Processing method of quartz resonator wafer

A technology of quartz resonators and processing methods, applied in piezoelectric/electrostrictive/magnetostrictive devices, electrical components, impedance networks, etc. Too consistent, the spread of the quartz wafer is not very good, etc., to achieve the effect of good parallelism, guaranteed strength, and good parallelism

Active Publication Date: 2021-07-02
TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO LTD
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Problems solved by technology

However, in the traditional quartz wafer etching process, the spread of the quartz wafer is not very good, there is overlap between the wafers, and the parallelism is not good, resulting in inconsistent corrosion of the etched surface of the wafer, which can only meet ordinary quartz with a base frequency of 55MHz and below. The processing requirements of wafers cannot meet the processing requirements of high fundamental frequency wafers

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  • Processing method of quartz resonator wafer
  • Processing method of quartz resonator wafer
  • Processing method of quartz resonator wafer

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Embodiment Construction

[0039] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples serve to illustrate the invention.

[0040] First, prepare the corrosion solution, the preparation steps of the corrosion solution are as follows:

[0041] a. Prepare ammonium fluoride solution: take container A and mix according to the weight ratio of ammonium fluoride and deionized water 1:1.35, and stir evenly;

[0042] b. Prepare hydrofluoric acid solution: Take container B and add deionized water first, then add hydrofluoric acid, the weight ratio of deionized water and hydrofluoric acid is 1:0.27, and then the ammonium fluoride solution and the solution in container B are in volume ratio 1:2 mix;

[0043] c. Preparation of surface stripping agent: perfluorooctane sulfonate ammonium: isopropanol: deionized water according to the weight ratio of 1:0.7:2 to prepare the surface st...

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Abstract

A processing method for a quartz resonator wafer, the quartz wafer is processed according to the following steps: 1. metallization film: use a film coater to plate chromium on the wafer plate, then gold-plate it, and finally deposit it on the wafer plate surface in the form of a thin film, The vacuum degree of the coating machine is 0.35-0.45Pa, the sputtering power of gold is 0.65kW, and the sputtering power of chromium is 0.4kW; Ⅱ. Spray coating Ⅲ. Soft baking Ⅳ. Mask alignment and exposure; Ⅴ. Baking after exposure ; Ⅵ. Development; Ⅶ. Hard film baking; Ⅷ. Removal of metal film; Ⅸ. BOE corrosion. Ⅹ. Removing the photoresist; Ⅺ. Repeating steps Ⅱ‑Ⅷ; Ⅻ. Splitting; ⅩⅢ. Etching and cleaning; the wafer is placed in an etching machine, etched by an etching solution, and then rinsed and dried. The invention breaks through the limit of 30 μm thickness of mechanical grinding wafer, about 55 MHz, and has better corrosion effect.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a processing method for a quartz resonator wafer. Background technique [0002] In the existing quartz wafer processing, the frequency limit for batch and stable production by mechanical grinding is about 55 MHz with the fundamental wave starting, and the thickness of the quartz wafer is 30 μm. If it is desired to use an AT-type quartz crystal to obtain a frequency greater than the above-mentioned limit, it is necessary to use a high-order vibration vibration mode. [0003] Therefore, in order to obtain high frequencies, it is necessary to use complex circuits to control vibration modes such as third harmonics. However, it still cannot meet the characteristic requirements of high-frequency traction. The higher the frequency of the quartz wafer, the higher the requirement for parallelism. However, in the traditional quartz wafer etching process, the spread of the quart...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/332H03H9/19
CPCH03H9/19H10N30/082
Inventor 周荣伟郑玉南狄建兴
Owner TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO LTD
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