent silicon layer thickness and single event upset LET threshold.

The invention provides a PWM control chip radiation hardening method and a related device, and the method comprises the steps: determining a transmission path of a reference module and an oscillator module of a PWM control chip, carrying out the transient filtering of the transmission path, and obtaining a filtered bias signal; determining a first reference voltage of a reference module of the PWM control chip and a second reference voltage of a pre-step-down module, and judging the first reference voltage and the second reference voltage based on a third reference voltage of an over-temperature protection module to obtain an enable signal after over-temperature protection; monitoring a power path of the PWM control chip to obtain an anti-latch protection signal; and reinforcing the PWM control chip based on the filtered bias signal, the enable signal after over-temperature protection and the anti-latch protection signal to obtain a reinforced PWM control chip. According to the method, the single event effect can be reinforced in multiple dimensions, and the reinforcing effect is remarkably improved, so that the use requirements of most tasks can be met.

a) reacting at least one ethylenically unsaturated compound (A) with a compound of the general formula (I): DO-(R 1 O) n -X(I) (wherein D is a moiety containing an ethylenically unsaturated group (E), and R 1 is a linear or branched C2-C6 alkylene group, X is an ionic moiety, and n is in the range of 4 to 50), thereby obtaining a premix; and b) adding water to the premix until phase inversion occurs.

The present invention relates to a single particle effect simulation irradiation device based on a heavy ion cyclotron, belonging to the technical field of radiation hardening. The device includes a mixed beam switching module, a beam line beam expansion module, a diagnostic target chamber and an irradiation target chamber. A beam current on-line monitoring module is provided in the diagnostic target chamber, and a beam current measurement module is provided in the irradiation target chamber. They are all connected through pipelines. The mixed beam switching module is used to quickly provide a single ion beam current. After being expanded by the beam line beam expansion module, a large-area uniform single ion beam current is obtained. The expanded single ion beam current is irradiated onto the device under test in the irradiation target chamber. During the irradiation process, the fluence / fluence rate and beam spot uniformity of the single ion beam current are monitored by the beam current on-line monitoring module, and the beam current energy and fluence rate are measured by the beam current measurement module. Using the device provided by the present invention can solve problems such as the generation of a large-area uniform beam spot, extraction to the irradiation target chamber for irradiation, and rapid sample change.

The invention discloses an irradiation hardening coefficient generation method and an irradiation hardening evaluation method, and relates to the technical field of irradiation hardening. The coefficient generation method comprises the following steps: performing ion irradiation on a test sample, and simulating according to ion irradiation parameters to obtain an irradiation damage depth distribution map; performing nanoindentation test on the test sample subjected to ion irradiation and a control sample of the test sample to obtain a first load displacement curve of the test sample and a second load displacement curve of the control sample; obtaining first and second simulated load displacement curves according to the first and second load displacement curves; obtaining a first elastic-plastic transition point and a second elastic-plastic transition point according to the first load displacement curve, the first simulated load displacement curve, the second load displacement curve and the second simulated load displacement curve; and obtaining the irradiation hardening coefficient according to the first elastic-plastic transition point, the second elastic-plastic transition point and the irradiation damage depth distribution map. Therefore, the radiation hardening can be quantitatively evaluated.

Rocket control is a difficult and unpredictable task in environments with inclement weather. As a result, launch missions are often strictly limited based on weather conditions. The present invention provides a device for controlling a rocket to account for environmental uncertainties and maintain optimal mission performance. In embodiments, the device is a radiation hardened field programmable gate array with an embedded artificial intelligence program contained in a graphics processing unit that is used for rocket reaction control by generating thrust vector commands.

The invention provides an LET microscopic confirmation method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductor data processing, and the method comprises the steps: setting initial conditions of a semiconductor material and charged particles; simulating the movement of the charged particles in the semiconductor material based on a time-dependent density functional theory to obtain a simulation result; and determining the LET according to the simulation result. The accurate setting of the initial condition provides a reliable input basis for the simulation process, and the TDDFT-based simulation process can truly restore the interaction mechanism of the charged particles and the semiconductor material from the microscopic level, thereby avoiding the defect of lack of electronic structure information in the calculation of the traditional empirical formula. And LET is determined through directional analysis of a simulation result, so that the accuracy and scientificity of LET calculation are remarkably improved, and powerful theoretical support is provided for engineering application such as radiation hardening design of semiconductor devices and research and development of radiation protection materials.

Methods, systems, and devices for radiation hardening for semiconductor systems are described. Shielding materials may be used to protect components of a semiconductor system from incident radiation. In some examples, the shielding materials may include a combination of film materials, such as organic polymer films, and radiation shielding materials, such as boron compounds. The shielding layers can be arranged in various configurations, including multilayer, single layer, or filler-embedded configurations, which may balance film flexibility and radiation protection. By strategically placing these shielding layers on components of a semiconductor system, the system may effectively attenuate radiation incidence on circuitry of the semiconductor system, thereby reducing the likelihood of radiation-induced errors and enhancing the overall reliability of the semiconductor system.

This invention provides a radiation-hardened LDO with base current balancing and drive enhancement functions, comprising: a bandgap reference circuit, a base current balancing circuit, an error amplifier circuit, a bias circuit, a startup circuit, a power drive circuit, and a drive enhancement circuit. The base current balancing circuit balances the bandgap reference current, ensuring that the bandgap current remains equal before and after irradiation. The drive enhancement circuit dynamically enhances the load-carrying capacity of the power transistor, ensuring its load-carrying capacity even after irradiation reduces the power transistor's current gain, thus guaranteeing that the output current range is unaffected by irradiation. From a circuit design perspective, this invention utilizes a simple and efficient circuit structure to achieve radiation hardening of the LDO at a relatively low cost, making the LDO circuit insensitive to the degradation of current gain of bipolar devices after irradiation, maintaining a stable output voltage and output load-carrying capacity.

The invention discloses a radiation hardening foreground calibration circuit and equipment, the foreground calibration circuit comprises a comparator, a first trigger, a counter, an accumulator, a digital-to-analog converter and a radiation hardening unit, the radiation hardening unit comprises a delay module, a second trigger, an XNOR gate and an AND gate, and the delay module and the second trigger delay and synchronize the result signal output by the comparator to obtain a second path of result signal, perform XNOR operation with the original result signal obtained by the first trigger, and then perform AND operation with the clock signal to serve as a response signal of the counter and the accumulator. The invention aims to solve the problem that a space task fails due to the fact that a traditional foreground calibration circuit is easily influenced by a single particle when running in a radiation environment and a single particle function is interrupted, improve the radiation hardening capability of the foreground calibration circuit running in the radiation environment, and realize the radiation hardening optimization design of the foreground calibration circuit.

The present application relates to a kind of single particle effective data acquisition methods of flip welding circuit, comprising: test sample substrate thinning;Test heavy ion selection;Test circuit temperature monitoring;Data validity determination;Thinning thickness measurement and effective data calculation.Compared with the traditional test method, using the single particle test evaluation method in the present application, the single particle test efficiency of flip welding process circuit can be effectively improved.Through temperature control, multiple verification and error calibration, etc., the accuracy and effectiveness of the test data of the flip welding process circuit in the single particle test are provided, effectively filling the blank of the single particle evaluation method of the flip welding circuit used in spaceflight, and providing strong support for the radiation hardening of flip welding process spaceflight integrated circuit.

The application discloses a kind of anti single particle radiation reinforced gallium nitride high electron mobility transistor, comprising: Si substrate, GaN buffer layer, N type AlGaN layer being arranged in the top layer local position of GaN buffer layer, AlGaN barrier layer being arranged on GaN buffer layer and N type AlGaN layer, P type GaN layer being arranged above N type AlGaN layer and inside AlGaN barrier layer, surface SiN passivation layer, and drain electrode, gate electrode, source electrode;The N type AlGaN layer is generated below barrier layer between gate and drain in the application, so that output current is improved;By generating P type GaN layer and N type AlGaN layer between source and drain, the conduction band energy level can be raised, the injection of electrons from source to buffer layer under off state is blocked, the buffer layer leakage current is reduced, the internal electric field of device is weakened, the collision ionization generation of electron-hole pair is reduced, the single particle transient current is reduced, and the device radiation resistance performance is improved.

The application provides a kind of lock phase loop single particle radiation sensitive node detection method, belong to lock phase loop technical field.It includes: according to double exponential current pulse mathematical model, single particle transient pulse current source model is obtained by using piecewise linear current source fitting;Single particle transient current pulse model obtained by piecewise linear current source fitting is injected into the node of lock phase loop circuit, and circuit simulation is carried out;According to the output change of simulation result of lock phase loop, determine the sensitive node in lock phase loop circuit that is susceptible to single particle effect.This application can determine the sensitive node in lock phase loop circuit that is susceptible to single particle effect and the degree of influence by simulation, and provide guidance for the direction of radiation hardening design of lock phase loop circuit.

The invention discloses a multi-objective optimization method for relieving a single-particle soft error of a large-scale integrated circuit, and the method achieves the soft error prediction of the large-scale integrated circuit based on a graph neural network algorithm, and obtains a circuit soft error rate and a failure type. Based on a soft error prediction result and a genetic algorithm, a multi-objective optimized Pareto optimal solution set under various reinforcement measures (such as TMR and reinforcement FF unit replacement) is realized, so that the soft error of a large-scale integrated circuit is relieved, and the overhead of extra area and power consumption caused by reinforcement design is balanced. The optimization strategy of the large-scale integrated circuit is formulated through the combination of the two algorithms, and the comprehensive performance of the large-scale integrated circuit for resisting the single-particle soft error, the area and the power consumption is improved through the optimal strategy of the combination of multiple reinforcing measures on the premise of ensuring that the circuit avoids serious harm caused by the single-particle effect. The method can be used for providing guidance for radiation hardening design and optimization of a large-scale integrated circuit.

Disclosed herein are various embodiments for radiation-hardened, SEU tolerant configuration FFs for standard cell-based eFPGA fabrics. These various embodiments include a dual-storage-mode (DSM) FF, a dual-modular redundant slave latch (DMR-SL) FF and a HALF-DICE FF. These embodiments assume that a radiation strike is likely to affect only one element of a radiation-hardened FF and provide additional circuitry to introduce an automatic refresh feature into the designs sufficient to recover from an SEU.

A radiation hardened flip-flop includes a plurality of secondary flip-flops. Each secondary flip-flop includes both a data input terminal and an alternate data input terminal. Each secondary flip-flop also includes an enable terminal that selectively enables use of the alternate data input terminal. The radiation hardened flip-flop includes an error detection circuit that detects whether an error is present in one or more of the secondary flip-flops and provides an enable signal to the enable terminals indicating the presence or absence of an error in one or more of the secondary flip-flops.

The invention relates to relates to a pressure cell configured for working according to the piezo-resistive principle and for use under high-energy radiation, particularly for use in space, i.e. to work under cosmic radiation. In order to reduce radiation drift effects during operation of the pressure cell, the pressure cell is treated with a radiation hardening procedure comprising an exposing of the cell with a radiation dose up to a saturation range of a radiation drift curve or above.

This invention discloses a single-event upset (SET) cross-section simulation method based on TCAD-SPICE-Geant4 co-simulation, belonging to the field of integrated circuit radiation effects and hardening technology. First, the critical charge value inducing SET upset in integrated circuits is extracted using TCAD-SPICE co-simulation. Then, for single-transistor devices at sensitive circuit nodes, TCAD is used to simulate the transient current pulse curves at different locations of the device under single-event radiation, extracting the charge collection weights at different locations. Next, Geant4 is used to simulate the charge generated at different locations of the device under particle irradiation. Finally, the SET upset cross-section of the circuit is calculated. This simulation method has high reliability and can accurately predict the sensitivity of integrated circuits to single-event radiation, providing theoretical guidance for subsequent circuit-level radiation hardening design.

The utility model provides a complementary metal oxide semiconductor (CMOS) device and an integrated circuit. The CMOS device comprises a substrate, a well region, a gate structure located on one side, far away from the substrate, of the well region, and a source-drain injection region located in the well region. The anti-radiation reinforcement buffer region is located in the well region and surrounds the source region and the drain region in the source-drain injection region; the isolation area is located on the surface of the substrate, and the orthographic projection of the isolation area on the surface of the substrate surrounds the orthographic projection of the radiation hardening buffer area on the surface of the substrate. Therefore, the source region and the drain region can be isolated from the isolation region, the change of the main body structure of the original CMOS device is relatively small, and on the premise of ensuring the length of the channel between the source region and the drain region, even if the total dose irradiation effect causes the inversion of the silicon surface layer under the well region and the whole isolation region, due to the existence of the anti-radiation reinforced buffer region, the anti-radiation effect of the CMOS device is improved. And an electric leakage channel cannot be formed between the source region and the drain region, so that the anti-radiation capability is improved.

A memory cell comprises NMOS and PMOS transistors and voltage-controlled impedance components (VCICs). A first NMOS transistor and a first PMOS transistor form a first inverter. A second NMOS transistor and a second PMOS transistor form a second inverter. The first inverter and the second inverter are electrically connected to one another to form cross-coupled inverters, wherein an input of the first inverter is coupled to an output of the second inverter and an output of the first inverter is coupled to an input of the second inverter. A first VCIC is electrically connected between the output of the first inverter and the input of the second inverter. A second VCIC is electrically connected between the input of the first inverter and the output of the second inverter. An impedance of each VCIC varies according to one or more control voltages applied to the respective VCIC.

The present invention provides a method and system for optimizing the calculation of total dose radiation hardening for geostationary satellites, which relates to the technical field of satellite radiation resistance design. Aiming at high cost-effectiveness, a cost-effectiveness optimization model for total dose radiation hardening of satellites is constructed. This model takes the radiation design margin (RDM) as the evaluation index, and takes the quality grades and total dose resistance capabilities of different types of space components as the core parameters to establish a parameter model of the total dose radiation hardening cost and component grades and shielding quality. Then, with the cost-effectiveness as the objective function, a gradient-based optimization method is used to optimize the total dose radiation hardening of the satellite, and the uncertainties in the optimization process are analyzed and discussed. The present invention has strong operability and realizability, can improve the on-orbit reliability of the satellite system and effectively reduce the development cost on the premise of meeting the satellite life and total dose radiation hardening requirements.