The invention discloses a
cushion block composite layer for a
semiconductor, a preparation method and a
cushion block, the
cushion block composite layer sequentially comprises a
composite coating and a surface
microstructure from a substrate close to
beryllium copper to a position far away from the substrate, and the
composite coating sequentially comprises a
chromium transition layer, an alpha-
diamond-like
carbon layer and a self-lubricating layer doped with
tungsten disulfide from a position close to the substrate to a position far away from the substrate.
Hard metal carbide reinforced phase
crystal grains are uniformly distributed in the alpha-
diamond-like
carbon layer; the surface micro-texture comprises a plurality of pits, and each pit is filled with a nano-particle
solid lubricant; through the structure, the cushion block is compatible with the high process temperature, an additional cooling device is not needed, and the interface
shear stress of the composite layer is reduced, so that the
copper powder falling amount is greatly reduced, the
hardness, the wear-resisting life, the wear-resisting particle penetrability and the high recognition accuracy of the cushion block are greatly improved, and the
low friction coefficient of the surface is maintained; and the roughness is still kept at a lower level after the
lead frame is carried for multiple times.