The invention discloses a method for processing a quartz resonator wafer. The quartz wafer is processed by the following steps: I, plating a metal film, namely totally plating chromium on a wafer board by using a film plating machine, plating gold, and finally depositing the gold on the surface of the wafer board in a film form, wherein the vacuum degree of the film plating machine is 0.35-0.45Pa,the sputtering power of the gold is 0.65kW, and the sputtering power of chromium is 0.4kW; II, performing spray gluing; III, performing soft baking; IV, performing mask alignment and exposure; V, baking after exposure; VI, developing; VII, performing hard baking; VIII, removing the metal film; IX, performing BOE corrosion; X, removing photoresist; XI, repeating the steps II-VIII; XII, splitting;and XIII, etching, and cleaning, namely placing the wafer into an etching machine, etching by an etching solution, flushing and drying. According to the method disclosed by the invention, the mechanical grinding wafer thickness limit of 30 microns is broken through, the power is about 55MHz, and the etching effect is excellent.