Flowing atmosphere edge-defined film-fed crystal growth multi-chip sapphire crystal growth device and method

Abstract

The invention relates to a flowing atmosphere edge-defined film-fed crystal growth multi-chip sapphire crystal growth device and method. The device comprises a smelting furnace and an atmosphere device, the smelting furnace is placed into the atmosphere device, inert gas with an up-out and down-in flowing direction is fed into the atmosphere device, the smelting furnace comprises a tray, a heat insulation cylinder (4), an induction coil (8), a bottom heat insulation layer (13), a crucible (11), a growth mould unit (10), a seed crystal (6) and a seed rod (1), the heat insulation cylinder (4) isarranged on the tray, the induction coil (8) sleeves the heat insulation cylinder (4), the bottom heat insulation layer (13), the crucible (11), the growth mould unit (10), the seed crystal (6) and the seed rod (1) are sequentially arranged in the heat insulation cylinder (4) from bottom to top, and the seed crystal (6) is fixed to the bottom end of the seed rod (1) and arranged right above the growth mould unit (10) in a vertically movable manner through the seed rod (1). Compared with the prior art, the device has the advantages that gradient temperature distribution of a sapphire crystal growth interface area can be effectively controlled, synchronous consistency of 20 whole sapphire crystals is realized, the growth process is visible and controllable, and crystal quality is high.

Description

technical field [0001] The invention belongs to the technical field of crystal material preparation, and relates to a multi-chip sapphire guided-mode crystal growth device in an atmosphere flowing state and a preparation method based on the device. Background technique [0002] Sapphire is an aluminum oxide (α-Al 2 o 3 ) single crystal, also known as corundum, is a unique combination of excellent optical, physical and chemical properties. As the hardest oxide crystal, artificial sapphire is used in various demanding fields due to its optical and physical properties. It can maintain its high strength, excellent thermal properties and transmittance at high temperatures, and has good thermal conductivity. Characteristics, excellent electrical and dielectric properties, and chemical corrosion resistance. With the rapid development of science and technology, artificial sapphire (Al 2 o 3 ) crystal has become an extremely important basic material in modern industry, especiall...

AI Technical Summary

Problems solved by technology

At present, only a few countries such as Russia, the United States, and Japan have mastered this technology, and the current research level of the guided mold method in China is low, and only single-sheet and double-sheet growth can be achieved. At the same time, foreign imported equipment has poor product consistency and manual dependence. High cost, long delivery cycle, high price and other issues have seriously affected the development of sapphire guided mode crystal growth technology in China

[0006] Under traditional process conditions, the protective atmosphere does not flow and is static, with slight negative pressure, the wafers on both sides are closer to the heating body, the temperature is high, and the shoulders are not placed or not placed, the multi-chip sapphire crystal growth is poor in synchronization, and the yield is low. There are many volatiles and serious pollution

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