18044 results about "Thin membrane" patented technology

The invention relates to an antistatic PET (Polyethylene Terephthalate) base film for preparing a polaroid release film and a preparation method thereof, the release film base film is prepared by taking an optical-grade PET slice as a main body, adding modified PET with a specific structure and a modified SiO2 filler, and carrying out co-extrusion casting, a unique three-section stretching process and coating with a coating liquid. According to the invention, material modification and process improvement are carried out, specifically, an optical-grade PET slice is taken as a main body material, modified PET and a modified SiO2 filler with a specific structure are added, a film is prepared through co-extrusion casting and a unique three-section stretching process, and then the surface of the film is coated with a layer of antistatic coating liquid, so that the antistatic film is obtained. The finally prepared base film has low alignment angle, low transverse hot shrinkage rate and high surface adhesion, keeps the characteristics of high light transmittance and low haze of an optical-grade polyester film, endows the film with certain antistatic property, and is particularly suitable for being used as a release film of a high-end polaroid.

The invention relates to the field of low-temperature liquefied gas storage equipment, and discloses a low-temperature liquefied gas film storage tank and an installation method thereof.The low-temperature liquefied gas film storage tank comprises an outer tank and a plurality of insulation box structures installed on the outer tank; the insulation box structure comprises a secondary insulation box, a secondary shielding layer, a main plywood and a main shielding layer which are arranged in sequence, and the corrugation position of the main shielding layer corresponds to the corrugation position of a corrugated plate in the secondary shielding layer; a gap is formed between every two adjacent insulation box structures, a secondary layer connecting plate is connected between every two adjacent secondary shielding layers, a main layer connecting plate is connected between every two adjacent main shielding layers, and the secondary layer connecting plates and the main layer connecting plates are located above the gaps. The gap between the adjacent insulation box structures can be effectively processed, and the integrity and the sealing performance of the shielding layer are improved.

The invention discloses a multi-probe on-line real-time film thickness measuring method and a multi-probe on-line real-time film thickness measuring device. In combination with the multi-wavelength analysis capability and multi-channel parallel signal characteristics of the spectrum detection unit, different plane positions are adopted to correspond to different wavelengths or central wavelengths, the transmissivity of each wavelength is obtained, and the thickness of the corresponding position is obtained respectively; the precision and the accuracy of obtaining the thickness by a single wavelength are improved through a multi-mode cooperative signal analysis algorithm, so that the thicknesses of a plurality of different positions of the same thin film are accurately obtained at the same time through one spectrum detection unit, or the thicknesses of a plurality of different thin films are obtained; according to the invention, the problems of large absorption, transparent or non-transparent substrate compatibility, quick response, multi-branch and on-line real-time measurement of the film are successfully solved; the device and the method can be integrated in film growth equipment to carry out rapid and high-precision measurement on the film, so that closed-loop control on film production is realized, the iteration speed is increased, the yield of high-quality film production is greatly increased, and the film production cost is saved.

The invention relates to an antistatic MLCC release film base film and a preparation method thereof. The antistatic MLCC release film base film is prepared by melt blending and biaxial stretching of PET master batch, an antistatic composition and a nano filler, wherein the antistatic composition is prepared by compounding modified PET-PEG and thiophene modified aromatic polyamide; the nano filler is prepared by carrying out melt extrusion on KH550 modified talcum powder and MAH-g-PET (maleic anhydride-grafted polyethylene terephthalate). The antistatic composition disclosed by the invention has the beneficial effects that the antistatic composition is formed by interweaving two polymers, and a stable three-dimensional conductive network is constructed in the PET film, so that the antistatic performance is more efficient, lasting and stable. In addition, through chemically bonded modified talcum powder, the smoothness and low roughness are provided, and meanwhile reinforcing and toughening are achieved; and the single-layer extrusion process can realize ultrathin thin film, the production process is simplified, and the production cost is greatly reduced.

This case relates to a self-healing optical film and its preparation method. The optical film is made by adding a nanoparticle suspension to PET masterbatch as the main material during its melt extrusion process, resulting in a cast sheet. After biaxial stretching, a self-healing coating liquid is coated online, followed by shaping and cooling. The nanoparticle suspension includes nano-titanium oxide, MAH-PET polymer, ATO nanoparticles, and titanate coupling agent. The self-healing coating liquid is produced by core-shell emulsion polymerization, forming a nano-silica hard core and an acrylate functional monomer polymer soft shell. This invention adds the nanoparticle suspension by in-situ feeding in the middle of the extruder, reducing steps, improving dispersion uniformity, and making the film surface smoother. Then, the self-healing coating liquid is applied online after longitudinal stretching and before transverse stretching, forming a film on the film surface, improving the hardness and scratch resistance of the film material, enabling rapid self-healing at room temperature, strong stability, and avoiding the occurrence of rainbow patterns.

The invention belongs to the technical field of preparation of diaphragm materials, and particularly relates to a preparation method of a polymer porous membrane, the polymer porous membrane and application. The method comprises the following steps: (1) obtaining a film containing a polymer and a plasticizer; (2) extracting the plasticizer in the thin film by adopting an extracting solution to obtain a wet film; and (3) the wet film is dried, and in the drying process, the size shrinkage rate of the wet film in the TD direction ranges from 5% to 20%. The polymer porous membrane prepared by the method has high-temperature dimensional stability and good air permeability and thickness uniformity.

The invention discloses a thin film tank pump tower base device, and belongs to the technical field of LNG storage and transportation, the thin film tank pump tower base device comprises a base main body, the base main body is cylindrical, the periphery of the base main body is provided with a first connecting part, and the first connecting part is connected with a first shielding layer; wherein the first connecting part is annular, the first shielding layer is formed by splicing two corrugated plates, the two corrugated plates are integrally formed, a circular through hole is formed in the connected end face of the two corrugated plates, and the two corrugated plates are directly connected with the first connecting part. According to the pump tower base, the corrugated plate is integrally formed, the base body is directly connected with the specially-made corrugated plate, the problem that a conventional pump tower base needs to be in transition connection through a connecting plate is solved, the problem that the connecting plate and the corrugated plate are not smoothly connected is solved, the installation procedure of the pump tower base can be simplified, and the preparation efficiency of a thin film tank is improved.

The invention provides an anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density as well as a preparation method and application thereof. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density comprises a substrate layer, a bottom electrode layer and a plurality of stacked relaxation ferroelectric layers, wherein the bottom electrode layer and the multiple stacked relaxation ferroelectric layers are sequentially arranged on the substrate layer; each relaxor ferroelectric layer sequentially comprises a first functional layer, a second functional layer and a third functional layer from bottom to top; the first functional layer comprises LaFeO3, the second functional layer comprises BiFeO3, and the third functional layer comprises SrTiO3. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice thin film with the high energy storage density has small electric leakage performance and high polarization value, and more excellent energy storage performance is achieved.

The invention belongs to the technical field of semiconductor material processing equipment, and particularly relates to a bonding system, which comprises a film forming chamber used for preparing a film with active point locations on the surface of an original substrate to form an active substrate; the bonding chamber comprises a first carrier and a second carrier, and the first carrier and the second carrier are respectively used for keeping the active substrates and enabling the two kept active substrates to be opposite to each other; at least one of the first carrier and the second carrier is provided with a force output part, and the force output part is used for outputting force for crimping the active substrate held by the first carrier and the second carrier; and the transmission chamber comprises a substrate taking and placing module which is used for taking and placing the substrates on different stations. According to the bonding system provided by the invention, a very thin active film layer can be prepared on the to-be-bonded surface of the substrate to form the active substrate, bonding can be directly carried out at room temperature, the stress problem caused by mismatching of thermal expansion coefficients of heterogeneous materials can be solved, and the product quality of a bonding sheet is improved.

The invention discloses a silk protein-MXene composite film and a preparation method thereof. The silk protein-MXene composite film sequentially comprises a conductive surface layer, a porous response layer and a supporting bottom layer from top to bottom, the invention relates to the technical field of composite films. According to the fibroin-MXene composite film and the preparation method thereof, a three-layer gradient structure is formed by the conductive surface layer, the porous response layer and the supporting bottom layer, good conductivity and electromagnetic shielding effectiveness are ensured by utilizing oriented arrangement of MXene of the conductive surface layer, gallic acid and MXene form a hydrogen bond network, and nitrogen-doped carbon quantum dots coat the surface of MXene to form a physical barrier, so that the electromagnetic shielding effect is improved, and the electromagnetic shielding effect is improved. Through double oxidation resistance of gallic acid and nitrogen-doped carbon quantum dots, a sponge body structure formed by the porous response layer is matched to endow the composite film with high-sensitivity response to external stimulation, the supporting bottom layer is crosslinked by hexamethylene diisocyanate and enhanced by nanocellulose, the tensile strength is improved, and the tensile strength of the composite film is improved. And the contradiction between the mechanical property and the conductivity of the traditional composite film is effectively solved.

The invention discloses a reinforced composite PCB and a preparation method thereof, and belongs to the technical field of PCB preparation. The preparation method of the reinforced composite PCB comprises the following steps: step 1, processing an inner-layer core board to obtain a preprocessed inner-layer core board; 2, cutting, drilling and activating the modified composite film to obtain a treated modified composite film; and 3, sequentially carrying out stacking, hot pressing treatment, pressure relief, cooling, drilling, hole metallization treatment, outer layer pattern transfer, pattern electroplating, outer layer etching, resistance welding, surface treatment, molding and testing on a copper foil, a prepreg, the pretreated inner layer core plate, the prepreg, the treated modified composite film, the prepreg, the pretreated inner layer core plate, the prepreg and the copper foil. And the composite PCB is obtained. The circuit board prepared by the method has excellent thermal stability and mechanical properties.

The present application provides an entropy-regulated composite dielectric film, which comprises a polymer matrix; and fillers dispersed in the polymer matrix, wherein the fillers comprise Bi 4‑a M 1a Ti (3‑3b) M 2b O 12 , wherein M1 comprises at least one of lanthanum, neodymium, samarium and praseodymium, M2 comprises at least one of zirconium, hafnium and tin, 0 The entropy-regulated composite dielectric film has high temperature resistance, high breakdown strength, high polarization strength, high energy storage density and good stability.

The utility model provides a preparation device of a doped diamond film. The preparation device comprises a first main body, a second main body, a heating assembly, a carrying assembly, a vacuum assembly and a laser emission assembly. The first main body is provided with a first cavity, the first cavity is provided with a base station used for bearing a base material, and the first cavity is used for being connected with reaction gas. The heating assembly is arranged in the first cavity, the second main body is provided with a second cavity, and the first cavity and the second cavity can be switched between a communicating state and an isolated state through the switch valve. The carrying assembly is arranged in the second cavity and used for conveying the doping target material from the second cavity to the first cavity or from the first cavity to the second cavity when the first cavity communicates with the second cavity. The vacuum assembly is used for vacuumizing the first cavity and / or the second cavity. The laser emitting assembly is used for emitting laser towards the doping target material located in the first cavity. According to the technical scheme, preparation of the doped diamond film doped with multiple elements is achieved.

The invention discloses a high-reliability PbS quantum dot film, a preparation method thereof and a photoelectric device. The preparation method comprises the following steps: 1) obtaining a first quantum dot solution; 2) adding medium-chain and long-chain amine; 3) adding an anti-solvent; 4) obtaining medium-chain and long-chain amine modified PbS quantum dot solids; 5) obtaining a second quantum dot solution; (6) forming a PbS quantum dot coating; 7) forming a mercaptan solution; 8) coating the PbS quantum dot coating with a mercaptan solution; (9) annealing treatment; 10) forming a new PbS quantum dot coating, and coating the new PbS quantum dot coating with a mercaptan solution; according to the PbS quantum dot thin film and the preparation method thereof, through the induction and synergistic effect of halogen atoms, the binding capacity of halogenated mercaptan ligands and the surface of the PbS quantum dot thin film is enhanced, the surface defect state of the PbS quantum dots is effectively inhibited, and the reliability of the PbS quantum dot thin film and a photoelectric device under the conditions of high temperature, high humidity and long-time illumination is remarkably improved.

The utility model discloses a vacuum cooling temporary storage mechanism and thin film deposition equipment, and relates to the technical field of semiconductor equipment. The vacuum cooling temporary storage mechanism comprises a temporary storage bin, a sealing gate valve, a storage box, a vacuumizing assembly and a cooling module. The vacuumizing assembly is connected with the temporary storage bin, the storage box is arranged in the temporary storage bin, the temporary storage bin is provided with a conveying opening, the sealing gate valve is used for closing or opening the conveying opening, the cooling module is connected with the temporary storage bin, and the cooling module is used for cooling the temporary storage bin. Compared with the prior art, the vacuum cooling temporary storage mechanism provided by the utility model adopts the vacuumizing assembly connected with the temporary storage bin and the sealing gate valve mounted in the temporary storage bin, so that the cleanliness of the temporary storage bin can be ensured, the temporary storage bin is prevented from being influenced by the transmission bin, gas in the temporary storage bin can be directly pumped out, and the service life of the temporary storage bin is prolonged. And heat emitted by the wafer is rapidly taken away, and the cooling efficiency is high.

The invention relates to the technical field of high polymer material processing, in particular to a blow molding method of a composite toughened film, which comprises the following steps: step 1, preheating matrix resin in preheating equipment; 2, feeding the mixed raw materials into a double-screw extruder for melt blending; 3, feeding the dried composite particles into a hopper of a single-screw blow molding extruder; 4, adjusting the air volume and the air pressure of the cooling system according to the monitoring result; and 5, the formed film pipe is folded into a flat shape through a guide component and led out through a traction roller, the traction speed and the extrusion speed are coordinated to control the traction ratio, corona treatment is conducted on the surface of the thin film to improve the surface energy, then rolling tension is controlled for rolling, and the rolling tension is controlled according to the elasticity and thickness of the thin film to prevent excessive stretching or loosening. The uniform distribution and proper compatibility of the composite toughening component improve the toughness of the film, and maintain the strength and barrier property of the film.

The invention discloses a synchronous temperature control method for co-extrusion molding of a multilayer polymer film, and relates to the technical field of high polymer material processing, and the method comprises the following steps: setting a target temperature interval of each polymer layer of the multilayer polymer film, and according to the melting characteristics, heat sensitivity and interface bonding requirements of each layer of material, setting a target temperature interval of each polymer layer of the multilayer polymer film; respectively determining an extrusion temperature set value and an allowable fluctuation range; through layered independent temperature control and preheating matching, thermal behavior synchronization of multiple polymer melts is achieved, and the interface bonding stability is improved; through a die head heat insulation and buffer structure, interlayer heat interference is effectively shielded, and the integrity of a functional layer is guaranteed; through the intelligent closed-loop temperature control system, the state of each temperature control area is predicted and adjusted in real time, and self-adaptive optimization of thermal control is achieved. And the co-extrusion quality, the consistency and the production intelligent level of the multi-layer film are integrally improved.

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

This disclosure relates to the fabrication of high-performance thin film composite (TFC) reverse osmosis (RO) membranes comprising a thin polyamide rejection layer (thickness of 100-200 nanometer), a porous substrate including polysulfone (PSf) layer (thickness of 40-50 micron) cast on polyester nonwoven fabric (thickness of ˜100 micron). Hydrophilic and antibacterial TFC polyamide RO membranes were developed by incorporating green Lignin and nanostructured silver-based metal organic frameworks (MOFs) into the selective layer. The polyamide layer of TFC RO membranes was fabricated on the porous PSf substrate by interfacial polymerization between aqueous monomer solutions containing MPD, and adequate additives in water and organic monomer solutions containing TMC in the mixture of hexane and co-solvents. The optimized produced RO membranes were provided water flux of 95-100 LMH and sodium chloride (NaCl) salt rejection of 98.5-99.0% during filtration of 2000 ppm NaCl solution at 225 psi pressure, and water flux of 55-60 LMH and sodium chloride (NaCl) salt rejection of 98.6-98.9% during filtration of 35000 ppm NaCl solution at 800 psi pressure. This disclosure also relates to developing a roll-to-roll PSf membrane as a substrate for making TFC RO membranes for water desalination

The invention relates to the technical field of plastic product processing, and discloses a high-toughness plastic bag processing technology which comprises the following steps: firstly, primarily sorting recycled main raw materials, recording sources, grade classification and processing states, configuring a centralized feeding system and an intelligent proportioning program, and carrying out intelligent proportioning on the main raw materials; the mixed raw materials are injected into a five-layer co-extrusion die head or an annular die head structure, then an extrusion film body is controlled through a control system to conduct film blowing treatment on an extruded film to form film bubbles, then film blowing is conducted, the film bubbles are cooled through a 360-degree cooling air ring and an internal air core, the film obtained after film blowing is completed is pulled to a winding section through a winding system, and then the film is obtained. Before rolling, mechanical performance indexes are detected through an online monitoring instrument, and a finished film roll enters a bag making / slicing section according to order requirements. Through fine treatment and multi-layer co-extrusion process design of recycled plastics, high-proportion recycled materials are effectively applied to production of plastic bags, and the effect of remarkably improving the utilization rate of the recycled materials is achieved on the premise that the performance of finished products is not reduced.

The invention provides a lead zirconate titanate composite film with a high electro-optical coefficient, a preparation method of the lead zirconate titanate composite film and an electro-optical modulator, the lead zirconate titanate composite film comprises an insulating substrate, a buffer layer and a ferroelectric main body layer which are sequentially stacked, and the buffer layer is a lanthanum-doped lead zirconate titanate film; the ferroelectric main body layer is a lead zirconate titanate thin film and has (001) / (100) orientation. The composite film has a relatively high electro-optical coefficient, relatively low driving voltage and relatively high thermal stability.

The utility model provides an isolation structure and a chemical vapor deposition device, the isolation structure is arranged in a reaction cavity of the vapor deposition device, a heating device is arranged in the reaction cavity, the reaction cavity comprises a first annular cover, a second annular cover and a third annular cover, the first annular cover comprises a first space used for accommodating the heating device, and the second annular cover comprises a second space used for accommodating the heating device; the second annular cover is arranged on the first annular cover in a sleeving manner; the ring width of the second annular cover is larger than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover. The isolation structure blocks a flowing path of reaction gas in the reaction cavity, and corrosion of the reaction gas to the radio frequency induction coil and the bottom wall of the reaction cavity is reduced; and meanwhile, the radiation heat dissipation of the wafer tray on the radio frequency induction coil is isolated, so that the temperature influence of thermal radiation on the radio frequency induction coil is weakened, and the uniformity of thin film deposition is improved.

The invention provides a manufacturing method of a glass substrate with a conductive through hole and a chip packaging structure, and the method comprises the steps: providing a glass substrate which comprises a first surface and a second surface which are opposite to each other; forming a first through hole through which the first surface of the glass substrate penetrates to the second surface; forming a conductive column in the first through hole, wherein a gap is formed between the conductive column and the first through hole; and forming a buffer layer between the conductive column and the inner wall of the first through hole, wherein the buffer layer at least covers the inner wall of the first through hole and the side wall of the conductive column. According to the invention, through the method of firstly manufacturing the conductive column and then forming the buffer layer, the step of directly depositing a high-quality insulating film in the first through hole with relatively high difficulty and cost is avoided, the demand on deposition equipment is reduced, the material and time cost is saved, and the production yield is improved. Meanwhile, the buffer layer is actively filled between the conductive column and the glass substrate, so that the thermal mechanical stress is more effectively absorbed and released, and the product quality of the glass substrate with the conductive through hole is improved.

The invention provides a carbazole-containing heterocyclic compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials. The carbazole-containing heterocyclic compound provided by the invention has relatively high polarizability, is beneficial to improving the refractive index, and can reduce the total reflection phenomenon during light emission of the device and effectively improve the light extraction efficiency of the device when being applied to a covering layer of the organic electroluminescent device; and meanwhile, the compound has relatively high glass transition temperature and good film-forming property, and can isolate moisture and oxygen, so that the luminous efficiency and the service life of the organic electroluminescent device are further improved and prolonged. The preparation method of the compound is simple, raw materials are easy to obtain, and the compound can be widely applied to the fields of organic thin film transistors, panel display and the like and has good application effects and industrialization prospects.

The invention relates to an FBAR-based MIM on-chip capacitor, a high-integration chip structure of the FBAR-based MIM on-chip capacitor in a hybrid FBAR circuit, and electronic equipment. The chip structure comprises a film bulk acoustic resonator and a capacitor which are arranged on the same substrate; the film bulk acoustic resonator comprises an acoustic wave reflection structure, and a lower electrode, a piezoelectric layer and an upper electrode which are laminated on the acoustic wave reflection structure. The capacitor comprises an upper electrode, a lower electrode and a central dielectric layer, wherein the upper electrode and the lower electrode are stacked on at least three metal layers formed on a substrate; the dielectric constant of the central dielectric layer is greater than 6; the thickness of each metal layer in the upper electrode and the lower electrode of the capacitor is not less than the skin depth, and the outermost upper electrode sub-layer and the outermost lower electrode sub-layer are the sub-layers with the largest thickness in the metal layers; the middle layer upper electrode sub-layer and the resonator upper electrode are made of the same material, the middle layer lower electrode sub-layer and the resonator lower electrode are made of the same material, the innermost layer upper electrode sub-layer and the innermost layer lower electrode sub-layer are not diffused with the material of the central dielectric layer, and the area of the capacitor is not larger than five times of the area of the film body acoustic resonator.

The invention discloses an oxide thin film post-processing method based on multi-stage cooling annealing, and aims to actively regulate and control thin film stress while repairing oxygen vacancies through a precisely designed heat treatment process. According to the method, the problem that stress control and defect repair are difficult to consider in the annealing process is solved, and a solid theoretical basis and scientific basis are laid for preparing low-absorption and high-stability oxide intense laser thin film devices.

The invention discloses a preparation method of an environment-friendly degradable single-sided perspective sticker, and belongs to the technical field of modified nano materials. The method comprises the following steps: (1) preparation of a multi-layer composite structure: mixing polylactic acid and poly (butylene succinate), adding nano-montmorillonite and a surface modifier, and carrying out melt blending to form a first-layer melt; stirring poly (butylene adipate-co-terephthalate) and fluorescent carbon nanodots to form a second layer of melt; the first layer, the pressure-sensitive adhesive layer and the second layer are co-extruded and compounded to form a film blank. And (2) construction of the nano-film: biaxially stretching the film blank, imprinting a micropore array, dipping in the silver nanoparticle suspension, and drying to obtain the nano-film. And (3) coating functionalization treatment: immersing into a fluorine-containing nano coating solution, and curing. And (4) post-treatment: carrying out secondary curing. The obtained single-sided perspective sticker is suitable for the fields of buildings, vehicle privacy films and the like, and solves the problems of serious pollution and slow degradation of a traditional sticker.

The invention discloses a hot melting forming device and method for a synthetic quartz glass cylinder, through modular structural design, the synergistic effect of positioning, exhausting, pressing and forming is achieved, and the hot melting forming device for the synthetic quartz glass cylinder specifically comprises a graphite pressure head connecting rod, a graphite pressure head, a graphite center rod and a forming mold. According to the hot-melting forming method for the synthetic quartz glass cylinder, the device is adopted, a synthetic quartz glass ingot is pretreated, a low-impurity demolding material is laid during assembling, gradient heating is conducted on three temperature areas of a heating furnace, pressurization is conducted after softening, and then differential cooling is conducted, so that efficient preparation of the high-purity synthetic quartz glass cylinder is achieved; and the purity of the finished product meets the strict requirements of high-precision processes such as semiconductor wafer processing and thin film deposition on the material purity. According to the invention, the large-diameter and ultra-long synthetic quartz glass cylinder can be stably produced, the requirement of large-size development of semiconductor equipment is met, and the blank in the field of large-size high-purity quartz glass cylinder preparation in the prior art is filled.