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188results about How to "Improve material properties" patented technology

Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof

The invention discloses a heat-type wind-speed and wind-direction sensor with a heat insulation structure, comprising a silicon chip and a ceramic substrate, wherein the silicon chip is positioned above the ceramic substrate; four heating elements and four heat-sensing temperature-measuring elements are symmetrically distributed on the four edges of the upper surface of the silicon chip; a heat insulating groove is arranged between each heating element and each heat-sensing temperature-measuring element; heat insulating cavities are arranged below the heat-sensing temperature-measuring elements at the back of the silicon chip; and a ceramic gold-plating layer and a silicon gold-plating layer are arranged between the silicon chip and the ceramic substrate and are connected by adopting a gold-gold bonding process so as to be used for the heat connection between the silicon chip and the ceramic substrate. In the whole preparation process of the sensor, a standard CMOS (complementary metal-oxide-semiconductor) process is used, the after-treatment process is simple, and the prepared heat-insulating groove and the heat insulating cavities can be used for increasing the sensitivity of the chip effectively, reducing the heat conduction loss of the chip and the heat capacity of the sensor, and reducing the response time of the sensor.
Owner:SOUTHEAST UNIV

Surface tack thermistor element

The invention discloses a surface tack thermistor element, which comprises a resistor element, a first electrode, a second electrode and at least a thermally conductive insulating layer. The resistor element comprises a first conductive member, a second conductive member and high-molecular material layers, wherein the high-molecular material layers are laminated between the first conductive member and the second conductive member and have characteristics of positive temperature coefficient or negative temperature coefficient. The high-molecular material layers and the first and second conductive members extend together along a first direction to form a laminated structure. The first electrode is electrically connected with the first conductive member. The second electrode is electrically connected with the second conductive member and is electrically isolated from the first electrode. Heat conductivity of the first and second electrodes is at least 50W/mK. The thermally conductive insulating layer contains a high-molecular insulated substrate and a thermally conductive filling material and is arranged between the first electrode and the second electrode. Heat conductivity of the thermally conductive insulating layer is within 1.2W/mK-13W/mK.
Owner:POLYTRONICS TECH

Ga2O3-material-based U-shaped grating type MOSFET and preparation method thereof

InactiveCN106449419AOvercome the disadvantage of high on-resistanceLower on-resistanceSemiconductor/solid-state device manufacturingSemiconductor devicesMOSFETGrating
The invention relates to a Ga2O3-material-based U-shaped grating type MOSFET and a preparation method thereof. The method comprises steps: selecting a beta-Ga2O3 substrate; growing a homogeneous epitaxial layer on the surface of the beta-Ga2O3 substrate and carrying out ion implantation on the surface of the homogeneous epitaxial layer to form an N type doped region; carrying out treatment on the surface of the N type doped region by using an ion implantation process to form a P type well region; carrying out treatment on the surface of the P type well region by using an etching process to form a U-shaped groove in the beta-Ga2O3 substrate; preparing a gate dielectric layer and a gate electrode in the U-shaped groove; and preparing a source electrode on the upper surface, different from the P type well region, of the beta-Ga2O3 substrate and manufacturing a drain electrode on the lower surface of the beta-Ga2O3 substrate, thereby forming a U-shaped grating type MOSFET. According to the Ga2O3-material-based U-shaped grating type MOSFET provided by the invention, with the U-shaped grate electrode structure, a high on-resistance defect of the MOSFET power device is overcome; and the Ga2O3 material is applied to the substrate and the homogeneous epitaxial layer of the U-shaped grating structure, so that the voltage-withstanding capability and the reverse breakdown voltage of the MOSFET power device are improved; and the on resistance is reduced and the performance and device reliability of the power device are improved substantially.
Owner:XIDIAN UNIV
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