The invention relates to a flowing atmosphere edge-defined film-fed crystal growth multi-chip sapphire crystal growth device and method. The device comprises a smelting furnace and an atmosphere device, the smelting furnace is placed into the atmosphere device, inert gas with an up-out and down-in flowing direction is fed into the atmosphere device, the smelting furnace comprises a tray, a heat insulation cylinder (4), an induction coil (8), a bottom heat insulation layer (13), a crucible (11), a growth mould unit (10), a seed crystal (6) and a seed rod (1), the heat insulation cylinder (4) isarranged on the tray, the induction coil (8) sleeves the heat insulation cylinder (4), the bottom heat insulation layer (13), the crucible (11), the growth mould unit (10), the seed crystal (6) and the seed rod (1) are sequentially arranged in the heat insulation cylinder (4) from bottom to top, and the seed crystal (6) is fixed to the bottom end of the seed rod (1) and arranged right above the growth mould unit (10) in a vertically movable manner through the seed rod (1). Compared with the prior art, the device has the advantages that gradient temperature distribution of a sapphire crystal growth interface area can be effectively controlled, synchronous consistency of 20 whole sapphire crystals is realized, the growth process is visible and controllable, and crystal quality is high.