32520 results about "Thin membrane" patented technology

The invention relates to the field of matt films, in particular to a BOPP matt film suitable for a direct coating process and a preparation method of the BOPP matt film. The BOPP matt film suitable for the direct coating process comprises an upper surface layer, a middle core layer and a lower surface layer which are sequentially arranged, the upper surface layer is an extinction layer and comprises polypropylene random copolymer, 40-51 wt% of high-density polyethylene, 2-3 wt% of n-alkyl chain modified hyperbranched polyester and 5-8 wt% of maleic anhydride-styrene melt grafted polypropylene random copolymer; the middle core layer comprises homo-polypropylene; and the lower surface layer comprises homo-polypropylene. According to the matt film, the roughness of the matt layer can be improved by optimizing the components of the matt layer, the problem of whitening'hard spots' on the surface of the matt film in a direct coating process is solved, and then the quality of a coated matt film product is improved, so that the appearance quality of products such as laminated paper, paper boxes and labels which are subsequently laminated is ensured.

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

To provide a vibrator, a vibration unit including the same, and a controller, the vibrator being configured to suppress cracks generated when a thin-film vibrating element is attached to an attachment surface including a curved surface, while maintaining desired vibration characteristics.SOLUTION: A vibrator 10 is attached to an enclosure including a curved surface and applies a voltage to apply predetermined vibration, the vibrator including a flexible substrate 12, a vibration application area A1, and thin-film vibrating elements 11a, 11b, 11c. The vibration application area A1 is provided on the flexible substrate 12, which is touched by a finger of a user. The thin-film vibrating elements 11a, 11b, 11c are arranged in the vibration application area A1 of the flexible substrate 12 and apply vibration when electric power is supplied.SELECTED DRAWING: Figure 2

The invention provides an anchoring structure, a film system and a liquefied gas storage tank. The anchoring structure comprises a stud, a nut and a secondary layer anchoring plate. The film system comprises a main layer film, a main plywood, a secondary layer film and a secondary plywood. The secondary layer anchoring plate is connected to the upper portion of the secondary plywood, the secondary layer thin film is connected to the upper portion of the secondary layer anchoring plate, the first pressing plate arranged on the stud is pressed on the upper portion of the secondary layer thin film, the main plywood is arranged on the upper portion of the secondary layer thin film, the second pressing plate arranged on the stud is pressed on the upper portion of the main plywood, and the main layer thin film is arranged on the upper portion of the main plywood. And the nut is pressed above the main layer film, so that the film system is connected and fixed through the anchoring structure, and the connection strength of each layer in the film system is ensured. The area of the first pressing plate is larger than that of the first through hole, the area of the second pressing plate is larger than that of the second through hole, and the contact area of the nut and the main layer film is larger than that of the third through hole, so that the leakproofness of the film system is improved, and liquefied gas in the storage tank is prevented from leaking.

An air-pulse generating device includes a film structure including a first flap and a second flap opposite to each other. The film structure is actuated to operate at an ultrasonic frequency, and the air-pulse generating device produces a plurality of air pulses at an ultrasonic pulse rate. The first flap and the second flap are actuated to perform a differential movement to form an opening or a virtual valve. A slit is formed between the first flap and the second flap, and the opening or the virtual valve is formed because of the slit. The slit is formed as a zigzagging pattern on the film structure.

The invention discloses an MEMS device architecture, which comprises a cap layer, a device layer and a substrate layer, the cap layer is bonded with the device layer, the bonded whole is bonded with the substrate layer, the cap layer is manufactured based on a first silicon substrate, the bottom of the cap layer is provided with a cavity structure, and the cap layer is internally provided with a high-deep groove structure. A silicon dioxide film is arranged on the groove wall of the high-deep groove structure, polycrystalline silicon is deposited and filled in the high-deep groove structure, and a silicon dioxide layer is arranged on the upper surface of the first silicon substrate; the device layer is manufactured based on an SOI wafer and comprises a first silicon structure layer composed of top layer silicon, a buried oxide layer and a second silicon structure layer composed of back substrate silicon. The substrate layer comprises a second silicon substrate, a bottom layer cavity is formed in the top face of the second silicon substrate, and exhaust holes are formed in the bottom face of the second silicon substrate. According to the method, deep groove etching, polycrystalline silicon groove filling and bonding technologies are combined, advanced materials such as the SOI wafer and the polyimide layer are utilized, and excellent signal isolation and flexibility of various MEMS IMU applications are achieved.

A multi-sheet bag includes an inner sheet having a film side defining an interior surface of the multi-sheet bag; an outer sheet coupled to the inner sheet on a side opposite the film side; at least one void disposed between the inner sheet and the outer sheet defined by an adhesive pattern deposited between the inner sheet and the outer sheet.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

The invention relates to a plastic film defect detection device in the field of detection equipment, which is provided with a fixed clamping assembly and a movable clamping assembly to tension intermittently conveyed plastic films section by section instead of a floating roller tensioning mode adopted by a traditional film detection device, so that film vibration and motion artifacts during continuous conveying and shooting of the films are reduced, and the detection efficiency is improved. The shot plastic film has better flatness, the quality of the shot image is improved, and the accuracy of defect detection is further improved; meanwhile, the two ends of the to-be-detected film are clamped and fixed through the fixed clamping assembly and the movable clamping assembly, the probability that a tearing opening is expanded to a non-detection part of the film after the film is tensioned and torn is reduced, and the output of plastic film waste during detection is reduced; in addition, through the cutting assembly and the secondary feeding mechanism, cutting of the unqualified part of the film and secondary feeding of the part to be detected are achieved.

Methods of forming a metal-containing layer on a semiconductor substrate are provided and may include performing multiple cycles of (a) co-flowing a metal-containing precursor and a reactant into a processing chamber housing the semiconductor substrate; and (b) after (a), flowing the reactant into a processing chamber housing the semiconductor substrate, wherein the reactant does not react with gas-phase metal-containing precursor. Methods of cleaning the processing chamber are also provided.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

A multi-ply bag includes an inner sheet assembly having a film side defining an interior surface of the multi-sheet bag, the inner sheet assembly having an another side opposite the film side; an outer sheet coupled to the opposite side; and at least one void disposed between the inner sheet and the outer sheet.

A repulpable container defines a cavity and a cavity opening at a top end of the repulpable container, both the cavity and the opening defined by a film layer, the film layer disposed on a first paper layer, the film layer configured to reduce heat transfer between the cavity and the first paper layer, the first paper layer arranged proximate to a second paper layer with at least one void therebetween.

The invention provides a flexible palladium film hydrogen sensor and a preparation method thereof, the flexible palladium film hydrogen sensor is sequentially provided with a flexible substrate, a hydrogen sensitive sensing layer and a contact connection layer from bottom to top, and the contact connection layer is connected with a resistance measurement unit; and the hydrogen-sensitive sensing layer is a palladium or palladium alloy film with a conical micro-nano structure. The palladium or palladium alloy thin film with the conical micro-nano structure provides a hydrogen sensor conical surface micro-nano structure with a high specific surface area for the flexible palladium thin film hydrogen sensor, and the process that hydrogen is adsorbed, dissolved and diffused into the palladium or palladium alloy thin film is accelerated, so that the response speed of the sensor is increased; according to the hydrogen sensor, the flexible substrate is adopted, so that the hydrogen sensor can be conveniently arranged in various narrow spaces, and the applicability of the hydrogen sensor in various scenes is improved.

The invention relates to an antistatic PET (Polyethylene Terephthalate) base film for preparing a polaroid release film and a preparation method thereof, the release film base film is prepared by taking an optical-grade PET slice as a main body, adding modified PET with a specific structure and a modified SiO2 filler, and carrying out co-extrusion casting, a unique three-section stretching process and coating with a coating liquid. According to the invention, material modification and process improvement are carried out, specifically, an optical-grade PET slice is taken as a main body material, modified PET and a modified SiO2 filler with a specific structure are added, a film is prepared through co-extrusion casting and a unique three-section stretching process, and then the surface of the film is coated with a layer of antistatic coating liquid, so that the antistatic film is obtained. The finally prepared base film has low alignment angle, low transverse hot shrinkage rate and high surface adhesion, keeps the characteristics of high light transmittance and low haze of an optical-grade polyester film, endows the film with certain antistatic property, and is particularly suitable for being used as a release film of a high-end polaroid.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

The invention is suitable for the field of film manufacturing, and provides a PO film tape casting process which comprises the following steps: S1, raw material pretreatment; s2, mixing the materials; s3, melt extrusion; s4, carrying out tape casting; s5, cooling and shaping; s6, thickness detection and adjustment; s7, carrying out post-treatment; and S8, rolling is conducted. According to the invention, the three-stage gradient cooling process significantly reduces the internal stress of the film, improves the dimensional stability, and reduces the warping shrinkage of subsequent processing; the thickness deviation of the thin film is controlled within + / -0.01 mm through an online thickness detection and automatic adjustment system, so that the product precision is improved; the surface tension of the film is stably improved by the corona post-treatment process, and the application scene is widened; through strict raw material pretreatment, the bubble defect of the film is effectively avoided, and the appearance quality of the product is improved; and a combined process of high-speed mixing and double-screw extrusion is adopted, so that uniform dispersion and full plasticization of the materials are ensured, and the problems of crystal points, stripes and the like are reduced.

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

The invention provides a piezoelectric device and a preparation method thereof. The piezoelectric device comprises a substrate material layer; the single crystal seed layer is arranged on the substrate material layer, and the single crystal seed layer is made of a six-membered ring structure carbon material; the electrode layer is arranged on the single crystal seed layer; and the single crystal piezoelectric film is arranged on the electrode layer. According to the preparation method of the piezoelectric device, the cost is lower, the material price is lower, the film deposition efficiency is higher, and the crystal structure of the single crystal piezoelectric film is more stable.

The invention relates to the field of low-temperature liquefied gas storage equipment, and discloses a low-temperature liquefied gas film storage tank and an installation method thereof.The low-temperature liquefied gas film storage tank comprises an outer tank and a plurality of insulation box structures installed on the outer tank; the insulation box structure comprises a secondary insulation box, a secondary shielding layer, a main plywood and a main shielding layer which are arranged in sequence, and the corrugation position of the main shielding layer corresponds to the corrugation position of a corrugated plate in the secondary shielding layer; a gap is formed between every two adjacent insulation box structures, a secondary layer connecting plate is connected between every two adjacent secondary shielding layers, a main layer connecting plate is connected between every two adjacent main shielding layers, and the secondary layer connecting plates and the main layer connecting plates are located above the gaps. The gap between the adjacent insulation box structures can be effectively processed, and the integrity and the sealing performance of the shielding layer are improved.

The invention discloses a method for remote epitaxial growth of a nitride film on a silicon substrate, the nitride film and a semiconductor device.The method comprises the following steps that surface nitriding treatment is conducted on the silicon substrate, so that a Si3N4 layer is formed on the surface of the silicon substrate; a single-layer graphene layer is formed on the surface of the side, provided with the Si3N4 layer, of the silicon substrate; performing remote epitaxial growth of a nitride film on the single-layer graphene layer; wherein the lattice information of the nitride film is the same as the lattice structure information of the Si3N4 layer. By adopting the technical scheme provided by the invention, remote epitaxial growth of the nitride film on the silicon substrate can be realized.

A display module includes a substrate including a mounting surface and a side surface; a Thin Film Transistor (TFT) layer provided on the mounting surface of the substrate; a plurality of inorganic light emitting diodes mounted on the mounting surface of the substrate; an anisotropic conductive layer provided on an upper surface of the TFT layer and electrically connecting the TFT layer to the plurality of inorganic light emitting diodes; a front cover covering the mounting surface; and a side cover surrounding the side surface. A side end of the front cover extends to a region outside the mounting surface, and the side cover is bonded to a lower surface of the front cover and to the side surface of the substrate which correspond to the region outside of the mounting surface.

The invention discloses a wafer composite film and a preparation method thereof, and belongs to the technical field of semiconductor preparation. The method comprises the following steps: (1) performing hydrogen ion or hydrogen-helium mixed ion implantation on a piezoelectric wafer to obtain an implanted wafer, wherein the implanted wafer sequentially comprises a thin film layer, an implanted layer and a residual layer; (2) sequentially forming a defect layer and an isolation layer on the supporting substrate; (3) bonding the isolation layer and the thin film layer of the injected wafer to obtain a bonding body; and (4) laser is adopted to heat the injection layer, then annealing heat treatment is carried out on the bonding body to achieve complete stripping, polishing and cleaning of the film, then the wafer composite film is obtained, the wavelength of the laser is 100-700 nm, the power of the laser is 50 mw to 100 w, and the scanning speed of the laser is 10-50 mm / s. According to the method, complete stripping of the composite film and combination of laser and thermal annealing processes can be effectively achieved, the method has high process stability, the yield of the composite film can be greatly improved, and the processing time cost of the composite film is shortened.

A blank includes an inner sheet having at least a base layer having a first side and a second side opposite the first side, the inner sheet including a film coupled to the first side of the base layer, and an outer sheet coupled to the second side of the base layer by an adhesive deposited between the outer sheet and the base layer such that a plurality of voids are formed between the outer sheet and the inner sheet, wherein the blank is configured to be folded into a multi-ply bag such that the film defines the inner cavity of the multi-ply bag.

The invention discloses an actuator structure and a liquid spraying device comprising the same, the actuator structure comprises a vibrating membrane, a piezoelectric material, a lower electrode and an upper electrode, the top surface and the bottom surface of the piezoelectric material are respectively connected to the upper electrode and the lower electrode, the vibrating membrane is connected to the bottom surface of the lower electrode, and the upper electrode is connected to the bottom surface of the piezoelectric material. The piezoelectric material is a single crystal piezoelectric film material. The liquid spraying device comprises the actuator structure. According to the actuator structure and the liquid spraying device comprising the actuator structure, the piezoelectric material is processed and manufactured by using the single crystal piezoelectric film material, so that the single crystal piezoelectric film material can be processed by using a wet etching technology, the problems in a dry etching process are effectively avoided, the preparation precision of the actuator structure is ensured, and the manufacturing cost of the actuator structure is reduced. The stability of the actuator structure is improved, and the manufacturing cost of the actuator structure is reduced.

The invention belongs to the technical field of evaporation-boiling heat dissipation in a limited space, and relates to a heat dissipation device of a capillary core coupling manifold microchannel, and the heat dissipation device realizes vapor-liquid efficient separation and thermodynamic equilibrium regulation and control through the synergistic effect of thin film evaporation of a capillary core structure and boiling heat exchange of the manifold microchannel. The capillary core structure utilizes high porosity and strong capillary force to realize rapid liquid supplementing and uniform spreading of a working medium, so that local dryness is avoided; the radial manifold structure reduces the flow resistance and improves the temperature uniformity through the topological optimization of the flow channel; the directional exhaust design of the steam channel fundamentally inhibits steam bubble backflow. In a multi-heat-source scene, the device can dynamically adjust the branch flow through a thermal resistance-flow resistance coupling model, and the system stability is remarkably improved. The invention has the advantages of high heat flow bearing capacity, low energy consumption and strong environmental adaptability, and provides an innovative solution for reliable heat management of high-power electronic devices.

The air-pulse generating device comprises a film structure, operating at an ultrasonic operating frequency, and a resonant chamber, formed on a side of the film structure. A resonance is formed within the resonance chamber. Due to the resonant chamber, the APG device has a peak on a frequency response of an acoustic property of the APG device at the ultrasonic operating frequency.

The invention discloses a poly-Si film preparation method based on a vertical double-layer hot wire array thermal field design, which changes the surface temperature of a hot wire and the range of a cracking high-temperature region by adjusting the interlayer spacing of a double-layer hot wire array and the current of the double-layer hot wire, expands the cracking time and the cracking space of silane, promotes secondary cracking of the silane, and improves the yield of the poly-Si film. Components and concentration distribution of a silane cracking intermediate product reaching the surface of the substrate can be effectively controlled, and the ratio of SiH / SiH2 active groups is increased; and depositing the poly-Si thin film under the vacuum of 0.5 Pa-5. 0Pa, the substrate temperature of 200-560 DEG C and the deposition time of 10-60 minutes, after deposition is finished, raising the substrate temperature to 200-650 DEG C, and carrying out vacuum annealing on the grown poly-Si thin film to obtain the high-crystallization-rate poly-Si thin film. According to the method, the poly-Si thin film is grown by using a vertical double-layer hot wire array thermal field design, a high-temperature hot wire silane cracking technology and a vacuum annealing technology, and the crystallization quality of the poly-Si thin film can be obviously improved.

The invention discloses a laser film structure and a preparation method thereof. Wherein the thin film structure comprises a first dielectric layer, a metal layer, a second dielectric layer and a base material layer, and the second dielectric layer is formed by alternately depositing a dielectric material with a low refractive index and a dielectric material with a high refractive index; the structural expression of the second dielectric layer is H (LH) s, H represents a high-refractive-index dielectric material with the optical thickness of lambda / 4, L represents a low-refractive-index dielectric material with the optical thickness of lambda / 4, and s represents the number of cycles of the film system. According to the invention, the camouflage capability is improved, and the excellent laser protection performance is ensured.