Double-edge anti-integral dose radiation reinforced layout structure

Abstract

The invention relates to a double-edge total dose radiation resistance reinforcement domain structure, and the domain structure comprises an underlay, an active zone, an injection zone and a bar, wherein the active zone and the injection zone are formed on the underlay; overlapping zone of the active zone and the injection zone forms a source zone and a leakage zone; the bar adopts a double-edge structure two sides of which is beyond the active region; the source zone and the leakage zone are separated; the injection zone is arranged on the inner part of the active zone; thin oxide between the active zone and the leakage zone is ensured to exist between the active zone and the leakage zone; and a passageway between the active zone and the leakage zone completely formed by thick oxide is eliminated. The double-edge total dose radiation resistance reinforcement domain structure solves the problem of parasitic leakage caused by the total dose effect of ionizing radiation, and solves the problems of great area, bad symmetry, difficult realization of small breadth length ratio, difficult modelling, and the like brought by traditional closed bar reinforcement structure at the same time.

Description

technical field [0001] The invention relates to a layout structure, in particular to a total dose radiation-reinforced layout structure. Background technique [0002] figure 1 A plan view of a standard conventional transistor 11 is shown. Transistor 11 comprises an injection region 111, an active region 13, a polysilicon gate 16, and the overlapped portion of the injection region 111 and the active region 13 (here, the active region portion) is divided into three parts by the gate 16, covered by the gate The part of the gate is the channel region 112, and the other parts on both sides of the gate are respectively the source region 14 and the drain region 15 of the transistor. The active region 13 defines a thin oxide region, and the part outside the active region is a thick oxide region. When the transistor works, whether the substrate (or well) 12 of the channel region 112 is controlled by the voltage of the gate 16 is inversion, and when the substrate 12 is inversion, a...

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Problems solved by technology

[0010] The technical problem of the present invention is: to overcome the deficiencies of the prior art, to provide an anti-total dose radiation-reinforced layout structure, which solves the problem of parasitic leakage caused by the total dose effect of ionizing radiation, and at the same time solves the problems caused by the traditional closed gate reinforcement structure. Large area, poor symmetry, difficult to achieve small aspect ratio and difficult to model

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