Total dose radiation hardening I-shaped gate layout structure

Abstract

The invention relates to a total dose radiation hardening I-shaped gate layout structure, which comprises an active region, a field oxidation region outside the active region, and an I-shaped gate overlapped with the active region. The part on the active region, which is not overlapped with the I-shaped gate, is divided into a rectangle source region and a rectangle drain region. The total dose radiation hardening I-shaped gate layout structure arranges a gate oxidation layer below the I-shaped gate layer of the whole region where the I-shaped gate and the active region are overlapped, not only comprises an a region between the source region and the drain region, but also comprises b regions on the upper and lower parts of the source region and the drain region. The formation of the b regions pushes off the distances among the source region, the drain region and the field oxidation region, thus, the total dose radiation hardening I-shaped gate layout structure avoids a field region, cuts off the accesses between an edge radiation parasitic channel of the field oxidation region and the source region and the drain region, better solves the parasitic leakage problem caused by the ionizing radiation total-dose effect, improves the ionizing radiation resistance of the circuit, reduces the chip layout area, and can be applied into the large scale integrated circuit system.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit layout, and in particular relates to a total dose radiation reinforced I-shaped grid layout structure. Background technique [0002] With the development of aerospace industry, higher and more stringent requirements are put forward for semiconductor integrated circuits. Because silicon gate CMOS circuits have the advantages of high speed and low power consumption, the development of integrated circuits has become the mainstream of today. However, experiments have shown that the radiation resistance of circuits without radiation hardening is low, generally only reaching 10-50Gy(Si), which is far from meeting the requirements for the radiation resistance of circuits in the aerospace and national defense fields. Therefore, radiation-resistant hardened microelectronics The development of technology has become an important topic. [0003] The ionizing radiation failure of integrated circui...

AI Technical Summary

Problems solved by technology

However, because the guard ring needs to occupy a large amount of chip area and increase the parasitic capacitance of the circuit, which reduces the speed of the circuit, it is difficult to apply it to large-scale integrated circuits.

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