3459 results about "Thin membrane" patented technology

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

A hardcoat film (11) is equipped with a hardcoat layer which contains a cured article of a silsesquioxane compound and is located on one or more main surfaces of a resin film (1). The silsesquioxane compound contains a structure represented by general formula (5) and a structure represented by general formula (6), the ratio of the structure represented by general formula (5) to the total amount of Si atoms is 0.2-0.95, and the ratio of the structure represented by general formula (5) to the total amount of the structure represented by general formula (5) and the structure represented by general formula (6) is greater than 0.4. Z represents an organic group containing an alicyclic epoxy group in general formula (5), and in general formula (6), R4 represents a divalent organic group, the main chain of which has a carbon number of 4-16, and Y represents a glycidyloxy group.　(5): [Z-Si]; (6): [Y-R4-Si]

A method for forming a semiconductor device provides a substrate having a patterned structure containing a semiconductor material, wherein the patterned structure has a side profile including depressions, such as a patterned film stack, and a spacer layer conformally deposited on and within the depressions of the patterned structure; and a reaction layer formed on the spacer layer by reacting the surface of the spacer layer with a plasma-excited first etching gas, wherein the plasma-excited first etching gas contains fluorine, hydrogen, and nitrogen to form the reaction layer, and at least a portion of the reaction layer is removed by ion bombardment caused by exposure to a plasma-excited second etching gas. The spacer layer may be SiOCN. The reaction layer may be ammonium silicofluoride. The first etching gas may contain SF6, H2, and N2, or NF3, H2, and N2. The reaction and removal may be carried out at room temperature in the same chamber.

To provide: a method for forming a resist underlayer film that contains metal and that exhibits both a high filling property and high dry etching resistance; and a patterning method using the same.SOLUTION: A method for forming a resist underlayer film includes the steps of: (i) a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) a step of forming a cured film by heat treatment of the coated substrate at a temperature from 100°C to 600°C inclusive for 10 to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma. A compound comprising at least one crosslinking group represented by specific general formulas such as general formulas (a-1) to (a-4) in the figure is used as the metal compound.SELECTED DRAWING: Figure 1

This invention belongs to the field of thermoelectric thin film technology, specifically relating to the preparation of a high-density domain-structured flexible silver telluride thin film and its reversible thermoelectric performance control method. The film possesses a high-density strip-like domain structure with numerous twins and stacking faults. The high-density domain boundaries provide a large number of ultra-highly active sites, allowing for wide-range reversible control of thermoelectric performance through simple post-processing methods, such as oxidation annealing, chemical and physical deposition of nano-metal particles. The high-density domain-structured silver telluride thin film prepared by this invention uses a silver film prepared by magnetron sputtering as a precursor, reacting it with tellurium vapor in a tube furnace to generate a dense thin film. The preparation method is simple, low-cost, highly reproducible, and operates at a low reaction temperature, making it suitable for large-scale preparation and compatible with flexible substrates such as polyimide. The high thermoelectric performance and reversible control characteristics of this film are of great significance for applications in high-performance flexible thermoelectric generators and multifunctional sensors.

The present technology relates to a chuck structure and a semiconductor test method using same. The chuck structure according to the present technology may comprise: a film on which a plurality of dies are disposed; and a chuck having the film disposed on one surface thereof and a plurality of grooves for adsorbing the film, the grooves being formed in the one surface.

Embodiments of this disclosure relate to a method for selectively depositing polysilicon after forming a fluid polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). A fluid polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and at least one side wall. The fluid polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiO₂) on the bottom. x ) forms a layer, and a silicon (Si) layer or a second silicon oxide (SiO) layer x The ) layer is the first silicon oxide (SiO x It is deposited on top of layers.

The application discloses a method for measuring interface thermal resistance and thermal conductivity of multilayer thin film material, comprising the following steps: arranging a first heating electrode, a second heating electrode and a detecting electrode on the top insulating layer of the multilayer thin film material; changing the frequency of the first alternating current heating current, recording the third harmonic voltage of the first heating electrode, and calculating the alternating current thermal response signal of the first heating electrode and the detecting electrode; changing the frequency of the second alternating current heating current, recording the third harmonic voltage of the second heating electrode, and calculating the alternating current thermal response signal of the second heating electrode and the detecting electrode; fitting the thermal conductivity of the substrate; and fitting the thermal conductivity and the interface thermal resistance of the multilayer thin film material. The substrate thermal conductivity slope method is used for fitting, the slope method is only sensitive to the thermal conductivity of the substrate, and the measurement error caused by the thin film layer is eliminated; the alternating current response signal in the frequency domain is used for the inversion calculation of the thermal conductivity and the interface thermal resistance of the thin film, the data amount is large, and the fitting precision can be improved.

The application discloses an interlayer-coupled reduced graphene oxide (rGO) film, a preparation method and application thereof. Although single-layer graphene sheets have excellent intrinsic thermal conductivity, stacked graphene films have serious thermal anisotropy and poor out-of-plane thermal transport performance due to weak van der Waals interaction between layers. The application discloses a strategy for scalable preparation of an interlayer-coupled rGO film, which is connected by covalent carbon bonds between stacked layers. A representative 200 μm-thick film prepared by the strategy has in-plane and out-of-plane thermal conductivities of 1465±63 W·m ‑1 ·K ‑1 and 14.0±1.2 W·m ‑1 ·K ‑1 , respectively. Under an extreme heat flux of 1200 W·cm ‑2 , the film can reduce temperature by 110℃ within 20 s and has excellent cycle stability. The film has high thermal and electrical conductivity, and can realize fast, uniform and durable electrothermal heating, and can be applied to the field of advanced thermal management.

A self-adhesive dry electrode patch and its electric field-induced forming manufacturing method are disclosed. The patch includes a lower electrode plate on which a conductive mixture film is prepared. The conductive mixture film has an array of mushroom-shaped adhesion features with end bulging characteristics, exhibiting good adhesion performance. Low-dimensional conductive materials inside the conductive mixture film are oriented perpendicular to the electrode direction and assembled into a conductive network. Therefore, excellent mechanical properties can be maintained while ensuring high conductivity, thus simultaneously possessing good sensing and adhesion performance. The manufacturing method involves first synthesizing the conductive mixture, then processing the electrode plate, followed by electric field-induced forming of the conductive mixture and orientation of the conductive materials, and finally curing and demolding the conductive mixture. This invention achieves a unified high sensing and adhesion performance with low conductive material doping.

A fluorinated resin composition, containing (A) and (B) below, wherein a contained amount of the (B) is 10 mass% or more: (A) a fluorinated resin containing a tetrafluoroethylene component and a component other than the tetrafluoroethylene component as a constituent, and having a largest calorific value in the fluorinated resin composition; and (B) a fluorinated resin having a calorific value smaller than the calorific value of the fluorinated resin of the (A).

A flexible circuit board includes a substrate, a plurality of circuit patterns disposed on the substrate, and a protective layer disposed on the circuit patterns, wherein each of the plurality of circuit patterns has a thickness greater than 8 µm and less than or equal to 25 µm, and wherein a thickness deviation between the plurality of circuit patterns is 0.5 µm to 3 µm. When the flexible circuit board is connected with a display panel, the display panel can have high performance and high current can flow through the display panel. The circuit pattern having the features according to the present invention is prevented from being damaged by high current.

The utility model relates to building material technical field, concretely relates to a kind of decorative gypsum board, including decorative layer, first gypsum board face paper, gypsum board core and second gypsum board face paper set gradually, and heating layer is arranged between decorative layer and first gypsum board face paper;Heating layer includes heating film and conducting strip, and conducting strip is electrically connected in heating film both sides and forms closed loop;Heating film and first gypsum board face paper between being provided with elastic buffer layer;A pair of opposite side of gypsum board core each is provided with at least two tensioning positioning structure, and the edge of heating film is tensioned fixed by tensioning positioning structure.The utility model can solve the problem that heating film and gypsum board thermal expansion difference lead to wrinkle separation and film loose curl under mechanical impact.

A net including a plurality of transverse bands, intersecting a plurality of longitudinal bands, the plurality of longitudinal bands each comprising two intermittently adhered films forming channels at discontinuities of adhesion between the films, and wherein at least one intersection of the longitudinal and transverse bands at least one transverse band is threaded through at least one of the channels of at least one longitudinal band.

A multilayer film suitable for manufacturing a stretch hood used to secure palletized goods during shipment and transport. The multilayer film comprises at least three layers and includes a first layer comprising a linear low density polyethylene resin having a melt index within the range of 0.20 and 0.60 dg / min and a density within the range of 0.910 to 0.914 g / cm3, a second layer comprising a linear low density polyethylene resin having a melt index within the range of 0.20 and 0.60 dg / min and a density within the range of 0.910 to 0.914 g / cm3, and at least one intermediate layer in between the first and second layers, the intermediate layer or layers including a linear low density polyethylene resin having a fractional melt index and a thermoplastic polyolefin having a melt index within the range of 0.30 and 0.70 dg / 10 min and a density within the range of 0.870 to 0.890 g / cm. The multilayer film having a total thickness between 4.85 and 6.7 mils and a density between 0.909 and 0.913 g / cm3. A stretch hood fabricated from such multilayer film exhibits exceptionally high holding force and, provides robust stability when utilized on palletized goods during transport. A method of manufacture of such multilayer film is also provided.

The application discloses a graphene acceleration sensor with a ladder beam structure and belongs to the technical field of acceleration sensors. The graphene acceleration sensor comprises a support frame, a cross-shaped mass block, a substrate, ladder-shaped cantilever beams, graphene pressure-sensitive resistors, protective films, metal electrodes and metal pads. The cross-shaped mass block is located in the middle of the support frame, and each inner side wall of the support frame is connected with the cross-shaped mass block through a ladder-shaped cantilever beam. The substrate is bonded to the bottom of the support frame. Each ladder-shaped cantilever beam is a variable cross-section beam, which decreases from the cross-shaped mass block to the support frame. Each graphene pressure-sensitive resistor is arranged on each ladder-shaped cantilever beam, and each protective film covers the upper surface of each graphene pressure-sensitive resistor. The graphene acceleration sensor has a wide-range measurement range of 50000g, the sensitivity is improved by 36.11%, and the graphene acceleration sensor has excellent wide-range and high-sensitivity characteristics and significantly reduces the influence on the cross-axis sensitivity.

This invention provides a novel waste disposal device and a compatible refill cassette. [Solution] Disclosed is a film dispensing cassette for a waste treatment device having a tubular film of a certain length, a receptacle having an inner cavity for packing the film, and an annular body having an inner annular wall defining a central opening and an outer annular wall spaced apart from the inner annular wall. The lid is configured to at least partially cover the inner cavity and to define a catch projecting into the central opening. The catch has an edge on its cantilever portion that lies in the cross-sectional plane of the cassette, the central axis of the central opening is perpendicular to the cross-sectional plane, and such a catch is inside the outer shape of a closing mechanism configured to seat on the cassette. The outer shape of the closing mechanism lies in this cross-sectional plane of the cassette and intersects with the outer shape portion of the connector of the closing mechanism.

This application belongs to the field of display technology and relates to an ink comprising quantum dots and a solvent, and further comprising one or more of additives and modifiers; wherein the additive is a blocked isocyanate, and the modifier is a heteropolyacid salt. This application also relates to a thin film and a light-emitting device. The technical solution provided by this application can improve the uniformity of film formation by doping the ink with additives.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

This application discloses an ionized flexible three-dimensional force sensor and its fabrication method, relating to the field of flexible sensor technology. The ionized flexible three-dimensional force sensor includes a flexible substrate, a flexible encapsulation film, a tangential force sensing electrode group, a normal force sensing electrode group, an ion conductor, and an ion material film. The tangential force sensing electrode group includes four side electrodes and a ring-shaped central electrode, with microstructures on the outer side of the ring-shaped central electrode. The normal force sensing electrode group includes interdigital electrodes. Based on an ionized sensing mechanism, this invention achieves ultra-thinness and high tangential sensitivity through innovative structural design, while simultaneously achieving complete decoupling of normal and tangential forces, eliminating signal crosstalk, and accurately measuring the magnitude and direction of three-dimensional forces without complex decoupling algorithms. It is suitable for applications with limited space, such as robotic fingertips and minimally invasive surgery.

The application belongs to the technical field of structural energy, and particularly relates to a structural integrated energy skin with hierarchical pore limited hybrid superstructure. The energy skin comprises: a two-dimensional covalent organic framework film as a continuous phase host framework, a photoelectric active guest component located in the pore structure of the host framework and penetrating through the thickness direction of the film, a molecular level interface passivation layer introduced by a gate vapor pulse and discontinuously distributed on the host-guest heterojunction interface, and a charge selective contact structure. The host framework has a first pore structure for interface limitation and a second pore structure for guest transmission. During preparation, the guest is generated in situ in a limited space by gas phase permeation, and its grain boundary fusion is induced by passivation and flash solidification in cooperation with the gate vapor pulse. The application constructs a trinity physical constraint architecture of host-guest-interface, effectively inhibits ion migration and non-radiative recombination, realizes high stability output in a complex environment, and is suitable for mobile carrier load bearing skin.

The application discloses a preparation method of a graphene / hexagonal boron nitride heterojunction. The target substrate is subjected to cleaning treatment, and then the surface of the cleaned target substrate is changed into hydrophilicity, so that the film can be well laid on the surface of the substrate, and the wrinkles are reduced. A layer of hexagonal boron nitride is arranged on the surface of the hydrophilic target substrate. A layer of PMMA is spin-coated on the surface of the graphene film to be transferred, and then the graphene film is floated in deionized water. Under the surface force of the deionized water, the graphene film can be stretched based on the PMMA. Then, the target substrate with the surface provided with the hexagonal boron nitride is used to be combined with the graphene film with the PMMA layer spin-coated on the surface in the deionized water, so that the target substrate and the graphene film are combined flatly. Then, drying and heating are carried out at a stepped temperature, the distance between the substrate and the sample is shortened, and the crack area is reduced. Finally, through annealing treatment, not only the PMMA residue is reduced, but also the film can be more closely contacted with the substrate.

A connector assembly may include an inner housing, a printed circuit board, an adhesive layer, a sensor film, and / or an outer housing. The inner housing may include a fluid flow path extending between a distal end and a proximal end of the inner housing. The printed circuit board may be on the inner housing. The printed circuit board may include a plurality of electrical contacts. The adhesive layer may be on the printed circuit board. The sensor film may be on the adhesive layer. The sensor film may be configured to generate a voltage in response to a force applied to the sensor film. The outer housing may surround the inner housing, the printed circuit board, the adhesive layer, and the sensor film.

A CdTe based thin film solar cell device (10) and a method for manufacturing it in superstrate configuration are provided. The CdTe based thin film solar cell device (10) comprises a CdTe based absorber layer (13) comprising a first partial layer (131) being a selenium-rich CdTe layer, a second partial layer (133) having a smaller selenium content than the first partial layer (131), and a diffusion barrier layer (132) between the first partial layer (131) and the second partial layer (133). The diffusion barrier layer (132) is a layer having a band gap larger than that of the first partial layer (131) and a crystal structure differing from the crystal structure of the first partial layer (131). The method for manufacturing comprises a step of forming the CdTe based absorber layer (131), wherein this step comprises depositing a first layer, a second layer and a third layer and performing a thermal treatment after depositing all of these layers. As a result of the thermal treatment, the first partial layer (131) is formed from the first layer, the diffusion barrier layer (132) is formed from the second layer and the second partial layer (133) is formed from the third layer.

An antireflection substrate includes a resin substrate, and an underlying layer, a hard coat layer, an antireflection layer, and a cover layer which are provided on the resin substrate in this order. The underlying layer is formed of a cured material of a hexafunctional or higher functional urethane (meth)acrylate compound (A1), the hard coat layer contains a cured material of a urethane (meth)acrylate compound (A) containing a trifunctional or less functional urethane (meth)acrylate compound (A2), the antireflection layer includes an intermediate refractive index layer having a refractive index of 1.50 to 1.75, a high refractive index layer having a refractive index of 1.60 to 2.00, and a low refractive index layer having a refractive index of 1.25 to 1.40 in this order from the hard coat layer side, the refractive index of the high refractive index layer being higher than that of the intermediate refractive index layer, and the intermediate refractive index layer, the high refractive index layer, and the low refractive index layer all containing a cured material of an organic / inorganic composite compound (B), and the cover layer includes a cured material of an organic / inorganic composite compound (B). The antireflection substrate having high antireflection performance and excellent elongation characteristics is suitable as a film for film insert molding.

According to one aspect of the present invention, the paper packaging material has an antibacterial function and, more specifically, may be composed of: a paper substrate layer; an antibacterial barrier layer formed on the outer side of the paper substrate layer; a water-soluble barrier layer provided on the inner side of the paper substrate layer; and a biodegradable film layer laminated on the water-soluble barrier layer.