180 results about "Radiation hardening" patented technology

Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include one or more parasitic isolation devices and / or buried layer structures disclosed in the present application. The introduction of design and / or process steps to accommodate these novel structures is compatible with conventional CMOS fabrication processes, and can therefore be accomplished at relatively low cost and with relative simplicity.

A method for rapid prototyping by using linear light as sources employs DLP (Radiation Hardening Formation) or LCD, together with the portable devices and linear light source to treat the raw material in two stages. The first stage is to spread the raw material to a selected zone by nozzles or rollers and illuminating the material to let the material being processed and have physical o mechanical changes. The second stage is to use more powerful linear light source with the cooperation of the portable DMD (Digital Micromirror Device) or LCD (Liquid Crystal Display) to illuminate the material to make it have a second times of physical o mechanical changes. By the piling up the layers of the material, a complete 3-D work piece is obtained.

Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include one or more parasitic isolation devices and / or buried layer structures disclosed in the present application. The introduction of design and / or process steps to accommodate these novel structures is compatible with conventional CMOS fabrication processes, and can therefore be accomplished at relatively low cost and with relative simplicity.

The present invention facilitates improvements in laser ablation of solid samples to be analyzed by an external inductively coupled plasma (ICP) emission spectrometer, ICP / mass-spectrometer (ICP-MS), or flowing afterglow (FAG) mass spectrometer (FAG-MS) for elemental analysis (ICP and ICP-MS) or molecular analysis (FAG-MS). A novel invention mirror-with-hole beam combiner eliminates chromatic aberration in the invention sample view and allows rad-hardening the laser ablation invention for use in a radiation hot cell for analysis of high activity nuclear waste. Many other novel invention rad-hardening attributes facilitate a comprehensive rad-hardened laser ablation system (the world's first). In other embodiments, invention novelties include unusually large homogeneous focused laser spot diameters, unusually long laser objective lens focal length, wide range operationally variable laser path length with built-in re-alignment, operationally variable demagnification ratio and diameter of the focused laser spot, the use of significantly higher powered SMR lasers in a large spot diameter to facilitate high sensitivity bulk analysis of solid samples, a demountable and gravitationally self-sealing stack assembly laser ablation cell, and the world's first auto-samplers (mechanized sample changers) for analytical laser ablation.

The invention discloses a high-performance crosslinked ethylene and tetrafluoroethene copolymer insulated cable and a preparation method thereof. The insulated cable comprises a lead (1), an insulation sleeve (2), a shielding sleeve (3) and a sheath (4), wherein the insulation sleeve (2), the shielding sleeve (3) and the sheath (4) sleeve the lead (1) successively from inside to outside, the insulation sleeve (2) and the sheath (4) include crosslinked ethylene and tetrafluoroethene copolymer sleeves respectively, and the shielding sleeve (3) is a silvered aramid fiber braided sleeve. The insulated cable prepared by the method is high in insulatiing, mechanical and radiation-hardening properties and is chemically stable in the vacuum environment.

A system and method for hardening a logic circuit against radiation-event effects is provided. The system may include a logic circuit, first and second feed-forward devices, and first and second feedback devices. The logic circuit may be operable to output independently-obtained first and second redundant signals responsive to a desired input signal. Each of the first and second feed-forward devices may receive both of the first and second redundant signals. When the first and second redundant signals are in expected states, then the first and second feed-forward devices may responsively provide respective first and second feed-forward signals. Each of the first and second feedback devices may receive both of the first and second feed-forward signals. When the first and second feed-forward signals are in expected states, then the first and second feedback devices responsively feed respective first and second feedback signals back to the respective first and second redundant signals.

The invention relates to a total dose radiation hardening I-shaped gate layout structure, which comprises an active region, a field oxidation region outside the active region, and an I-shaped gate overlapped with the active region. The part on the active region, which is not overlapped with the I-shaped gate, is divided into a rectangle source region and a rectangle drain region. The total dose radiation hardening I-shaped gate layout structure arranges a gate oxidation layer below the I-shaped gate layer of the whole region where the I-shaped gate and the active region are overlapped, not only comprises an a region between the source region and the drain region, but also comprises b regions on the upper and lower parts of the source region and the drain region. The formation of the b regions pushes off the distances among the source region, the drain region and the field oxidation region, thus, the total dose radiation hardening I-shaped gate layout structure avoids a field region, cuts off the accesses between an edge radiation parasitic channel of the field oxidation region and the source region and the drain region, better solves the parasitic leakage problem caused by the ionizing radiation total-dose effect, improves the ionizing radiation resistance of the circuit, reduces the chip layout area, and can be applied into the large scale integrated circuit system.

The invention provides a novel ceramic heat insulating coat and a preparation process of the novel ceramic heat insulating coat. The coat comprises a three-layer structure, including a hollow ceramic micro-bead matrix heat insulating layer, a metal material coating film layer and a seal undercoat layer from outside to inside, wherein hollow ceramic micro-beads are arranged in the hollow ceramic micro-bead matrix heat insulating layer, and the interiors of the hollow ceramic micro-beads are vacuum. The coat and the preparation process disclosed by the invention has the advantages that the production process is simple, the use is economic and reasonable, the construction is convenient, the capacities of reflective heat insulation and radiation hardening can be realized, energy can be obviously saved, the development prospect is considerable.

Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include one or more parasitic isolation devices and / or buried layer structures disclosed in the present application. The introduction of design and / or process steps to accommodate these novel structures is compatible with conventional CMOS fabrication processes, and can therefore be accomplished at relatively low cost and with relative simplicity.

A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.

A method for rapid prototyping by using linear light as sources employs DLP (Radiation Hardening Formation) or LCD, together with the portable devices and linear light source to treat the raw material in two stages. The first stage is to spread the raw material to a selected zone by nozzles or rollers and illuminating the material to let the material being processed and have physical o mechanical changes. The second stage is to use more powerful linear light source with the cooperation of the portable DMD (Digital Micromirror Device) or LCD (Liquid Crystal Display) to illuminate the material to make it have a second times of physical o mechanical changes. By the piling up the layers of the material, a complete 3-D work piece is obtained.

A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (1013 to 1017 ions / cm2) of a large atom group III element, such as B, Al, Ga or In at an energy between about 30 and 500 keV. The implant is followed by an implant of a large group V element, such as P, As, Sb, or Bi using similar doses and energies to the group III element. The group V element compensates the group III element. The combination of the two large atoms decreases the diffusivity of small atoms, such as B, in the implanted areas. Furthermore, the combination of the group III and group V elements in roughly equal proportions creates recombination sites and electron traps in the field oxide, resulting in a radiation hardened semiconductor device.

A near-infrared shielding film composed of a substratum film having, superimposed on its one major surface, a hard coat layer produced from a hard coat layer forming material containing a near-infrared absorbent and an actinic energy radiation hardening compound and having, superimposed on its other major surface, a pressure sensitive adhesive layer, characterized in that the actinic energy radiation hardening compound is composed mainly of an acrylate monomer of penta- or higher functionality. This film has characteristics such that it excels in not only near-infrared shielding performance but also visible ray transmission, having high scratch resistance and weather resistance, and such that in the application to curved glass, the film exhibits reduced curling to thereby facilitate application work, being suitable for application to buildings and automobiles, especially the window glass of automobile.